NJ4N65 POWER MOSFET 4.0A 650V N-CHANNEL POWER MOSFET DESCRIPTION The NJ4N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES 1 TO-220 1 * VDS = 650V * ID = 4.0A * RDS(ON) =2.5Ω@VGS = 10V. * Ultra Low gate charge (typical 15nC) * Low reverse transfer capacitance (CRSS = typical 8.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness TO-220F 1 TO-251 SYMBOL 1 TO-252 ORDERING INFORMATION Ordering Number Package NJ4N65-LI NJ4N65-BL NJ4N65F-LI NJ4N65A-LI NJ4N65D-TR NJ4N65D-LI Note: Pin Assignment: G: Gate TO-220 TO-220 TO-220F TO-251 TO-252 TO-252 D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tape Box Bulk Tube Tube Tape Ree Tube NJ4N65 POWER MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°ɋ, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note2) Continuous Drain Current Pulsed (Note2) Avalanche Energy Single Pulsed (Note3) 4N65-E Repetitive (Note2) Peak Diode Recovery dv/dt (Note4) TO-220 TO-220F Power Dissipation TO-251 TO-252 SYMBOL VDSS VGSS IAR ID IDM RATINGS 650 ±30 4.4 4.0 16 UNIT V V A A A EAS 200 mJ EAR dv/dt PD 10.6 4.5 106 36 50 50 mJ V/ns W Junction Temperature TJ +150 °ɋ Operating Temperature TOPR -55 ~ +150 °ɋ Storage Temperature TSTG -55 ~ +150 °ɋ Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 ȍ, Starting TJ = 25°C 4. ISD4.4A, di/dt 200A/ȝs, VDDBVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case PACKAGE TO-220 TO-220F TO-251 TO-252 TO-220 TO-220F TO-251 TO-252 SYMBOL șJA șJc RATINGS 62.5 83 83 1.18 3.47 2.5 2.5 UNIT °ɋ/W °ɋ/W NJ4N65 POWER MOSFET ELECTRICAL CHARACTERISTICS (TC =25°ɋ, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS VGS = 0 V, ID = 250ȝA 650 VDS = 650 V, VGS = 0 V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V ID=250ȝA, Referenced to 25°C Forward IGSS Reverse ːBVDSS/ƸTJ Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250ȝA 4N65 4N65-E Static Drain-Source On-State VGS = 10 V, ID = 2.2A RDS(ON) Resistance 4N65-N 4N65-Q DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 4N65 4N65-E Turn-On Rise Time tR 4N65-N 4N65-Q VDS = 325V, ID = 4.0A, RG = 25ȍ (Note 1, 2) Turn-Off Delay Time tD(OFF) 4N65 4N65-E Turn-Off Fall Time tF 4N65-N 4N65-Q Total Gate Charge QG VDS= 520V,ID= 4.0A, Gate-Source Charge QGS VGS= 10V (Note 1, 2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0V, IS = 4.4A, dIF/dt = 100 A/ȝs (Note 1) Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse width300ȝs, Duty cycle2% 2. Essentially independent of operating temperature Gate-Source Leakage Current MIN TYP MAX UNIT 10 100 -100 0.6 2.0 V ȝA nA nA V/°ɋ 2.4 2.4 2.9 2.9 4.0 2.5 2.5 3.1 3.1 520 70 8 670 90 11 pF pF pF 13 70 60 70 45 25 100 70 100 35 15 3.4 7.1 35 100 100 100 100 60 120 120 120 120 20 ns 250 1.5 V ȍ ns ns ns nC nC nC 1.4 V 4.4 A 17.6 A ns ȝC NJ4N65 POWER MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS Same Type as D.U.T. VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms NJ4N65 POWER MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDD VGS RG D.U.T. 10V Pulse Width 1ȝs Duty Factor0.1% Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit Time Unclamped Inductive Switching Waveforms NJ4N65 POWER MOSFET TYPICAL CHARACTERISTICS Breakdown Voltage Variation vs. Temperature On-Resistance Junction Temperature 3.0 Drain-Source On-Resistance, RDS(ON) (Normalized) (ȍ) Drain-Source Breakdown Voltage, BVDSS (Normalized) (V) 1.2 1.1 1.0 0.9 Note: 1. VGS=0V 2. ID=250μA 0.8 -50 -100 10 0 50 100 150 200 2.5 2.0 1.5 1.0 Note: 1. VGS=10V 2. ID=4A 0.5 0.0 -100 0 -50 50 100 150 Junction Temperature, TJ (°ɋ) Junction Temperature, TJ (°ɋ) On-State Characteristics Transfer Characteristics VGS Top: 10V 9V 8V 7V 6V 5.5V 5 V Bottorm:5.0V 200 10 25°ɋ 1 5.0V 150°ɋ 1 0.1 Notes: 1. 250μs Pulse Test 2. TC=25°ɋ 0.1 1 10 Drain-to-Source Voltage, VDS (V) ġ ġġġġ Notes: 1. VDS=50V 2. 250μs Pulse Test 0.1 2 4 6 8 10 Gate-Source Voltage, VGS (V) NJ4N65 POWER MOSFET TYPICAL CHARACTERISTICS(Cont.) Capacitance Characteristics (Non-Repetitive) 1200 1000 600 Gate Charge Characteristics 12 Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd 10 Ciss 800 Coss 200 0 0.1 VDS=300V VDS=480V 8 Notes: 1. VGS=0V 2. f = 1MHz VDS=120V 6 4 400 2 Crss Note: ID=4A 0 1 0 10 5 10 15 20 Total Gate Charge, QG (nC) Drain-SourceVoltage, VDS (V) PD (w) Thermal Response, șJC (t) 25