BUZ 385 SIPMOS ® Power Transistor • N channel • Enhancement mode • FREDFET Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 385 500 V 9A 0.8 Ω TO-218 AA C67078-A3210-A2 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage RGS = 20 kΩ Values Unit 500 V 500 ID Continuous drain current TC = 25 °C A 9 IDpuls Pulsed drain current TC = 25 °C 36 Gate source voltage VGS Power dissipation Ptot TC = 25 °C ± 20 V W 125 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤1 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 150 / 56 1 07/96 BUZ 385 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 500 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3.5 4 IDSS µA VDS = 500 V, VGS = 0 V, Tj = 25 °C - 20 250 VDS = 500 V, VGS = 0 V, Tj = 125 °C - 100 1000 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 6.5 A Semiconductor Group nA - 2 0.6 0.8 07/96 BUZ 385 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 6.5 A Input capacitance 2.7 pF - 3800 4900 - 250 400 - 100 170 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 6.7 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 2.8 A RGS = 50 Ω Rise time - 50 75 - 80 120 - 330 430 - 110 140 tr VDD = 30 V, VGS = 10 V, ID = 2.8 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 2.8 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 2.8 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 385 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 36 V 1.3 1.7 trr ns - 180 250 Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 9 - VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 21 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 0.65 1.2 07/96 BUZ 385 Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 130 10 W A 110 Ptot 8 ID 100 7 90 80 6 70 5 60 4 50 3 40 30 2 20 1 10 0 0 0 20 40 60 80 100 120 °C 0 160 20 40 60 80 100 120 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C °C 160 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 10 2 K/W t = 26.0µs p A ID ZthJC 100 µs =V DS /I D 10 1 10 0 10 -1 R DS (o n) 1 ms D = 0.50 0.20 10 10 ms 0 0.10 0.05 10 -2 0.02 0.01 DC single pulse 10 -1 10 0 10 1 10 2 V 10 10 3 10 VDS Semiconductor Group -3 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 385 Typ. output characteristics ID = ƒ(VDS) Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS parameter: tp = 80 µs 20 2.6 l Ptot = 125W kj i h g Ω f A 16 14 a 4.0 b 4.5 c 5.0 d 5.5 RDS (on) 10 c 8 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 d e 2.0 1.6 1.4 1.2 1.0 f g h i j k l 0.8 k 10.0 6 c 1.8 d e 6.0 12 b 2.2 e VGS [V] ID a l 20.0 0.6 b 4 0.4 VGS [V] = a 2 a 4.0 0.2 0 0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l 10.0 20.0 0.0 4 8 12 16 20 V 28 0 2 4 6 8 10 12 14 16 A 19 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max ID 18 10 A S gfs 14 8 7 12 6 10 5 8 4 6 3 4 2 2 0 0 1 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0 2 4 6 8 10 12 A ID 07/96 16 BUZ 385 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 6.5 A, VGS = 10 V 2.4 4.6 Ω V 98% 4.0 2.0 RDS (on) VGS(th) typ 3.6 1.8 3.2 1.6 2.8 1.4 2.4 1.2 98% 2.0 typ 1.6 1.0 0.8 2% 1.2 0.6 0.4 0.8 0.2 0.4 0.0 -60 0.0 -60 -20 20 60 100 °C 160 -20 20 60 100 °C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 Ciss nF A IF C 10 0 10 1 Coss 10 -1 10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 385 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 14 A Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 16 600 V V 580 VGS V(BR)DSS570 12 560 0,2 VDS max 550 0,8 VDS max 10 540 530 8 520 510 6 500 490 4 480 470 2 460 450 -60 0 -20 20 60 100 °C 160 Tj Semiconductor Group 8 0 40 80 120 160 nC Q Gate 07/96 220 BUZ 385 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96