PD - 96417
AUTOMOTIVE GRADE
AUIRF3007
HEXFET® Power MOSFET
Features
l Advanced Planar Technology
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
V(BR)DSS
D
G
S
75V
RDS(on) typ.
max
ID (Silicon Limited)
10.5mΩ
12.6mΩ
80A
ID (Package Limited)
75A
Description
D
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
D
S
TO-220AB
AUIRF3007
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
80
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
56
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
75
Units
A
c
320
PD @TC = 25°C Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
VGS
200
1.3
± 20
W
W/°C
V
mJ
IDM
Pulsed Drain Current
d
EAS
Single Pulse Avalanche Energy (Thermally Limited)
280
EAS (tested)
Single Pulse Avalanche Energy Tested Value
946
c
i
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
h
See Fig. 12a, 12b, 15, 16
-55 to + 175
°C
300
10 lbf in (1.1N m)
y
Thermal Resistance
Max.
–––
0.74
Case-to-Sink, Flat, Greased Surface
0.50
–––
Junction-to-Ambient
–––
62
Junction-to-Case
RθCS
RθJA
j
Parameter
y
Typ.
RθJC
A
mJ
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/1/11
AUIRF3007
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
75
–––
–––
2.0
180
–––
–––
–––
–––
–––
0.084
10.5
–––
–––
–––
–––
–––
–––
–––
–––
12.6
4.0
–––
20
250
200
-200
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 48A
V VDS = VGS, ID = 250μA
S VDS = 25V, ID = 48A
μA VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150°C
nA VGS = 20V
VGS = -20V
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Min. Typ. Max. Units
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
89
21
30
12
80
55
49
4.5
130
32
45
–––
–––
–––
–––
–––
nC
ns
nH
Conditions
ID = 48A
VDS = 60V
VGS = 10V
VDD = 38V
ID = 48A
RG = 4.6Ω
VGS = 10V
Between lead,
f
f
D
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
–––
–––
–––
–––
–––
–––
3270
520
78
3500
340
640
–––
–––
–––
–––
–––
–––
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Effective Output Capacitance
Diode Characteristics
Parameter
g
Min. Typ. Max. Units
h
IS
Continuous Source Current
–––
–––
80
ISM
(Body Diode)
Pulsed Source Current
–––
–––
320
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
85
280
1.3
130
420
c
pF
G
Conditions
MOSFET symbol
A
V
ns
nC
D
showing the
integral reverse
G
S
p-n junction diode.
TJ = 25°C, IS = 48A, VGS = 0V
TJ = 25°C, IF = 48A, VDD = 38V
di/dt = 100A/μs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Coss eff. is a fixed capacitance that gives the same charging
max. junction temperature. (See fig. 11).
time as Coss while VDS is rising from 0 to 80% VDSS .
Starting TJ = 25°C, L = 0.24mH
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
RG = 25Ω, IAS = 48A, VGS=10V. (See Figure 12).
avalanche performance.
ISD ≤ 48A, di/dt ≤ 330A/μs, VDD ≤ V(BR)DSS,
This value determined from sample failure population, starting
TJ ≤ 175°C
TJ = 25°C, L = 0.24mH, RG = 25Ω, IAS = 48A, VGS=10V.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Rθ is measured at TJ of approximately 90°C.
2
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AUIRF3007
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device
Model
RoHS Compliant
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
TO-220
N/A
†††
Class M4(+/- 600V )
(per AEC-Q101-002)
†††
Class H1C(+/- 2000V )
(per AEC-Q101-001)
†††
Class C5(+/- 2000V )
(per AEC-Q101-005)
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRF3007
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
4.5V
20μs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
4.5V
10
20μs PULSE WIDTH
Tj = 175°C
1
0.1
100
1
Fig 2. Typical Output Characteristics
1000
100
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current ( A)
100
Fig 1. Typical Output Characteristics
100
T J = 175°C
10
T J = 25°C
VDS = 25V
20μs PULSE WIDTH
1
4.0
5.0
6.0
7.0
8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
9.0
T J = 175°C
80
60
T J = 25°C
40
20
VDS = 25V
20μs PULSE WIDTH
0
0
40
80
120
160
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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nce
AUIRF3007
6000
Crss
Coss
4000
= Cgd
= Cds + Cgd
Ciss
3000
2000
1000
16
12
8
4
Coss
Crss
0
1
0
10
0
100
40
10000
ID, Drain-to-Source Current (A)
1000.0
100.0
TJ = 175°C
10.0
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VGS = 0V
1.4
1.6
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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120
160
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
T J = 25°C
80
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
ISD, Reverse Drain Current (A)
VDS= 60V
VDS= 38V
VDS= 15V
ID= 48A
VGS , Gate-to-Source Voltage (V)
5000
C, Capacitance (pF)
20
VGS = 0V,
f = 1 MHZ
C iss
= C gs + C gd , C ds
SHORTED
1000
100
100μsec
10
1
0.1
1.8
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1msec
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF3007
80
3.0
LIMITED BY PACKAGE
I D = 80A
2.5
40
20
0
25
50
75
100
125
TC , Case Temperature
150
175
2.0
(Normalized)
RDS(on) , Drain-to-Source On Resistance
ID , Drain Current (A)
60
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
( °C)
-20
0
20
40
60
80
100 120 140 160 180
( °C)
TJ, Junction Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
(Z thJC)
D = 0.50
Thermal Response
0.20
0.1
0.10
P DM
0.05
0.02
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
0.01
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
t1/ t 2
J = P DM x Z thJC
+T C
0.01
0.1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF3007
15V
600
DRIVER
L
VDS
20A
34A
48A
500
D.U.T
+
V
- DD
IAS
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
BOTTOM
RG
VGS
20V
ID
TOP
400
300
200
100
0
25
50
75
100
125
150
175
( °C)
Starting T , JJunction Temperature
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
4.0
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2μF
.3μF
D.U.T.
+
V
- DS
-VGS(th) Gate threshold Voltage (V)
VG
ID = 250μA
3.0
2.0
1.0
-75
-50
-25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRF3007
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Δ Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
Avalanche Current (A)
100
0.01
0.05
10
0.10
1
0.1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
300
TOP
Single Pulse
BOT TOM 50% Duty Cycle
ID = 48A
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
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AUIRF3007
D.U.T
Driver Gate Drive
+
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
*
ISD
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRF3007
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF3007
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF3007
Ordering Information
Base part
number
Package Type
Standard Pack
AUIRF3007
TO-220
Form
Tube
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Complete Part Number
Quantity
50
AUIRF3007
11
AUIRF3007
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
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that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
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the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
12
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