MSP0315D -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-30V,ID =-15A RDS(ON) <54mΩ @ VGS=-10V RDS(ON) <82mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson Lead Free ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● High side switch for full bridge converter ● DC/DC converter for LCD display ● Power Management in Portable Equipment and BPS Marking and pin assignment PIN Configuration Schematic diagram TO-252-2L top view Package Marking and Ordering Information Device Marking MSP0315D Device MSP0315D Device Package TO-252-2L Reel Size Tape width - Quantity 2500PCS - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V ID -15 A ID (100℃) -10.5 A Pulsed Drain Current IDM -45 A Maximum Power Dissipation PD 2.5 W 0.4 W/℃ EAS 40 mJ TJ,TSTG -55 To 175 Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range MORE Semiconductor Company Limited http://www.moresemi.com ℃ 1/6 MSP0315D Thermal Characteristic (Note 2) Thermal Resistance, Junction-to-Case RθJC ℃/W 2.5 Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 - - V Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.0 -1. 5 -2.5 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-50A - 43 54 mΩ gFS VDS=-5V,ID=-1A - 5 - S - 782 - PF - 125 - PF Crss - 86 - PF Turn-on Delay Time td(on) - 9 - nS Turn-on Rise Time tr VDD=-15V, ID=-1A, - 10 - nS td(off) VGS=-10V,RGEN=3Ω - 38 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=-15V,VGS=0V, F=1.0MHz (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf - 23 - nS Total Gate Charge Qg - 11 - nC Gate-Source Charge Qgs - 2.1 - nC Gate-Drain Charge Qgd - 2.9 - nC - - -1.2 V VDS=-15V,ID=-1A,VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1.7A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition: Tj=25℃,VDD=-15V,VG=-10V,L=0.5mH,Rg=25Ω,IAS=-26A MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSP0315D Test Circuit Figure 1．Switching times test circuit for Resistive Figure 2. Gate charge test circuit load Figure 3．Test circuit for inductive load and diode recovery times Figure 5. Unclamped inductive waveform MORE Semiconductor Company Limited Figure 4. Unclamped Inductive load test circuit switching Figure 6.Switching time waveform http://www.moresemi.com 3/6 MSP0315D Typical Electrical and Thermal Characteristics (Curves) Figure 1.Output Characteristics Figure 2.Transfer Characteristics -ID/A -ID/A 25 25 TJ=125℃ -VGS=10,9,8,7,6,5V 20 20 15 15 25℃ -VGS=3V 10 10 5 5 -55℃ 0 2 4 6 8 10 0 12 -VDS/V Figure3.Capacitance variations 0.8 0.9 1.3 1.5 2 2.8 -VGS/V Figure4 .On-Resistance Variation with Temperature RDS(on)/m Ω C/PF Ciss 800 1.8 1.6 750 VGS=-10 V ID=-5.6A 1.4 600 1.2 450 1 300 Crss 0.6 Coss 150 0 0.2 5 10 15 20 25 -55 30 -VGS/V Figure5.Gate Threshold Variation with Temperatures -25 0 25 50 125 Tj/℃ Figure6.Breakdown Voltage Variation with temperatures Vth/V Vth/V 1.3 1.15 VDS=VGS ID=-250uA 1.2 1.1 1.1 1.05 1 1 0.8 0.95 0.7 0.9 0.6 0.85 -55 -25 0 25 50 125 Tj/℃ MORE Semiconductor Company Limited ID=-250uA -55 -25 0 http://www.moresemi.com 25 50 125 Tj/℃ 4/6 MSP0315D Figure7.Transconductance Variation With Current Drain Figure8.Body Diode Forward Voltage Variation with Source Current -IS/A (S) 20 12 10 10 8 6 4 2 1 0 5 10 15 20 ID/A 0 Figure9. Gate charge VS. Gate-source Voltage 0.4 0.6 0.7 0.9 1.1 1.3 -VSD/V Figure10.Maximum Safe Operating Area -ID/A -VGS/V 50 RDS(ON)Limit 10 12 VGS=-15V ID=-5.3A 10 100mS 10mS 1S 1 8 DC 6 0.1 4 2 VGS=-10V Single Pulse TA=25℃ 0.03 0 2 4 6 8 10 12 nC MORE Semiconductor Company Limited 0.1 http://www.moresemi.com 1 10 30 50 -VDS/V 5/6 MSP0315D TO-252 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.830 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 L2 2.900 TYP. 1.400 L3 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. MORE Semiconductor Company Limited 0.211 TYP. http://www.moresemi.com 6/6