Advance Technical Information IXYK100N65B3D1 IXYX100N65B3D1 XPTTM 650V IGBT GenX3TM w/ Diode VCES = IC110 = VCE(sat) tfi(typ) = Extreme Light Punch Through IGBT for 10-30kHz Switching 650V 100A 1.85V 73ns TO-264 (IXYK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Maximum Ratings 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 IF110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms 225 160 100 67 460 A A A A A IA EAS TC = 25°C TC = 25°C 50 600 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load ICM = 200 @VCE VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 10, Non Repetitive 8 μs PC TC = 25°C 830 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES 650 IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V 6.0 IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 70A, VGE = 15V, Note 1 TJ = 150°C © 2014 IXYS CORPORATION, All Rights Reserved V 50 μA 3 mA TJ = 150°C 1.53 1.77 Tab PLUS247 (IXYX) G G C E G = Gate C = Collector Tab E = Emitter Tab = Collector Features International Standard Packages Optimized for 10-30kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability Anti-Parallel Ultra Fast Diode High Current Handling Capability Advantages High Power Density Low Gate Drive Requirement Applications V 3.5 G C E ±100 nA 1.85 V V Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100633(10/14) IXYK100N65B3D1 IXYX100N65B3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 60A, VCE = 10V, Note 1 30 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff 55 S 4740 470 103 pF pF pF 168 30 78 nC nC nC 29 37 1.27 150 73 1.37 ns ns mJ ns ns mJ IC = 100A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 400V, RG = 3 Note 2 Inductive load, TJ = 150°C IC = 50A, VGE = 15V VCE = 400V, RG = 3 Note 2 RthJC RthCS TO-264 Outline 2.00 28 37 2.35 198 160 2.16 ns ns mJ ns ns mJ 0.15 0.18 °C/W °C/W Terminals: 1 = Gate 2,4 = Collector 3 = Emitter PLUS247TM Outline Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 100A, VGE = 0V, Note 1 IRM IF = 100A, VGE = 0V, TJ = 150C, -diF/dt = 700A/sVR = 400V trr TJ = 150C 1.7 1.4 2.7 V V 45 A 156 ns Terminals: 1 - Gate 2 - Collector 3 - Emitter 0.36 C/W RthJC Dim. Notes: 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYK100N65B3D1 IXYX100N65B3D1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 140 VGE = 15V 13V 12V 11V 120 VGE = 15V 13V 300 10V 12V 250 11V 200 80 I C (A) I C (A) 100 9V 60 40 8V 20 7V 0 10V 150 100 9V 50 8V 7V 0 0 0.5 1 1.5 2 2.5 3 0 2 4 6 140 1.8 VGE = 15V 13V 12V 11V 14 16 18 150 175 VGE = 15V 10V I C = 140A VCE(sat) - Normalized 9V I C (A) 12 1.6 100 80 8V 60 40 7V 20 1.4 1.2 I C = 70A 1.0 0.8 I C = 35A 6V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 VCE - Volts 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 5.0 4.5 Fig. 6. Input Admittance 160 TJ = 25ºC 140 4.0 120 3.5 100 3.0 I C (A) VCE (V) 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 120 8 VCE - Volts VCE - Volts I C = 140A 2.5 80 TJ = 150ºC 25ºC - 40ºC 60 2.0 70A 40 1.5 20 35A 1.0 0.5 0 7 8 9 10 11 12 VGE (V) © 2014 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 VGE (V) 8 9 10 IXYK100N65B3D1 IXYX100N65B3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 90 16 TJ = - 40ºC 80 I C = 70A 25ºC 70 I G = 10mA 12 60 10 V GE (V) 150ºC g f s (S) VCE = 325V 14 50 40 8 6 30 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 I C (A) QG (nC) Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 180 10,000 200 Cies I C (A) Capacitance (pF) 160 1,000 Coes 120 80 100 Cres TJ = 150ºC 40 RG = 3Ω dv / dt < 10V / ns f = 1 MHz 10 0 0 5 10 15 20 25 30 35 40 100 200 300 400 500 600 700 VCE (V) VCE (V) Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance (IGBT) 1000 1 VCE(sat) Limit I D (A) 25µs 100µs 10 Z(th)JC - ºC / W 100 1ms 1 0.1 0.01 TJ = 175ºC TC = 25ºC Single Pulse 10ms DC 0.1 1 10 100 1000 VDS (V) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width (s) 0.1 1 IXYK100N65B3D1 IXYX100N65B3D1 7 Eoff 6 Eon - --- TJ = 150ºC , VGE = 15V VCE = 400V 5 Eoff (mJ) 12 6 10 5 8 4 6 2 I C = 50A 1 0 3 6 9 12 15 18 21 24 27 30 Fig. 14. Inductive Switching Energy Loss vs. Collector Current Eoff 2 2 1 0 0 5 4 TJ = 150ºC 3 2 TJ = 25ºC 55 60 1 65 70 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff 6 Eon ---- RG = 3Ω , VGE = 15V VCE = 400V 5 7 240 6 220 80 85 90 95 0 100 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance tfi 800 td(off) - - - - 700 TJ = 150ºC, VGE = 15V VCE = 400V 200 5 I C = 100A 600 3 3 2 2 500 160 400 I C = 50A 140 300 I C = 100A 120 t d(off) (ns) 4 t f i (ns) 180 4 E on (mJ) E off (mJ) 75 I C (A) RG (Ω) 7 6 VCE = 400V 50 33 ---- RG = 3Ω , VGE = 15V 3 4 Eon 7 Eon (mJ) 3 7 Eon (mJ) I C = 100A 4 14 E off (mJ) Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 200 I C = 50A 1 0 25 50 75 100 125 1 100 0 150 80 100 0 3 6 9 12 15 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current tfi 200 td(off) - - - - RG = 3Ω , VGE = 15V 180 220 200 200 120 160 100 150 80 140 TJ = 25ºC 40 55 60 65 70 75 30 33 80 85 I C (A) © 2014 IXYS CORPORATION, All Rights Reserved 90 95 tfi td(off) - - - - 220 210 200 VCE = 400V I C = 50A 190 140 180 120 170 I C = 100A 100 160 80 150 60 140 130 40 130 120 100 20 25 50 75 100 TJ (ºC) 125 120 150 t d(off) (ns) 170 t d(off) (ns) TJ = 150ºC 50 27 RG = 3Ω , VGE = 15V 160 180 60 24 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 180 t f i (ns) 160 t f i (ns) 210 190 VCE = 400V 140 21 RG (Ω) TJ (ºC) 220 18 IXYK100N65B3D1 IXYX100N65B3D1 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 240 tri 200 180 140 150 120 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current tri td(on) - - - - TJ = 150ºC, VGE = 15V td(on) - - - 36 RG = 3Ω , VGE = 15V VCE = 400V VCE = 400V 120 90 I C = 100A 80 100 t r i (ns) 120 34 80 32 TJ = 25ºC 60 60 t d(on) (ns) 160 t d(on) (ns) t r i (ns) 38 30 TJ = 150ºC I C = 50A 40 0 3 6 9 12 15 18 21 24 27 30 30 40 0 20 28 50 33 55 60 Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 140 tri 120 VCE = 400V td(on) - - - - 26 100 70 30 60 I C (A) 60 t d(on) (ns) t r i (ns) 95 80 34 50 40 TC = 75ºC VCE = 400V 28 I C = 50A 26 0 100 125 24 150 TJ (ºC) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Triangular Wave TJ = 150ºC 40 30 75 90 90 38 32 50 85 Fig. 22. Maximum Peak Load Current vs. Frequency 80 25 80 36 I C = 100A 20 75 100 40 RG = 3Ω , VGE = 15V 100 70 I C (A) RG (Ω) 160 65 20 VGE = 15V 10 RG = 3Ω D = 0.5 Square Wave 0 10 100 fmax (kH) 1,000 IXYK100N65B3D1 IXYX100N65B3D1 Fig. 23. Diode Forward Characteristics Fig. 24. Reverse Recovery Charge vs. -diF/dt 200 3.8 180 3.6 160 3.4 140 3.2 QRR (µC) I F (A) 120 TJ = 150ºC 100 80 TJ = 25ºC 60 IF = 100A TJ = 150ºC 75A VR = 400V 50A 3.0 2.8 2.6 2.4 40 2.2 20 2.0 1.8 0 0 0.5 1 1.5 2 2.5 200 3 300 400 500 600 700 800 900 1000 -diF/ dt (A/µs) VF (V) Fig. 26. Reverse Recovery Time vs. -diF/dt Fig. 25. Reverse Recovery Current vs. -diF/dt 210 50 IF = 100A TJ = 150ºC 45 75A TJ = 150ºC 200 VR = 400V 50A VR = 400V 190 40 tRR (ns) I RR (A) 180 35 30 170 IF = 100A 160 25 75A 150 20 50A 140 15 130 200 300 400 500 600 700 800 900 200 1000 300 400 500 Fig. 27. Dynamic Parameters QRR, IRR vs. Junction Temperature 1.2 600 700 800 900 1000 -diF/dt (A/µs) diF/dt (A/µs) Fig. 28. Maximum Transient Thermal Impedance (Diode) 1 VR = 400V 1 I F = 100A -dIF/dt = 700A/µs Z (th)JC (ºC / W) KF 0.8 0.6 0.4 0.1 KF IRR 0.2 KF QRR 0 0 20 40 60 80 100 TJ (ºC) © 2014 IXYS CORPORATION, All Rights Reserved 120 140 160 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) IXYS REF: IXY_100N65B3(7D-Y42) 10-14-14