CYStech Electronics Corp. Spec. No. : C014J3 Issued Date : 2018.05.03 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTB3D0N04J3 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package Symbol BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 40V 96.6A(silicon limit) 56A(package limit) 3.0 mΩ(typ) 3.5 mΩ(typ) Outline TO-252(DPAK) MTB3D0N04J3 G D S G：Gate D：Drain S：Source Ordering Information Device MTB3D0N04J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape& reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB3D0N04J3 CYStek Product Specification Spec. No. : C014J3 Issued Date : 2018.05.03 Revised Date : Page No. : 2/ 9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol VDS VGS Limits 40 ±20 96.6 68.3 56 18.4 14.7 386 90 800 100 50 2.5 1.6 -55~+175 Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V(silicon limit) (Note 5) ID Continuous Drain Current @TC=100°C, VGS=10V(silicon limit) (Note 5) Continuous Drain Current @TC=25°C, VGS=10V(package limit) (Note 5) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) IDSM Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) IDM Avalanche Current @ L=0.1mH IAS Single Pulse Avalanche Energy @ L=1mH, ID=40A, VDD=25V (Note 4) EAS TC=25°C (Note 1) PD TC=100°C (Note 1) Power Dissipation TA=25°C (Note 2) PDSM TA=70°C (Note 2) Operating Junction and Storage Temperature Tj, Tstg Unit V A mJ W °C Stress exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 2) Symbol RθJC RθJA Value 1.5 50 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. 3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. 100% tested by conditions of L=0.1mH, VGS=10V, IAS=50A, VDD=25V 5. Calculated continuous current based on maximum allowable junction temperature. Guaranteed by design, not subject to 100% production test. Current is limited to 56A by source bond technology. MTB3D0N04J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C014J3 Issued Date : 2018.05.03 Revised Date : Page No. : 3/ 9 Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS *RDS(ON) Min. Typ. Max. Unit Test Conditions 40 1 - 0.03 29 3.0 3.5 2.5 ±100 1 10 3.9 5.5 V V/°C V S nA VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=10A VGS=±20V, VDS=0V VDS =32V, VGS =0V VDS =32V, VGS =0V, Tj=85°C VGS =10V, ID=20A VGS =4.5V, ID=20A 89.5 15 17.8 29.8 34.2 166 68.6 4951 476 260 1.0 120 30 36 6436 620 338 - 0.79 23.3 18.4 86 1.2 - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *VSD *trr *Qrr - μA mΩ nC VDD=20V, ID=20A,VGS=10V ns VDD=20V, ID=20A, VGS=10V, RG=10Ω pF VGS=0V, VDS=25V, f=1MHz Ω f=1MHz A V ns nC IS=20A, VGS=0V VGS=0, IF=20A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint MTB3D0N04J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C014J3 Issued Date : 2018.05.03 Revised Date : Page No. : 4/ 9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V,9V,8V,7V,6V,5V 250 ID, Drain Current (A) BVDSS, Normalized Drain-Source Breakdown Voltage 300 200 4V 150 100 3.5V 50 1.2 1 0.8 0.6 ID=250μA, VGS=0V VGS=3V 0.4 0 0 1 2 3 4 VDS, Drain-Source Voltage(V) -75 -50 -25 5 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 9 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 10 8 7 VGS=4.5V 6 5 4 3 2 VGS=0V 1.0 Tj=25°C 0.8 0.6 Tj=150°C 0.4 VGS=10V 1 0.2 0 0.01 0.1 1 10 ID, Drain Current(A) 0 100 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 20 3.2 R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=20A 15 10 5 2.8 2.4 VGS=10V, ID=20A RDS(ON) @Tj=25°C : 3.0mΩ typ. 2.0 1.6 1.2 0.8 0.4 0.0 0 0 MTB3D0N04J3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C014J3 Issued Date : 2018.05.03 Revised Date : Page No. : 5/ 9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss Crss 1.4 1.2 1 ID=1mA 0.8 0.6 0.4 ID=250μA 0.2 100 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) -65 30 -35 -5 85 115 145 175 Gate Charge Characteristics 100 10 VDS=10V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 55 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 VDS=15V 1 0.1 Ta=25°C Pulsed 8 6 4 VDS=20V ID=20A 2 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 0 10 10 20 30 40 50 60 70 80 Qg, Total Gate Charge(nC) 90 100 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 120 RDSON Limited 100μs 1ms 100 10ms 100ms 10 1s DC TC=25°C, Tj=175°C VGS=10V, RθJC=1.5°C/W Single Pulse 1 ID, Maximum Drain Current(A) 1000 ID, Drain Current(A) 25 100 silicon limit 80 60 package limit 40 20 VGS=10V, RθJC=1.5°C/W 0 0.1 0.1 MTB3D0N04J3 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C014J3 Issued Date : 2018.05.03 Revised Date : Page No. : 6/ 9 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Typical Transfer Characteristics 3000 300 250 TJ(MAX) =175°C TC=25°C RθJC=1.5°C/W 2400 2100 200 Power (W) ID, Drain Current(A) 2700 VDS=10V 150 100 1800 1500 1200 900 600 50 300 0 0 1 2 3 4 VGS, Gate-Source Voltage(V) 5 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.5°C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTB3D0N04J3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C014J3 Issued Date : 2018.05.03 Revised Date : Page No. : 7/ 9 Reel Dimension Carrier Tape Dimension MTB3D0N04J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C014J3 Issued Date : 2018.05.03 Revised Date : Page No. : 8/ 9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB3D0N04J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C014J3 Issued Date : 2018.05.03 Revised Date : Page No. : 9/ 9 TO-252 Dimension Marking: 4 Device Name B3D0 N04 Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB3D0N04J3 CYStek Product Specification