INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP60R125P6，IIPP60R125P6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.125Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pulsed 87 A PD Total Dissipation @TC=25℃ 219 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 0.57 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP60R125P6，IIPP60R125P6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA 600 VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.96mA 3.5 RDS(on) Drain-Source On-Resistance VGS=10V; ID=11.6A IGSS Gate-Source Leakage Current VGS=20V; VDS=0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IF=14.5A; VGS = 0V isc website：www.iscsemi.cn CONDITIONS 2 MIN TYP MAX UNIT V 0.9 4.5 V 0.125 Ω 0.1 μA 2 μA V isc & iscsemi is registered trademark