IXYY8N90C3 IXYP8N90C3 900V XPTTM IGBT GenX3TM VCES = IC110 = VCE(sat) tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 900V 8A 3.0V 130ns TO-252 (IXYY) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 900 900 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 20 8 48 A A A IA EAS TC = 25°C TC = 25°C 4 15 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 30 Clamped Inductive Load ICM = 16 @VCE VCES A PC TC = 25°C 125 W -55 ... +175 175 -55 ... +175 °C °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-220 300 260 °C °C 1.13/10 Nm/lb.in. 0.35 3.00 g g E C (Tab) TO-220 (IXYP) G CE G = Gate E = Emitter C (Tab) C = Collector Tab = Collector Features Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of Vce(sat) Avalanche Rated International Standard Packages Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 950 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V V 6.0 10 150 A μA 100 nA TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 8A, VGE = 15V, Note 1 TJ = 150C © 2014 IXYS CORPORATION, All Rights Reserved V 2.15 2.75 3.00 V V High Power Density Low Gate Drive Requirement Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100399B(12/14) IXYY8N90C3 IXYP8N90C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 8A, VCE = 10V, Note 1 2.9 TO-252 AA Outline 4.8 S pF pF pF Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz 400 24 7.8 Qg(on) Qge Qgc IC = 8A, VGE = 15V, VCE = 0.5 • VCES 13.3 3.4 5.8 nC nC nC 16 20 0.46 40 130 0.18 ns ns mJ ns ns mJ td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS Inductive load, TJ = 25°C IC = 8A, VGE = 15V VCE = 0.5 • VCES, RG = 30 Note 2 Inductive load, TJ = 125°C IC = 8A, VGE = 15V VCE = 0.5 • VCES, RG = 30 Note 2 TO-252 TO-220 0.50 17 22 1.00 75 163 0.22 ns ns mJ ns ns mJ 0.35 0.50 1.20 °C/W °C/W °C/W 1. Gate 2. Collector 3. Emitter 4. Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC TO-220 Outline Notes: 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Pins: 1 - Gate 3 - Emitter 2 - Collector IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYY8N90C3 IXYP8N90C3 Fig. 1. Output Characteristics @ TJ = 25ºC 16 VGE = 15V 13V 12V 14 40 VGE = 15V 30 10 I C - Amperes I C - Amperes 35 11V 12 10V 8 9V 6 4 13V 25 12V 20 11V 15 10V 8V 10 9V 2 5 7V 0 0 0.5 16 1 1.5 2 2.5 3 8V 7V 0 3.5 0 5 10 20 25 VCE - Volts Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.0 VGE = 15V 13V 12V 11V 30 VGE = 15V 1.8 I C = 16A 10 VCE(sat) - Normalized 12 10V 8 9V 6 4 1.6 1.4 I C = 8A 1.2 1.0 8V 0.8 2 7V 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 I C = 4A 0.6 -50 4.5 -25 0 VCE - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 7 Fig. 6. Input Admittance 20 18 TJ = 25ºC 6 16 14 4 I C - Amperes 5 VCE - Volts 15 VCE - Volts 14 I C - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25ºC 45 I C = 16A 3 12 10 8 TJ = 150ºC 25ºC 6 - 40ºC 8A 4 2 2 4A 1 0 8 9 10 11 12 VGE - Volts © 2014 IXYS CORPORATION, All Rights Reserved 13 14 15 3.5 4.5 5.5 6.5 7.5 VGE - Volts 8.5 9.5 10.5 11.5 IXYY8N90C3 IXYP8N90C3 Fig. 7. Transconductance Fig. 8. Gate Charge 8 16 TJ = - 40ºC 7 5 I C = 8A I G = 10mA 12 25ºC VGE - Volts g f s - Siemens 6 VCE = 450V 14 150ºC 4 3 10 8 6 2 4 1 2 0 0 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 I C - Amperes 6 8 10 12 14 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 18 1,000 Cies 14 12 100 I C - Amperes Capacitance - PicoFarads 16 Coes 10 10 8 6 Cres f = 1 MHz 1 4 TJ = 150ºC 2 RG = 30Ω dv / dt < 10V / ns 0 0 5 10 15 20 VCE - Volts 10 25 30 35 40 200 300 400 Fig. 11. Maximum Transient Thermal Impedance 500 600 700 800 900 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance aaaa 3 Z(th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYY8N90C3 IXYP8N90C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Eoff Eon - --0.35 4 VCE = 450V 3 0.3 2 ---2.0 RG = 30ΩVGE = 15V 0.30 0.25 1.2 0.20 0.8 I C = 8A TJ = 25ºC 0.2 1 0.1 30 60 90 120 150 180 210 240 270 0.15 0.4 0.10 0 300 0.0 8 9 10 11 RG - Ohms Eoff 0.35 Eon 1.2 0.20 0.8 t f i - Nanoseconds 0.25 VCE = 450V 200 I C = 8A 160 0.10 120 120 80 100 0.4 40 0.0 125 0 40 30 60 90 120 200 tfi td(off) - - - - VCE = 450V 50 TJ = 25ºC 40 60 40 14 I C - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 15 16 t f i - Nanoseconds t f i - Nanoseconds 100 13 0 300 td(off) - - - - 100 VCE = 450V 90 I C = 8A 160 80 140 70 120 60 100 50 80 30 60 20 40 40 I C = 16A 30 25 50 75 TJ - Degrees Centigrade 100 20 125 t d(off) - Nanoseconds 60 12 180 t d(off) - Nanoseconds 70 120 11 270 RG = 30Ω, VGE = 15V 80 TJ = 125ºC 10 240 110 tfi 200 90 RG = 30Ω, VGE = 15V 9 210 220 100 8 180 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 80 150 RG - Ohms TJ - Degrees Centigrade 140 160 I C = 16A 0.15 75 240 80 I C = 8A 160 16 t d(off) - Nanoseconds 1.6 I C = 16A td(off) - - - - TJ = 125ºC, VGE = 15V 200 Eon - MilliJoules E off - MilliJoules VCE = 450V 180 15 280 tfi 240 2.0 50 14 280 2.4 RG = 30ΩVGE = 15V 25 13 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance ---- 0.30 12 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 0.40 1.6 TJ = 125ºC E on - MilliJoules 0.4 Eon VCE = 450V E on - MilliJoules I C = 16A Eoff - MilliJoules 2.4 Eoff TJ = 125ºC , VGE = 15V 0.5 0.40 5 Eoff - MilliJoules 0.6 IXYY8N90C3 IXYP8N90C3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 200 tri 70 100 td(on) - - - - I C = 8A 80 40 40 20 0 90 120 150 180 210 240 270 t r i - Nanoseconds t r i - Nanoseconds 60 70 VCE = 450V 50 17.5 TJ = 125ºC 40 17.0 30 16.5 TJ = 25ºC 20 16.0 10 15.5 15.0 8 9 10 11 12 13 14 15 16 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature tri 18.0 0 0 300 RG - Ohms 80 td(on) - - - - t d(on) - Nanoseconds 120 t d(on) - Nanoseconds I C = 16A 60 tri RG = 30Ω, VGE = 15V 80 VCE = 450V 30 18.5 60 TJ = 125ºC, VGE = 15V 160 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current td(on) - - - - 18.5 18.0 RG = 30Ω, VGE = 15V 17.5 50 17.0 I C = 16A 40 16.5 30 16.0 I C = 8A 20 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 450V 60 15.5 10 25 50 75 100 15.0 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_8N90C3(1D) 10-20-11