1/3 GM6718 NPN EPITAXIAL PLANAR TRANSISTOR Description The GM6718 is designed for general purpose medium power amplifier and switching. Package Dimensions REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Symbol Ratings Junction Temperature Parameter Tj +150 Unit Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 5 V Collector Current IC 1 A Total Power Dissipation PD 1 W Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO 100 - - V IC=100uA , IE=0 Test Conditions BVCEO 100 - - V IC=1mA. IB=0 BVEBO 5 - - V IE=10uA, IC=0 ICBO - - 100 nA VCB=80V *VCE(sat) - - 350 mV IC=350mA, IB=35mA *hfe1 80 - - VCE=1V, IC=50mA *hfe2 100 - 310 VCE=1V, IC=250mA *hfe3 20 - - Cob - - 20 pF 50 - - MHz fT VCE=1V, IC=500mA VCB=10V, f=1MHz VCE=10V, IC=50mA, f=100MHz *Pulse Test:Pulse width 380us,Duty Cycle 2% 2/3 Characteristics Curve 3/3 Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 886-3-597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165