ETC AD408M326VLB-5 Low voltage operation is more suitable to be used on battery backup, portable electronic Datasheet

ASCEND
Semiconductor
4Mx4 EDO
Data sheet
Rev.1
Page 1
AD 40 4M 4 2 V S A – 5
Ascend
Semiconductor
EDO/FPM
D-RAMBUS
DDRSDRAM
DDRSGRAM
SGRAM
SDRAM
:
:
:
:
:
:
40
41
42
43
46
48
Density
16M : 16 Mega Bits
8M : 8 Mega Bits
4M : 4 Mega Bits
2M : 2 Mega Bits
1M : 1 Mega Bit
Min Cycle Time ( Max Freq.)
-5 : 5ns ( 200MHz )
-6 : 6ns ( 167MHz )
-7 : 7ns ( 143MHz )
-75 : 7.5ns ( 133MHz )
-8 : 8ns ( 125MHz )
-10 : 10ns ( 100MHz )
Organization
4: x4
8 : x8
9 : x9
16 : x16
18 : x18
32 : x32
Refresh
1 : 1K 8 : 8K
2 : 2K 6 :16K
4 : 4K
EDO : -5 (50 ns)
-6 (60 ns)
Revision
A : 1st B : 2nd
C : 3rd D :4th
Interface
V: 3.3V
R: 2.5V
Package
C: CSP B: uBGA
T: TSOP Q: TQFP
P: PQFP ( QFP )
L: LQFP S: SOJ
Rev.1
Page 2
Description
The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access
mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup, portable electronic application. lt is packaged in JEDEC standard 26/24-pin plastic SOJ or TSOP(II).
Features
• Single 3.3V( ± 10 %) only power supply
• High speed tRAC acess time: 50/60ns
• Low power dissipation
- Active mode :
432/396 mW (Mas)
- Standby mode: 0.54 mW (Mas)
• Extended - data - out(EDO) page mode access
• I/O level: CMOS level (Vcc = 3.3V)
• 2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version)
• 4 refresh modesh:
- RAS only refresh
- CAS - before - RAS refresh
- Hidden refresh
- Self-refresh(S-version)
Rev.1
Page 3
Pin Configuration
26/24-PIN 300mil Plastic SOJ
VCC
DQ1
1
4
5
NC
6
A10
8
A0
A1
9
A2
11
A3
12
13
VCC
25
24
DQ4
DQ3
21
CAS
OE
A9
19
23
22
18
17
16
15
10
VSS
14
VCC
1
26
VSS
DQ1
2
3
25
DQ4
DQ3
DQ2
WE
RAS
4
5
NC
6
A8
A10
8
A7
A6
A5
A0
A1
9
A2
11
A4
A3
12
13
VCC
VSS
10
AD404M42VT
2
3
26
AD404M42VS
DQ2
WE
RAS
26/24-PIN 300mil Plastic TSOP (ll)
24
21
CAS
OE
A9
19
A8
18
17
16
15
14
A7
A6
23
22
Pin Description
Pin Name
A0-A10
Function
Address inputs
- Row address
- Column address
- Refresh address
DQ1~DQ4
Data-in / data-out
RAS
Row address strobe
CAS
Column address strobe
WE
Write enable
OE
Output enable
Vcc
Power (+ 3.3V)
Vss
Ground
A0-A10
A0-A10
A0-A10
Rev.1
Page 4
A5
A4
VSS
Block Diagram
WE
CONTROL
LOGIC
CAS
DATA-IN BUFFER
DQ1
.
.
DQ4
NO. 2 CLOCK
GENERATOR
DATA-OUT
BUFFER
OE
COLUMN
ADDRESS
BUFFERS (11)
COLUMN
DECODER
A0
A1
A2
A3
2048
REFRESH
CONTROLLER
A4
SENSE AMPLIFIERS
I/O GATING
A5
A6
REFRESH
COUNTER
2048x4
A7
A8
RAS
2048
ROW
ADDRESS
BUFFERS (11)
ROW
DECODER
A9
A10
2048x2048x4
MEMORY
ARRAY
Vcc
NO. 1 CLOCK
GENERATOR
Vss
Rev.1
Page 5
TRUTH TABLE
ADDRESSES
FUNCTION
RAS
CAS
WE
OE
ROW
COL
STANDBY
H
H→X
X
X
X
X
READ
L
L
H
L
ROW
COL
Data-Out
WRITE: (EARLY WRITE )
L
L
L
X
ROW
COL
Data-ln
READ WRITE
L
L
H→L
L→H
ROW
COL
Data-Out,Data-ln
1st Cycle
L
H→L
H
L
ROW
COL
Data-Out
2nd Cycle
L
H→L
H
L
n/a
COL
Data-Out
EDO-PAGE
1st Cycle
MODE WRITE
2nd Cycle
L
H→L
L
X
ROW
COL
Data-In
L
H→L
L
X
n/a
COL
Data-In
1st Cycle
L
H→L
H→L
L→H
ROW
COL
Data-Out, Data-In
2nd Cycle
L
H→L
H→L
L→H
n/a
COL
Data-Out, Data-In
READ
L→H→L
L
H
L
ROW
COL
Data-Out
WRITE
L→H→L
L
L
X
ROW
COL
Data-In
L
H
X
X
ROW
n/a
High-Z
H→L
L
H
X
X
X
High-Z
EDO-PAGEMODE READ
EDOPAGE-MODE
READ-WRITE
HIDDEN
REFRESH
RAS-ONLY REFRESH
CBR REFRESH
DQS
Notes
High-Z
1
Notes: 1. EARLY WRITE only.
Rev.1
Page 6
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
VT
-0.5 to + 4.6
V
Supply voltage relative to Vss
VCC
-0.5 to + 4.6
V
Short circuit output current
IOUT
50
mA
PD
1.0
W
Operating temperature
TOPT
0 to + 70
°C
Storage temperature
TSTG
-55 to + 125
°C
Voltage on any pin relative to Vss
Power dissipation
Recommended DC Operating Conditions
Parameter/Condition
Symbol
3.3 Volt Version
Min
Typ
Supply Voltage
VCC
3.0
Input High Voltage, all inputs
VIH
2.0
Input Low Voltage, all inputs
VIL
-0.3
Unit
Max
3.3
3.6
V
- VCC + 0.3
V
-
V
0.8
Capacitance
Ta = 25°C, VCC = 3.3V ± 10 %, f = 1MHz
Parameter
Symbol
Typ
Max
Unit
Note
Input capacitance (Address)
CI1
-
5
pF
1
Input capacitance (RAS, CAS, OE, WE)
CI2
-
7
pF
1
Output capacitance
(Data-in, Data-out)
CI/O
-
7
pF
1, 2
Note: 1. Capacitance measured with effective capacitance measuring method.
2. RAS, CAS = V IH to disable Dout.
Rev.1
Page 7
DC Characteristics :
(Ta = 0 to 70°C , VCC = + 3.3V ± 10 %, VSS = 0V)
Parameter
Symbol
Test Conditions
AD404M42V
-5
Operating current
Low
power
S-version
Unit
Notes
1, 2
-6
Min
Max
Min
Max
ICC1
RAS cycling
CAS, cycling
tRC = min
-
120
-
110
mA
ICC2
LVTTL interface
RAS, CAS = VIH
Dout = High-Z
-
0.5
-
0.5
mA
CMOS interface
-
0.15
-
0.15
mA
LVTTL interface
RAS, CAS = VIH
Dout = High-Z
-
2
-
2
mA
CMOS interface
-
0.5
-
0.5
mA
RAS, CAS ≥ V C C -0.2V
Dout = High-Z
Standby
Current
Standard
power
version
RAS, CAS ≥ V C C -0.2V
Dout = High-Z
RAS- only refresh current
ICC3
RAS cycling, CAS = VIH
tRC = min
-
120
-
110
mA
1, 2
EDO page mode current
ICC4
tPC = min
-
90
-
80
mA
1, 3
CAS- before- RAS refresh
current
ICC5
tRC = min
RAS, CAS cycling
-
120
-
110
mA
1, 2
Self- refresh current
(S-Version)
ICC8
t RASS ≥ 100µs
-
550
-
550
µA
Rev.1
Page 8
DC Characteristics :
(Ta = 0 to 70°C, VCC= +3.3V ± 10 %, VSS= 0V)
AD404M42V
-5
Parameter
Symbol
Test Conditions
Min
Unit
-6
Max
Min
Max
Input leakage current
ILI
0V ≤ Vin ≤ V C C + 0.3V
-5
5
-5
5
µA
Output leakage current
ILO
0V ≤ Vout ≤ V CC + 0.3V
-5
5
-5
5
µA
Output high Voltage
VOH
IOH = -2mA
2.4
-
2.4
-
V
Output low voltage
VOL
IOL = +2mA
-
0.4
-
0.4
V
Dout = Disable
Notes:
1. ICC is specified as an average current. It depends on output loading condition and cycle rate when the
device is selected. ICC max is specified at the output open condition.
2. Address can be changed once or less while RAS = VIL.
3. For I CC4, address can be changed once or less within one EDO page mode cycle time.
Rev.1
Page 9
Notes
AC Characteristics
(T a = 0 to + 70°C, Vcc = 3.3V ± 10 %, Vss = 0V) *1, *2, *3, *4
Test conditions
• Output load: one TTL Load and 100pF (VCC = 3.3V ± 10 %)
• Input timing reference levels:
VIH = 2.0V, VIL = 0.8V (VCC = 3.3V ± 10 %)
• Output timing reference levels:
VOH = 2.0V, VOL = 0.8V
Read, Write, Read- Modify- Write and Refresh Cycles
(Common Parameters)
AD404M42V
-5
Parameter
Symbol
Min
Unit
Notes
-6
Max
Min
Max
Random read or write cycle time
tRC
84
-
104
-
ns
RAS precharge time
tRP
30
-
40
-
ns
CAS precharge time in normal mode
tCPN
10
-
10
-
ns
RAS pulse width
tRAS
50
10000
60
10000
ns
5
CAS pulse width
tCAS
8
10000
10
10000
ns
6
Row address setup time
tASR
0
-
0
-
ns
Row address hold time
tRAH
8
-
10
-
ns
Column address setup time
tASC
0
-
0
-
ns
Column address hold time
tCAH
8
-
10
-
ns
RAS to CAS delay time
tRCD
12
37
14
45
ns
8
RAS to column address delay time
tRAD
10
25
12
30
ns
9
Column address to RAS lead time
tRAL
25
-
30
-
ns
RAS hold time
tRSH
8
-
10
-
ns
CAS hold time
tCSH
38
-
40
-
ns
CAS to RAS precharge time
tCRP
5
-
5
-
ns
OE to Din delay time
tOED
12
-
15
-
ns
tT
1
50
1
50
ns
Refresh period
tREF
-
32
-
32
ms
Refresh period (S- Version)
tREF
-
128
-
128
ms
CAS to output in Low- Z
tCLZ
0
-
0
-
ns
CAS delay time from Din
tDZC
0
-
0
-
ns
OE delay time from Din
tDZO
0
-
0
-
ns
Transition time (rise and fall)
Rev.1
7
10
11
Page 10
Read Cycle
AD404M42V
-5
Parameter
Symbol
Min
Unit
Notes
-6
Max
Min
Max
Access time from RAS
tRAC
-
50
-
60
ns
12
Access time from CAS
tCAC
-
14
-
15
ns
13, 14
tAA
-
25
-
30
ns
14, 15
Access time from OE
tOEA
-
12
-
15
ns
Read command setup time
tRCS
0
-
0
-
ns
7
Read command hold time to CAS
tRCH
0
-
0
-
ns
10, 16
Read command hold time to RAS
tRRH
0
-
0
-
ns
16
Output buffer turn-off time
tOFF
0
12
0
15
ns
17
Output buffer turn-off time from OE
tOEZ
0
12
0
15
ns
17
Unit
Notes
7, 18
Access time from column address
Write Cycle
AD404M42V
-5
Parameter
Symbol
Min
-6
Max
Min
Max
Write command setup time
tWCS
0
-
0
-
ns
Write command hold time
tWCH
8
-
10
-
ns
Write command pulse width
tWP
8
-
10
-
ns
Write command to RAS lead time
tRWL
13
-
15
-
ns
Write command to CAS lead time
tCWL
8
-
10
-
ns
Data-in setup time
tDS
0
-
0
-
ns
19
Data-in hold time
tDH
8
-
10
-
ns
19
tWED
10
-
10
-
ns
WE to Data-in delay
Rev.1
Page 11
Read- Modify- Write Cycle
AD404M42V
-5
Parameter
Min
Symbol
Unit
Notes
-6
Max
Min
Max
Read-modify- write cycle time
tRWC
108
-
133
-
ns
RAS to WE delay time
tRWD
64
-
77
-
ns
18
CAS to WE dealy time
tCWD
26
-
32
-
ns
18
Column address to WE delay time
tAWD
39
-
47
-
ns
18
OE hold time from WE
tOEH
8
-
10
-
ns
Refresh Cycle
AD404M42V
-5
Parameter
Symbol
Min
-6
Max
Min
Max
Unit
Notes
CAS setup time (CBR refresh)
tCSR
5
-
5
-
ns
CAS hold time (CBR refresh)
tCHR
8
-
10
-
ns
10
RAS precharge to CAS hold time
tRPC
5
-
5
-
ns
7
RAS pulse width (self refresh)
tRASS
100
-
100
-
µs
RAS precharge time (self refresh)
tRPS
90
-
110
-
ns
CAS hold time (CBR self refresh)
tCHS
-50
-
-50
-
ns
WE setup time
tWSR
0
-
0
-
ns
WE hold time
tWHR
10
-
10
-
ns
Rev.1
Page 12
EDO Page Mode Cycle
AD404M42V
-5
Parameter
Symbol
-6
Min
Max
Min
Max
Unit
Notes
EDO page mode cycle time
tPC
20
-
25
-
ns
EDO page mode CAS precharge time
tCP
10
-
10
-
ns
EDO page mode RAS pulse width
tRASP
50
105
60
105
ns
20
Access time from CAS precharge
tCPA
-
30
-
35
ns
10, 14
RAS hold time from CAS precharge
tCPRH
30
-
35
-
ns
OE high hold time from CAS high
tOEHC
5
-
5
-
ns
OE high pulse width
tOEP
10
-
10
-
ns
Data output hold time after CAS low
tCOH
5
-
5
-
ns
Output disable delay from WE
tWHZ
3
10
3
10
ns
WE pulse width for output disable when
CAS high
tWPZ
7
-
7
-
ns
EDO Page Mode Read Modify Write Cycle
AD404M42V
-5
Parameter
Symbol
-6
Min
Max
Min
Max
Unit
Notes
10
EDO page mode read- modify- write cycle
CAS precharge to WE delay time
tCPW
45
-
55
-
ns
EDO page mode read- modify- write cycle
time
tPRWC
56
-
68
-
ns
Rev.1
Page 13
Notes :
1. AC measurements assume t T = 2ns.
2. An initial pause of 100 µs is required after power up, and it followed by a minimum of eight
initialization cycles (RAS - only refresh cycle or CAS - before - RAS refresh cycle). If the internal
refresh counter is used, a minimun of eight CAS - before - RAS refresh cycles are required.
3. In delayed write or read-modify-write cycles, OE must disable output buffer prior to applying data to
the device.
4. All the VCC and VSS pins shall be supplied with the same voltages.
5. tRAS(min) = tRWD(min)+t RWL(min)+tT in read-modify-write cycle.
6. tCAS (min) = tCWD(min)+tCWL(min)+tT in read-modify-write cycle.
7. tASC(min), tRCS (min), tWCS(min), and tRPC are determined by the falling edge of CAS .
8. t RCD(max) is specified as a reference point only, and tRAC (max) can be met with the tRCD(max) limit.
Otherwise, tRAC is controlled exclusively by tCAC if tRCD is greater than the specified tRCD(max) limit.
9. tRAD(max) is specified as a reference point only, and tRAC(max) can be met with the tRAD(max) limit.
Otherwise, tRAC is controlled exclusively by tAA if tRAD is greater than the specified tRAD(max) limit.
10. tCRP, tCHR , tRCH, tCPA and tCPW are determined by the rising edge of CAS .
11. V IH(min) and VIL(max) are reference levels for measuring timing or input signals. Therefore, transition
time is measured between VIH and VIL.
≤
12. Assumes that t RCD
≤
tRCD(max) and tRAD
tRAD(max). If t RCD or tRAD is greater than the maximum
recommended value shown in this table, tRAC exceeds the value shown.
13. Assumes that tRCD
≥ t RCD (max) and tRAD ≤ t RAD (max).
14. Access time is determined by the maximum of tAA , tCAC, tCPA.
15. Assumes that t RCD ≤ tRCD (max) and t RAD
≥ tRAD (max).
16. Either tRCH or tRRH must be satisfied for a read cycle.
17. tOFF(max) and tOEZ(max) define the time at which the output achieves the open circuit condition (high
impedance). t OFF is determined by the later rising edge of RAS or CAS.
18. tWCS, tRWD, tCWD, and tAWD are not restrictive operating parameters. They are included in the data
sheet as electrical characteristics only. If tWCS ≥ t WCS (min), the cycle is an early write cycle and the
data out will remain open circuit (high impedance) throughout the entire cycle. If tRWD
tCWD
≥ t CWD (min),
t AWD
≥ t AWD (min) and
tCPW
≥ tRWD (min),
≥ tCPW (min), the cycle is a read-modify-write and
the data output will contain data read from the selected cell. If neither of the above sets of conditions
is satisfied, the condition of the data output (at access time) is indeterminate.
19. These parameters are referenced to CAS separately in an early write cycle and to WE edge in a
delayed write or a read-modify-write cycle.
20. tRASP defines RAS pulse width in EDO page mode cycles.
Rev.1
Page 14
Timing Waveforms
• Read Cycle
t
RC
t
t
RP
RAS
RAS
t
CRP
t
CSH
t
RCD
t
RSH
t
T
t
CPN
t
CAS
CAS
t
RAL
t
RAD
t
ASR
ADDRESS
t
ASC
t
RAH
t
CAH
Column
Row
t
RRH
t
RCH
t
RCS
WE
OE
t
OEA
t
CAC
t
OEZ
t
OFF
t
AA
t
OFF
t
RAC
D OUT
DQ1~DQ4
t CLZ
Note :
= don’t care
= Invalid Dout
Rev.1
Page 15
•Early Write Cycle
t
RC
t
RAS
t
RP
RAS
t
CRP
t
CSH
t
RCD
t
RSH
t
CPN
t
T
t
CAS
CAS
t
RAD
t
ASR
ADDRESS
t
RAH
t
RAL
t
ASC
Row
t
CAH
Column
t
RAL
t WCS
t WCH
WE
t
DS
DQ1~DQ4
t
DH
DIN
Rev.1
Page 16
• Delayed Write Cycle
t
RC
t
t
RP
RAS
RAS
t
CSH
t
CRP
t
RCD
t
RSH
t
T
t
CPN
t
CAS
CAS
t
ASR
ADDRESS
Row
t
RAH
t
CAH
t
ASC
Column
t CWL
t RCS
t RWL
t WP
WE
t OED
OE
t OEH
t DS
t
DS
DQ1~DQ4
OPEN
t
DH
DIN
Rev.1
Page 17
• Read - Modify - Write Cycle
t
RWC
t
t RP
RAS
RAS
t
T
t
RCD
t
CAS
t
CRP
t
CPN
CAS
t
RAD
t
ASR
ADDRESS
t
ASC
t
RAH
Row
t
CAH
Column
t
RCS
t
CWL
t
RWL
t
CWD
t
AWD
t
RWD
t
WP
WE
t
DZC
t
DH
t DS
OPEN
DQ1~DQ4
t
DZO
DIN
t OED
t OEH
OE
t RAC
t OEA
t CAC
t AA
t OEZ
DQ1~DQ4
DOUT
Rev.1
Page 18
• EDO Page Mode Read Cycle
t
RP
t
RASP
t
CPRH
RAS
t
CRP
t
PC
t
CSH
t
CRP
t
RCD
t
CAS
t
RSH
t
CAS
t
CP
t
CAS
t CP
t
CPN
CAS
t
RAD
t
ASR
ADDRESS
t
RAL
t
ASC
t
RAH
Row
t
CAH
Column 1
t
ASC
t
ASC
t
CAH
t
CAH
Column N
Column 2
t
RRH
t
RCH
t RCS
WE
Row
WE
t OEHC
t OEA
t
OEP
t OEA
OE
OE
t RAC
t CPA
t CPA
t AA
t AA
t OEZ
t AA
t OFF
t OEZ
t CAC
t CAC
t CAC
t OFF
t COH
DQ1~DQ4
DOUT 1
DOUT N
DOUT 2
Rev.1
Page 19
OPEN
• EDO Page Mode Early Write Cycle
t
t
RP
RASP
RAS
tT
t
CSH
t
RSH
t
CAS
t
PC
t
CAS
t
RCD
t
CAS
t
CP
t CP
t
CRP
t
CPN
CAS
t
ASR
ADDRESS
Row
t
RAH
t
ASC
t
CAH
t
ASC
t
CAH
Column N
t WCS
t WCH
t WCS
t WCH
t DS
t DH
t DS
t DH
WE
t DS
DQ1~DQ4
t WCH
t
CAH
Column 2
Column 1
t WCS
WE
t
ASC
t DH
DIN 2
DIN 1
Rev.1
DIN N
Page 20
• EDO Page Mode Read-Early-Write Cycle
t
t
RP
RASP
t
CPRH
RAS
t
CRP
t
PC
t
CSH
t
CRP
t
RCD
t
CAS
t
RSH
t
CAS
t
CP
t
CAS
t CP
t
CPN
CAS
t
CAL
t
CSH
t
RAD
t
ASR
ADDRESS
t
RAL
t
ASC
t
RAH
Row
t
RAH
t
ASC
t
CAH
Column N
Column 2
Column 1
t
RCH
t RCS
WE
t
ASC
t
CAH
Row
t
WCS
t
WCH
WE
t OEA
t
WED
OE
OE
t RAC
t CPA
t AA
t AA
t WHZ
t CAC
t CAC
t DH
t DS
t COH
DQ1~DQ4
OPEN
Data
Doutput 1
Data
Doutput 2
Data
Input N
Rev.1
Page 21
• EDO Page Mode Read-Modify-Write Cycle
t RASP
tCPRH
t RP
RAS
t
T
t
RCD
t
CP
t
CAS
t
PRWC
t
CRP
t CP
t
CAS
t
CAS
CAS
t
RAD
t
ASR
t
ASC
t
RAH
ADDRESS
t
ASC
t
CAH
Column 2
t
CWL
t
RWD
t
AWD
t
CWD
WE
t
CAH
t
CAH
Column
1
Column
1
Row
t
RAL
t
ASC
t
RCS
Column N
t
CWL
t
CPW
t
AWD
t
CWD
t
RCS
t
CWL
t
CPW
t
AWD
t
CWD
t
RWL
WE
t RCS
t WP
t WP
t DS
t DZC
DIN 1
t DH
OPEN
DIN 2
t DZO
t DH
OPEN
DIN N
t DZO
t DZO
t OED
t OED
t DS
t DS
t DH
OPEN
DQ1~DQ4
t WP
t DZC
t DZC
t OEH
t OEH
t OED
t OEH
OE
t OEA
t OEA
t CAC
t CAC
t RAC
t AA
t CPA
t AA
t CPA
t AA
t OEA
t CAC
t OEZ
t OEZ
t OEZ
DQ1~DQ4
DOUT 1
DOUT
Rev.1
2
DOUT
N
Page 22
• Read Cycle with WE Controlled Disable
RAS
t
CSH
t
RCD
t
CAS
t
T
CAS
t
RAD
t
ASR
ADDRESS
t
ASC
t
RAH
Row
t
CAH
Column
t RCH
t RCS
t WPZ
WE
t WHZ
t DS
OE
tOEA
tCAC
tOEZ
t AA
t RAC
DQ1~DQ4
DOUT
tCLZ
Rev.1
Page 23
RAS-Only Refresh Cycle
t RC
t RP
t RAS
RAS
tT
tRPC
t CRP
tCRP
CAS
tASR
ADDRESS
tRAH
ROW
tOFF
OPEN
DQ1~DQ4
CAS-Before-RAS Refresh Cycle
tRC
tRP
RAS
tRC
tRAS
tT
t RAS
tRP
tRPC
tRPC
t RP
tCRP
t CSR
t CHR
tCSR
t CHR
tWSR
tWHR
tWSR
tWHR
CAS
WE
tOFF
OPEN
DQ1~DQ4
Rev.1
Page 24
CBR Self-Refesh Cycle
t RPS
t RASS
RAS
t RPC
t CSR
CAS
tCHS
tOFF
High lmpedance
DQ1~DQ4
tWSR
WE
tWHR
OPEN
Rev.1
Page 25
• Hidden Refresh Cycle
t RC
t RC
t RC
t RP
tRAS
(READ)
tRAS
t RP
(REFRESH)
tRAS
t RP
(REFRESH)
RAS
tT
t CHR
tCRP
t RSH
t RCD
tCAS
CAS
t RAD
t ASR
ADDRESS
t RAH
t RAL
tASC
tCAH
COlumn
ROW
tRRH
t RCS
tRCH
WE
OE
t OEZ
t OEA
t CAC
t OFF
t AA
t OFF
t RAC
D OUT
DQ1~DQ4
Rev.1
Page 26
Ordering information
Part Number
Access time
Package
AD404M42VSA-5
50 ns
AD404M42VSA-6
60 ns
300mil 26/24-Pin
AD404M42VTA-5
50 ns
Plastic SOJ
TSOP II
AD404M42VTA-6
60 ns
AD404M42VSA-5
• AD
• Ascend Memory Product
• 40
• Device Type
• 4M4
• Density and Organization
•2
• Refresh Rate, 2: 2K Refresh
•V
• T: 5V, V: 3.3V
•S
• Package Type (S : SOJ, T : TSOP II)
•A
• Version
•5
• Speed (5: 50 ns, 6: 60 ns)
Packaging information
• 300 mil, 26/24-Pin Plastic SOJ
D
A
A1
A2
MILLIMETERS
INCHES
MIN. NOM. MAX. MIN.
NOM. MAX.
3.25
3.51
3.76 0.128 0.138 0.148
2.08
----0.082
----2.54 REF.
0.100 REF.
b
0.41
---
0.51
0.016
---
0.020
b1
b2
0.41
0.66
0.46
---
0.48
0.81
0.016
0.026
0.018
---
0.019
0.032
c
c1
D
E
E1
E2
e
R1
0.18
0.18
17.02
--0.30
--0.28
17.15 17.27
8.51 BASIC
7.49
7.62
7.75
6.78 BASIC
1.27 BASIC
0.76
--1.02
0.007
0.007
0.670
DIM
--0.012
0.011
--0.675 0.680
0.335 BASIC
0.295 0.300 0.305
0.267 BASIC
0.050 BASIC
0.030
--0.040
b
26
21
19
14
b1
c1 c
E1
E
BASE METAL
WITH PLATING
1
6
8
13
SECTION B-B
CL
0.025" MIN.
A2
B
B
A
A1
NOTE:
1. CONTROLLING DIMENSION : INCHES
2. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION.
MOLD PROTRUSION SHALL NOT EXCEED 0.006"(0.15mm) PER SIDE.
DIMENSION E1 DOES NOT INCLUDE INTERLEAD PROTRUSION.
INTERLEAD PROTRUSION SHALL NOT EXCEED 0.01"(0.25mm) PER SIDE.
3. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION OR
INTRUSION. DAMBAR PROTRUSION SHALL NOT CAUSE THE
SHOULDER WIDTH TO EXCEED b2 MAX BY MORE THAN 0.005"(0.127mm)
DAMBAR INTRUSION SHALL NOT REDUCE THE SHOULDER WIDTH
TO LESS THAN 0.001"(0.025mm) BELOW b2 MIN.
RAD R1
e
b2
b
4-e
0.004"
E2
SEATING PLANE
0.007"M
Rev.1
Page 27
• 300 mil, 26/24-Pin TSOP II
DIM
A
MILLIMETERS
MIN.
NOM.
INCHES
MAX.
MIN.
NOM.
MAX.
---
---
1.20
---
---
0.047
A1
0.05
---
0.15
0.002
---
0.006
A2
0.95
1.00
1.05
0.037
0.039
0.041
b
0.30
---
0.52
0.012
---
0.020
b1
0.30
0.40
0.45
0.012
0.016
0.018
c
0.12
---
0.21
0.005
---
0.008
c1
0.12
0.15
0.16
0.005
0.006
(0.006)
D
ZD
17.01
17.14
17.27
0.670
0.675
0.680
e
E
9.02
0.95 REF.
0.0374 BASIC
1.27 BASIC
0.050 BASIC
RAD R1
26
21
19
14
RAD R
A2
c
B
E1
E
B
A1
L
DETAIL A
0 ~5
b
1
6
8
b1
13
SECTION B-B
D
9.22
9.42
0.355
0.363
0.371
E1
7.49
7.62
7.75
0.295
0.300
0.305
L
0.40
0.50
0.60
0.016
0.020
0.024
R
0.12
---
0.25
0.005
---
0.010
R1
0.12
---
---
0.005
---
c1
BASE METAL
WITH PLATING
---
NOTE:
1. CONTROLLING DIMENSION : MILLIMETERS
2. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION.
MOLD PROTRUSION SHALL NOT EXCEED 0.15(0.006") PER SIDE.
DIMENSION E1 DOES NOT INCLUDE INTERLEAD PROTRUSION.
INTERLEAD PROTRUSION SHALL NOT EXCEED 0.25(0.01") PER SIDE.
3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSIONS/INTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL NOT CAUSE THE LEAD TO
BE WIDER THAN THE MAX b DIMENSION BY MORE THAN 0.13mm.
DAMBAR INTRUSION SHALL NOT CAUSE THE LEAD TO BE NARROWER
THAN THE MIN b DIMENSION BY MORE THAN 0.07mm.
c
DETAIL A
(ZD)
A
4-1.27
REF.
b
e
SEATING PLANE
0.200(0.008")
M
Rev.1
0.100(0.004")
Page 28
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