Lyontek LY61L6416GL-10LLE 64k x 16 bit high speed cmos sram Datasheet

®
LY61L6416
64K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.0
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Rev. 1.3
Rev. 1.4
Rev. 1.5
Rev. 1.6
Rev. 1.7
Rev. 1.8
Rev. 1.9
Rev. 2.0
Description
Initial Issue
Deleted Icc1 Spec.
Revised Truth Table
Deleted Data Retention Waveform(2)(UB & LB controlled)
Revised the typo in Page 1
Added PKG Type : 48-ball 6mm x 8mm TFBGA
Revised Test Condition of ISB1/IDR
Added I Grade Spec.
Revised VTERM to VT1 and VT2
Added -20ns Spec.
Added LL Spec.
Revised Test Condition of ISB
Revised FEATURES & ORDERING INFORMATION
Lead free and green package available to Green package
available
Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS
Added packing type in ORDERING INFORMATION
Revised PACKAGE OUTLINE DIMENSION in page 11
Revised ORDERING INFORMATION in page 12
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
Issue Date
Jul.25.2004
Sep.21.2004
Jun.20.2005
Feb.13.2006
Jun.13.2007
Feb.4.2008
Mar.31.2008
Aug.7.2008
Apr.17.2009
May.6.2010
Aug.25.2010
®
LY61L6416
64K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.0
FEATURES
GENERAL DESCRIPTION
„ Fast access time : 8/10/12/15/20ns
„ Low power consumption:
Operating current : 115/105/95/85/70mA (TYP.)
Standby current :
0.6mA (TYP.)
100µA( (MAX. for 20ns LL version)
„ Single 3.3V power supply
„ All inputs and outputs TTL compatible
„ Fully static operation
„ Tri-state output
„ Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
„ Data retention voltage : 2.0V (MIN.)
„ Green package available
„ Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
The LY61L6416 is a 1,048,576-bit low power CMOS
static random access memory organized as 65,536
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY61L6416 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY61L6416 operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
PRODUCT FAMILY
Product
Operating
Family
Temperature
0 ~ 70℃
LY61L6416
0 ~ 70℃
LY61L6416
0 ~ 70℃
LY61L6416(LL)
-20 ~ 80℃
LY61L6416(E)
-20 ~ 80℃
LY61L6416(E)
LY61L6416(LLE) -20 ~ 80℃
-40 ~ 85℃
LY61L6416(I)
-40 ~ 85℃
LY61L6416(I)
-40 ~ 85℃
LY61L6416(LLI)
Vcc Range
Speed
3.15 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
3.15 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
3.15 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
8/10ns
12/15/20ns
20ns
8/10ns
12/15/20ns
20ns
8/10ns
12/15/20ns
20ns
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
0.6mA(TYP.)
115/105mA
0.6mA(TYP.)
95/85/70mA
100µA(MAX.)
70mA
0.6mA(TYP.)
115/105mA
0.6mA(TYP.)
95/85/70mA
100µA(MAX.)
70mA
0.6mA(TYP.)
115/105mA
0.6mA(TYP.)
95/85/70mA
100µA(MAX.)
70mA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY61L6416
64K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.0
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0-A15
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
CE#
WE#
OE#
LB#
UB#
SYMBOL
DESCRIPTION
A0 - A15
Address Inputs
DQ0 – DQ15 Data Inputs/Outputs
DECODER
I/O DATA
CIRCUIT
64Kx16
MEMORY ARRAY
CE#
Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
LB#
Lower Byte Control
UB#
Upper Byte Control
VCC
Power Supply
VSS
Ground
COLUMN I/O
CONTROL
CIRCUIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY61L6416
64K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.0
PIN CONFIGURATION
A4
1
44
A5
A3
2
43
A6
A2
3
42
A7
A1
4
41
OE#
A0
5
40
UB#
6
39
LB#
7
38
DQ15
DQ1
8
37
DQ14
DQ2
9
36
DQ13
DQ3
10
35
DQ12
Vcc
11
34
Vss
Vss
12
33
Vcc
DQ4
13
32
DQ11
DQ5
14
31
DQ10
DQ6
15
30
DQ7
16
WE#
LY61L6416
CE#
DQ0
A
LB# OE#
A0
A1
B
DQ8 UB#
A3
A4
CE# DQ0
DQ9
C
DQ9 DQ10 A5
A6
DQ1 DQ2
29
DQ8
D
Vss DQ11 NC
A7
DQ3 Vcc
17
28
NC
E
Vcc DQ12 NC
NC
DQ4 Vss
A15
18
27
A8
A14
19
26
A9
F
DQ14 DQ13 A14
A15 DQ5 DQ6
A13
20
25
A10
G
DQ15 NC
A12
A13 WE# DQ7
A12
21
24
A11
H
A10
NC
22
23
NC
NC
A8
A9
1
2
3
4
TFBGA
TSOP II
A2
NC
A11
NC
5
6
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on VCC relative to VSS
Voltage on any other pin relative to VSS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
VT1
VT2
TA
TSTG
PD
IOUT
RATING
-0.5 to 4.6
-0.5 to VCC+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY61L6416
64K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.0
TRUTH TABLE
MODE
CE#
OE#
H
L
L
L
L
L
L
L
L
X
H
H
L
L
L
X
X
X
Standby
Output Disable
Read
Write
Note:
WE# LB#
X
H
H
H
H
H
L
L
L
UB#
X
L
X
L
H
L
L
H
L
X
X
L
H
L
L
H
L
L
I/O OPERATION
DQ0-DQ7
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
DOUT
High – Z
DOUT
High – Z
DOUT
DOUT
DIN
High – Z
DIN
High – Z
DIN
DIN
SUPPLY CURRENT
ISB,ISB1
ICC
ICC
ICC
H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Supply Voltage
VCC
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
VIH
*2
VIL
ILI
Average Operating
Power supply Current
Standby Power
Supply Current
TEST CONDITION
-8/-10
-12/-15/-20
*1
ILO
VOH
VOL
ICC
VCC ≧ VIN ≧ VSS
VCC ≧ VOUT ≧ VSS,
Output Disabled
IOH = -4mA
IOL = 8mA
-8
-10
-12
-15
-20
Cycle time = Min.
CE# = VIL , II/O = 0mA
Other pins at VIH or VIL
ISB
CE# = VIH, other pins at VIH or VIL
ISB1
8/10/12/15/20
CE# ≧VCC - 0.2V
Others at 0.2V or VCC - 0.2V 20LL
MIN.
3.15
3.0
2.0
- 0.3
-1
TYP.
3.3
3.3
-
*4
MAX. UNIT
3.6
V
3.6
V
VCC+0.3 V
0.8
V
1
µA
-1
-
1
µA
2.4
-
115
105
95
85
70
3
0.6
20
0.4
150
120
100
90
75
10
*5
3
6
100*
V
V
mA
mA
mA
mA
mA
mA
mA
µA
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at VCC = VCC(TYP.) and TA = 25℃
5. 1mA for special request
6. 50µA for special request
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN.
-
Note : These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
MAX
6
8
UNIT
pF
pF
®
LY61L6416
64K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.0
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to VCC - 0.2V
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -4mA/8mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
SYM. LY61L6416 LY61L6416 LY61L6416 LY61L6416 LY61L6416 UNIT
-8
-10
-12
-15
-20
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
ns
Read Cycle Time
8
10
12
15
20
tRC
ns
Address Access Time
8
10
12
15
20
tAA
ns
Chip Enable Access Time
8
10
12
15
20
tACE
ns
Output Enable Access Time
4
5
6
7
8
tOE
ns
Chip Enable to Output in Low-Z
2
2
3
4
4
tCLZ*
ns
Output Enable to Output in Low-Z tOLZ*
0
0
0
0
0
ns
Chip Disable to Output in High-Z
4
5
6
7
8
tCHZ* ns
Output Disable to Output in High-Z tOHZ*
4
5
6
7
8
ns
Output Hold from Address Change tOH
3
3
3
3
3
ns
LB#, UB# Access Time
4
5
6
7
8
tBA
ns
LB#, UB# to High-Z Output
4
5
6
7
8
tBHZ*
ns
LB#, UB# to Low-Z Output
0
0
0
0
0
tBLZ*
PARAMETER
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
LB#, UB# Valid to End of Write
SYM. LY61L6416 LY61L6416 LY61L6416 LY61L6416 LY61L6416 UNIT
-8
-10
-12
-15
-20
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
8
10
12
15
20
ns
tWC
6.5
8
10
12
15
ns
tAW
6.5
8
10
12
15
ns
tCW
0
0
0
0
0
ns
tAS
6.5
8
9
10
12
ns
tWP
0
0
0
0
0
ns
tWR
5
6
7
8
9
ns
tDW
0
0
0
0
0
ns
tDH
2
3
4
5
ns
tOW* 1.5
5
6
7
8
9
ns
tWHZ* 6.5
8
10
12
15
ns
tBW
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
5
®
LY61L6416
64K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.0
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
tRC
Address
tAA
Dout
tOH
Previous Data Valid
Data Valid
READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5)
tRC
Address
tAA
CE#
tACE
LB#,UB#
tBA
OE#
tOE
tOH
tOHZ
tBHZ
tCHZ
tOLZ
tBLZ
tCLZ
Dout
High-Z
Data Valid
High-Z
Notes :
1.WE#is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low, LB# or UB# = low.
3.Address must be valid prior to or coincident with CE# = low, LB# or UB# = low transition; otherwise tAA is the limiting parameter.
4.tCLZ, tBLZ, tOLZ, tCHZ, tBHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tBHZ is less than tBLZ, tOHZ is less than tOLZ.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
6
®
LY61L6416
64K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.0
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)
tWC
Address
tAW
CE#
tCW
tBW
LB#,UB#
tAS
tWP
tWR
WE#
tWHZ
Dout
TOW
High-Z
(4)
tDW
Din
(4)
tDH
Data Valid
WRITE CYCLE 2 (CE# Controlled) (1,2,5,6)
tWC
Address
tAW
CE#
tAS
tWR
tCW
tBW
LB#,UB#
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
tDH
Data Valid
Din
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
7
®
LY61L6416
64K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.0
WRITE CYCLE 3 (LB#,UB# Controlled) (1,2,5,6)
tWC
Address
tAW
tWR
CE#
tAS
tCW
tBW
LB#,UB#
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
tDH
Data Valid
Din
Notes :
1.WE#,CE#, LB#, UB# must be high during all address transitions.
2.A write occurs during the overlap of a low CE#, low WE#, LB# or UB# = low.
3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be
placed on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the CE#, LB#, UB# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance
state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
8
®
LY61L6416
64K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.0
DATA RETENTION CHARACTERISTICS
PARAMETER
VCC for Data Retention
SYMBOL
TEST CONDITION
VDR CE# ≧ VCC - 0.2V
Data Retention Current
Chip Disable to Data
Retention Time
Recovery Time
tRC* = Read Cycle Time
MIN.
2.0
8/10/12/15/20
-
IDR
VCC = 2.0V
CE# ≧ VCC - 0.2V
others at 0.2V or VCC - 0.2V 20LL
tCDR
See Data Retention
Waveforms (below)
tR
DATA RETENTION WAVEFORM
VDR ≧ 2.0V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
CE#
VIH
tR
CE# ≧ Vcc-0.2V
VIH
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
9
TYP.
0.4
MAX. UNIT
3.6
V
2
mA
-
10
50
µA
0
-
-
ns
tRC*
-
-
ns
®
LY61L6416
64K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.0
PACKAGE OUTLINE DIMENSION
θ
44-pin 400mil TSOP-Ⅱ Package Outline Dimension
SYMBOLS
A
A1
A2
b
c
D
E
E1
e
L
ZD
y
Θ
DIMENSIONS IN MILLMETERS
MIN.
NOM.
MAX.
1.20
0.05
0.10
0.15
0.95
1.00
1.05
0.30
0.45
0.12
0.21
18.212
18.415
18.618
11.506
11.760
12.014
9.957
10.160
10.363
0.800
0.40
0.50
0.60
0.805
0.076
o
o
o
3
6
0
DIMENSIONS IN MILS
MIN.
NOM.
MAX.
47.2
2.0
3.9
5.9
37.4
39.4
41.3
11.8
17.7
4.7
8.3
717
725
733
453
463
473
392
400
408
31.5
15.7
19.7
23.6
31.7
3
o
o
o
0
3
6
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
10
®
LY61L6416
Rev. 2.0
64K X 16 BIT HIGH SPEED CMOS SRAM
48-ball 6mm × 8mm TFBGA Package Outline Dimension
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
11
®
LY61L6416
Rev. 2.0
64K X 16 BIT HIGH SPEED CMOS SRAM
ORDERING INFORMATION
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
12
®
LY61L6416
Rev. 2.0
64K X 16 BIT HIGH SPEED CMOS SRAM
THIS PAGE IS LEFT BLANK INTENTIONALLY.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
13
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