Production specification Silicon Bridge Rectifiers GBS6A--GBS6M FEATURES z Rating to 1000V PRV z Surge overload rating to 140 Amperes peak z Reliable low cost construction utilizing molded Pb Lead-free plastic technique results in inexpensive product z Lead solderable per MIL-STD-202 method 208 Maximum Ratings(@TA = 25°C unless otherwise specified) Characteristic Symbol GBS GBS GBS GBS GBS GBS GBS 6A 6B 6D 6G 6J 6K 6M UNITS Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V 50Hz sine wave, R-load Without heat sink Ta=25℃ 50Hz sine wave, R-load With heat sink Tc=50℃ 2.3 IF(AV) A 6.0 Peak forward surge current 8.3ms single half-sine-wave IFSM 140 A superimposed on rated load Thermal Characteristics Characteristic Symbol Rating for fusing (t < 8.3 ms) I2t Typical junction capacitance per diode CJ Typical thermal resistance Operating junction temperature range Storage temperature range GBS GBS GBS GBS GBS GBS GBS 6A 6B 6D 6G 6J 6K 6M 82 95 UNITS A2s 40 pF RθJA 22 RθJC 3.5 TJ - 55 ---- + 150 ℃ TSTG - 55 ---- + 150 ℃ Symbol Value UNITS VF 1.05 V °C/W Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Maximum instantaneous forward voltage @3.0A Maximum reverse current @TA=25 ℃ at rated DC blocking voltage @TA=100℃ Document Number:GBS802AA IR 5.0 500 μA www.gmicroelec.com 1 Production specification Silicon Bridge Rectifiers GBS6A--GBS6M PACKAGE OUTLINE DIMENSIONS GBS Dim Min Max A 13.65 14.15 B 9.80 10.20 C 2.95 3.25 E 0.35 0.65 F 11.70 12.30 I 0.65 0.95 J 0.90 1.20 K 3.60 4.00 P Ø3.2Typical All Dimensions in mm Document Number:GBS802AA www.gmicroelec.com 2 Production specification Silicon Bridge Rectifiers Document Number:GBS802AA GBS6A--GBS6M www.gmicroelec.com 3