BWTECH MS99N45 Dual n channel 60-v (d-s) mosfet Datasheet

MS99N45
Dual N Channel 60-V (D-S) MOSFET
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
• RoHS compliant package
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Packing & Order Information
3,000/Reel
Graphic symbol
Publication Order Number: [MS99N45]
© Bruckewell Technology Corporation Rev. A -2014
MS99N45
Dual N Channel 60-V (D-S) MOSFET
Publication Order Number: [MS99N45]
© Bruckewell Technology Corporation Rev. A -2014
MS99N45
Dual N Channel 60-V (D-S) MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
a
3.6
A
a
3.1
A
20
A
ID
Continuous Drain Current (TA =25°C)
Continuous Drain Current (TA =70°C)
IDM
IS
PD
TJ/TSTG
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
1.7
A
a
2.1
W
Power Dissipation (TA =70°C)
a
1.3
W
Operating Junction and Storage Temperature
1.3
°C
Power Dissipation (TA =25°C)
Thermal Resistance Ratings
Symbol
Parameter
RθJA
Maximum
a
62.5
a
110
Maximum Junction-to-Ambient (t <= 10 sec)
Maximum Junction-to-Ambient (Steady-State)
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Static
Symbol
Parameter
Test Conditions
VGS(th)
Gate-Source Threshold Voltage
VDS = VGS, ID = 250μA
IGSS
Gate-Body Leakage
VDS = 0 V , VGS = ±20 V
IDSS
Zero Gate Voltage Drain Current
ID(on)
On-State Drain Current
r
DS(on)
Drain-Source On-Resistance
Min
Typ.
Max.
1
V
±100
VDS = 48 V , VGS = 0 V
1
VDS = 48 V , VGS = 0 V , TJ= 55°C
25
VDS = 5 V, VGs = 10 V
Units
8
nA
uA
A
VGS = 10 V, ID = 2.9 A
89
VGS = 4.5 V, ID = 2.7 A
104
mΩ
gfs
Forward Tranconductance
VGS = 15 V, ID = 2.9 A
10
S
VSD
Diode Forward Voltage
IS = 0.9 A , VGS = 0 V
0.78
V
Publication Order Number: [MS99N45]
© Bruckewell Technology Corporation Rev. A -2014
MS99N45
Dual N Channel 60-V (D-S) MOSFET
Dynamic
Symbol
Parameter
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
VDS = 30 V , ID = 2.9 A,
VGS = 4.5 V
ID = 2.9 A , RL = 10.4 Ω,
VGEN = 10 V , RGEN = 6 Ω
VDS = 30 V
VDS = 15 V
f = 1 MHz ,VGS = 0 V
Min
Typ.
Max.
Units
--
40
--
nC
--
1.2
--
nC
--
2.1
--
nC
--
3
--
ns
--
6
--
ns
--
17
--
ns
--
5
--
ns
--
297
--
pF
--
40
--
pF
--
28
--
pF
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Publication Order Number: [MS99N45]
© Bruckewell Technology Corporation Rev. A -2014
MS99N45
Dual N Channel 60-V (D-S) MOSFET
■Typical
Electrical Characteristics
FIG.1-ON-RESISTANCE VS. DRAIN
CURRENT
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON-RESISTANCE VS GATE-TO-SOURCE
FIG.4-DRAIN-TO-SOURCE FORWARD VOLTAGE
VOLTAGE
FIG.5-OUTPUT CHARACTERISTICS
Publication Order Number: [MS99N45]
FIG.6-CAPACITANCE
© Bruckewell Technology Corporation Rev. A -2014
MS99N45
Dual N Channel 60-V (D-S) MOSFET
■Typical Electrical Characteristics
FIG.7-GATE CHARGE
FIG.8-NORMALIZED ON-RESISTANCE VS
JUNCTION TEMPERATURE
FIG.9-SAFE OPERATIING AREA
FIG.10-SINGLE PULSE MAXIMUM POWER DISSIPATION
FIG.11-NORMALIZED THERMAL TRANSIENT JUNCTION TO AMBIENT
Publication Order Number: [MS99N45]
© Bruckewell Technology Corporation Rev. A -2014
MS99N45
Dual N Channel 60-V (D-S) MOSFET
Disclaimer
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may vary over time.
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Publication Order Number: [MS99N45]
© Bruckewell Technology Corporation Rev. A -2014
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