ISC BD947 Isc silicon npn power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BD943/945/947
DESCRIPTION
·DC Current Gain: hFE= 85(Min)@ IC= 500mA
·Complement to Type BD944/946/948
APPLICATIONS
·Designed for use in audio output stages and general
purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
VALUE
BD943
22
BD945
32
BD947
45
BD943
22
BD945
32
BD947
45
UNIT
V
V
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
1
A
PC
Collector Power Dissipation
@ TC=25℃
40
W
TJ
Junction Temperature
150
℃
-65~150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
Rth j-a
Thermal Resistance,Junction to Ambient
isc website:www.iscsemi.com
1
MAX
UNIT
3.12
℃/W
70
℃/W
isc & iscsemi is registered trademark
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BD943/945/947
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD943
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD945
VBE(on)
ICBO
ICEO
Collector-Emitter
Saturation Voltage
Base-Emitter
On Voltage
BD943/945
IC= 30mA ; IB= 0
32
UNIT
V
45
IC= 2A; IB= 0.2A
0.5
BD947
IC= 3A; IB= 0.3A
0.7
BD943/945
IC= 2A; VCE= 1V
1.1
BD947
IC= 3A; VCE= 1V
1.3
VCB= VCBOmax; IE= 0
VCB= VCBOmax; IE= 0,TJ=150℃
0.05
1.0
mA
0.1
mA
0.2
mA
V
BD943
VCE= 15V; IB= 0
BD945
VCE= 20V; IB= 0
BD947
VCE= 25V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 10mA ; VCE= 5V
25
hFE-2
DC Current Gain
IC= 500mA ; VCE= 1V
85
BD943/945
hFE-3
MAX
V
Collector Cutoff Current
Collector
Cutoff Current
TYP.
22
BD947
VCE(sat)
MIN
DC Current Gain
475
50
IC= 2A ; VCE= 1V
BD947
40
hFE-4
DC Current Gain--Only For BD947
IC= 3A ; VCE= 1V
30
fT
Current-Gain—Bandwidth Product
IC= 250mA ; VCE= 1V
3
isc website:www.iscsemi.com
2
MHz
isc & iscsemi is registered trademark
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