HDSEMI MUR820-28F-29 To-220 plastic-encapsulate diode Datasheet

MUR820(F) THRU MUR860(F)
HD TO84
TO-220 Plastic-Encapsulate Diodes
Super Fast Rectifier
Features
●Io
8A
ITO- 220 AC
TO- 220 AC
●VRRM
200V-600V
●High surge current capability
Applications
● Rectifier
Marking
1
● MUR8XX(F)
XX : From 20 To 60
1
2
1
Item
Symbol
Unit
2
2
MUR8-(F)
Test Conditions
20
40
60
200
400
600
Repetitive Peak Reverse Voltage
VRRM
V
Average Rectified Output Current
Io
A
60HZ Half-sine wave, Resistance
load, Tc(Fig.1)
8.0
IFSM
A
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
120
TJ
℃
-55~+150
TSTG
℃
-55 ~ +150
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
MUR8-(F)
Item
Peak Forward Voltage
Peak Reverse Current
Reverse Recovery Time
Thermal
Resistance(Typical) (Note1)
Typical Junction
Capacitance(Note2)
Symbol
Unit
VF
V
IRRM1
IRRM2
uA
Test Condition
IF =8.0A
V RM=VRRM
20
40
60
0.98
1.3
1.7
Ta =25℃
Ta =125℃
IF=0.5A IRM=1A
IRR=0.25A
10
500
Trr
ns
RθJ-A
℃/W
30
Cj
pF
150
50
NOTE1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
NOTE2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
High Diode Semiconductor
1
Typical Characteristics
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
IFSM(A)
IO(A)
FIG.1: FORWARD CURRENT DERATING CURVE
12
10
210
180
8.3ms Single Half Sine Wave
JEDEC Method
150
8
120
6
90
4
60
2
30
0
50
70
90
110
130
150
Tc(℃)
0
1
10
100
Number of Cycles
IR(uA)
IF(A)
FIG3:Instantaneous Forward Voltage
60
40
FIG.4:TYPICAL REVERSE CHARACTERISTICS
1000
20
100
MUR820(F)
10
Tj=125℃
10
5.0
Tj=100℃
MUR840(F)
1.0
1.0
MUR860(F)
Tj=25℃
0.1
0.5
0.2
0.1
0.01
0
Ta=25℃
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.2
2.0
20
40
60
80
2.4
VF(V)
100
Voltage(%)
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
t rr
IF
VR
IF
RL
t
0
IRR
IR
High Diode Semiconductor
2
TO- 220
TO- 220 AC
0.185(4.70)
0.175(4.44)
0.412(10.5)
MAX
0.113(2.87)
0.103(2.62)
0.055(1.40)
0.045(1.14)
0.270(6.86)
0.230(5.84)
Φ 0.154(3.91)
Φ 0.148(3.74)
0.594(15.1)
0.587(14.9)
1
2
0.16(4.06)
0.14(3.56)
0.025(0.64)
0.014(0.35)
0.037(0.94)
0.027(0.68)
0.56(14.22)
0.53(13.46)
0.11(2.79)
0.10(2.54)
0.210(5.34)
0.190(4.82)
Unit
inch ( mm )
ITO- 220 AC
JSHD
JSHD
High Diode Semiconductor
3
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