Sample & Buy Product Folder Support & Community Tools & Software Technical Documents Reference Design INA199 SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 INA199 26-V, Bidirectional, Zero-Drift, Low- or High-Side, Voltage Output Current Shunt Monitor 1 Features 3 Description • • The INA199 series of voltage output, current shunt monitors (also called current-sense amplifiers) can sense drops across shunts at common-mode voltages from –0.3 V to 26 V, independent of the supply voltage. Three fixed gains are available: 50 V/V, 100 V/V, and 200 V/V. The low offset of the zero-drift architecture enables current sensing with maximum drops across the shunt as low as 10-mV full-scale. 1 • • • • Wide Common-Mode Range: –0.3 V to 26 V Offset Voltage: ±150 μV (Maximum) (Enables shunt drops of 10-mV full-scale) Accuracy – ±1.5% Gain Error (Maximum Over Temperature) – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain Drift (Maximum) Choice of Gains: – INA199x1: 50 V/V – INA199x2: 100 V/V – INA199x3: 200 V/V Quiescent Current: 100 μA (Maximum) Packages: SC70, UQFN-10 These devices operate from a single 2.7-V to 26-V power supply, drawing a maximum of 100 μA of supply current. All versions are specified from –40°C to 105°C, and offered in both SC70-6 and thin UQFN10 packages. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) SC70 (6) 2.00 mm × 1.25 mm UQFN (10) 1.80 mm × 1.40 mm 2 Applications INA199 • • • • • • • (1) For all available packages, see the orderable addendum at the end of the data sheet. Notebook Computers Cell Phones Qi-Compliant Wireless Charging Transmitters Telecom Equipment Power Management Battery Chargers Welding Equipment Simplified Schematic RSHUNT Supply Reference Voltage OUT REF GND +2.7V to +26V R1 R3 R2 R4 Load Output IN- IN+ V+ CBYPASS 0.01mF to 0.1mF 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. INA199 SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 8 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Device Comparison Table..................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 4 4 5 7.1 7.2 7.3 7.4 7.5 7.6 7.7 5 5 5 6 6 7 8 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics, TA = 25°C ........................ Electrical Characteristics, TA = –40°C to 105°C ....... Typical Characteristics .............................................. Detailed Description ............................................ 12 8.1 Overview ................................................................. 12 8.2 Functional Block Diagram ....................................... 12 8.3 Feature Description................................................. 13 8.4 Device Functional Modes........................................ 14 9 Application and Implementation ........................ 19 9.1 Application Information............................................ 19 9.2 Typical Applications ................................................ 19 10 Power Supply Recommendations ..................... 22 11 Layout................................................................... 22 11.1 Layout Guidelines ................................................. 22 11.2 Layout Example .................................................... 22 12 Device and Documentation Support ................. 23 12.1 12.2 12.3 12.4 12.5 Documentation Support ........................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 23 23 23 23 23 13 Mechanical, Packaging, and Orderable Information ........................................................... 23 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision D (November 2012) to Revision E • Page Added ESD Ratings table, Thermal Information table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ..................................... 1 Changes from Revision C (August 2012) to Revision D Page • Changed Frequency Response, Bandwidth parameter in Electrical Characteristics table .................................................... 6 • Updated Figure 21................................................................................................................................................................ 14 • Updated Figure 22................................................................................................................................................................ 15 Changes from Revision B (February 2010) to Revision C Page • Added INA199Bx gains to fourth Features bullet ................................................................................................................... 1 • Added INA199Bx data to Product Family Table..................................................................................................................... 4 • Added INA199Bx data to Package Information table ............................................................................................................. 4 • Added QFN package information to Temperature Range section of Electrical Characteristics table.................................... 6 • Added silicon version B data to Input, Common-Mode Input Range parameter of Electrical Characteristics table .............. 7 • Updated Figure 3.................................................................................................................................................................... 8 • Updated Figure 9.................................................................................................................................................................... 9 • Updated Figure 12.................................................................................................................................................................. 9 • Changed last paragraph of the Selecting RS section to cover both INA199Ax and INA199Bx versions ............................. 13 • Changed Input Filtering section............................................................................................................................................ 14 • Added Improving Transient Robustness section .................................................................................................................. 18 2 Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 INA199 www.ti.com SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 Changes from Revision A (June 2009) to Revision B Page • Deleted ordering information content from Package/Ordering table ...................................................................................... 4 • Updated DCK pinout drawing ................................................................................................................................................. 4 Changes from Original (April 2009) to Revision A • Page Added ordering number and transport media, quantity columns to Package/Ordering Information table ............................. 4 Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 3 INA199 SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 www.ti.com 5 Device Comparison Table PRODUCT GAIN R3 AND R4 R1 AND R2 INA199x1 50 20 kΩ 1 MΩ INA199x2 100 10 kΩ 1 MΩ INA199x3 200 5 kΩ 1 MΩ 6 Pin Configuration and Functions DCK Package 6-Pin SC70 Top View RSW Package 10-Pin UQFN Top View REF 1 6 OUT GND 2 5 IN- V+ 3 4 NC REF 8 GND 9 OUT 10 (1) 7 V+ 6 5 IN- 4 IN- 3 IN+ IN+ 1 NC (1) (1) 2 IN+ NC denotes no internal connection. These pins can be left floating or connected to any voltage between GND and V+. Pin Functions PIN NAME GND I/O DESCRIPTION SC70 UQFN 2 9 Analog Ground Connect to load side of shunt resistor. Connect to supply side of shunt resistor. IN– 5 4, 5 Analog input IN+ 4 2, 3 Analog input NC — 1, 7 — Output voltage Not internally connected. Leave floating or connect to ground. OUT 6 10 Analog output REF 1 8 Analog input Reference voltage, 0 V to V+ V+ 3 6 Analog Power supply, 2.7 V to 26 V 4 Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 INA199 www.ti.com SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN Supply voltage Analog inputs, VIN+, VIN– (2) Differential (VIN+) – (VIN–) Common-mode (3) REF input Output (3) 26 V 26 V GND – 0.3 (V+) + 0.3 V GND – 0.3 (V+) + 0.3 V 5 mA 125 °C 150 °C 150 °C Junction temperature (1) (2) (3) V –26 –40 Storage temperature, Tstg UNIT 26 GND – 0.3 Input current Into all pins (3) Operating temperature MAX –65 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively. Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5 mA. 7.2 ESD Ratings VALUE UNIT INA199A1, INA199A2, and INA199A3 in DCK and RSW Packages V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±4000 Charged-device model (CDM), per JEDEC specification JESD22C101 (2) ±1000 Machine Model (MM) ±200 V INA199B1, INA199B2, and INA199B3 in DCK and RSW Packages V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±1500 Charged-device model (CDM), per JEDEC specification JESD22C101 (2) ±1000 Machine Model (MM) ±100 V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN VCM Common-mode input voltage VS Operating supply voltage (applied to V+) TA Operating free-air temperature NOM MAX 12 V 5 –40 UNIT V 105 °C Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 5 INA199 SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 www.ti.com 7.4 Thermal Information INA199 THERMAL METRIC (1) DCK (SC70) RSW (UQFN) 6 PINS 10 PINS UNIT RθJA Junction-to-ambient thermal resistance 227.3 107.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 79.5 56.5 °C/W RθJB Junction-to-board thermal resistance 72.1 18.7 °C/W ψJT Junction-to-top characterization parameter 3.6 1.1 °C/W ψJB Junction-to-board characterization parameter 70.4 18.7 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance — — °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.5 Electrical Characteristics, TA = 25°C At TA = 25°C, VS = 5 V, VIN+ = 12 V, VSENSE = VIN+ – VIN–, and VREF = VS / 2, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ±5 ±150 μV INPUT Offset voltage, RTI (1) VSENSE = 0 mV PSR Power supply rejection VS = 2.7 V to 18 V, VIN+ = 18 V, VSENSE = 0 mV IB Input bias current VSENSE = 0 mV 28 μA IOS Input offset current VSENSE = 0 mV ±0.02 μA INA199x1 50 V/V INA199x2 100 V/V 200 V/V VOS μV/V ±0.1 OUTPUT G Gain INA199x3 Nonlinearity error VSENSE = –5 mV to 5 mV ±0.01% Maximum capacitive load No Sustained Oscillation 1 nF CLOAD = 10 pF, INA199A1 and INA199B1 80 kHz CLOAD = 10 pF, INA199A2 and INA199B2 30 kHz CLOAD = 10 pF, INA199A3 and INA199B3 14 kHz 0.4 V/μs 25 nV/√Hz FREQUENCY RESPONSE GBW Bandwidth SR Slew rate NOISE, RTI (1) Voltage Noise Density POWER SUPPLY VS Operating voltage range –20°C to 85°C IQ Quiescent current VSENSE = 0 mV 65 26 V 100 μA TEMPERATURE RANGE (1) 6 Specified range –40 105 °C Operating range –40 125 °C RTI = Referred-to-input. Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 INA199 www.ti.com SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 7.6 Electrical Characteristics, TA = –40°C to 105°C At TA = 25°C, VS = 5 V, VIN+ = 12 V, VSENSE = VIN+ – VIN–, and VREF = VS / 2, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT VCM Common-mode input range CMR Common-mode rejection dVOS/dT Offset voltage, RTI (1) vs temperature Version A –0.3 26 Version B –0.1 26 VIN+ = 0 V to 26 V, VSENSE = 0 mV 100 120 V V dB 0.1 0.5 ±0.03% ±1.5% μV/°C OUTPUT Gain error VSENSE = –5 mV to 5 m V vs temperature 3 10 ppm/°C Swing to V+ power-supply rail RL = 10 kΩ to GND (V+) – 0.05 (V+) – 0.2 V Swing to GND RL = 10 kΩ to GND (VGND) + 0.005 (VGND) + 0.05 V 26 V POWER SUPPLY VS Operating voltage range IQ Quiescent current (1) 2.7 –20°C to 85°C over temperature 2.5 V 115 μA RTI = Referred-to-input. Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 7 INA199 SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 www.ti.com 7.7 Typical Characteristics 20 1.0 15 0.8 0.6 10 0.4 CMRR (mV/V) Offset Voltage (mV) Performance measured with the INA199A3 at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2, unless otherwise noted. 5 0 -5 0.2 0 -0.2 -0.4 -10 -0.6 -15 -0.8 -20 -50 0 -25 25 50 75 100 -1.0 -50 125 -25 0 25 Figure 1. Offset Voltage vs Temperature 125 140 G = 200 120 |PSRR| (dB) 50 Gain (dB) 100 160 60 40 30 G = 50 G = 100 20 100 80 60 VS = +5V + 250mV Sine Disturbance VCM = 0V VDIF = Shorted VREF = 2.5V 40 10 VCM = 0V VDIF = 15mVPP Sine 0 20 0 -10 10 100 1k 10k 100k 1M 1 10M 10 100 Figure 3. Gain vs Frequency Output Voltage Swing (V) 140 120 100 80 60 VS = +5V VCM = 1V Sine VDIF = Shorted VREF = 2.5V 20 0 1 10 100 1k 10k 100k Figure 4. Power-Supply Rejection Ratio vs Frequency 160 40 1k Frequency (Hz) Frequency (Hz) |CMRR| (dB) 75 Figure 2. Common-Mode Rejection Ratio vs Temperature 70 10k 100k V+ (V+) - 0.5 (V+) - 1.0 (V+) - 1.5 (V+) - 2.0 (V+) - 2.5 (V+) - 3.0 VS = 5V to 26V VS = 2.7V to 26V VS = 2.7V GND + 3.0 GND + 2.5 GND + 2.0 GND + 1.5 GND + 1.0 GND + 0.5 GND TA = -40°C TA = +25°C TA = +105°C VS = 2.7V to 26V 0 1M Frequency (Hz) 5 10 15 20 25 30 35 40 Output Current (mA) Figure 5. Common-Mode Rejection Ratio vs Frequency 8 50 Temperature (°C) Temperature (°C) Figure 6. Output Voltage Swing vs Output Current Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 INA199 www.ti.com SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 Typical Characteristics (continued) 50 V+ (V+) - 0.25 (V+) - 0.50 (V+) - 0.75 (V+) - 1.00 (V+) - 1.25 (V+) - 1.50 +25°C 40 -20°C Input Bias Current (mA) Output Voltage (V) Performance measured with the INA199A3 at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2, unless otherwise noted. +85°C GND + 1.50 GND + 1.25 GND + 1.00 GND + 0.75 GND + 0.50 GND + 0.25 GND +85°C +25°C IB+, IB-, VREF = 0V 30 20 IB+, IB-, VREF = 2.5V 10 0 -20°C -10 0 2 4 5 8 10 12 14 0 18 16 5 10 15 20 25 30 Common-Mode Voltage (V) Output Current (mA) VS = 2.5 V Figure 7. Output Voltage Swing vs Output Current Figure 8. Input Bias Current vs Common-Mode Voltage With Supply Voltage = 5 V 30 30 IB+, IB-, VREF = 0V and IB-, VREF = 2.5V 20 Input Bias Current (mA) Input Bias Current (mA) 25 15 10 5 IB+, VREF = 2.5V 29 28 27 26 0 25 -50 -5 0 5 10 15 20 25 30 -25 0 25 50 75 100 125 Common-Mode Voltage (V) Temperature (°C) Figure 9. Input Bias Current vs Common-Mode Voltage With Supply Voltage = 0 V (Shutdown) Figure 10. Input Bias Current vs Temperature Input-Referred Voltage Noise (nV/ÖHz) Quiescent Current (mA) 70 68 66 64 62 60 -50 100 G = 50 VS = ±2.5V VREF = 0V VIN-, VIN+ = 0V 1 -25 0 25 50 75 100 125 G = 200 G = 100 10 10 100 1k 10k 100k Temperature (°C) Frequency (Hz) Figure 11. Quiescent Current vs Temperature Figure 12. Input-Referred Voltage Noise vs Frequency Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 9 INA199 SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 www.ti.com Typical Characteristics (continued) 2VPP Output Signal 10mVPP Input Signal Input Voltage (5mV/diV) Referred-to-Input Voltage Noise (200nV/div) Output Voltage (0.5V/diV) Performance measured with the INA199A3 at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2, unless otherwise noted. VS = ±2.5V VCM = 0V VDIF = 0V VREF = 0V Time (1s/div) Time (100ms/div) Figure 13. 0.1-Hz to 10-Hz Voltage Noise (Referred-to-Input) Figure 14. Step Response (10-mVPP Input Step) Output Voltage 0V 2V/div 0V Output Voltage (40mV/div) Common-Mode Voltage (1V/div) Inverting Input Overload Common Voltage Step Output 0V VS = 5V, VCM = 12V, VREF = 2.5V Time (50ms/div) Time (250ms/div) Figure 15. Common-Mode Voltage Transient Response Figure 16. Inverting Differential Input Overload Supply Voltage 1V/div 2V/div Noninverting Input Overload Output Output Voltage 0V 0V VS = 5V, VCM = 12V, VREF = 2.5V VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V Time (250ms/div) Time (100ms/div) Figure 17. Noninverting Differential Input Overload 10 Submit Documentation Feedback Figure 18. Start-Up Response Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 INA199 www.ti.com SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 Typical Characteristics (continued) Performance measured with the INA199A3 at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2, unless otherwise noted. 1V/div Supply Voltage Output Voltage 0V VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V Time (100ms/div) Figure 19. Brownout Recovery Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 11 INA199 SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 www.ti.com 8 Detailed Description 8.1 Overview The INA199 is a 26-V common mode, zero-drift topology, current-sensing amplifier that can be used in both lowside and high-side configurations. It is a specially-designed, current-sensing amplifier that is able to accurately measure voltages developed across a current-sensing resistor on common-mode voltages that far exceed the supply voltage powering the device. Current can be measured on input voltage rails as high as 26 V while the device can be powered from supply voltages as low as 2.7 V. The zero-drift topology enables high-precision measurements with maximum input offset voltages as low as 150 µV with a maximum temperature contribution of 0.5 µV/°C over the full temperature range of –40°C to +105°C. 8.2 Functional Block Diagram V+ IN- OUT IN+ + REF GND 12 Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 INA199 www.ti.com SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 8.3 Feature Description 8.3.1 Basic Connections Figure 20 shows the basic connections for the INA199. The input pins, IN+ and IN–, must be connected as close as possible to the shunt resistor to minimize any resistance in series with the shunt resistor. RSHUNT Power Supply Load 5V Supply CBYPASS 0.1µF V+ IN- - OUT + IN+ ADC Microcontroller REF GND Figure 20. Typical Application Power-supply bypass capacitors are required for stability. Applications with noisy or high-impedance power supplies may require additional decoupling capacitors to reject power-supply noise. Connect bypass capacitors close to the device pins. On the RSW package, two pins are provided for each input. These pins must be tied together (that is, tie IN+ to IN+ and tie IN– to IN–). 8.3.2 Selecting RS The zero-drift offset performance of the INA199 offers several benefits. Most often, the primary advantage of the low offset characteristic enables lower full-scale drops across the shunt. For example, non-zero-drift current shunt monitors typically require a full-scale range of 100 mV. The INA199 series gives equivalent accuracy at a full-scale range on the order of 10 mV. This accuracy reduces shunt dissipation by an order of magnitude with many additional benefits. Alternatively, there are applications that must measure current over a wide dynamic range that can take advantage of the low offset on the low end of the measurement. Most often, these applications can use the lower gain of 50 or 100 to accommodate larger shunt drops on the upper end of the scale. For instance, an INA199A1 operating on a 3.3-V supply could easily handle a full-scale shunt drop of 60 mV, with only 150 μV of offset. Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 13 INA199 SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 www.ti.com 8.4 Device Functional Modes 8.4.1 Input Filtering An obvious and straightforward filtering location is at the device output. However, this location negates the advantage of the low output impedance of the internal buffer. The only other filtering option is at the device input pins. This location, though, does require consideration of the ±30% tolerance of the internal resistances. Figure 21 shows a filter placed at the inputs pins. RSHUNT Bus Supply Load Power Supply CBYPASS 0.1µF V+ RINT INRS < 10 Ÿ Bias CF IN+ RINT RS < 10 Ÿ OUT Output + REF GND Figure 21. Filter at Input Pins The addition of external series resistance, however, creates an additional error in the measurement so the value of these series resistors must be kept to 10 Ω (or less if possible) to reduce impact to accuracy. The internal bias network shown in Figure 21 present at the input pins creates a mismatch in input bias currents when a differential voltage is applied between the input pins. If additional external series filter resistors are added to the circuit, the mismatch in bias currents results in a mismatch of voltage drops across the filter resistors. This mismatch creates a differential error voltage that subtracts from the voltage developed at the shunt resistor. This error results in a voltage at the device input pins that is different than the voltage developed across the shunt resistor. Without the additional series resistance, the mismatch in input bias currents has little effect on device operation. The amount of error these external filter resistor add to the measurement can be calculated using Equation 2 where the gain error factor is calculated using Equation 1. The amount of variance in the differential voltage present at the device input relative to the voltage developed at the shunt resistor is based both on the external series resistance value as well as the internal input resistors, R3 and R4 (or RINT as shown in Figure 21). The reduction of the shunt voltage reaching the device input pins appears as a gain error when comparing the output voltage relative to the voltage across the shunt resistor. A factor can be calculated to determine the amount of gain error that is introduced by the addition of external series resistance. The equation used to calculate the expected deviation from the shunt voltage to what is seen at the device input pins is given in Equation 1: (1250 ´ RINT) Gain Error Factor = (1250 ´ RS) + (1250 ´ RINT) + (RS ´ RINT) where: • • 14 RINT is the internal input resistor (R3 and R4). RS is the external series resistance. Submit Documentation Feedback (1) Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 INA199 www.ti.com SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 Device Functional Modes (continued) With the adjustment factor equation including the device internal input resistance, this factor varies with each gain version, as listed in Table 1. Each individual device gain error factor is listed in Table 2. Table 1. Input Resistance PRODUCT GAIN RINT (kΩ) INA199x1 50 20 INA199x2 100 10 INA199x3 200 5 Table 2. Device Gain Error Factor PRODUCT SIMPLIFIED GAIN ERROR FACTOR 20,000 INA199x1 (17 ´ RS) + 20,000 10,000 INA199x2 (9 ´ RS) + 10,000 1000 RS + 1000 INA199x3 The gain error that can be expected from the addition of the external series resistors can then be calculated based on Equation 2: Gain Error (%) = 100 - (100 ´ Gain Error Factor) (2) For example, using an INA199A2 or INA199B2 and the corresponding gain error equation from Table 2, a series resistance of 10-Ω results in a gain error factor of 0.991. The corresponding gain error is then calculated using Equation 2, resulting in a gain error of approximately 0.89% solely because of the external 10-Ω series resistors. Using an INA199A1 or INA199B1 with the same 10-Ω series resistor results in a gain error factor of 0.991 and a gain error of 0.84% again solely because of these external resistors. 8.4.2 Shutting Down the INA199 Series Although the INA199 series does not have a shutdown pin, the low power consumption of the device allows the output of a logic gate or transistor switch to power the INA199. This gate or switch turns on and turns off the INA199 power-supply quiescent current. However, in current shunt monitoring applications, there is also a concern for how much current is drained from the shunt circuit in shutdown conditions. Evaluating this current drain involves considering the simplified schematic of the INA199 in shutdown mode shown in Figure 22. RSHUNT Supply Reference Voltage GND Shutdown Control Output OUT REF 1MW R3 1MW R4 Load IN- IN+ V+ CBYPASS PRODUCT R3 AND R4 INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 20kW 10kW 5kW NOTE: 1-MΩ paths from shunt inputs to reference and INA199 outputs. Figure 22. Basic Circuit for Shutting Down INA199 With Grounded Reference Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 15 INA199 SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 www.ti.com The is typically slightly more than 1-MΩ impedance (from the combination of 1-MΩ feedback and 5-kΩ input resistors) from each input of the INA199 to the OUT pin and to the REF pin. The amount of current flowing through these pins depends on the respective ultimate connection. For example, if the REF pin is grounded, the calculation of the effect of the 1-MΩ impedance from the shunt to ground is straightforward. However, if the reference or operational amplifier is powered while the INA199 is shut down, the calculation is direct; instead of assuming 1-MΩ to ground, however, assume 1-MΩ to the reference voltage. If the reference or operational amplifier is also shut down, some knowledge of the reference or operational amplifier output impedance under shutdown conditions is required. For instance, if the reference source behaves as an open circuit when not powered, little or no current flows through the 1-MΩ path. Regarding the 1-MΩ path to the output pin, the output stage of a disabled INA199 does constitute a good path to ground. Consequently, this current is directly proportional to a shunt common-mode voltage impressed across a 1-MΩ resistor. NOTE When the device is powered up, there is an additional, nearly constant, and well-matched 25 μA that flows in each of the inputs as long as the shunt common-mode voltage is 3 V or higher. Below 2-V common-mode, the only current effects are the result of the 1-MΩ resistors. 8.4.3 REF Input Impedance Effects As with any difference amplifier, the INA199 series common-mode rejection ratio is affected by any impedance present at the REF input. This concern is not a problem when the REF pin is connected directly to most references or power supplies. When using resistive dividers from the power supply or a reference voltage, the REF pin must be buffered by an operational amplifier. In systems where the INA199 output can be sensed differentially, such as by a differential input analog-to-digital converter (ADC) or by using two separate ADC inputs, the effects of external impedance on the REF input can be cancelled. Figure 23 depicts a method of taking the output from the INA199 by using the REF pin as a reference. RSHUNT Supply Load ADC OUT REF GND +2.7V to +26V R1 R3 R2 R4 Output IN- IN+ V+ CBYPASS 0.01mF to 0.1mF Figure 23. Sensing INA199 to Cancel Effects of Impedance on the REF Input 8.4.4 Using the INA199 With Common-Mode Transients Above 26 V With a small amount of additional circuitry, the INA199 series can be used in circuits subject to transients higher than 26 V, such as automotive applications. Use only Zener diode or Zener-type transient absorbers (sometimes referred to as Transzorbs); any other type of transient absorber has an unacceptable time delay. Start by adding a pair of resistors as shown in Figure 24 as a working impedance for the Zener. It is desirable to keep these resistors as small as possible, most often around 10 Ω. Larger values can be used with an effect on gain that is 16 Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 INA199 www.ti.com SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 discussed in the section on input filtering. Because this circuit limits only short-term transients, many applications are satisfied with a 10-Ω resistor along with conventional Zener diodes of the lowest power rating that can be found. This combination uses the least amount of board space. These diodes can be found in packages as small as SOT-523 or SOD-523. Refer to TIDA-00302 Transient Robustness for Current Shunt Monitor Design Guide, TIDU473 for more information on transient robustness and current shunt monitor input protection. RSHUNT Supply RPROTECT 10W Load RPROTECT 10W Reference Voltage GND 1MW R3 1MW R4 V+ Shutdown Control Output OUT REF IN- IN+ CBYPASS Figure 24. INA199 Transient Protection Using Dual Zener Diodes In the event that low-power zeners do not have sufficient transient absorption capability and a higher power transzorb must be used, the most package-efficient solution then involves using a single transzorb and back-toback diodes between the device inputs. The most space-efficient solutions are dual series-connected diodes in a single SOT-523 or SOD-523 package. This method is shown in Figure 25. In either of these examples, the total board area required by the INA199 with all protective components is less than that of an SO-8 package, and only slightly greater than that of an MSOP-8 package. RSHUNT Supply RPROTECT 10W Load RPROTECT 10W Reference Voltage OUT REF GND 1MW R3 1MW R4 V+ Shutdown Control Output IN- IN+ CBYPASS Figure 25. INA199 Transient Protection Using a Single Transzorb and Input Clamps Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 17 INA199 SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 www.ti.com 8.4.5 Improving Transient Robustness Applications involving large input transients with excessive dV/dt above 2 kV per microsecond present at the device input pins may cause damage to the internal ESD structures on version A devices. This potential damage is a result of the internal latching of the ESD structure to ground when this transient occurs at the input. With significant current available in most current-sensing applications, the large current flowing through the input transient-triggered, ground-shorted ESD structure quickly results in damage to the silicon. External filtering can be used to attenuate the transient signal prior to reaching the inputs to avoid the latching condition. Take care to ensure that external series input resistance does not significantly impact gain error accuracy. For accuracy purposes, keep the resistance under 10 Ω if possible. Ferrite beads are recommended for this filter because of their inherently low DC ohmic value. Ferrite beads with less than 10 Ω of resistance at DC and over 600 Ω of resistance at 100 MHz to 200 MHz are recommended. The recommended capacitor values for this filter are between 0.01 µF and 0.1 µF to ensure adequate attenuation in the high-frequency region. This protection scheme is shown in Figure 26. Again, refer to TIDA-00302 Transient Robustness for Current Shunt Monitor Design Guide, TIDU473 for more information on transient robustness and current shunt monitor input protection. Shunt Reference Voltage Load Supply Device OUT REF 1MW R3 GND IN- - + MMZ1608B601C IN+ V+ +2.7V to +26V 0.01mF to 0.1mF Output 1MW R4 0.01mF to 0.1mF Figure 26. Transient Protection To minimize the cost of adding these external components to protect the device in applications where large transient signals may be present, version B devices are now available with new ESD structures that are not susceptible to this latching condition. Version B devices are incapable of sustaining these damage-causing latched conditions so they do not have the same sensitivity to the transients that the version A devices have, thus making the version B devices a better fit for these applications. 18 Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 INA199 www.ti.com SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The INA199 measures the voltage developed across a current-sensing resistor when current passes through it. The ability to drive the reference pin to adjust the functionality of the output signal offers multiple configurations, as discussed throughout this section. 9.2 Typical Applications 9.2.1 Unidirectional Operation Bus Supply Load Power Supply CBYPASS 0.1µF V+ IN- - OUT Output + IN+ REF GND Figure 27. Unidirectional Application Schematic 9.2.1.1 Design Requirements The device can be configured to monitor current flowing in one direction (unidirectional) or in both directions (bidirectional) depending on how the REF pin is configured. The most common case is unidirectional where the output is set to ground when no current is flowing by connecting the REF pin to ground, as shown in Figure 27. When the input signal increases, the output voltage at the OUT pin increases. 9.2.1.2 Detailed Design Procedure The linear range of the output stage is limited in how close the output voltage can approach ground under zero input conditions. In unidirectional applications where measuring very low input currents is desirable, bias the REF pin to a convenient value above 50 mV to get the output into the linear range of the device. To limit commonmode rejection errors, TI recommends buffering the reference voltage connected to the REF pin. A less frequently-used output biasing method is to connect the REF pin to the supply voltage, V+. This method results in the output voltage saturating at 200 mV below the supply voltage when no differential input signal is present. This method is similar to the output saturated low condition with no input signal when the REF pin is connected to ground. The output voltage in this configuration only responds to negative currents that develop negative differential input voltage relative to the device IN– pin. Under these conditions, when the differential input signal increases negatively, the output voltage moves downward from the saturated supply voltage. The voltage applied to the REF pin must not exceed the device supply voltage. Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 19 INA199 SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 www.ti.com Typical Applications (continued) 9.2.1.3 Application Curve Output Voltage (1 V/div) An example output response of a unidirectional configuration is shown in Figure 28. With the REF pin connected directly to ground, the output voltage is biased to this zero output level. The output rises above the reference voltage for positive differential input signals but cannot fall below the reference voltage for negative differential input signals because of the grounded reference voltage. 0V Output VREF Time (500 µs /div) C001 Figure 28. Unidirectional Application Output Response 9.2.2 Bidirectional Operation Load Bus Supply Power Supply CBYPASS 0.1µF V+ IN- - Reference Voltage Output OUT + REF + IN+ - GND Figure 29. Bidirectional Application Schematic 9.2.2.1 Design Requirements The device is a bidirectional, current-sense amplifier capable of measuring currents through a resistive shunt in two directions. This bidirectional monitoring is common in applications that include charging and discharging operations where the current flow-through resistor can change directions. 9.2.2.2 Detailed Design Procedure The ability to measure this current flowing in both directions is enabled by applying a voltage to the REF pin, as shown in Figure 29. The voltage applied to REF (VREF) sets the output state that corresponds to the zero-input level state. The output then responds by increasing above VREF for positive differential signals (relative to the IN– pin) and responds by decreasing below VREF for negative differential signals. This reference voltage applied to the REF pin can be set anywhere between 0 V to V+. For bidirectional applications, VREF is typically set at midscale for equal signal range in both current directions. In some cases, however, VREF is set at a voltage other than mid-scale when the bidirectional current and corresponding output signal do not need to be symmetrical. 20 Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 INA199 www.ti.com SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 Typical Applications (continued) Output Voltage (1 V/div) 9.2.2.3 Application Curve VOUT VREF 0V Time (500 µs/div) C002 Figure 30. Bidirectional Application Output Response Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 21 INA199 SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 www.ti.com 10 Power Supply Recommendations The input circuitry of the INA199 can accurately measure beyond its power-supply voltage, V+. For example, the V+ power supply can be 5 V, whereas the load power-supply voltage can be as high as 26 V. However, the output voltage range of the OUT pin is limited by the voltages on the power-supply pin. Also, the INA199 can withstand the full input signal range up to 26-V range in the input pins, regardless of whether the device has power applied or not. 11 Layout 11.1 Layout Guidelines • • Connect the input pins to the sensing resistor using a kelvin or 4-wire connection. This connection technique ensures that only the current-sensing resistor impedance is detected between the input pins. Poor routing of the current-sensing resistor commonly results in additional resistance present between the input pins. Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can cause significant measurement errors. Place the power-supply bypass capacitor as close as possible to the supply and ground pins. TI recommends using a bypass capacitor with a value of 0.1 μF. Additional decoupling capacitance can be added to compensate for noisy or high-impedance power supplies. 11.2 Layout Example Output Signal Trace IN- IN+ GND V+ REF OUT VIA to Power or Ground Plane VIA to Ground Plane Supply Voltage Supply Bypass Capacitor Figure 31. Recommended Layout 22 Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 INA199 www.ti.com SBOS469E – APRIL 2009 – REVISED DECEMBER 2015 12 Device and Documentation Support 12.1 Documentation Support 12.1.1 Related Documentation For related documentation see the following: • INA199A1-A3EVM User's Guide, SBOU085 • TIDA-00302 Transient Robustness for Current Shunt Monitor, TIDU473 12.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 12.3 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 12.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 12.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA199 23 PACKAGE OPTION ADDENDUM www.ti.com 7-Jul-2015 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) INA199A1DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 OBG INA199A1DCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 OBG INA199A1RSWR ACTIVE UQFN RSW 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 NSJ INA199A1RSWT ACTIVE UQFN RSW 10 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 NSJ INA199A2DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 OBH INA199A2DCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 OBH INA199A2RSWR ACTIVE UQFN RSW 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 NTJ INA199A2RSWT ACTIVE UQFN RSW 10 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 NTJ INA199A3DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 OBI INA199A3DCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 OBI INA199A3RSWR ACTIVE UQFN RSW 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 NUJ INA199A3RSWT ACTIVE UQFN RSW 10 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 NUJ INA199B1DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEB INA199B1DCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEB INA199B1RSWR ACTIVE UQFN RSW 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 SHV INA199B1RSWT ACTIVE UQFN RSW 10 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 SHV INA199B2DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEG Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com Orderable Device 7-Jul-2015 Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) INA199B2DCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEG INA199B2RSWR ACTIVE UQFN RSW 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 SHW INA199B2RSWT ACTIVE UQFN RSW 10 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 SHW INA199B3DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SHE INA199B3DCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SHE INA199B3RSWR ACTIVE UQFN RSW 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 SHX INA199B3RSWT ACTIVE UQFN RSW 10 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 SHX (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Addendum-Page 2 Samples PACKAGE OPTION ADDENDUM www.ti.com 7-Jul-2015 (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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Addendum-Page 3 PACKAGE MATERIALS INFORMATION www.ti.com 29-Jun-2015 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant INA199A1DCKR SC70 DCK 6 3000 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA199A1DCKR SC70 DCK 6 3000 180.0 8.4 2.41 2.41 1.2 4.0 8.0 Q3 INA199A1DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199A1DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199A1DCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA199A1RSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199A1RSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199A2DCKR SC70 DCK 6 3000 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA199A2DCKR SC70 DCK 6 3000 180.0 8.4 2.47 2.3 1.25 4.0 8.0 Q3 INA199A2DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199A2DCKT SC70 DCK 6 250 180.0 8.4 2.47 2.3 1.25 4.0 8.0 Q3 INA199A2DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199A2DCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA199A2RSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199A2RSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199A3DCKR SC70 DCK 6 3000 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA199A3DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199A3DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 29-Jun-2015 Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant INA199A3DCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA199A3RSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199A3RSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199B1DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199B1DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199B1RSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199B1RSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199B2DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199B2DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199B2RSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199B2RSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199B3DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199B3DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199B3RSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199B3RSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) INA199A1DCKR SC70 DCK 6 3000 195.0 200.0 45.0 INA199A1DCKR SC70 DCK 6 3000 202.0 201.0 28.0 Pack Materials-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 29-Jun-2015 Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) INA199A1DCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA199A1DCKT SC70 DCK 6 250 180.0 180.0 18.0 INA199A1DCKT SC70 DCK 6 250 195.0 200.0 45.0 INA199A1RSWR UQFN RSW 10 3000 203.0 203.0 35.0 INA199A1RSWT UQFN RSW 10 250 203.0 203.0 35.0 INA199A2DCKR SC70 DCK 6 3000 195.0 200.0 45.0 INA199A2DCKR SC70 DCK 6 3000 223.0 270.0 35.0 INA199A2DCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA199A2DCKT SC70 DCK 6 250 223.0 270.0 35.0 INA199A2DCKT SC70 DCK 6 250 180.0 180.0 18.0 INA199A2DCKT SC70 DCK 6 250 195.0 200.0 45.0 INA199A2RSWR UQFN RSW 10 3000 203.0 203.0 35.0 INA199A2RSWT UQFN RSW 10 250 203.0 203.0 35.0 INA199A3DCKR SC70 DCK 6 3000 195.0 200.0 45.0 INA199A3DCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA199A3DCKT SC70 DCK 6 250 180.0 180.0 18.0 INA199A3DCKT SC70 DCK 6 250 195.0 200.0 45.0 INA199A3RSWR UQFN RSW 10 3000 203.0 203.0 35.0 INA199A3RSWT UQFN RSW 10 250 203.0 203.0 35.0 INA199B1DCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA199B1DCKT SC70 DCK 6 250 180.0 180.0 18.0 INA199B1RSWR UQFN RSW 10 3000 203.0 203.0 35.0 INA199B1RSWT UQFN RSW 10 250 203.0 203.0 35.0 INA199B2DCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA199B2DCKT SC70 DCK 6 250 180.0 180.0 18.0 INA199B2RSWR UQFN RSW 10 3000 203.0 203.0 35.0 INA199B2RSWT UQFN RSW 10 250 203.0 203.0 35.0 INA199B3DCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA199B3DCKT SC70 DCK 6 250 180.0 180.0 18.0 INA199B3RSWR UQFN RSW 10 3000 203.0 203.0 35.0 INA199B3RSWT UQFN RSW 10 250 203.0 203.0 35.0 Pack Materials-Page 3 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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