DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET ® POWERDI ADVANCED INFORMATION Product Summary Features V(BR)DSS RDS(ON) 60V 15mΩ @ VGS = 10V 24mΩ @ VGS = 4.5V ID TC = +25°C 32 A 24 A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Thermally Efficient Package - Cooler Running Applications High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance Fast Switching Speed <1.1mm Package Profile – Ideal for Thin Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Applications Load Switch Adaptor Switch Notebook PC Case: POWERDI5060-8 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.097 grams (Approximate) D POWERDI5060-8 Pin1 S D S D S D G D G S Top View Top View Pin Configuration Internal Schematic Bottom View Ordering Information (Note 4) Part Number DMT6016LPS-13 Notes: Case POWERDI5060-8 Packaging 2,500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information POWERDI5060-8 D D D D =Manufacturer’s Marking T6016LS = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01 to 53) T6016LS YY WW DMT6016LPS S S Document number: DS37218 Rev. 5 - 2 S G 1 of 7 www.diodes.com February 2015 © Diodes Incorporated DMT6016LPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State ADVANCED INFORMATION Continuous Drain Current (Note 6) VGS = 10V t < 10s TC = +25°C TC = +70°C TA = +25°C TA = +70°C Value 60 ±20 32 25 ID A 14.8 11.9 60 2 15.3 11.7 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 8) L = 0.1mH Avalanche Energy (Note 8) L = 0.1mH Units V V IDM IS IAS EAS A A A A mJ Thermal Characteristics Characteristic Symbol PD Total Power Dissipation (Note 5) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 5) RJA Total Power Dissipation (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) RJA Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Electrical Characteristics RJC TJ, TSTG Units W °C/W W °C/W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 — — — — — — 1 ±100 µA VGS(th) Static Drain-Source On-Resistance RDS (ON) VSD 1 — — — — — — 0.7 2.5 15 24 1.2 Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — — 864 282 27 1.3 8.4 17 3.1 4.3 3.4 5.2 13 7 22 11 — — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: Value 1.23 102 52 2.7 49 24 4.8 -55 to +150 V nA V mΩ V Test Condition VGS = 0V, ID = 250µA VDS =48V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 20A VGS = 4.5V, ID = 18A VGS = 0V, IS = 1A pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 30V, ID = 10A ns VGS = 10V, VDS = 30V, RG = 6Ω, ID = 10A ns nC IF = 10A, di/dt = 100A/µs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMT6016LPS Document number: DS37218 Rev. 5 - 2 2 of 7 www.diodes.com February 2015 © Diodes Incorporated DMT6016LPS 30 30.0 VDS = 5.0V VGS = 10V 27.0 VGS = 4.0V 27 VGS = 4.5V 24 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 21.0 18.0 15.0 VGS = 3.5V 12.0 9.0 3.0 18 15 12 9 TA = 150°C 0 1 2 3 4 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics VGS = 4.5V 0.02 0.015 VGS = 10V 0.01 0.005 0 0 3 6 9 12 15 18 21 24 27 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 1.8 VGS = 10V ID = 10A 1.6 1.4 VGS = 4.5V ID = 6A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMT6016LPS Document number: DS37218 Rev. 5 - 2 3 of 7 www.diodes.com TA = 85°C TA = 25°C TA = -55°C 0 1.5 5 0.03 0.025 T A = 125°C 3 VGS = 3.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 21 6 6.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCED INFORMATION 24.0 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.025 VGS = 10V TA = 150°C TA = 125°C 0.02 TA = 85°C 0.015 T A = 25°C 0.01 0.005 TA = -55°C 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.04 0.035 0.03 VGS = 4.5V ID = 6A 0.025 0.02 VGS = 10V ID = 10A 0.015 0.01 0.005 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature February 2015 © Diodes Incorporated DMT6016LPS 30 24 2.5 2 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 27 ID = 1mA ID = 250µA 1.5 21 18 15 TA = 85°C 9 TA = 125°C TA = 25°C 6 3 0 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 10000 TA = 125°C 1000 TA = 85°C 100 10 TA = 25°C 1 0.1 TA = -55°C 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10000 TA = 150°C CT, JUNCTION CAPACITANCE (pF) IDSS, DRAIN LEAKAGE CURRENT (nA) TA = 150°C 12 1 Ciss 1000 Coss 100 C rss 10 1 5 10 15 20 25 30 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Drain-Source Leakage Current vs. Voltage 0 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 100 10 RDS(on) Limited 8 ID, DRAIN CURRENT (A) V GS GATE THRESHOLD VOLTAGE (V) ADVANCED INFORMATION 3 VDS = 30V ID = 10A 6 4 2 0 0 2 4 6 8 10 12 14 16 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMT6016LPS Document number: DS37218 Rev. 5 - 2 18 4 of 7 www.diodes.com 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 TJ(max) = 150°C TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 0.01 0.01 PW = 1ms PW = 100µs 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 February 2015 © Diodes Incorporated DMT6016LPS r(t), TRANSIENT THERMAL RESISTANCE ADVANCED INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 102°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 DMT6016LPS Document number: DS37218 Rev. 5 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 February 2015 © Diodes Incorporated DMT6016LPS Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. POWERDI®5060-8 D Detail A ADVANCED INFORMATION D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M b3 (4X) M1 Detail A L1 G POWERDI®5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10º 12º 11º Θ1 6º 8º 7º All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. POWERDI®5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMT6016LPS Document number: DS37218 Rev. 5 - 2 G Y(4x) 6 of 7 www.diodes.com Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 February 2015 © Diodes Incorporated DMT6016LPS IMPORTANT NOTICE ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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