UTC MMBT5551G-X-AE3-R High voltage switching transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBT5551
NPN SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR

3
DESCRIPTION
The UTC MMBT5551 is a high voltage fast-switching NPN
power transistor. It is characterized with high breakdown voltage,
high current gain and high switching speed.

2
1
SOT-23
FEATURES
(JEDEC TO-236)
* High Collector-Emitter Voltage: VCEO=160V
* High current gain

ORDERING INFORMATION
Ordering Number
Note:

MMBT5551G-x-AE3-R
Pin Assignment: E: Emitter
B: Base
Package
SOT-23
C: Collector
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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MMBT5551

NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
VCBO
180
V
Collector -Emitter Voltage
VCEO
160
V
Emitter -Base Voltage
VEBO
6
V
DC Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
θJA
θJC
RATINGS
357
104
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
VCBO
IC=100A, IE=0
Collector-Emitter Breakdown Voltage
VCEO
IC=1mA, IB=0
Emitter-Base Breakdown Voltage
VEBO
IE=10μA, IC=0
Collector Cut-off Current
ICBO
VCB=120V, IE=0
Emitter Cut-off Current
IEBO
VBE=4V, IC =0
VCE=5V, IC =1mA
DC Current Gain(note)
hFE
VCE=5V, IC =10mA
VCE=5V, IC =50mA
IC=10mA, IB=1mA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=50mA, IB=5mA
IC=10mA, IB=1mA
Base-Emitter Saturation Voltage
VBE(SAT)
IC=50mA, IB=5mA
Current Gain Bandwidth Product
fT
VCE=10V, IC =10mA, f=100MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
IC=0.25mA, VCE=5V
Noise Figure
NF
RS=1kΩ, f=10Hz ~ 15.7kHz
Note: Pulse test: PW<300μs, Duty Cycle<2%

UNIT
°C/W
°C/W
MIN
180
160
6
80
80
80
100
TYP
MAX UNIT
V
V
V
50
nA
50
nA
160
400
0.15
0.2
1
1
300
6.0
V
V
V
V
MHz
pF
8
dB
CLASSIFICATION OF hFE
RANK
RANGE
A
80-170
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
B
150-240
C
200-400
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■ TYPICAL CHARACTERICS
Fig.1 Collector Output Capacitance
Fig.2 DC Current Gain
3
10
VCE=5V
8
f=1MHz
IE=0
DC current Gain, hFE
Capacitance, Cob (pF)
10
6
4
2
0
0
10
1
10
2
10
2
10
1
10
0
10
-1
10
Collector-Base Voltage (V)
Saturation Voltage (V)
Collector Current, Ic (mA)
1
10
VCE=5V
2
10
1
10
0.6
0.8
VBE(SAT)
0
10
-1
10
VCE(SAT)
-1
10
1.0
0
10
1
10
2
10
3
10
Collector Current, Ic (mA)
Fig.5 Current Gain-Bandwidth
Product
VCE=10V
2
10
1
10
10
1
S
m
10
COLLECTOR CURRENT, Ic (A)
3
10
SAFE OPERATING AREA
0.1
0S
1.
Current Gain-Bandwidth Product, fT (MHz)
Base-Emitter Voltage (V)
0
10
0
10
3
10
Ic=10*IB
-2
10
0
10
0.4
2
10
Fig.4 Saturation Voltage
3
10
0.2
1
10
Collector Current, Ic (mA)
Fig.3 Base-Emitter on Voltage
0
0
10
0.01
0.001
1
10
2
10
3
10
Collector Current, Ic (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
1
10
100
1000
Forward Voltage-VCE(V)
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NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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