HP MSA-0600-GP4 Cascadable silicon bipolar mmic amplifier Datasheet

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0600
Features
• Cascadable 50 Ω Gain Block
• Low Operating Voltage
(3.5␣ V typical V d)
• 3 dB Bandwidth:
DC to 1.0 GHz
• High Gain:
19.5 dB Typical at 0.5␣ GHz
• Low Noise Figure:
2.8␣ dB Typical at 0.5␣ GHz
Description
The MSA-0600 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial, industrial and
military applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.[1] See APPLICATIONS
section, “Chip Use”.
Typical Biasing Configuration
R bias
VCC > 5 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9583E
OUT
MSA
Chip Outline[1]
Vd = 3.5 V
6-362
Note:
1. This chip contains additional biasing
options. The performance specified
applies only to the bias option whose
bond pads are indicated on the chip
outline. Refer to the APPLICATIONS
section “Silicon MMIC Chip Use” for
additional information.
MSA-0600 Absolute Maximum Ratings
Absolute Maximum[1]
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
50 mA
200 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance[2,4]:
θjc = 50°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TMounting Surface (TMS) = 25°C.
3. Derate at 20 mW/°C for TMounting␣ Surface > 190°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions[2]: Id = 16 mA, ZO = 50 Ω
Units
Min.
Typ.
GP
Power Gain (|S21| 2)
f = 0.1 GHz
dB
20.5
∆GP
Gain Flatness
f = 0.1 to 0.6 GHz
dB
± 0.7
f3 dB
3 dB Bandwidth
VSWR
GHz
Input VSWR
1.0
f = 0.1 to 1.5 GHz
Output VSWR
f = 0.1 to 1.5 GHz
NF
50 Ω Noise Figure
f = 0.5 GHz
Max.
1.9:1
1.8:1
dB
2.8
P1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
2.0
IP3
Third Order Intercept Point
f = 0.5 GHz
dBm
14.5
tD
Group Delay
f = 0.5 GHz
psec
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
200
3.1
3.5
3.9
–8.0
Notes:
1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Part Number Ordering Information
Part Number
MSA-0600-GP4
Devices Per Tray
100
6-363
MSA-0600 Typical Scattering Parameters[1] (ZO = 50 Ω, TA = 25°C, Id = 16 mA)
S21
S11
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.05
.07
.09
.11
.13
.15
.19
.25
.32
.40
.45
.49
.51
.51
.51
.51
–148
–134
–125
–121
–120
–119
–121
–123
–134
–149
–157
–171
–174
179
170
162
20.6
20.4
20.2
20.0
19.7
19.4
18.7
17.9
15.7
13.5
11.6
9.9
8.3
6.9
5.7
4.7
10.66
10.48
10.28
10.01
9.71
9.34
8.60
7.82
6.10
4.73
3.79
3.12
2.60
2.21
1.93
1.71
173
166
159
151
145
140
123
117
96
79
70
61
51
43
37
29
–23.3
–23.1
–22.6
–22.4
–22.1
–21.8
–20.7
–19.8
–18.3
–17.4
–16.9
–16.6
–16.4
–16.3
–16.0
–15.9
.068
.070
.074
.076
.078
.081
.092
.102
.122
.136
.142
.148
.152
.153
.159
.161
4
8
13
15
17
20
25
26
29
27
30
28
25
26
24
24
.05
.09
.13
.16
.20
.22
.25
.28
.29
.26
.23
.19
.16
.12
.10
.11
–67
–91
–102
–110
–117
–124
–136
–148
–168
175
169
168
173
–170
–149
–126
1.05
1.04
1.01
1.00
0.98
0.97
0.93
0.90
0.89
0.91
0.97
1.03
1.10
1.22
1.31
1.41
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
25
20
Gain Flat to DC
1.0 GHz
12
9
2.0 GHz
10
6
5
3
0
0.1
0.3 0.5
1.0
3.0
0
6.0
10
15
20
FREQUENCY (GHz)
25
4.0
I d = 30 mA
4
3.5
NF (dB)
P1 dB (dBm)
8
I d = 20 mA
I d = 16 mA
3.0
2.5
0
I d = 12 mA
I d = 16 mA, 30 mA
I d = 20 mA
I d = 12 mA
-4
0.1
2.0
0.2 0.3
0.5
1.0
2.0
4.0
18
GP
5
0.1
0.2 0.3
0.5
1.0
2.0
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-364
5
4
NF
4
3
P1 dB
3
2
2
1
1
0
+25
+85
+125
TEMPERATURE (°C)
Figure 2. Power Gain vs. Current.
12
19
0
–55 –25
30
I d (mA)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 16 mA.
20
17
15
P1 dB (dBm)
G p (dB)
G p (dB)
15
Gp (dB)
21
0.1 GHz
0.5 GHz
18
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 0.5 GHz, Id = 16 mA.
NF (dB)
21
MSA-0600 Chip Dimensions
INPUT
300 µm
12.8 mil
300 µm
12.8 mil
GROUND
6-365
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