FastIRFET™ IRFH4255DPbF HEXFET® Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max (@VGS = 4.5V) 4.60 2.10 m Qg (typical) 10 23 nC ID (@TC = 25°C) 30 30 A Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Control and synchronous MOSFETs in one package Low charge control MOSFET (10nC typical) Low RDSON synchronous MOSFET (<2.10m) Intrinsic Schottky Diode with Low Forward Voltage on Q2 RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Base part number Package Type IRFH4255DPbF Dual PQFN 5mm x 6mm Benefits Increased power density Lower switching losses results in Lower conduction losses Lower Switching Losses Environmentally friendlier Increased reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH4255DTRPbF Absolute Maximum Ratings IDM Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V (Source Bonding Technology Limited) Pulsed Drain Current PD @TC = 25°C PD @TC = 70°C Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range VGS ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25°C Q1 Max. Q2 Max. ± 20 64 105 51 84 Units V A 30 30 120 420 31 20 38 24 W 0.25 0.30 W/°C -55 to + 150 °C Thermal Resistance Parameter RJC (Bottom) Junction-to-Case Junction-to-Case RJC (Top) Junction-to-Ambient RJA Junction-to-Ambient RJA (<10s) Q1 Max. 4.0 20 34 Q2 Max. 3.3 12 31 24 19 Units °C/W Notes through are on page 12 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 14, 2014 IRFH4255DPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage VGS(th)/TJ Gate Threshold Voltage Coefficient IDSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage gfs Forward Transconductance Qg Total Gate Charge Qgs1 Pre-Vth Gate-to-Source Charge Qgs2 Post-Vth Gate-to-Source Charge Qgd Gate-to-Drain Charge Qgodr Gate Charge Overdrive Qsw Switch Charge (Qgs2 + Qgd) Qoss Output Charge RG Gate Resistance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 2 www.irf.com © 2014 International Rectifier Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Min. Typ. 25 ––– 25 ––– ––– 22 ––– 23 ––– 2.50 ––– 1.20 ––– 3.70 ––– 1.65 1.1 1.6 1.1 1.6 ––– -5.7 ––– -5.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 131 ––– 182 ––– ––– 10 ––– 23 ––– 2.5 ––– 4.5 ––– 1.6 ––– 2.3 ––– 3.8 ––– 8.4 ––– 2.1 ––– 7.8 ––– 5.4 ––– 10.7 ––– 10 ––– 23 ––– 2.4 ––– 1.5 ––– 10 ––– 10 ––– 61 ––– 43 ––– 13 ––– 27 ––– 15 ––– 26 ––– 1314 ––– 2877 ––– 365 ––– 907 ––– 92 ––– 234 Max. Units ––– V ––– ––– mV/°C ––– 3.20 1.50 m 4.60 2.10 2.1 V 2.1 ––– mV/°C ––– 1.0 µA 250 100 100 nA -100 -100 ––– S ––– 15 35 ––– ––– ––– ––– nC ––– ––– ––– ––– ––– ––– ––– nC ––– ––– ––– ––– ––– ––– ––– ns ––– ––– ––– ––– ––– ––– ––– pF ––– ––– ––– Submit Datasheet Feedback Conditions VGS = 0V, ID = 250µA VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA Reference to 25°C, ID = 10mA VGS = 10V, ID = 30A VGS = 10V, ID = 30A VGS = 4.5V, ID = 30A VGS = 4.5V, ID = 30A Q1: VDS = VGS, ID = 35µA Q2: VDS = VGS, ID = 100µA Q1: VDS = VGS, ID = 35µA Q2: VDS = VGS, ID = 1mA VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V VGS = 20V VGS = 20V VGS = -20V VGS = -20V VDS = 10V, ID = 30A VDS = 10V, ID = 30A Q1 VDS = 13V VGS = 4.5V, ID = 30A Q2 VDS = 13V VGS = 4.5V, ID = 30A VDS = 16V, VGS = 0V Q1 VDS = 13V VGS = 4.5V ID = 30A, Rg = 1.8 Q2 VDS = 13V VGS = 4.5V ID = 30A, Rg = 1.8 VGS = 0V VDS = 13V ƒ = 1.0MHz April 14, 2014 IRFH4255DPbF Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 3 www.irf.com © 2014 International Rectifier Typ. ––– Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– 16 26 13 34 Q1 Max. 61 Q2 Max. 364 Units mJ Max. Units Conditions 30 A MOSFET symbol 30 showing the 120 A integral reverse p-n junction diode. 420 1.0 V TJ = 25°C, IS = 30A, VGS = 0V 0.75 TJ = 25°C, IS = 30A, VGS = 0V ––– ns Q1 TJ = 25°C, IF = 30A ––– VDD = 13V, di/dt = 235A/µs ––– nC Q2 TJ = 25°C, IF = 30A VDD = 13V, di/dt = 270A/µs ––– Submit Datasheet Feedback April 14, 2014 IRFH4255DPbF Q2 - Synchronous FET Q1 - Control FET 1000 1000 100 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.1V 2.9V 2.7V 2.5V 10 1 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 BOTTOM 10 2.5V 60µs PULSE WIDTH 60µs PULSE WIDTH 2.5V Tj = 25°C Tj = 25°C 0.1 1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 100 1000 100 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.1V 2.9V 2.7V 2.5V 10 2.5V TOP ID, Drain-to-Source Current (A) TOP BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.1V 2.9V 2.7V 2.5V 100 2.5V 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 150°C Tj = 150°C 10 1 0.1 1 10 0.1 100 1 10 100 VDS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics Fig 4. Typical Output Characteristics 1000 ID, Drain-to-Source Current(A) 1000 ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 1000 ID, Drain-to-Source Current (A) 1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 T J = 150°C 10 T J = 25°C 1 100 TJ = 150°C 10 TJ = 25°C VDS = 15V VDS = 15V 60µs PULSE WIDTH 60µs PULSE WIDTH 1.0 0.1 1.5 2.0 2.5 3.0 3.5 4.0 VGS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics 4 VGS 10V 5.0V 4.5V 3.5V 3.1V 2.9V 2.7V 2.5V www.irf.com © 2014 International Rectifier 1 2 3 4 VGS, Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics Submit Datasheet Feedback April 14, 2014 IRFH4255DPbF IRFH4255DPbF Q2 - Synchronous FET Q1 - Control FET 100000 100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Crss = C gd Coss = Cds + Cgd Coss = Cds + Cgd C, Capacitance (pF) C, Capacitance (pF) 10000 Ciss Coss 1000 Crss 10000 Ciss Coss 1000 100 Crss 10 100 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage VGS, Gate-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) 12.0 VDS= 20V VDS= 13V 10.0 8.0 6.0 4.0 2.0 0.0 ID= 30A 12.0 VDS = 20V VDS= 13V 10.0 8.0 6.0 4.0 2.0 0.0 0 5 10 15 20 25 30 0 QG, Total Gate Charge (nC) 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 100µsec Limited by package 1 1msec 10msec Tc = 25°C Tj = 150°C Single Pulse DC 0.01 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area www.irf.com 20 30 40 50 60 Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage © 2014 International Rectifier ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 10 QG, Total Gate Charge (nC) Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage 5 100 14.0 ID= 30A 0.1 10 Fig 8. Typical Capacitance vs. Drain-to-Source Voltage 14.0 10 1 VDS , Drain-to-Source Voltage (V) OPERATION IN THIS AREA LIMITED BY R 100 DS (on) 100µsec 10 Limited by Package 1msec 1 10msec 0.1 DC Tc = 25°C Tj = 150°C Single Pulse 0.01 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 12. Maximum Safe Operating Area Submit Datasheet Feedback April 14, 2014 IRFH4255DPbF Q2 - Synchronous FET Q1 - Control FET 1.8 ID = 30A VGS = 4.5V 1.4 RDS(on) , Drain-to-Source On Resistance (Normalized) RDS(on) , Drain-to-Source On Resistance (Normalized) 1.6 1.2 1.0 0.8 0.6 ID = 30A VGS = 4.5V 1.6 1.4 1.2 1.0 0.8 0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 T J , Junction Temperature (°C) Fig 13. Normalized On-Resistance vs. Temperature Fig 14. Normalized On-Resistance vs. Temperature 1000 ISD, Reverse Drain Current (A) 1000 ISD, Reverse Drain Current (A) 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 100 T J = 150°C 10 T J = 25°C 100 TJ = 150°C TJ = 25°C 10 VGS = 0V VGS = 0V 1.0 1.0 0.4 0.5 0.6 0.7 0.8 0.9 0.2 1.0 10 ID = 30A 8 6 T J = 125°C 2 T J = 25°C 0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 17. Typical On-Resistance vs. Gate Voltage 6 www.irf.com 0.8 1.0 1.2 Fig 16. Typical Source-Drain Diode Forward Voltage RDS(on), Drain-to -Source On Resistance (m) RDS(on), Drain-to -Source On Resistance (m ) Fig 15. Typical Source-Drain Diode Forward Voltage 2 0.6 VSD , Source-to-Drain Voltage (V) VSD, Source-to-Drain Voltage (V) 4 0.4 © 2014 International Rectifier 5.0 ID = 30A 4.0 3.0 TJ = 125°C 2.0 1.0 TJ = 25°C 0.0 0 5 10 15 20 VGS, Gate -to -Source Voltage (V) Fig 18. Typical On-Resistance vs. Gate Voltage Submit Datasheet Feedback April 14, 2014 IRFH4255DPbF Q2 - Synchronous FET Q1 - Control FET 70 120 Limited By Package Limited By Package 100 50 ID, Drain Current (A) ID, Drain Current (A) 60 40 30 20 80 60 40 20 10 0 25 50 75 100 125 0 150 25 TC , Case Temperature (°C) 125 150 2.5 VGS(th), Gate threshold Voltage (V) 2.0 1.8 ID = 35µA 1.6 1.4 1.2 2.0 1.5 ID = 1.0mA 1.0 0.5 0.0 1.0 -75 -50 -25 0 25 50 -75 -50 -25 75 100 125 150 0 25 50 75 100 125 150 TJ , Temperature ( °C ) T J , Temperature ( °C ) Fig 21. Threshold Voltage vs. Temperature Fig 22. Threshold Voltage vs. Temperature 1600 EAS , Single Pulse Avalanche Energy (mJ) 250 EAS , Single Pulse Avalanche Energy (mJ) 100 Fig 20. Maximum Drain Current vs. Case Temperature 2.2 ID TOP 7.7A 12A BOTTOM 30A 200 150 100 50 ID 7.9A 16A BOTTOM 60A 1400 TOP 1200 1000 800 600 400 200 0 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 23. Maximum Avalanche Energy vs. Drain Current 77 75 TC , Case Temperature (°C) Fig 19. Maximum Drain Current vs. Case Temperature VGS(th) , Gate threshold Voltage (V) 50 www.irf.com www.irf.com © 2013 2014 International International Rectifier Rectifier © 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Fig 24. Maximum Avalanche Energy vs. Drain Current Submit Datasheet Feedback April July14, 31,2014 2013 IRFH4255DPbF Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) 100 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 25. Typical Avalanche Current vs. Pulse Width (Q1) Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) 100 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 26. Typical Avalanche Current vs. Pulse Width (Q2) Thermal Response ( Z thJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Q1) 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 14, 2014 IRFH4255DPbF Thermal Response ( Z thJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 0.01 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Q2) 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 14, 2014 IRFH4255DPbF Fig 29. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A I AS 0.01 Fig 30a. Unclamped Inductive Test Circuit Fig 30b. Unclamped Inductive Waveforms Fig 31a. Switching Time Test Circuit Fig 31b. Switching Time Waveforms Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 32a. Gate Charge Test Circuit 10 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 32b. Gate Charge Waveform Submit Datasheet Feedback April 14, 2014 IRFH4255DPbF Dual PQFN 5x6 Outline “H” Package Details C SEATING PLANE D 4 A INDEX AREA (D/2xE/2) B D2 PIN#1 ID L1 A1 R0.30 E1 E2 e E 7x L2 8x b 8x K D1 1.15 0.48 1.21 TOP VIEW SIDE VIEW 1.08 D im e n s io n T a b le Th Sy ic k n m b ess ol A A1 b D E e D1 E1 D2 E2 K L1 L2 V : V e r y T h in M IN IM U M 0 .8 0 0 .0 0 0 .3 0 2 .4 2 4 .4 1 0 .7 8 4 .0 1 0 .2 0 1 .6 7 0 .4 0 NOTE N O M IN A L M A X IM U M 1 .0 0 0 .9 0 0 .0 5 0 .0 2 0 .5 0 0 .4 0 6 .0 0 B S C 5 .0 0 B S C 1 .2 7 B S C 2 .5 7 2 .6 7 4 .5 6 4 .6 6 1 .0 3 0 .9 3 4 .2 6 4 .1 6 ----1 .7 7 0 .5 0 0.94 BOTTOM VIEW 6 1 .8 7 0 .6 0 Dual PQFN 5x6 Outline “H” Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 14, 2014 IRFH4255DPbF Dual PQFN 5x6 Outline Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Qualification Information† Industrial (per JEDEC JESD47F †† guidelines ) Qualification level DUAL PQFN 5mm x 6mm Moisture Sensitivity Level Yes RoHS Compliant † †† MSL1 (per JEDEC J-STD-020D††) Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, Q1: L = 0.14mH, RG = 50, IAS = 30A; Q2: L = 0.20mH, RG = 50, IAS = 60A. Pulse width ≤ 400µs; duty cycle ≤ 2%. R is measured at TJ approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Calculated continuous current based on maximum allowable junction temperature. Current is limited to Q1 = 30A & Q2 = 30A by source bonding technology. Pulsed drain current is limited to 120A by source bonding technology. Revision History Date 01/27/2014 Comments Update the MSL level from MSL2 to MSL1, on page 1 & 12. 04/08/2014 Removed “redundant” information of IDSS Q1 & Q2 on page 2. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 14, 2014