FMMT494Q 120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature BVCEO > 120V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current 500mW Power Dissipation hFE characterised up to 1A for high current gain hold up Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP capable (Note 4) SOT23 (Type DN) Case: SOT23 (Type DN) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) C E C B B E Top View Device Symbol Top View Pin-Out Ordering Information (Notes 4 & 5) Part Number FMMT494QTA FMMT494QTC Notes: Compliance Automotive Automotive Marking 494 494 Reel Size (inches) 7 13 Tape Width (mm) 8 8 Quantity per Reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/product-compliance-definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT23 (Type DN) 494 FMMT494Q Document number: DS40350 Rev. 1 - 2 494 = Product Type Marking Code 1 of 7 www.diodes.com November 2017 © Diodes Incorporated FMMT494Q Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Symbol VCBO VCEO VEBO IC ICM IB Value 140 120 7 1 2 200 Unit V V V A A mA Value 500 250 197 -55 to +150 Unit mW °C/W °C/W °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Lead (Note 7) Operating and Storage Temperature Range Symbol PD RθJA RθJL TJ, TSTG ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 ≥ 400 Unit V V JEDEC Class 3A C 6. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FMMT494Q Document number: DS40350 Rev. 1 - 2 2 of 7 www.diodes.com November 2017 © Diodes Incorporated FMMT494Q Thermal Characteristics and Derating Information 0.6 VCE(sat) Max Power Dissipation (W) -IC Collector Current (A) 1 Limit 100m DC 1s 100ms 10m 10ms 1ms 15 x 15mm FR4 1oz Copper 1m 1 100µs 10 100 -VCE Collector-Emitter Voltage (V) 15 x 15mm FR4 1oz Copper 0.5 0.4 0.3 0.2 0.1 0.0 0 20 D=0.5 D=0.2 Single Pulse 40 0 100µ D=0.05 D=0.1 1m 10m 100m 1 10 100 Pulse Width (s) 1k Max Power Dissipation (W) Thermal Resistance (°C/W) 15 x 15mm FR4 1oz Copper 120 80 Document number: DS40350 Rev. 1 - 2 100 120 140 160 15 x 15mm FR4 1oz Copper 100 10 1 0.1 100µ Transient Thermal Impedance FMMT494Q 80 Derating Curve 200 160 60 Temperature (°C) Safe Operating Area 240 40 3 of 7 www.diodes.com 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation November 2017 © Diodes Incorporated FMMT494Q Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES Collector-Emitter Saturation Voltage (Note 9) VCE(sat) Base-Emitter Turn-On Voltage(Note 9) Base-Emitter Saturation Voltage(Note 9) Output Capacitance VBE(on) VBE(sat) Cobo Min 140 120 7 — — — 100 100 60 20 — — — — — Static Forward Current Transfer Ratio (Note 9) hFE fT 100 Transition Frequency Note: Typ — — — — — — — — — — — — — — — Max — — — 100 100 100 — 300 — — 200 300 1.0 1.1 10 Unit V V V nA nA nA — — MHz — mV V V pF Test Condition IC = 100µA IC = 1mA IE = 100µA VCB = 120V VEB = 5V VCE = 120V IC = 1mA, VCE = 10V IC = 250mA, VCE = 10V IC = 500mA, VCE = 10V IC = 1A, VCE = 10V IC = 250mA, IB = 25mA IC = 500mA, IB = 50mA IC = 500mA, VCE = 10V IC = 500mA, IB = 50mA VCB = 10V, f = 1MHz VCE = 50V, IC = 10mA, f = 100MHz 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. FMMT494Q Document number: DS40350 Rev. 1 - 2 4 of 7 www.diodes.com November 2017 © Diodes Incorporated FMMT494Q Typical Electrical Characteristics FMMT494Q Document number: DS40350 Rev. 1 - 2 (@TA = +25°C, unless otherwise specified.) 5 of 7 www.diodes.com November 2017 © Diodes Incorporated FMMT494Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Type DN b SOT23 Type DN Dim Min Max Typ A 0.89 1.12 1.00 A1 0.01 0.10 0.05 b 0.30 0.51 0.45 c 0.08 0.20 0.10 D 2.80 3.04 3.00 E 2.10 2.64 2.42 E1 1.20 1.40 1.37 e 0.95 REF e1 1.90 REF L 0.25 0.60 0.30 L1 0.45 0.62 0.54 All Dimensions in mm E e e1 D E1 L A c A1 L Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Type DN Y Dimensions C X X1 Y Y1 C Y1 X FMMT494Q Document number: DS40350 Rev. 1 - 2 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com November 2017 © Diodes Incorporated FMMT494Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2017, Diodes Incorporated www.diodes.com FMMT494Q Document number: DS40350 Rev. 1 - 2 7 of 7 www.diodes.com November 2017 © Diodes Incorporated