VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF www.vishay.com Vishay Semiconductors HEXFRED®, Ultrafast Soft Recovery Diode, 15 A VS-HFA15 TB60SPbF FEATURES VS-HFA15 TB60-1PbF • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Halogen-free according to IEC61249-2-21 definition Base cathode 2 • Compliant to RoHS Directive 2002/95/EC 2 • Designed and qualified for industrial level • AEC-Q101 qualified BENEFITS 1 N/C 3 Anode D2PAK • • • • • 3 Anode 1 N/C TO-262 DESCRIPTION PRODUCT SUMMARY Package Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count TO-263AB (D2PAK), TO-262AA IF(AV) 15 A VR 600 V VF at IF 1.7 V trr (typ.) 23 ns TJ max. 150 °C Diode variation Single die VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 15 A continuous current, the VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current SYMBOL TEST CONDITIONS VR IF TC = 100 °C VALUES UNITS 600 V 15 Single pulse forward current IFSM 150 Maximum repetitive forward current IFRM 60 Maximum power dissipation Operating junction and storage temperature range Revision: 10-Jun-11 PD TJ, TStg TC = 25 °C 74 TC = 100 °C 29 - 55 to + 150 A W °C Document Number: 94054 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Cathode to anode breakdown voltage VBR Maximum forward voltage VFM TEST CONDITIONS IR = 100 μA IF = 15 A MIN. TYP. MAX. 600 - - UNITS - 1.3 1.7 - 1.5 2.0 IF = 15 A, TJ = 125 °C - 1.2 1.6 VR = VR rated - 1.0 10 - 400 1000 - 25 50 pF - 8.0 - nH UNITS IF = 30 A See fig. 1 Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 V μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL MIN. TYP. MAX. trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TEST CONDITIONS - 23 - trr1 TJ = 25 °C - 50 60 trr2 TJ = 125 °C - 105 120 - 4.5 6.0 - 6.5 10 - 84 180 - 241 600 IRRM1 TJ = 25 °C IRRM2 TJ = 125 °C IF = 15 A dIF/dt = 200 A/μs VR = 200 V ns A Qrr1 TJ = 25 °C Qrr2 TJ = 125 °C dI(rec)M/dt1 TJ = 25 °C - 188 - dI(rec)M/dt2 TJ = 125 °C - 160 - MIN. TYP. MAX. UNITS - - 300 °C - - 1.7 - - 80 - 0.5 - - 2.0 - g - 0.07 - oz. nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Thermal resistance, case to heatsink RthCS TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s Typical socket mount Mounting surface, flat, smooth and greased Weight Marking device Revision: 10-Jun-11 Case style D2PAK HFA15TB60S Case style TO-262 HFA15TB60-1 K/W Document Number: 94054 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF Vishay Semiconductors 100 10 000 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 TJ = 150 °C 1000 TJ = 125 °C 100 10 1 TJ = 25 °C 0.1 0.01 1 1.0 1.2 1.4 1.6 1.8 2.2 2.0 0 2.4 VFM - Forward Voltage Drop (V) 94054_01 100 400 300 500 600 VR - Reverse Voltage (V) 94054_02 Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 200 Fig. 2 - Typical Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 10 94054_03 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 10 1 PDM Single pulse (thermal response) 0.01 0.00001 94054_04 Revision: 10-Jun-11 0.0001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94054 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF www.vishay.com Vishay Semiconductors 100 800 IF = 30 A IF = 15 A IF = 5 A 80 600 Qrr (nC) 60 trr (ns) VR = 200 V TJ = 125 °C TJ = 25 °C 700 40 500 IF = 30 A IF = 15 A IF = 5 A 400 300 200 20 VR = 200 V TJ = 125 °C TJ = 25 °C 100 0 100 0 100 1000 dIF/dt (A/μs) 94054_05 Fig. 7 - Typical Stored Charge vs. dIF/dt 25 10 10 000 VR = 200 V TJ = 125 °C TJ = 25 °C dI(rec)M/dt (A/μs) Irr (A) 15 dIF/dt (A/μs) 94054_07 Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt 20 1000 IF = 30 A IF = 15 A IF = 5 A IF = 30 A IF = 15 A IF = 5 A 1000 5 0 100 1000 dIF/dt (A/μs) 94054_06 Fig. 6 - Typical Recovery Current vs. dIF/dt Revision: 10-Jun-11 100 100 94054_08 VR = 200 V TJ = 125 °C TJ = 25 °C 1000 dIF/dt (A/μs) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt Document Number: 94054 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 10-Jun-11 Document Number: 94054 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 15 TB 60 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (15 = 15 A) 5 - Package: TB = TO-220 6 - Voltage rating (60 = 600 V) S = D2PAK 7 8 - -1 = TO-262 - None = Tube (50 pieces) TRL PbF 8 9 TRL = Tape and reel (left oriented, for D2PAK package ) TRR = Tape and reel (right oriented, for D2PAK package) 9 - PbF = Lead (Pb)-free P = Lead (Pb)-free (for D2PAK TRL and TRR) LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-263AB (D2PAK): www.vishay.com/doc?95046 TO-262AA : TO-263AB (D2PAK): TO-262AA : www.vishay.com/doc?95419 www.vishay.com/doc?95054 www.vishay.com/doc?95420 Packaging information www.vishay.com/doc?95032 SPICE model www.vishay.com/doc?95357 Revision: 10-Jun-11 Document Number: 94054 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0° to 8° MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-262 DIMENSIONS in millimeters and inches Modified JEDEC outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.190 NOTES A 4.06 4.83 0.160 A1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e L 2.54 BSC 4 4 2 0.100 BSC 13.46 14.10 L1 - L2 3.56 0.530 0.555 1.65 - 0.065 3.71 0.140 0.146 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 Document Number: 95419 Revision: 04-Oct-10 4 (4) (5) (6) 3 Dimension b1 and c1 apply to base metal only Controlling dimension: inches Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1