VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that generates off of a single position DC power supply. The GaAsCap wafer scale sub-miniature leadless package is small and ultra thin, yet can be handled and placed with standard 0402 pick and place assembly. x Sub-miniature 0402 (1mm x 0.5mm) Surface Mount Leadless Package x Low height (0.25mm) x Frequency Range 0.5 to 18 GHz x Enhancement Mode [1] x 0.25 micron gate width x Tape and Reel packaging option available x Point MTTF > 300 years at 120oC channel temperature The use of 0.25 micron gates allow a ultra low noise figure (below 1dB from 500 MHz to 12 GHz) with respectable associated gain. With a flat transconductance over bias and frequency the VMMK-1218 provides excellent linearity of over 30 dBm and power over 15 dBm at one dB compression. This product is easy to use since it requires only positive DC voltages for bias and low matching coefficients for simple impedance matching to 50 Ω systems. The VMMK-1218 is intended for any 500MHz to 18GHz application including 802.11abgn WLAN, WiMax, BWA 802.16 & 802.20 and military applications. WLP 0402, 1mm x 0.5mm x 0.25 mm YY tB Gate tBYY Pin Connections (Top View) Notes: Top view package marking provides orientation gate source Notes: “b” = Device Code “YY” = Year Code drain Drain Specifications x 0.7 dB Fmin x 9.0 dB Ga x +22 dBm output 3rd order intercept x +12 dBm output power Applications x Low Noise and Driver for Cellular/PCS and WCDMA Base Stations x 2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook computer, access point and mobile wireless applications x DBS 10 to 13 GHz receivers x VSAT and SATCOM 13 to 18 GHz systems x 802.16 & 802.20 BWA systems x WLL and MMDS Transceivers x General purpose discrete E-pHEMT for other ultra low noise applications Notes: 1. The Avago enhancement mode pHEMT devices do not require a negative gate bias voltage as they are “normally off”. They can help simplify the design and reduce the cost of receivers and transmitters in many applications from 500 MHz to 18 GHz Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 20 V (class A) ESD Human Body Model = 100 V (Class 0) Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. VMMK-1218 Absolute Maximum Ratings Sym Parameters/Condition Unit Max Vds Drain-Source Voltage[2] V 5 Vgs Gate-Source Voltage[2] V -5 to 1 Vgd Gate-Drain Voltage[2] V -5 to 1 Ids Drain Current[2] mA 100 Igs Gate Current mA 1.6 Pdn Total Power Dissipation[3] mW 300 Pin RF CW Input Power Max dBm 10 Tch Max channel temperature C +150 θjc Thermal Resistance[4] C/W 200 Notes: 1. Operation in excess of any of these conditions may results in permanent damage to this device. 2. Assumes DC quiescent conditions 3. Ambient operational temperature TA=25°C unless noted. 4. Thermal resistance measured using 150°C Liquid Crystal Measurement Method 5. The device can handle + 10dBm RF input power provided lgs is limited to 1ma 70 0.7 V 60 lDS (mA) 50 0.6 V 40 30 0.5 V 20 10 0.4 V 0.3 V 0 0 1 2 3 4 5 6 7 VDS (V) Figure 1. Typical I-V Curves. (VGS=0.1 V per step) VMMK-1218 RF Specifications (on board) [6,7] TA = 25°C, Freq = 10 GHz, Vds = 3V, Ids = 20mA, Zo = 50 Ω (unless otherwise specified) Sym Parameters/Condition Units Min Typ. Max Vgs Gate Voltage V 0.48 0.58 0.68 Igs Gate Current uA 0.4 Gm Transconductance mS 200 Ga Associated Gain dB NF Noise Figure Fmin 9 10.2 dB 0.81 1.5 Noise Figure min dB 0.71 P-1dB 1dB Compressed Output Power dBm +12 OIP3 Output 3rd Order Intercept Point dBm +22 Notes: 6. Specifications are derived from measurements in a test circuit. 7. All tested parameters guaranteed with measurement accuracy ± 0.5dB for gain. 2 6.7 Product Consistency Distribution Charts [1] Figure 2. Gate Voltage @ Vds = 3V & Ids = 20mA, LSL=0.48, Nominal=0.58, USL=0.68, CPK=2.2 Figure 3. Gain @ 10 GHz, LSL=6.7, Nominal=9.0, USL=10.2, CPK=1.1 Figure 4. NF @ 10 GHz, Nominal=0.81, USL=1.50, CPK=1.8 Note: 1. Distribution data based at least 500 part sample size from two wafers during initial characterization of this product. Future wafers allocated to this product may have nominal values anywhere between upper and lower limits. VMMK-1218 Typical Performance Curve 35 25.00 30 20.00 OIP3 (dBm) S21 (dB) 25 15.00 10.00 20 15 1.5V 2V 3V 4V 10 5.00 5 0 0.00 0 5 10 FREQUENCY (GHz) 15 10 15 20 25 Figure 6. OIP3 vs. Ids at 10 GHz (Zi = Zo = 50Ω) 1.6 16 1.2 12 P1dB (dBm) Fmin (dB) 5 Ids (mA) Figure 5. S21 vs. Frequency at 2V, 20mA 0.8 0.4 8 1.5V 2V 3V 4V 4 0 0 0 5 10 FREQUENCY (GHz) Figure 7. Fmin vs. Frequency at 2V, 20mA 3 0 20 15 20 0 5 10 Ids (mA) Figure 8. P1dB vs. Ids at 10 GHz (Zi = Zo = 50Ω) 15 20 25 VMMK-1218 Typical Performance Curve 30 16 25 OIP3 (dBm) S21 (dB) 12 8 1.5V 2V 3V 4V 4 5 10 15 20 25 Ids (mA) -40C 25C 85C 5 10 15 Figure 10. OIP3 vs. Ids at 2V over temperature at 10 GHz 30 25 20 15 10 -40C 25C 85C 5 0 5 0 Id (mA) Figure 9. Gain vs. Ids at 10 GHz OIP3 (dBm) 10 0 0 10 15 Id (mA) Figure 11. OIP3 vs. Ids at 3V over temperature at 10 GHz 4 15 5 0 0 20 20 25 20 25 VMMK-1218 Typical Scattering Parameters and Noise Parameters, TA=25°C, Vds=2V, Ids=20mA [1] Freq S11 S21 S12 S22 MSG/MAG GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB 2 0.89 -78.16 20.92 11.12 129.71 0.06 44.50 0.54 -55.65 29.35 3 0.85 -106.33 19.31 9.23 112.05 0.07 29.40 0.47 -76.55 25.87 4 0.81 -128.95 17.70 7.68 97.65 0.08 17.41 0.41 -94.12 23.11 5 0.79 -146.66 16.25 6.49 85.78 0.08 7.80 0.37 -108.21 21.15 6 0.78 -161.38 14.93 5.58 75.40 0.09 -0.22 0.34 -120.69 19.57 7 0.78 -173.77 13.74 4.86 66.04 0.09 -7.10 0.32 -131.78 18.21 8 0.77 175.63 12.65 4.29 57.40 0.09 -13.35 0.31 -141.77 17.06 9 0.77 166.49 11.64 3.82 49.36 0.09 -18.82 0.31 -151.17 16.03 10 0.78 158.16 10.71 3.43 41.75 0.08 -24.10 0.30 -159.09 15.12 11 0.78 150.76 9.87 3.12 34.59 0.08 -28.99 0.31 -166.30 14.31 12 0.78 143.93 9.09 2.85 27.60 0.08 -33.20 0.31 -173.04 13.61 13 0.78 137.52 8.38 2.62 20.89 0.08 -37.50 0.32 -179.45 12.97 14 0.79 131.39 7.71 2.43 14.43 0.08 -41.46 0.32 174.80 12.39 15 0.79 125.61 7.11 2.27 8.03 0.08 -45.30 0.33 169.68 11.86 16 0.79 119.69 6.53 2.12 1.59 0.07 -49.20 0.34 164.86 11.37 17 0.80 113.87 6.01 2.00 -4.80 0.07 -52.04 0.35 160.03 10.95 18 0.80 108.30 5.50 1.88 -10.80 0.07 -55.52 0.36 155.48 10.54 Typical Noise Parameters Fmin Г opt Г opt Rn/50 GHz dB Mag. Ang. 2 0.17 0.727 30.9 0.1 20.9 3 0.24 0.624 46.2 0.1 19.16 4 0.31 0.534 61.1 0.09 17.57 5 0.38 0.457 75.8 0.08 16.12 6 0.44 0.394 90.1 0.08 14.83 7 0.51 0.344 104.1 0.07 13.69 8 0.58 0.307 117.8 0.07 12.69 9 0.65 0.283 131.2 0.06 11.84 10 0.72 0.273 144.3 0.06 11.14 11 0.78 0.276 157.1 0.06 10.59 12 0.85 0.292 169.6 0.06 10.19 13 0.92 0.322 -178.2 0.06 9.94 14 0.99 0.365 -166.3 0.06 9.83 15 1.05 0.421 -154.8 0.06 9.87 16 1.12 0.49 -143.5 0.07 10.07 17 1.19 0.573 -132.6 0.08 10.41 dB Note: 1. S-parameters are measured in 50 Ohm test environment. 5 Ga MSG/MAG S21 30.00 MSG/MAG and S21 (dB) Freq 20.00 10.00 0.00 0 5 10 FREQUENCY GHz Figure 12. MSG/MAG and S21 vs. Frequency at 2V 20 mA 15 20 VMMK-1218 Typical Scattering Parameters and Noise Parameters, TA=25°C, Vds=1.5V, Ids=20mA [1] Freq S11 S21 S12 S22 MSG/MAG GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB 2 0.89 -78.70 20.79 10.95 129.60 0.07 44.02 0.52 -63.66 28.91 3 0.84 -106.97 19.15 9.07 111.99 0.08 28.78 0.46 -87.65 25.57 4 0.80 -129.59 17.52 7.52 97.71 0.09 16.70 0.42 -107.45 22.87 5 0.79 -147.25 16.06 6.35 86.00 0.09 7.26 0.39 -123.04 20.94 6 0.78 -161.95 14.74 5.46 75.76 0.10 -1.08 0.37 -136.55 19.39 7 0.77 -174.30 13.53 4.75 66.54 0.10 -7.98 0.36 -148.06 18.04 8 0.77 175.11 12.45 4.19 58.04 0.10 -14.20 0.35 -158.27 16.90 9 0.77 165.97 11.42 3.72 50.15 0.09 -19.91 0.35 -167.52 15.86 10 0.77 157.70 10.49 3.35 42.68 0.09 -25.19 0.35 -175.45 14.95 11 0.77 150.33 9.65 3.04 35.68 0.09 -30.03 0.35 177.45 14.14 12 0.77 143.54 8.87 2.78 28.84 0.09 -34.60 0.36 171.04 13.44 13 0.78 137.15 8.15 2.56 22.27 0.09 -38.83 0.36 164.96 12.80 14 0.78 131.00 7.49 2.37 15.98 0.09 -43.10 0.37 159.55 12.22 15 0.78 125.21 6.88 2.21 9.72 0.08 -47.12 0.37 154.60 11.66 16 0.79 119.39 6.31 2.07 3.42 0.08 -51.06 0.38 150.08 11.18 17 0.79 113.54 5.80 1.95 -2.83 0.08 -54.94 0.39 145.54 10.75 18 0.79 107.95 5.29 1.84 -8.68 0.08 -58.30 0.40 141.40 10.32 Typical Noise Parameters Freq Fmin Г opt Г opt Rn/50 GHz dB Mag. Ang. 2 0.16 0.717 32.4 0.10 21.86 3 0.24 0.620 48.1 0.10 19.89 4 0.31 0.536 63.5 0.09 18.08 5 0.39 0.464 78.4 0.08 16.45 6 0.47 0.405 93.0 0.08 14.99 7 0.55 0.359 107.1 0.07 13.70 8 0.63 0.326 120.7 0.06 12.59 9 0.70 0.305 134.0 0.06 11.64 10 0.78 0.297 146.9 0.06 10.87 11 0.86 0.302 159.3 0.06 10.27 12 0.94 0.319 171.3 0.05 9.84 13 1.02 0.349 -177.1 0.05 9.59 14 1.09 0.392 -165.9 0.05 9.51 15 1.17 0.447 -155.1 0.05 9.59 16 1.25 0.515 -144.8 0.06 9.85 17 1.33 0.596 -134.8 0.08 10.29 MSG/MAG S21 MSG/MAG and S21 (dB) dB Note: 1. S-parameters are measured in 50 Ohm test environment. 6 40.00 Ga 30.00 20.00 10.00 0.00 0 5 10 FREQUENCY GHz 15 Figure 13. MSG/MAG and S21 vs. Frequency at 1.5V 20 mA 20 VMMK-1218 Typical Scattering Parameters and Noise Parameters, TA=25°C, Vds=3V, Ids=20mA [1] Freq S11 S21 S12 S22 MSG/MAG GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB 2 0.90 -78.41 20.88 11.07 129.30 0.05 44.78 0.59 -45.41 29.71 3 0.85 -106.62 19.27 9.19 111.50 0.06 29.68 0.50 -61.56 26.11 4 0.82 -129.23 17.67 7.65 96.89 0.07 17.84 0.43 -74.78 23.29 5 0.80 -146.90 16.21 6.47 84.82 0.07 8.51 0.38 -85.37 21.29 6 0.79 -161.57 14.90 5.56 74.28 0.07 0.60 0.35 -94.96 19.70 7 0.78 -173.94 13.71 4.85 64.67 0.07 -6.02 0.32 -103.77 18.32 8 0.78 175.49 12.63 4.28 55.85 0.07 -12.05 0.31 -112.18 17.17 9 0.78 166.35 11.62 3.81 47.60 0.07 -17.59 0.30 -120.67 16.14 10 0.78 158.10 10.70 3.43 39.76 0.07 -22.09 0.29 -128.21 15.23 11 0.79 150.68 9.87 3.11 32.39 0.07 -26.72 0.29 -135.58 14.44 12 0.79 143.93 9.09 2.85 25.16 0.07 -30.99 0.30 -142.88 13.76 13 0.79 137.47 8.38 2.62 18.21 0.07 -34.81 0.31 -149.97 13.11 14 0.80 131.33 7.71 2.43 11.48 0.06 -38.24 0.31 -156.46 12.54 15 0.80 125.54 7.11 2.27 4.87 0.06 -40.97 0.33 -162.44 12.02 16 0.80 119.64 6.53 2.12 -1.87 0.06 -44.55 0.34 -168.20 11.55 17 0.81 113.80 6.00 2.00 -8.47 0.06 -46.49 0.35 -174.07 11.14 18 0.81 108.24 5.48 1.88 -14.69 0.06 -49.45 0.36 -179.63 10.72 Typical Noise Parameters Freq Fmin Г opt Г opt Rn/50 GHz dB Mag. Ang. 2 0.16 0.72 30.40 0.10 20.29 3 0.23 0.62 45.50 0.10 18.62 4 0.30 0.53 60.30 0.09 17.08 5 0.37 0.45 74.80 0.08 15.69 6 0.44 0.39 89.10 0.08 14.44 7 0.50 0.34 103.00 0.07 13.34 8 0.57 0.30 116.70 0.07 12.37 9 0.64 0.28 130.10 0.07 11.55 10 0.71 0.27 143.20 0.06 10.87 11 0.77 0.27 156.00 0.06 10.34 12 0.84 0.29 168.60 0.06 9.95 13 0.91 0.31 -179.20 0.06 9.70 14 0.98 0.36 -167.20 0.06 9.59 15 1.05 0.41 -155.50 0.06 9.63 16 1.11 0.48 -144.10 0.07 9.81 17 1.18 0.56 -132.90 0.08 10.13 MSG/MAG S21 MSG/MAG and S21 (dB) dB Note: 1. S-parameters are measured in 50 Ohm test environment. 7 40.00 Ga 30.00 20.00 10.00 0.00 0 5 10 FREQUENCY GHz Figure 14. MSG/MAG and S21 vs. Frequency at 3V 20 mA 15 20 Small Signal Model Parameters Parameter Value Parameter Value Parameter Value Parameter Value Vd (V) 1.5 Vd (V) 1.5 Vd (V) 1.5 Vd (V) 1.5 Id (mA) 5 Id (mA) 10 Id (mA) 15 Id (mA) 20 Gm 0.1162 Gm 0.2019 Gm 0.2374 Gm 0.3249 tau 0.00188 tau 0.002388 tau 0.002702 tau 0.00271 Cgs 0.5131 Cgs 0.6732 Cgs 0.8077 Cgs 0.929 Rgs 0.2126 Rgs 0.02638 Rgs 0.02069 Rgs 0.0304 Cgd 0.06932 Cgd 0.06226 Cgd 0.0777 Cgd 0.07133 Cds 0.1587 Cds 0.1574 Cds 0.1606 Cds 0.1597 Rds 334.70 Rds 187.10 Rds 154.10 Rds 123.80 Parameter Value Parameter Value Parameter Value Parameter Value Vd (V) 2 Vd (V) 2 Vd (V) 2 Vd (V) 2 Id (mA) 5 Id (mA) 10 Id (mA) 15 Id (mA) 20 Gm 0.1159 Gm 0.1992 Gm 0.1992 Gm 0.3199 tau 0.002146 tau 0.002394 tau 0.002394 tau 0.00257 Cgs 0.5661 Cgs 0.7445 Cgs 0.7445 Cgs 1.04381 Rgs 0.2293 Rgs 0.01936 Rgs 0.01936 Rgs 0.01756 Cgd 0.07976 Cgd 0.0726 Cgd 0.0726 Cgd 0.0606 Cds 0.1631 Cds 0.16078 Cds 0.16078 Cds 0.1607 Rds 357.50 Rds 222.00 Rds 222.00 Rds 141.70 Parameter Value Parameter Value Parameter Value Parameter Value Vd (V) 3 Vd (V) 3 Vd (V) 3 Vd (V) 3 Id (mA) 5 Id (mA) 10 Id (mA) 15 Id (mA) 20 Gm 0.1112 Gm 0.193 Gm 0.258 Gm 0.3119 tau 0.00249 tau 0.0025 tau 0.00252 tau 0.002487 Cgs 0.6365 Cgs 0.8786 Cgs 1.08192 Cgs 1.26 Rgs 0.007447 Rgs 0.1353 Rgs 0.01 Rgs 0.0271 Cgd 0.06521 Cgd 0.0582 Cgd 0.053 Cgd 0.04772 Cds 0.1603 Cds 0.1595 Cds 0.1601 Cds 0.1595 Rds 438.90 Rds 260.60 Rds 209.10 Rds 172.90 Parameter Value Parameter Value Parameter Value Parameter Value Vd (V) 4 Vd (V) 4 Vd (V) 4 Vd (V) 4 Id (mA) 5 Id (mA) 10 Id (mA) 15 Id (mA) 20 Gm 0.1088 Gm 0.1909 Gm 0.2509 Gm 0.3053 tau 0.00264 tau 0.002635 tau 0.002613 tau 0.00261 Cgs 0.6765 Cgs 0.9774 Cgs 1.203 Cgs 1.412 Rgs 0.00818 Rgs 0.1478 Rgs 0.01263 Rgs 0.02727 Cgd 0.05762 Cgd 0.05065 Cgd 0.04603 Cgd 0.04153 Cds 0.1565 Cds 0.1573 Cds 0.1574 Cds 0.1579 Rds 564.30 Rds 312.10 Rds 242.20 Rds 200.30 8 S Parameter Measurements The S-parameters are measured on a .016 inch thick RO4003 printed circuit test board, using G-S-G (ground signal ground) probes. Coplanar waveguide is used to provide a smooth transition from the probes to the device under test. The presence of the ground plane on top of the test board results in excellent grounding at the device under test. A combination of SOLT (Short - Open - Load - Thru) and TRL (Thru - Reflect - Line) calibration techniques are used to correct for the effects of the test board, resulting in accurate device S-parameters. The reference plane for the S Parameters is at the edge of the package. VMMK-1218 ADS Model CAP ID=C6 C=Cpgd pF CAP ID=C4 C=Cgd pF PORT P=1 Z=50 Ohm IND ID=L1 L=Lg nH RES ID=R2 R=Rd Ohm RES ID=R3 R=Rg Ohm CAP ID=C1 C=Cgs pF RES ID=R1 R=Rgs Ohm CAP ID=C3 C=Cpgs pF RES ID=R4 R=Rs Ohm IND ID=L3 L=Ls nH 9 Rg Value Rg 4.729 Rd 1.29495 RsG 2.283 C pgs 0.0475 C pds 0.0318 C pgd 0.00417 Ls 0.000559 Lg 0.32446 Ld 0.2602 PORT P=3 Z=50 Ohm 1 3 2 4 VCCS ID=U1 M=Gm S A=0 Deg R1=1e100 Ohm R2=Rds Ohm F=0 GHz T=tau ns IND ID=L2 L=Ld nH PORT P=2 Z=50 Ohm CAP ID=C2 C=Cds pF CAP ID=C5 C=Cpds pF Outline Drawing Recommended SMT Attachment Top and Side View The VMMK Packaged Devices are compatible with high volume surface mount PCB assembly processes. Manual Assembly for Prototypes 1. Follow ESD precautions while handling packages. 0.5 mm BYY 2. Handling should be along the edges with tweezers or from topside if using a vacuum collet. 1.00 mm 0.25 mm 3. Recommended attachment is solder paste. Please see Figure 8 for recommended solder reflow profile. Conductive epoxy is not recommended. Hand soldering is not recommended. 4. Apply solder paste using either a stencil printer or dot placement. The volume of solder paste will be dependent on PCB and component layout and should be controlled to ensure consistent mechanical and electrical performance. Excessive solder will degrade RF performance. Bottom View 0.8 mm 0.7 mm 0.3 mm 0.2 mm 5. Follow solder paste and vendor’s recommendations when developing a solder reflow profile. A standard profile will have a steady ramp up from room temperature to the pre-heat temp to avoid damage due to thermal shock. 0.5 mm 6. Packages have been qualified to withstand a peak temperature of 260ºC for 20 to 40 sec. Verify that the profile will not expose device beyond these limits. Notes: 1. x indicates pin 1 2. Dimensions are in millimeters 3. Pad Material is minimum 5.0 um thick Au 7. Clean off flux per vendor’s recommendations. 8. Clean the module with Acetone. Rinse with alcohol. Allow the module to dry before testing. Suggested PCB Material and Land Pattern 300 1.2 (0.048) TEMPERATURE - °C 0.400 (0.016) 0.100 (0.004) 0.100 (0.004) 0.500 (0.020) Peak = 250 ± 5 °C Melting point = 218 °C 250 0.500 (0.020) 200 150 100 50 Part of Input Circuit 0.076 max (0.003) 2pl see discussion 0.381 (0.015) 2pl Notes: 1. 0.010” Rogers RO4350 10 0.200 (0.008) 0.200 (0.008) Part of Output Circuit 0.254 dia PTH (0.010) 4pl Solder Mask 0.400 dia (0.016) 4pl 0.7 (0.028) Ramp 1 Preheat Ramp 2 Reflow 0 0 50 100 150 SECONDS 200 Cooling 250 300 Figure 15. Suggested Lead-Free Reflow Profile for SnAgCu Solder Paste Part Number Ordering Information Part Number No. of Devices Container VMMK-1218-BLKG 100 antistatic bag VMMK-1218-TR1G 5000 7” Reel Package Dimension Outline D E Symbol Min (mm) Max (mm) D 1.004 1.085 E 0.500 0.585 A 0.225 0.275 A Notes: All dimensions are in mm Device Orientation USER FEED DIRECTION REEL 4 mm Notes: “B” = Device Code “YY” = Month Code x BYY TOP VIEW CARRIER TAPE x BYY 11 x BYY x BYY USER FEED DIRECTION 8 mm END VIEW Tape Dimensions Bo B 5º <Max> Bo F W Note: 1 Po E Do Note: 2 Note: 2 P2 A A P1 D1 B Scale 5:1 B-B Section Ao RO.1 5º <Max> Ko Ao = 0.73± 0.05 mm Scale 5:1 A-A Section Bc = 1.26± 0.05 mm + 0.05 Ko = 0.35 + 0 mm Notes: 1. 10 sprocket hole pitch cumulative tolerance is ±0.1 mm 2. Pocket position relative to sprocket hole measured as true position of pocket not pocket hole 3. Ao & Bo measured on a place 0.3mm above the bottom of the pocket to top surface of the carrier 4. Ko measured from a plane on the inside bottom of the pocket to the top surface of the carrier 5. Carrier camber shall be not than 1mm per 100mm through a length of 250mm Symbol K1 - Po 4.0 ± 0.10 P1 4.0 ± 0.10 P2 2.0 ± 0.05 Do 1.55 ± 0.05 D1 0.5± 0.05 E 1.75 ± 0.10 F 3.50 ± 0.05 10Po 40.0 ± 0.10 W 8.0 ± 0.20 T 0.20 ± 0.02 Unit: mm For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. AV02-1081EN - February 2, 2012 Parameter and Test Condition