MA-COM MADS-001318-1197HP Gaas flip chip schottky barrier diode Datasheet

MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
GaAs Flip Chip
Schottky Barrier Diodes
Rev. V8
Features






Low Series Resistance
Low Capacitance
High Cutoff Frequency
Silicon Nitride Passivation
Polyimide Scratch Protection
Designed for Easy Circuit Insertion
MA4E1317
Description and Applications
The MA4E1317 single, MA4E1318 anti-parallel pair,
MA4E1319-1 reverse tee, MA4E1319-2 series tee
and MA4E2160 unconnected anti-parallel pair are
gallium arsenide flip chip Schottky barrier diodes.
These devices are fabricated on OMCVD epitaxial
wafers using a process designed for high device
uniformity and extremely low parasitics. The diodes
are fully passivated with silicon nitride and have an
additional layer of polyimide for scratch protection.
The protective coatings prevent damage to the
junction during automated or manual handling. The
flip chip configuration is suitable for pick and place
insertion. The high cutoff frequency of these diodes
allows use through millimeter wave frequencies.
Typical applications include single and double
balanced mixers in PCN transceivers and radios,
police radar detectors, and automotive radar
detectors.
The devices can be used through
80 GHz.
MA4E1318
MA4E1319-1
The MA4E1318 anti-parallel pair is designed for use
in sub harmonically pumped mixers. Close
matching of the diode characteristics results in high
LO suppression at the RF input.
MA4E1319-2
Ordering Information
Part Number
Package
MA4E1317
100 piece Die in Carrier
MADS-001317-1278HP
3000 piece Pocket Tape on Reel
MA4E1318
100 piece Die in Carrier
MADS-001318-1197HP
3000 piece Pocket Tape on Reel
MA4E1319-1
100 piece Die in Carrier
MA4E1319-2
100 piece Die in Carrier
MA4E2160
100 piece Die in Carrier
MA4E2160
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
GaAs Flip Chip
Schottky Barrier Diodes
Rev. V8
Electrical Specifications @ +25°C
Parameters and Test Conditions
Symbol
Units
Junction Capacitance at 0 V at 1 MHz
Cj
Total Capacitance at 0 V at 1 MHz1
MA4E1318
Min.
Typ.
Max.
Min.
Typ.
Max.
pF
-
.020
-
-
.0203
-
Ct
pF
.030
.045
.060
.0303
.0453
.0603
Junction Capacitance Difference
DCj
pF
-
-
-
-
.005
.010
Series Resistance at +10 mA2
Rs
Ohms
-
4
7
-
4
7
Forward Voltage at +1 mA
Vf1
Volts
.60
.70
.80
.60
.70
.80
Forward Voltage Difference at +1 mA
DVf
Volts
-
-
-
-
.005
.010
Reverse Breakdown Voltage at -10 µA
Vbr
Volts
4.5
7
-
-
-
-
SSB Noise Figure
NF
dB
-
6.54
-
-
6.54
-
Parameters and Test Conditions
Symbol
Units
MA4E1319-1 or -2
Min.
Typ.
3
MA4E2160
Max.
Min.
Typ.
Max.
-
-
-
.0203
Junction Capacitance at 0 V at 1 MHz
Cj
pF
-
.020
Total Capacitance at 0 V at 1 MHz1
Ct
pF
.0303
.0453
.0603
.0603
.0303
.0453
Junction Capacitance Difference
DCj
pF
-
.005
.010
.010
-
.005
Rs
Ohms
-
4
7
7
-
4
Forward Voltage at +1 mA
Vf1
Volts
.60
.70
.80
.80
.60
.70
Forward Voltage Difference at +1 mA
DVf
Volts
-
.005
.010
.010
-
.005
Reverse Breakdown Voltage at -10 µA
Vbr
Volts
4.5
7
-
-
4.5
7
-
-
-
6.54
Series Resistance at +10 mA
SSB Noise Figure
1.
2.
3.
4.
MA4E1317
2
NF
dB
-
6.5
4
Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms.
Capacitance for the MA4E1318, MA4E2160, MA4E1319-1 or -2 is per Schottky diode.
Measured at a LO frequency of 9.375 GHz, with an IF frequency of 300 MHz, LO drive level is +6 dBm for a single Schottky junction. The
IF noise figure contribution (1.5 dB) is included.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
GaAs Flip Chip
Schottky Barrier Diodes
Rev. V8
Parameter
Absolute Maximum
Operating Temperature
-65°C to +125°C
Storage Temperature
-65°C to +150°C
Incident LO Power
+20 dBm
Incident RF Power
+20 dBm
Mounting Temperature
+235°C for 10 seconds
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6. MACOM does not recommend sustained operation near these
survivability limits.
Forward Current vs. Temperature
100
Forward Current (mA)
Absolute Maximum Ratings5,6
+25°C
-50°C
+125°C
80
60
40
20
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Forward Voltage (V)
Mounting Techniques
Handling Procedures
These chips were designed to be inserted onto
hard or soft substrates with the junction side down.
They can be mounted with conductive epoxy or
with a low temperature solder preform. The die
can also be assembled with the junction side up,
and wire or ribbon bonds made to the pads.
The following precautions should be observed to
avoid damaging these chips:
Solder Die Attach:
Solder which does not scavenge gold, such as
Indalloy # 2, is recommended. Sn-Pb based
solders are not recommended due to solder
embrittlement. Do not expose die to a temperature
greater than 235°C, or greater than 200°C for
longer than 10 seconds. No more than three
seconds of scrubbing should be required for
attachment.
Epoxy Die Attach:
Assembly can be preheated to 125 - 150°C. Use a
minimum amount of epoxy. Cure epoxy as per
manufacturer’s schedule. For extended cure times,
temperatures should be kept below 200°C.
Cleanliness:
The chips should be handled in a clean
environment. Do not attempt to clean die after
installation.
Static Sensitivity:
Schottky barrier diodes are ESD sensitive and can
be damaged by static electricity. Proper ESD
techniques should be used when handling these
Class 0 devices.
General Handling:
The protective polymer coating on the active areas
of these die provides scratch protection, particularly
for the metal air bridge which contacts the anode.
Die can be handled with tweezers or vacuum
pickups and are suitable for use with automatic
pick-and-place equipment.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
GaAs Flip Chip
Schottky Barrier Diodes
Rev. V8
Flip Chip Outline Drawings
B
F
E
A
C
MA4E1317
Case Style 1278
G
D
DIM.
H
A
B
C
D
E
F
G
H
G SQ
TYP
F
INCHES
MIN.
MAX.
0.013
0.026
0.008
0.007
0.016
0.004
0.006
0.0075
0.014
0.027
0.009
0.008
0.017
0.006
0.007
0.0085
MILLIMETERS
MIN.
MAX.
0.330
0.660
0.203
0.177
0.406
0.101
0.152
0.190
0.335
0.685
0.228
0.203
0.430
0.152
0.177
0.216
TYP
E TYP
B
MA4E1318
Case Style 1197
D
TYP
A
DIM.
C
A
B
C
D
E
F
G
INCHES
MIN.
MAX.
.025
.012
.006
.018
.0075
.003
.004
.027
.015
.008
.020
.0085
.005
.006
MILLIMETERS
MIN.
MAX.
.64
.32
.15
.45
.190
.08
.10
.69
.37
.20
.50
.216
.13
.15
ALIGNMENT INDICATOR (2 PLCS)
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
GaAs Flip Chip
Schottky Barrier Diodes
Rev. V8
Flip Chip Outline Drawings
F TYP
G SQ.
TYP
E TYP
MA4E1319-1
Case Style 1199
B
D
A
C
DIM.
A
B
C
D
E
F
G
INCHES
MIN.
MAX.
.027
.018
.0075
.013
.003
.003
.004
.029
.020
.0085
.015
.005
.005
.006
MILLIMETERS
MIN.
MAX.
.68
.45
.190
.33
.08
.08
.10
.73
.50
.216
.38
.13
.13
.15
ALIGNMENT INDICATOR (3 PLCS)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
GaAs Flip Chip
Schottky Barrier Diodes
Rev. V8
Flip Chip Outline Drawings
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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