POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6445141 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST SWITCHING THYRISTOR ATF743 FINAL SPECIFICATION Repetitive voltage up to Mean on-state current Surge current Turn-off time 2000 2595 36 70 V A kA µs mag 06 - ISSUE : 02 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 2000 V V RSM Non-repetitive peak reverse voltage 125 2100 V V DRM Repetitive peak off-state voltage 125 2000 V I RRM Repetitive peak reverse current V=VRRM 125 300 mA I DRM Repetitive peak off-state current V=VDRM 125 300 mA I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55°C, double side cooled 2595 A I T (AV) Mean on-state current 180° sin, 1 kHz, Th=55°C, double side cooled 2390 A I TSM CONDUCTING Surge on-state current, non repetitive sine wave, 10 ms I² t I² t without reverse voltage V On-state voltage On-state current = V r T 125 36 6480 x1E3 4000 A 125 2,02 kA A²s V T(TO) Threshold voltage 125 1,30 V T On-state slope resistance 125 0,180 mohm SWITCHING di/dt Critical rate of rise of on-state current, min From 75% VDRM up to 1200 A, gate 10V 5 ohm 125 500 A/µs dv/dt Critical rate of rise of off-state voltage, min Linear ramp up to 75% of VDRM 125 600 V/µs td Gate controlled delay time, typical VD=200V, gate source 20V, 10 ohm , tr=.5 µs 25 0,8 µs tq Circuit commutated turn-off time 125 70 µs 800 µC di/dt = dV/dt = Q rr Reverse recovery charge 60 A/µs, I= 1000 I = 2000 A 200 V/µs , up to 80% di/dt = 60 A/µs, I= 1000 I = 4000 A VR = 50 V A VDRM A 125 I rr Peak reverse recovery current 350 I H Holding current, typical VD=5V, gate open circuit 25 mA A I L Latching current, typical VD=12V, tp=30µs 25 mA GT Gate trigger voltage VD=5V 25 GATE V 3,5 V I GT Gate trigger current VD=5V 25 350 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0,25 V V FGM Peak gate voltage (forward) 25 30 V I FGM Peak gate current 25 10 A V RGM Peak gate voltage (reverse) 25 5 V P GM Peak gate power dissipation 25 150 W P G(AV) Average gate power dissipation 25 2 W R th(j-h) Thermal impedance, DC 11 °C/kW T j Operating junction temperature Pulse width 100 µs MOUNTING F Junction to heatsink, double side cooled Mounting force Mass -30 / 125 °C 35.0 / 40.0 kN 1700 tq code ORDERING INFORMATION : ATF743 S 20 U tq code standard specification VDRM&VRRM/100 D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs T 60 µs U 70 µs W 80 µs X 100µs Y 150µs g ATF743 FAST SWITCHING THYRISTOR FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation mag 06 - ISSUE : 02 SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARGE Tj = 125 °C 2500 4000 A 2000 Qrr [µC] 2000 A 1500 1000 A 1000 500 0 0 50 100 150 200 250 300 350 400 di/dt [A/µs] REVERSE RECOVERY CURRENT Tj = 125 °C 1400 4000 A 2000 A 1200 Irr [A] 1000 1000 A 800 600 400 200 0 0 50 100 150 200 250 300 350 400 di/dt [A/µs] ta = Irr / (di/dt) tb = trr - ta di/dt IF ta Softness (s factor) s = tb / ta Irr Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) tb Vr ATF743 FAST SWITCHING THYRISTOR FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation mag 06 - ISSUE : 02 ON-STATE CHARACTERISTIC Tj = 125 °C SURGE CHARACTERISTIC Tj = 125 °C 9000 40 8000 35 7000 30 On-state Current [A] 6000 ITSM [kA] 25 5000 20 4000 15 3000 10 2000 5 1000 0 0 0,6 1,1 1,6 2,1 On-state Voltage [V] 1 2,6 10 n° cycles TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 14 12 Zth j-h [°C/kW] 10 8 6 4 2 0 0,001 0,01 0,1 1 t[s] 10 100 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. Distributed by 100