DMN3016LSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT Product Summary Features and Benefits Description • • • • • • This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it Mechanical Data ideal for high efficiency power management applications. • • V(BR)DSS RDS(ON) max 30V 12mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V ID max TA = 25°C 10.3 A 9.3 A Applications • • • • • • Backlighting Power Management Functions DC-DC Converters • Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.076 grams (approximate) D SO-8 Pin1 S D S D S D G D Top View Pin Configuration Top View G S Equivalent Circuit Ordering Information (Note 4) Part Number DMN3016LSS-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 N3016LS N3016LS YY WW YY WW 1 4 Chengdu A/T Site DMN3016LSS Document number: DS36937 Rev.2 - 2 1 4 = Manufacturer’s Marking N3016LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) Shanghai A/T Site 1 of 6 www.diodes.com July 2014 © Diodes Incorporated DMN3016LSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT Continuous Drain Current (Note 6) VGS = 10V Steady State t<10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Value 30 ±20 10.3 8.3 ID 13.4 10.6 A ID 9.3 7.3 A A 12.0 9.5 2.5 80 22 25 A A A mJ Value 1.5 82 48 2.0 60 37 6.4 -55 to 150 Units W °C/W °C/W W °C/W °C/W °C/W °C ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Units V V IS IDM IAS EAS A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Steady State t<10s RθJA Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Case Operating and Storage Temperature Range RθJA RθJC TJ, TSTG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS(ON) VSD — 8 12 0.7 2.5 12 16 1.0 V Static Drain-Source On-Resistance 1.3 — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 12A VGS = 4.5V, ID = 10A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf Trr Qrr — — — — — — — — — — — — — — 1415 119 82 2.6 11.3 25.1 3.5 3.6 4.8 16.5 26.1 5.6 8.5 7.0 — — — 3.2 — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 15V, ID = 12A ns VDD = 15V, VGS = 10V, RL = 1.25Ω, RG = 3Ω, ns nC IF = 12A, di/dt = 500A/µs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. UIS in production with L = 0.1mH, starting TA = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN3016LSS Document number: DS36937 Rev.2 - 2 2 of 6 www.diodes.com July 2014 © Diodes Incorporated DMN3016LSS 30 30 VGS = 10V VGS = 3.0V VDS = 5.0V VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 4.0V VGS = 3.5V 20 15 10 20 15 10 TA = 150°C 5 VGS = 2.5V 5 TA = 125°C 2 0.02 VGS = 4.5V 0.01 VGS = 10V 0 5 10 15 20 25 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.03 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 4.5V ID = 5A 1.4 VGS = 10V ID = 10A 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMN3016LSS Document number: DS36937 Rev.2 - 2 3 of 6 www.diodes.com 4 0.03 VGS = 4.5V 0.025 TA = 150°C 0.02 TA = 125°C TA = 85°C 0.015 TA = 25°C 0.01 TA = -55°C 0.005 0 30 1.8 1.2 TA = 25°C 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 0 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.6 TA = 85°C TA = -55°C VGS = 2.2V 00 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT 25 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.024 0.02 VGS = 4.5V ID = 5A 0.016 VGS = 10V ID = 10A 0.012 0.008 0.004 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( °C) Figure 6 On-Resistance Variation with Temperature July 2014 © Diodes Incorporated 30 2.5 25 IS, SOURCE CURRENT (A) V GS(th), GATE THRESHOLD VOLTAGE (V) 3 2 ID = 1mA 1.5 ID = 250µA 1 0.5 15 TA = 25°C 10 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( °C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 10000 0 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10000 TA = 150°C f = 1MHz CT, JUNCTION CAPACITANCE (pF) IDSS, DRAIN LEAKAGE CURRENT (µA) 20 5 0 -50 1000 TA = 125°C 100 TA = 85°C 10 TA = 25°C 1 0.1 0 Ciss 1000 Coss 100 C rss 10 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Drain-Source Leakage Current vs. Voltage 10 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 20 100 RDS(on) Limited 9 8 ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT DMN3016LSS 7 VDS = 15V ID = 12A 6 5 4 3 DC PW = 10s PW = 1s 1 PW = 100ms PW = 10ms PW = 1ms 0.1 TJ(max) = 150°C TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 2 1 0 10 0 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN3016LSS Document number: DS36937 Rev.2 - 2 25 4 of 6 www.diodes.com 0.01 0.1 PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 July 2014 © Diodes Incorporated DMN3016LSS r(t), TRANSIENT THERMAL RESISTANCE D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 82°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 0.254 NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT 1 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 θ 0° 8° All Dimensions in mm D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y DMN3016LSS Document number: DS36937 Rev.2 - 2 5 of 6 www.diodes.com July 2014 © Diodes Incorporated DMN3016LSS IMPORTANT NOTICE NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2014, Diodes Incorporated www.diodes.com DMN3016LSS Document number: DS36937 Rev.2 - 2 6 of 6 www.diodes.com July 2014 © Diodes Incorporated