NCP6335 Configurable 4.0 A Step Down Converter - Transient Load Helper The NCP6335 is a synchronous buck converter optimized to supply the different sub systems of portable applications powered by one cell Li−Ion or three cell Alkaline/NiCd/NiMH batteries. The device is able to deliver up to 4.0 A, with programmable output voltage from 0.6 V to 1.4 V. It can share the same output rail with another DC−to−DC converter and works as a transient load helper. Operation at a 3 MHz switching frequency allows the use of small components. Synchronous rectification and automatic PWM/PFM transitions improve overall solution efficiency. The NCP6335 is in a space saving, low profile 2.0 x 1.6 mm CSP−20 package. http://onsemi.com WLCSP20 CASE 568AG MARKING DIAGRAM Features 6335x AWLYWW G • Input Voltage Range from 2.3 V to 5.5 V: Battery and 5 V Rail Powered Applications • Programmable Output Voltage: 0.6 V to 1.4 V in 6.25 mV Steps • Modular Output Stage Drive Strength for Increased Efficiency x = D1: Prototype = F: 3.5 A = D: 2.5 A (Stand−Alone) A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week G = Pb−Free Package Depending on the Output Current • 3 MHz Switching Frequency with on Chip Oscillator • Uses 470 nH Inductor and 2 x 22 mF Capacitors for Optimized Footprint and Solution Thickness • PFM/PWM Operation for Optimum Increased Efficiency • Low 35 mA Quiescent Current • I2C Control Interface with Interrupt and Dynamic Voltage Scaling • • • • • Support Enable Pins, Power Good/Fail Signaling Thermal protections and Temperature Management Transient Load Helper: Share the Same Rail with Another DCDC Small 2.0 x 1.6 mm / 0.4 mm pitch CSP Package These are Pb−Free Devices Pb−Free indicator, G or microdot (G), may or may not be present PIN OUT 1 2 3 4 A VSEL EN SCL FB B SDA PGND INTB* PGND PG* AGND C PGND PGND PGND PGND D AVIN PVIN SW SW E PVIN PVIN SW SW Typical Applications • Smartphones • Webtablets AGND Enable Control EN Input VSEL A2 Thermal Protection DCDC 4.0 A Operating Modular Driver D1 AVIN D2 E1 E2 PVIN D3 D4 E3 E4 A1 C1 C2 C3 C4 Output Monitoring B3 Power Fail Supply Input 4.7 uF 470 nH SW 2x 22 uF PGND (Top View) *Optional B2 Interrupt Processor I@C Core B4 SDA B1 SCL A3 I@C Control Interface DCDC 3 MHz Controller A4 FB Processor Core Sense ORDERING INFORMATION See detailed ordering and shipping information on page 29 of this data sheet. Figure 1. Typical Application Circuit © Semiconductor Components Industries, LLC, 2014 April, 2014 − Rev. 5 1 Publication Order Number: NCP6335/D NCP6335 PVIN PVIN PVIN SUPPLY INPUT AVIN ANALOG GROUND AGND Core 4.0 A DC−DC Thermal Protection POWER GOOD (optional) PG ENABLE CONTROL INPUT EN VOLTAGE SELECTION VSEL INTERRUPT OUTPUT (optional) INTB SCL SDA PROCESSOR I2C CONTROL INTERFACE MODULAR DRIVER SW SW POWER INPUT SWITCH NODE SW SW Output Voltage Monitoring 3 MHZ DC−DC converter Controller Operating Mode Control Logic Control Interrupt I2C Sense Figure 2. Simplified Block Diagram http://onsemi.com 2 PGND PGND PGND PGND POWER GROUND FB FEEDBACK NCP6335 1 2 3 4 A VSEL EN SCL FB B SDA PGND INTB* PGND PG* AGND C PGND PGND PGND PGND D AVIN PVIN SW SW E PVIN PVIN SW SW *Optional Figure 3. Pin Out (Top View) PIN FUNCTION DESCRIPTION Pin Name Type D1 AVIN Analog Input B4 AGND Analog Ground Description REFERENCE Analog Supply. This pin is the device analog and digital supply. Could be connected directly to the VIN plane just next to the 4.7 mF PVIN capacitor or to a dedicated 1.0 mF ceramic capacitor. Analog Ground. Analog and digital modules ground. Must be connected to the system ground. CONTROL AND SERIAL INTERFACE A2 EN Digital Input Enable Control. Active high will enable the part. There is an internal pull down resistor on this pin. A1 VSEL Digital Input Output voltage / Mode Selection. The level determines which of two programmable configurations to utilize (operating mode / output voltage). There is an internal pull down resistor on this pin; could be left open if not used. A3 SCL Digital Input I2C interface Clock line. There is an internal pull down resistor on this pin; could be left open if not used B1 SDA Digital Input/Output I2C interface Bi−directional Data line. There is an internal pull down resistor on this pin; could be left open if not used B3 PGND PG Digital Output Analog ground Power Good open drain output. If not used has to be connected to ground plane B2 PGND INTB Digital Output Analog Ground Interrupt open drain output. If not used has to be connected to ground plane DCDC CONVERTER Switch Supply. These pins must be decoupled to ground by a 4.7 mF ceramic capacitor. It should be placed as close as possible to these pins. All pins must be used with short heavy connections. D2, E1, E2 PVIN Power Input D3, D4, E3, E4 SW Power Output Switch Node. These pins supply drive power to the inductor. Typical application uses 0.470 mH inductor; refer to application section for more information. All pins must be used with short heavy connections. C1, C2, C3, C4 PGND Power Ground Switch Ground. This pin is the power ground and carries the high switching current. High quality ground must be provided to prevent noise spikes. To avoid high−density current flow in a limited PCB track, a local ground plane that connects all PGND pins together is recommended. Analog and power grounds should only be connected together in one location with a trace. A4 FB Analog Input Feedback Voltage input. Must be connected to the output capacitor positive terminal with a trace, not to a plane. This is the positive input to the error amplifier. http://onsemi.com 3 NCP6335 MAXIMUM RATINGS Rating Symbol Value Unit VA −0.3 to + 6.0 V VDG IDG −0.3 to VA +0.3 ≤ 6.0 10 V mA Human Body Model (HBM) ESD Rating are (Note 1) ESD HBM 2500 V Charged Device Model (CDM) ESD Rating are (Note 1) ESD CDM 1250 V Analog and power pins: AVIN, PVIN, SW, PG, INTB, FB Digital pins: SCL, SDA, EN, VSEL, Pin: Input Voltage Input Current Latch Up Current: (Note 2) Digital Pins All Other Pins ILU Storage Temperature Range TSTG −65 to + 150 °C Maximum Junction Temperature TJMAX −40 to +150 °C MSL Level 1 Moisture Sensitivity (Note 3) mA ±10 ±100 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This device series contains ESD protection and passes the following tests:Human Body Model (HBM) ±2.5 kV per JEDEC standard: JESD22−A114, Charged Device Model (CDM) ±1.25 kV per JEDEC standard: JESD22−C101 Class IV. 2. Latch up Current per JEDEC standard: JESD78 class II. 3. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A. OPERATING CONDITIONS (Note 4) Symbol AVIN, PVIN Parameter Conditions Min Typ Max Unit 5.5 V Power Supply 2.3 TA Ambient Temperature Range −40 25 +85 °C TJ Junction Temperature Range (Note 5) −40 25 +125 °C CSP−20 on Demo−board − 55 − °C/W RqJA Thermal Resistance Junction to Ambient (Note 6) PD Power Dissipation Rating (Note 7) TA ≤ 85°C − 727 − mW PD Power Dissipation Rating (Note 7) TA = 65°C − 1090 − mW − 0.47 − mH L Inductor for DCDC converter (Note 4) Co Output Capacitor for DCDC Converter (Note 4) 30 − 150 mF Cin Input Capacitor for DCDC Converter (Note 4) 4.7 − − mF Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 4. Including de−ratings (Refer to the Application Information section of this document for further details) 5. The thermal shutdown set to 150°C (typical) avoids potential irreversible damage on the device due to power dissipation. 6. The RqJA is dependent of the PCB heat dissipation. Board used to drive this data was a NCP6335EVB board. It is a multilayer board with 1−once internal power and ground planes and 2−once copper traces on top and bottom of the board. 7. The maximum power dissipation (PD) is dependent by input voltage, maximum output current and external components selected. R qJA + 125 * T A PD http://onsemi.com 4 NCP6335 ELECTRICAL CHARACTERISTICS (Note 9) Min and Max Limits apply for TA = −40°C to +85°C, AVIN = PVIN = 3.6 V and default configuration, unless otherwise specified. Typical values are referenced to TA = + 25°C, AVIN = PVIN = 3.6 V and default configuration, unless otherwise specified. Parameter Symbol Conditions Min Typ Max Unit SUPPLY CURRENT: PINS AVIN – PVINx IQ PWM Operating quiescent current PWM DCDC active in Forced PWM no load − 10 20 mA IQ PFM Operating quiescent current PFM DCDC active in Auto mode no load − minimal switching − 35 70 mA ISLEEP Product sleep mode current EN high, DCDC off or EN low and (VSEL high or Sleep_Mode high) VIN = 2.5 V to 5.5 V − 7 15 mA Product in off mode EN, VSEL and Sleep_Mode low VIN = 2.5 V to 5.5 V − 0.8 5 mA V IOFF DCDC CONVERTER PVIN IOUTMAX DVOUT Input Voltage Range Maximum Output Current Output Voltage DC Error 2.3 − 5.5 Ipeak[1..0] = 00 (Note 10) 2.5 − − Ipeak[1..0] = 01 (Note 10) 3.0 − − Ipeak[1..0] = 10 (Note 10) 3.5 − − Ipeak[1..0] = 11 (Note 10) 4.0 − − Forced PWM mode, Vin range, IOUT from 0 mA and 300 mA −1 − 1 Forced PWM mode, Vin range, IOUT up to IOUTMAX (Note 10) −1 − 1 −1 − 2 Auto mode, Vin range, IOUT up to IOUTMAX (Note 10) FSW % 2.85 3 3.15 MHz RONHS P−Channel MOSFET On Resistance From PVIN to SW VIN = 5.0 V − 45 80 mW RONLS N−Channel MOSFET On Resistance From SW to PGND VIN = 5.0 V − 22 40 mW Peak Inductor Current Open loop – Ipeak[1..0] = 00 3.0 3.4 3.8 Open loop – Ipeak[1..0] = 01 3.6 4.0 4.4 Open loop – Ipeak[1..0] = 10 4.0 4.4 4.8 Open loop – Ipeak[1..0] = 11 4.6 5.0 5.4 IPK Switching Frequency A A DCLOAD Load Regulation IOUT from 300 mA to IOUTMAX − −0.2 − %/A DCLINE Line Regulation IOUT = 300 mA 2.3 V ≤ VIN ≤ 5.5 V − 0 − % ACLOAD Transient Load Response tr = ts = 100 ns Load step 1.2 A (Note 10) − ±40 − mV − 100 − % − 80 100 D tSTART Maximum Duty Cycle Turn on time Time from EN transitions from Low to High to 90% of Output Voltage (DELAY[2..0] = 000b) ms Time from EN transitions from Low to High to VOUT = 1.127 V (Note 10) RDISDCDC DCDC Active Output Discharge VOUT = 1.15 V 150 − 25 35 W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8. Devices that use non−standard supply voltages which do not conform to the intent I2C bus system levels must relate their input levels to the VDD voltage to which the pull−up resistors RP are connected. 9. Refer to the Application Information section of this data sheet for more details. 10. Guaranteed by design and characterized. http://onsemi.com 5 NCP6335 ELECTRICAL CHARACTERISTICS (Note 9) Min and Max Limits apply for TA = −40°C to +85°C, AVIN = PVIN = 3.6 V and default configuration, unless otherwise specified. Typical values are referenced to TA = + 25°C, AVIN = PVIN = 3.6 V and default configuration, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit EN, VSEL VIH High input voltage 1.05 − − V VIL Low input voltage − − 0.4 V 0.5 − 4.5 ms − 0.05 1.00 mA 86 90 94 % 0 3 5 % − 3.5 3.5 − − 14 ms TFTR IPD Digital input X Filter EN, VSEL rising and falling DBN_Time = 01 (Note 10) Digital input X Pull−Down (input bias current) PG (Optional) VPGL Power Good Threshold VPGHYS Power Good Hysteresis Falling edge as a percentage of nominal output voltage TRT Power Good Reaction Time for DCDC Falling (Note 10) Rising (Note 10) VPGL Power Good low output voltage IPG = 5 mA − − 0.2 V PGLK Power Good leakage current 3.6 V at PG pin when power good valid − − 100 nA VPGH Power Good high output voltage Open drain − − 5.5 V INTB (Optional) VINTBL INTB low output voltage IINT = 5 mA 0 − 0.2 V VINTBH INTB high output voltage Open drain − − 5.5 V INTBLK INTB leakage current 3.6 V at INTB pin when INTB valid − − 100 nA 1.7 − 5.0 V I2C VI2CINT High level at SCL/SCA line VI2CIL SCL, SDA low input voltage SCL, SDA pin (Note 8, 10) − − 0.5 V VI2CIH SCL, SDA high input voltage SCL, SDA pin (Note 8, 10) 0.8 * VI2CINT − − V VI2COL SDA low output voltage ISINK = 3 mA (Note 10) − − 0.4 V I2C clock frequency (Note 10) − − 3.4 MHz FSCL TOTAL DEVICE VUVLO Under Voltage Lockout VIN falling − − 2.3 V VUVLOH Under Voltage Lockout Hysteresis VIN rising 60 − 200 mV − 150 − °C − 135 − °C TSD TWARNING TPWTH TSDH TWARNINGH TPWTH H Thermal Shut Down Protection Warning Rising Edge − 105 − °C Thermal Shut Down Hysteresis − 30 − °C Thermal warning Hysteresis − 15 − °C Thermal pre−warning Hysteresis − 6 − °C Pre − Warning Threshold I2C default value Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8. Devices that use non−standard supply voltages which do not conform to the intent I2C bus system levels must relate their input levels to the VDD voltage to which the pull−up resistors RP are connected. 9. Refer to the Application Information section of this data sheet for more details. 10. Guaranteed by design and characterized. http://onsemi.com 6 NCP6335 TYPICAL OPERATING CHARACTERISTICS AVIN = PVIN = 3.6 V, TJ = +25°C, DCDC = 1.15 V (Unless otherwise noted). L = 0.47 mH PIFE20161B – COUT = 2 x 22 mF 0603, CIN = 4.7 mF 0603 95 95 VIN = 5.0 V 85 VIN = 3.6 V VIN = 2.9 V 80 75 70 −40°C 90 EFFICIENCY (%) EFFICIENCY (%) 90 85 25°C 85°C 80 75 0 1000 2000 3000 70 4000 1 10 100 ILOAD (mA) 95 90 90 VIN = 5.0 V EFFICIENCY (%) EFFICIENCY (%) Figure 5. Efficiency vs ILOAD and Temperature VOUT = 1.39375 V, SPM6530 Inductor 95 85 VIN = 3.6 V VIN = 2.9 V 75 70 10k ILOAD (mA) Figure 4. Efficiency vs ILOAD and VIN VOUT = 1.39375 V, SPM6530 Inductor 80 1000 −40°C 85 25°C 80 85°C 75 0 1000 2000 3000 70 4000 1 10 ILOAD (mA) 100 1000 10k ILOAD (mA) Figure 6. Efficiency vs ILOAD and VIN VOUT = 1.15 V, SPM6530 Inductor Figure 7. Efficiency vs ILOAD and Temperature VOUT = 1.15 V, SPM6530 Inductor 95 90 −40°C 90 80 EFFICIENCY (%) EFFICIENCY (%) 85 VIN = 5.0 V 75 VIN = 3.6 V 70 VIN = 2.9 V 85 25°C 85°C 80 75 65 60 0 1000 2000 3000 4000 70 1 ILOAD (mA) 10 100 1000 10k ILOAD (mA) Figure 8. Efficiency vs ILOAD and VIN VOUT = 0.60 V, SPM6530 Inductor Figure 9. Efficiency vs ILOAD and Temperature VOUT = 0.60 V, SPM6530 Inductor http://onsemi.com 7 NCP6335 TYPICAL OPERATING CHARACTERISTICS 95 95 90 90 EFFICIENCY (%) EFFICIENCY (%) AVIN = PVIN = 3.6 V, TJ = +25°C, DCDC = 1.15 V (Unless otherwise noted). L = 0.47 mH PIFE20161B – COUT = 2 x 22 mF 0603, CIN = 4.7 mF 0603 85 VIN = 5.0 V 80 VIN = 3.6 V 75 70 1000 2000 85 25°C 80 85°C 75 VIN = 2.9 V 0 −40°C 3000 70 4000 1 10 100 ILOAD (mA) 1000 10k ILOAD (mA) Figure 10. Efficiency vs ILOAD and VIN VOUT = 1.15 V, PIFE20161B Inductor Figure 11. Efficiency vs ILOAD and Temperature VOUT = 1.15 V, PIFE20161B Inductor 1.0 VOUT ACCURACY (V) VOUT ACCURACY (V) 1.160 1.155 VIN = 5.0 V 1.150 VIN = 3.6 V 1.145 0.5 25°C 85°C 0.0 −40°C −0.5 VIN = 2.9 V 1.140 0 1000 2000 3000 4000 −1.0 2.5 3.0 3.5 Figure 12. VOUT Accuracy vs ILOAD and VIN VOUT = 1.15 V 5.0 5.5 Figure 13. VOUT Accuracy vs VIN and Temperature VOUT = 1.15 V, ILOAD = 2.0 A 1.405 VIN = 5.0 V 0.605 VIN = 3.6 V 0.600 VIN = 2.9 V 0.595 VOUT ACCURACY (V) 0.610 VOUT ACCURACY (V) 4.5 4.0 VIN (V) ILOAD (mA) 0.590 1.400 VIN = 3.6 V VIN = 5.0 V 1.395 VIN = 2.9 V 1.390 1.385 0 1000 2000 ILOAD (mA) 3000 4000 0 Figure 14. VOUT Accuracy vs ILOAD and VIN VOUT = 0.60 V 1000 2000 ILOAD (mA) 3000 4000 Figure 15. VOUT accuracy vs ILOAD and VIN VOUT = 1.39375 V http://onsemi.com 8 NCP6335 TYPICAL OPERATING CHARACTERISTICS 80 40 70 35 60 85°C 50 25°C 30 85°C 25°C 25 −40°C −40°C 40 30 2.5 RONLS (mW) RONHS (mW) AVIN = PVIN = 3.6 V, TJ = +25°C, DCDC = 1.15 V (Unless otherwise noted). L = 0.47 mH PIFE20161B – COUT = 2 x 22 mF 0603, CIN = 4.7 mF 0603 20 3.0 3.5 4.0 4.5 5.0 15 2.5 5.5 3.0 3.5 4.0 VIN (V) 4.5 5.0 5.5 VIN (V) Figure 16. HSS RON vs VIN and Temperature Figure 17. LSS RON vs VIN and Temperature 5 15 4 IOFF (mA) IOFF (mA) 10 3 2 85°C 1 85°C 25°C 5 −40°C 25°C −40°C 0 2.5 3.0 3.5 4.0 4.5 5.0 0 2.5 5.5 3.0 3.5 4.0 4.5 Figure 18. IOFF vs VIN and Temperature 5.5 Figure 19. ISLEEP vs VIN and Temperature 20 100 80 25°C IQPWM (mA) IQPFM (mA) 5.0 VIN (V) VIN (V) 60 85°C 25°C 40 20 10 85°C −40°C −40°C 0 2.5 3.0 3.5 4.0 4.5 5.0 0 2.5 5.5 VIN (V) 3.0 3.5 4.0 4.5 5.0 VIN (V) Figure 20. IQ PFM vs VIN and Temperature Figure 21. IQ PWM vs VIN and Temperature http://onsemi.com 9 5.5 NCP6335 TYPICAL OPERATING CHARACTERISTICS AVIN = PVIN = 3.6 V, TJ = +25°C, DCDC = 1.15 V (Unless otherwise noted). L = 0.47 mH PIFE20161B – COUT = 2 x 22 mF 0603, CIN = 4.7 mF 0603 600 600 500 500 Enter PWM Enter PWM 400 ISWOP (mA) ISWOP (mA) 400 Exit PWM 300 200 100 0 2.5 Exit PWM 300 200 100 3.0 3.5 4.0 4.5 5.0 0 2.5 5.5 VIN (V) 3.0 3.5 4.0 4.5 5.0 5.5 VIN (V) Figure 22. Switchover Point VOUT = 1.15 V Figure 23. Switchover Point VOUT = 1.39375 V Figure 24. PWM Ripple Figure 25. PFM Ripple Figure 26. Normal Power Up, VOUT = 1.15 V Figure 27. DVS Transition 1.0V – 1.39375 V http://onsemi.com 10 NCP6335 TYPICAL OPERATING CHARACTERISTICS AVIN = PVIN = 3.6 V, TJ = +25°C, DCDC = 1.15 V (Unless otherwise noted). L = 0.47 mH PIFE20161B – COUT = 2 x 22 mF 0603, CIN = 4.7 mF 0603 Figure 28. Transient Load 0.1 – 1.6 A Auto Mode Figure 29. Transient Load 0.1 – 1.6 A Forced PWM Mode Figure 30. Transient Load 1.0 – 2.5 A Auto Mode Figure 31. Transient Load 1.0 – 2.5 A Forced PWM Mode Figure 32. Transient Load 2.0 – 3.5 A Auto Mode Figure 33. Transient Load 2.0 – 3.5 A Forced PWM Mode http://onsemi.com 11 NCP6335 DETAILED OPERATING DESCRIPTION Detailed Descriptions Forced PWM The NCP6335 is voltage mode standalone synchronous DC−to−DC converter optimized to supply different sub systems of portable applications powered by one cell Li−Ion or three cells Alkaline/NiCd/NiMh. The IC can deliver up to 4 A at an I2C selectable voltage ranging from 0.6 V to 1.40 V. It can share the same output rail with another DC−to−DC converter and works as a transient load helper without sinking current on shared rail. A 3 MHz switching frequency allows the use of smaller output filter components. Synchronous rectification and automatic PWM/PFM transitions improve overall solution efficiency. Forced PWM is also configurable. Operating modes, configuration, and output power can be easily selected either by using digital I/O pins or by programming a set of registers using an I2C compatible interface capable of operation up to 3.4 MHz. Default I2C settings are factory programmable. The NCP6335 can be programmed to only use PWM and disable the transition to PFM if so desired. Output Stage NCP6335 is a 2.5 A to 4 A output current capable integrated DC to DC converter. To supply such a high current, the internal MOSFETs need to be large. The output stage is composed of nine modules that can be individually Enabled / Disabled by setting the MODULE register. Inductor Peak Current Limitation During normal operation, peak current limitation will monitor and limit the current through the inductor. This current limitation is particularly useful when size and/or height constrain inductor power. The user can select peak current to keep inductor within its specifications. The peak current can be set by writing IPEAK[1..0] bits in LIMCONF register. DC to DC Buck Operation The converter is a synchronous rectifier type with both high side and low side integrated switches. Neither external transistor nor diodes are required for NCP6335 operation. Feedback and compensation network are also fully integrated. The converter can operate in two different modes: PWM and PFM. The transition between PWM/PFM modes can occur automatically or the switcher can be placed in forced PWM mode by I2C programming (PWMVSEL0 / PWMVSEL1 bits of COMMAND register). Table 1. IPEAK VALUES IPEAK[1..0] Inductor Peak Current (A) 00 3.4 − for 2.5 output current 01 4.0 − for 3.0 output current 10 4.4 − for 3.5 output current 11 5.0 − for 4.0 output current Output Voltage Output voltage is set internally by integrated resistor bridge and error amplifier that drives the PWM/PFM controller. No extra component is needed to set output voltage. However, writing in the VoutVSEL0[6..0] bits of the PROGVSEL0 register or VoutVSEL1[6..0] bits of the PROGVSEL1 register will change settings. Output voltage level can be programmed in the 0.6 V to 1.4 V range by 6.25 mV steps. The VSEL pin and VSELGT bit will determine which register between PROGVSEL0 and PROGVSEL1 will set the output voltage. • If VSELGT = 1 AND VSEL=0 ³ Output voltage is set by VoutVSEL0[6..0] bits (PROGVSEL0 register) • Else ³ Output voltage is set by VoutVSEL1[6..0] bits (PROGVSEL1 register) PWM (Pulse Width Modulation) Operating Mode In medium and high load conditions, NCP6335 operates in PWM mode from a fixed clock and adapts its duty cycle to regulate the desired output voltage. In this mode, the inductor current is in CCM (Continuous Current Mode) and the voltage is regulated by PWM. The internal N−MOSFET switch operates as synchronous rectifier and is driven complementary to the P−MOSFET switch. In CCM, the lower switch (N−MOSFET) in a synchronous converter provides a lower voltage drop than the diode in an asynchronous converter, which provides less loss and higher efficiency. PFM (Pulse Frequency Modulation) Operating Mode In order to save power and improve efficiency at low loads the NCP6335 operates in PFM mode as the inductor drops into DCM (Discontinuous Current Mode). The upper FET on time is kept constant and the switching frequency is variable. Output voltage is regulated by varying the switching frequency which becomes proportional to loading current. As it does in PWM mode, the internal N−MOSFET operates as synchronous rectifier after each P−MOSFET on−pulse. When load increases and current in inductor becomes continuous again, the controller automatically turns back to PWM mode. Under Voltage Lock Out (UVLO) NCP6335 core does not operate for voltages below the Under Voltage lock Out (UVLO) level. Below UVLO threshold, all internal circuitry (both analog and digital) is held in reset. NCP6335 operation is guaranteed down to VUVLO when battery voltage is dropping off. To avoid erratic on / off behavior, a maximum 200 mV hysteresis is implemented. http://onsemi.com 12 NCP6335 • In Sleep Mode if Sleep_Mode I2C bit is high or VSEL Restart is guaranteed at 2.5 V when VBAT voltage is recovering or rising. is high, • In Off Mode if Sleep_Mode I2C bit and VSEL are low. When EN pin is set to a high level, the DC to DC converter can be enabled / disabled by writing the ENVSEL0 or ENVSEL1 bit of the PROGVSEL0 and PROGVSEL1 registers: If ENx I2C bit is high, DCDC is activated, If ENx I2C is low the DC to DC converter is turned off and device enters in Sleep Mode A built in pull down resistor disables the device when this pin is left unconnected or not driven. Thermal Management Thermal Shutdown (TSD) The thermal capability of IC can be exceeded due to step down converter output stage power level. A thermal protection circuitry is therefore implemented to prevent the IC from damage. This protection circuitry is only activated when the core is in active mode (output voltage is turned on). During thermal shut down, output voltage is turned off. When NCP6335 returns from thermal shutdown, it can re−start in two different configurations depending on REARM bit in the LIMCONF register (see register description section): • If REARM = 0 then NCP6335 does not re−start after TSD. To restart, an EN pin toggle is required. • If REARM = 1, NCP6335 re−starts with register values set prior to thermal shutdown. A Thermal shut down interrupt is raised upon this event. Thermal shut down threshold is set at 150°C (typical) when the die temperature increases and, in order to avoid erratic on / off behavior, a 30°C hysteresis is implemented. After a typical 150°C thermal shut down, NCP6335 will return to normal operation when the die temperature cools below 120°C. Power Up Sequence (PUS) In order to power up the circuit, the input voltage AVIN has to rise above the VUVLO threshold. This triggers the internal core circuitry power up which is the “Wake Up Time” (including “Bias Time”). This delay is internal and cannot be bypassed. EN pin transition within this delay corresponds to the “Initial power up sequence” (IPUS): AVIN UVLO POR ÏÏÏÏÏ ÏÏÏÏÏ EN VOUT ~ 750 us Thermal Warnings In addition to the TSD, the die temperature monitoring will flag potential die over temperature. A thermal warning and thermal pre−warning are implemented which can inform the processor through two different interrupts (if not masked) that NCP6335 is close to its thermal shutdown so that preventive measures to cool down die temperature can be taken by software. The Warning threshold is set by hardware to 135°C typical when the die temperature increases. The Pre−Warning threshold is set by default to 105°C, but can be changed by user by setting the TPWTH[1..0] bits in the LIMCONF register. Wake up Time DELAY[2..0] 32 us Init DVS ramp Time Time Figure 34. Initial Power Up Sequence In addition a user programmable delay will also take place between end of Core circuitry turn on (Wake Up Time and Bias Time) and Init time: The DELAY[2..0] bits of TIME register will set this user programmable delay with a 2 ms resolution. With default delay of 0 ms, the NCP6335 IPUS takes roughly 900 ms, means DCDC output voltage will be ready within 1 ms. The power up output voltage is defined by VSEL state. NOTE: During the Wake Up time, the I2C interface is not active. Any I2C request to the IC during this time period will result in a NACK reply. Active Output Discharge To make sure that no residual voltage remains in the power supply rail, an active discharge path can ground the NCP6335 output voltage. For maximum flexibility, this feature can be easily disabled or enabled with DISCHG bit in PGOOD register. By default the discharge path is disabled. However the discharged path is activated during the first 100 ms after battery insertion. Normal, Quick and Fast Power Up Sequence The previous description applies only when the EN transitions during the internal core circuitry power up (Wake up and calibration time). Otherwise three different cases are possible: • Enabling the part by setting EN pin from Off Mode will result in “Normal power up sequence” (NPUS, with DELAY;[2..0]). Enabling The EN pin controls NCP6335 start up. EN pin Low to High transition starts the power up sequencer. If EN is made low, the DC to DC converter is turned off and device enters: http://onsemi.com 13 NCP6335 • Enabling the part by setting EN pin from Sleep Mode • DC to DC Converter Shut Down When shutting down the device, no shut down sequence is required. Output voltage is disabled and, depending on the DISCHG bit state of PGOOD register, output may be discharged. DCDC Shutdown is initiated by either grounding the EN pin (Hardware Shutdown) or, depending on the VSEL internal signal level, by clearing the ENVSEL0 or ENVSEL1 bits (Software shutdown) in PROGVSEL0 or PROGVSEL1 registers. In hardware shutdown (EN = 0), the internal core is still active and I2C accessible. NCP6335 shuts internal core down when AVIN falls below UVLO. will result in “Quick power up sequence” (QPUS, with DELAY;[2..0]). Sleep mode is when VSEL is high and EN low, or when Sleep_Mode I2C bit is set and EN is low, or finally when DCDC is off and EN high. Enabling the part either by setting ENVSEL0 or ENVSEL1 bits of the PROGVSEL0 and PROGVSEL1 registers or by VSEL pin transition will (whereas EN is already high) results in “Fast power up sequence” (FPUS, without DELAY[2..0]). AVIN UVLO POR EN Dynamic Voltage Scaling (DVS) O F F This converter supports dynamic voltage scaling (DVS) allowing the output voltage to be reprogrammed via I2C commands and provides the different voltages required by the processor. The change between set points is managed in a smooth fashion without disturbing the operation of the processor. When programming a higher voltage, output raises in equidistant steps, which are 6.25 mV/0.166 ms, such that the dV/dt is controlled. When programming a lower voltage, output will decrease in equidistant steps per defined time period such that the dV/dt is controlled (default 6.25 mV/2.666 ms) by writing DVS[1..0] bits in TIME register DVS sequence is automatically initiated by changing output voltage settings. There are two ways to change these settings: • Directly change the active setting register value (VoutVSEL0[6..0] of PROGVSEL0 register or VoutVSEL1[6..0] of the PROGVSEL1 register) via I2C command • Change the VSEL internal signal level by toggling VSEL pin. The second method eliminates the I2C latency and is therefore faster. The DVS transition mode can be changed with the DVSMODE bit in COMMAND register: • In forced PWM mode when accurate output voltage control is needed. DELAY[2..0] VOUT M 20 us 32 us TFTR Bias Time Init Time O D E DVS ramp Time Figure 35. Normal Power Up Sequence AVIN UVLO POR EN VOUT S L E E P M O D E DELAY[2..0] 32 us TFTR Init Time DVS ramp Time Figure 36. Quick Power Up Sequence AVIN UVLO POR VSEL S L E E P VOUT M O D E 32 us TFTR Init Time V2 Internal Reference DVS ramp Time Figure 37. Fast Power Up Sequence Output Voltage DV Dt In addition the delay set in DELAY[2..0] bits in TIME register will apply only for the EN pins turn ON sequence (NPUS and QPUS). The power up output voltage is defined by VSEL state. Note that the sleep mode needs about 150 ms to be established. V1 Figure 38. DVS in Forced PWM Mode Diagram http://onsemi.com 14 NCP6335 • In Auto mode when output voltage has not to be voltage, Power Good pin will remain at high level during transition. Power Good signal during normal operation can be disabled by clearing the PGDCDC bit in PGOOD register. Power Good operation during DVS can be controlled by setting / clearing the bit PGDVS in PGOOD register discharged. Note that approximately 30 ms is needed to transition from PFM mode to PWM mode. Output Voltage V2 Internal Reference DV DCDC_EN Dt V1 95% 90% 32 us min Figure 39. DVS in Auto Mode Diagram DCDC 3.5− 14 us 3.5− 14 us 3.5 us PG Digital IO Settings Figure 40. Power Good signal VSEL Pin By changing VSEL pin levels, the user has a latency free way to change NCP6335 configuration: operating mode (Auto or PWM forced), the output voltage as well as enable. Power Good Delay In order to generate a Reset signal, a delay can be programmed between the output voltage gets 95% of its final value and Power Good pin is released to high level. The delay is set from 0 ms to 64 ms through the TOR[1..0] bits in the TIME register. The default delay is 0 ms. Table 2. VSEL PIN PARAMETERS Parameter VSEL Pin Can Set REGISTER VSEL = LOW REGISTER VSEL = HIGH ENABLE ENVSEL0 PROGVSEL0[7] ENVSEL1 PROGVSEL1[7] VOUT VoutVSEL0[6..0] VoutVSEL1[6..0] OPERATING MODE (Auto / PWM Forced) PWMVSEL0 COMMAND[7] PWMVSEL1 COMMAND[6] Vout PG No TOR[ 2:0 ] Delay VSEL pin action can be masked by writing 0 to the VSELGT bit in the COMMAND register. In that case I2C bit corresponding to VSEL high will be taken into account. Delay Programmed in TOR [2: 0] Figure 41. Power Good Operation EN Pin The EN pin can be gated by writing the ENVSEL0 or ENVSEL1 bits of the PROGVSEL0 and PROGVSEL1 registers, depending on which register is activated by the VSEL internal signal. Interrupt Pin (Optional) The interrupt controller continuously monitors internal interrupt sources, generating an interrupt signal when a system status change is detected (dual edge monitoring). Power Good Pin (Optional) To indicate the output voltage level is established, a power good signal is available. The power good signal is low when the DC to DC converter is off. Once the output voltage reaches 95% of the expected output level, the power good logic signal becomes high and the open drain output becomes high impedance. During operation when the output drops below 90% of the programmed level the power good logic signal goes low (and the open drain signal transitions to a low impedance state) which indicates a power failure. When the voltage rises again to above 95% the power good signal goes high again. During a positive DVS sequence, when target voltage is higher than initial voltage, the Power Good logic signal will be set low during output voltage ramping and transition to high once the output voltage reaches 95% of the target voltage. When the target voltage is lower than the initial Table 3. INTERRUPT SOURCES Interrupt Name TSD Description Thermal Shut Down TWARN Thermal Warning TPREW Thermal Pre Warning UVLO Under Voltage Lock Out IDCDC DCDC current Over / below limit PG Power Good Individual bits generating interrupts will be set to 1 in the INT_ACK register (I2C read only registers), indicating the interrupt source. INT_ACK register is automatically reset by an I2C read. The INT_SEN register (read only register) contains real time indicators of interrupt sources. http://onsemi.com 15 NCP6335 All interrupt sources can be masked by writing in register INT_MSK. Masked sources will never generate an interrupt request on INTB pin. The INTB pin is an open drain output. A non masked interrupt request will result in INTB pin being driven low. When the host reads the INT_ACK registers the INTB pin is released to high impedance and the interrupt register INT_ACK is cleared. Figure 42 is UVLO event example: INTB pin with UVLO SEN_UVLO MASK_UVLO ACK_UVLO INTB I@C access on INT_ACK read read read read Figure 42. Interrupt Operation Example INT_SEN/INT_MSK/INT_ACK and an I2C read access behavior. INT_MSK register is set to disable INTB feature by default. Configurations Default output voltages, enables, DCDC modes, current limit and other parameters can be factory programmed upon request. Two different configurations are pre−defined: 3.5 A NCP6335F 2.5 A (Stand−Alone) NCP6335D Default I2C address PID product identification RID revision identification FID feature identification 0x1C 10h xxh 00h 0x1C 10h xxh 01h Default VOUT – VSEL=1 1.150 V 1.100 V Default VOUT – VSEL=0 1.025 V 1.100 V Default MODE – VSEL=1 Forced PWM Auto mode Default MODE – VSEL=0 Auto mode Auto mode 5.0 A 4.0 A NCP6335FFCT1G NCP6335DFCT1G 6335F 6335D Configuration Default IPEAK OPN Marking http://onsemi.com 16 NCP6335 I2C Compatible Interface NCP6335 can support a subset of I2C protocol Detailed below. I2C Communication Description FROM MCU to NCPxxxx FROM NCPxxxx to MCU START IC ADRESS 1 ACK 0 ACK ACK DATA1 DATA n /ACK STOP READ OUT FROM PART STOP WRITE INSIDE PART 1 à READ /ACK START IC ADRESS ACK DATA1 DATA n ACK If PART down not Acknowledge, the /NACK will be followed by a STOP or Sr. If PART Acknowledges, the ACK can be followed by another data or STOP or Sr 0 àWRITE Figure 43. General Protocol Description The first byte transmitted is the Chip address (with the LSB bit set to 1 for a read operation, or set to 0 for a Write operation). The following data will be: • In case of a Write operation, the register address (@REG) pointing to the register we want to write in followed by the data we will write in that location. The writing process is auto−incremental, so the first data will be written in @REG, the contents of @REG are incremented and the next data byte is placed in the location pointed to by @REG + 1 ., etc. • In case of read operation, the NCP6335 will output the data from the last register that has been accessed by the last write operation. Like the writing process, the reading process is auto−incremental. Read Out From Part The Master will first make a “Pseudo Write” transaction with no data to set the internal address register. Then, a stop then start or a Repeated Start will initiate the read transaction from the register address the initial write transaction has pointed to: In the Drawings Below Change STETS to SETS FROM MCU to NCPxxxx FROM NCPxxxx to MCU STETS INTERNAL REGISTER POINTER START IC ADRESS 0 ACK REGISTER ADRESS ACK STOP 0à WRITE START IC ADRESS 1 ACK ACK DATA1 DATA n /ACK STOP REGISTER ADRESS + (n−1) VALUE REGISTER ADRESS VALUE n REGISTERS READ 1à READ Figure 44. Read Out from Part The first WRITE sequence will set the internal pointer to the register we want access to. Then the read transaction will start at the address the write transaction has initiated. http://onsemi.com 17 NCP6335 Transaction with Real Write then Read With Stop Then Start FROM MCU to NCPxxxx FROM NCPxxxx to MCU SETS INTERNAL REGISTER POINTER START IC ADRESS ACK 0 WRITE VALUE IN REGISTER REG0 + (n−1) WRITE VALUE IN REGISTER REG0 REGISTER REG0 ADRESS ACK ACK REG VALUE ACK REG + (n – 1) VALUE STOP n REGISTERS WRITE 0 à WRITE START IC ADRESS 1 ACK ACK DATA1 /ACK DATA k REGIISTER REG + (n−1) VALUE STOP REGISTER ADRESS + (n−1) + (k−1) VALUE k REGISTERS READ 1 à READ Figure 45. Write Followed by Read Transaction Write in Part Write operation will be achieved by only one transaction. After chip address, the MCU first data will be the internal register we want access to, then following data will be the data we want to write in Reg, Reg + 1, Reg + 2, ., Reg +n. Write n Registers: FROM MCU to NCPxxxx FROM NCPxxxx to MCU SETS INTERNAL REGISTER POINTER START IC ADRESS 0 ACK REGISTER REG0 ADRESS WRITE VALUE IN REGISTER REG0 + (n−1) WRITE VALUE IN REGISTER REG0 ACK ACK REG VALUE REG + (n−1) VALUE ACK STOP n REGISTERS WRITE 0 à WRITE Figure 46. Write in n Registers I2C Address NCP6335 has four available I2C address selectable by factory settings (ADD0 to ADD3). Different address settings can be generated upon request to ON Semiconductor. The default address is set to 38h / 39h since the NCP6335 supports 7−bit address only and ignores A0. Table 4. I2C ADDRESS I2C Address Hex A7 A6 A5 A4 A3 A2 A1 A0 ADD0 W 0x20 R 0x21 0 0 1 0 0 0 0 R/W Add ADD1 W 0x28 R 0x29 0x10 0 0 1 Add ADD2 W 0x30 R 0x31 W 0x38 R 0x39 1 0 0 0x14 0 0 1 Add ADD3 (default) 0 − 1 − 0 0 0 0x18 0 0 Add 1 1 0x1C http://onsemi.com 18 R/W R/W − 1 0 0 R/W − NCP6335 Register Map Table 5 describes I2C registers. Registers can be: R Read only register RC Read then Clear RW Read and Write register Reserved Address is reserved and register is not physically designed Spare Address is reserved and register is physically designed Table 5. I2C REGISTER MAP 2.5 A (STAND−ALONE) CONFIGURATION (NCP6335D) Add. Register Name Type Def. Function 00h INT_ACK RC 00h Interrupt register 01h INT_SEN R 00h Sense register (real time status) 02h INT_MSK RW FFh Mask register to enable or disable interrupt sources (trim) 03h PID R 10h Product Identification 04h RID R Metal Revision Identification 05h FID R 01h 06h to 0Fh − − − 10h PROGVSEL1 RW D0h Output voltage settings and EN for VSEL pin = High (trim) 11h PROGVSEL0 RW D0h Output voltage settings and EN for VSEL pin = Low (trim) 12h PGOOD RW 00h Power good and active discharge settings (trim) 13h TIME RW 19h Enabling and DVS timings (trim) 14h COMMAND RW 01h Enabling and Operating mode Command register (trim) 15h MODULE RW 80h Active module count settings (trim) 16h LIMCONF RW 63h Reset and limit configuration register (trim) 17h to 1Fh − − − Reserved for future use 20h to FFh − − − Reserved. Test Registers Features Identification (trim) Reserved for future use Table 6. I2C REGISTER MAP 3.5 A CONFIGURATION (NCP6335F) Add. Register Name Type Def. Function 00h INT_ACK RC 00h Interrupt register 01h INT_SEN R 00h Sense register (real time status) 02h INT_MSK RW FFh Mask register to enable or disable interrupt sources (trim) 03h PID R 10h Product Identification 04h RID R Metal Revision Identification 05h FID R 00h 06h to 0Fh − − − 10h PROGVSEL1 RW D8h Output voltage settings and EN for VSEL pin = High (trim) 11h PROGVSEL0 RW C4h Output voltage settings and EN for VSEL pin = Low (trim) 12h PGOOD RW 00h Power good and active discharge settings (trim) 13h TIME RW 19h Enabling and DVS timings (trim) 14h COMMAND RW 41h Enabling and Operating mode Command register (trim) 15h MODULE RW 80h Active module count settings (trim) 16h LIMCONF RW E3h Reset and limit configuration register (trim) 17h to 1Fh − − − Reserved for future use 20h to FFh − − − Reserved. Test Registers Features Identification (trim) Reserved for future use http://onsemi.com 19 NCP6335 Registers Description Table 7. INTERRUPT ACKNOWLEDGE REGISTER Name: INTACK Address: 00000000b (00h) Type: RC Default: 00h Trigger: Dual Edge [D7..D0] D7 ACK_TSD D6 D5 D4 D3 D2 D1 D0 ACK_TWARN ACK_TPREW Spare = 0 Spare= 0 ACK_UVLO ACK_IDCDC ACK_PG Bit Bit Description ACK_PG Power Good Sense Acknowledgement 0: Cleared 1: DCDC Power Good Event detected ACK_IDCDC DCDC Over Current Sense Acknowledgement 0: Cleared 1: DCDC Over Current Event detected ACK_UVLO Under Voltage Sense Acknowledgement 0: Cleared 1: Under Voltage Event detected ACK_TPREW Thermal Pre Warning Sense Acknowledgement 0: Cleared 1: Thermal Pre Warning Event detected ACK_TWARN Thermal Warning Sense Acknowledgement 0: Cleared 1: Thermal Warning Event detected ACK_TSD Thermal Shutdown Sense Acknowledgement 0: Cleared 1: Thermal Shutdown Event detected Table 8. INTERRUPT SENSE REGISTER Name: INTSEN Address: 01h Type: R Default: 00000000b (00h) Trigger: N/A D7 D6 D5 D4 D3 D2 D1 D0 SEN_TSD SEN_TWARN SEN_TPREW Spare = 0 Spare = 0 SEN_UVLO SEN_IDCDC SEN_PG Bit SEN_PG Bit Description Power Good Sense 0: DCDC Output Voltage below target 1: DCDC Output Voltage within nominal range SEN _IDCDC DCDC over current sense 0: DCDC output current is below limit 1: DCDC output current is over limit SEN _UVLO Under Voltage Sense 0: Input Voltage higher than UVLO threshold 1: Input Voltage lower than UVLO threshold SEN _TPREW Thermal Pre Warning Sense 0: Junction temperature below thermal pre−warning limit 1: Junction temperature over thermal pre−warning limit SEN _TWARN Thermal Warning Sense 0: Junction temperature below thermal warning limit 1: Junction temperature over thermal warning limit SEN _TSD Thermal Shutdown Sense 0: Junction temperature below thermal shutdown limit 1: Junction temperature over thermal shutdown limit http://onsemi.com 20 NCP6335 Table 9. INTERRUPT MASK REGISTER Name: INTMASK Address: 02h Type: RW Default: 11111111b (FFh) Trigger: N/A D7 D6 D5 D4 D3 D2 D1 D0 MASK_TSD MASK_TWARN MASK_TPREW Spare = 1 Spare = 1 MASK_UVLO MASK_IDCDC MASK_PG Bit Bit Description MASK_PG Power Good interrupt source mask 0: Interrupt is Enabled 1: Interrupt is Masked MASK _IDCDC DCDC over current interrupt source mask 0: Interrupt is Enabled 1: Interrupt is Masked MASK _UVLO Under Voltage interrupt source mask 0: Interrupt is Enabled 1: Interrupt is Masked MASK _TPREW Thermal Pre Warning interrupt source mask 0: Interrupt is Enabled 1: Interrupt is Masked MASK _TWARN Thermal Warning interrupt source mask 0: Interrupt is Enabled 1: Interrupt is Masked MASK _TSD Thermal Shutdown interrupt source mask 0: Interrupt is Enabled 1: Interrupt is Masked Table 10. PRODUCT ID REGISTER Name: PID Address: 03h Type: R Default: 00010000b (10h) Trigger: N/A Reset on N/A D7 D6 D5 D4 D3 D2 D1 D0 PID_7 PID_6 PID_5 PID_4 PID_3 PID_2 PID_1 PID_0 Table 11. REVISION ID REGISTER Name: RID Address: 04h Type: R Default: Metal Trigger: N/A D7 D6 D5 D4 D3 D2 D1 D0 RID_7 RID_6 RID_5 RID_4 RID_3 RID_2 RID_1 RID_0 Bit RID[7..0] Bit Description Revision Identification 00000000: First silicon 00000001: Version Optimized 00010000: Production http://onsemi.com 21 NCP6335 Table 12. FIRMWARE ID REGISTER Name: FID Address: 05h Type: R Default: See Register map Trigger: N/A D7 D6 D5 D4 D3 D2 D1 D0 FID_7 FID_6 FID_5 FID_4 FID_3 FID_2 FID_1 FID_0 Bit Bit Description FID[7..0] Feature Identification 00000000: NCP6335F: 3.5 A configuration 00000001: NCP6335D: 2.5 A configuration Table 13. DC TO DC VOLTAGE PROG (VSEL = 1) REGISTER Name: PROGVSEL1 Address: 10h Type: RW Default: See Register map Trigger: N/A D7 D6 D5 D4 D3 ENVSEL1 D2 D1 D0 VoutVSEL1[6..0] Bit Bit Description VoutVSEL1[6..0] ENVSEL1 Sets the DC to DC converter output voltage when VSEL pin = 1 (and VSEL pin function is enabled in register COMMAND.D0) or when VSEL pin function is disabled in register COMMAND.D0 0000000b = 600 mV − 1111111b = 1393.75 mV (steps of 6.25 mV) EN Pin Gating for VSEL internal signal = High 0: Disabled 1: Enabled Table 14. DC TO DC VOLTAGE PROG (VSEL = 0) REGISTER Name: PROGVSEL0 Address: 11h Type: RW Default: See Register map Trigger: N/A D7 D6 D5 D4 ENVSEL0 ENVSEL0 D2 D1 D0 VoutVSEL0[6..0] Bit VoutVSEL0[ 6..0] D3 Bit Description Sets the DC to DC converter output voltage when VSEL pin = 0 (and VSEL pin function is enabled in register COMMAND.D0) 0000000b = 600 mV − 1111111b = 1393.75 mV (steps of 6.25 mV) EN Pin Gating for VSEL internal signal = Low 0: Disabled 1: Enabled http://onsemi.com 22 NCP6335 Table 15. POWER GOOD REGISTER Name: PGOOD Address: 12h Type: RW Default: 00000000b (00h) Trigger: N/A D7 D6 D5 D4 Spare = 0 Spare = 0 Spare = 0 DISCHG Bit D3 D2 TOR[1..0] D1 D0 PGDVS PGDCDC D1 D0 Bit Description PGDCDC PGDVS Power Good Enabling 0 = Disabled 1 = Enabled Power Good Active On DVS 0 = Disabled 1 = Enabled TOR[1..0] Time out Reset settings for Power Good 00 = 0 ms 01 = 8 ms 10 = 32 ms 11 = 64 ms DISCHG Active discharge bit Enabling 0 = Discharge path disabled 1 = Discharge path enabled Table 16. TIMING REGISTER Name: TIME Address: 13h Type: RW Default: 00011001b (19h) Trigger: N/A D7 D6 D5 D4 DELAY[2..0] D3 DVSdown[1..0] Bit Spare = 0 Bit Description DBN_Time[1..0] EN and VSEL debounce time 00 = No debounce 01 = 1−2 us 10 = 2−3 us 11 = 3−4 us DVSdown[1..0] DVS Speed for down DVS 00 = 6.25 mV step / 0.333 us 01 = 6.25 mV step / 0.666 us 10 = 6.25 mV step / 1.333 us 11 = 6.25 mV step / 2.666 us DELAY[2..0] D2 Delay applied upon enabling (ms) 000b = 0 ms − 111b = 14 ms (Steps of 2 ms) http://onsemi.com 23 DBN_Time[1..0] NCP6335 Table 17. COMMAND REGISTER Name: COMMAND Address: 14h Type: RW Default: See Register map Trigger: N/A D7 D6 D5 D4 D3 D2 D1 D0 PWMVSEL0 PWMVSEL1 DVSMODE Sleep_Mode Spare = 0 Spare = 0 Spare = 0 VSELGT Bit Bit Description VSELGT VSEL Pin Gating 0 = Disabled 1 = Enabled Sleep_Mode Sleep mode 0 = Low Iq mode when EN and VSEL low 1 = Force product in sleep mode (when EN and VSEL are low) DVSMODE DVS transition mode selection 0 = Auto 1 = Forced PWM PWMVSEL1 Operating mode for VSEL internal signal = High 0 = Auto 1 = Forced PWM PWMVSEL0 Operating mode for VSEL internal signal = Low 0 = Auto 1 = Forced PWM Table 18. OUTPUT STAGE MODULE SETTINGS REGISTER Name: MODULE Address: 15h Type: RW Default: 10000000b (80h) Trigger: N/A D7 D6 D5 D4 MODUL[3..0] Bit MODUL [3..0] D3 D2 D1 D0 Spare = 0 Spare = 0 Spare = 0 Spare = 0 Bit Description Number of modules 0000 = 1 Module − 1000 ~ 1111 = 9 Modules (Steps of 1) http://onsemi.com 24 NCP6335 Table 19. LIMITS CONFIGURATION REGISTER Name: LIMCONF Adress: 16h Type: RW Default: See Register map Trigger: N/A D7 D6 IPEAK[1..0] D5 D4 TPWTH[1..0] D3 D2 D1 D0 Spare = 0 FORCERST RSTSTATUS REARM Bit REARM Bit Description Rearming of device after TSD 0: No re−arming after TSD 1: Re−arming active after TSD with no reset of I2C registers: new power−up sequence is initiated with previously programmed I2C registers values RSTSTATUS Reset Indicator Bit 0: Must be written to 0 after register reset 1: Default (loaded after Registers reset) FORCERST Force Reset Bit 0 = Default value. Self cleared to 0 1: Force reset of internal registers to default TPWTH[1..0] Thermal pre−Warning threshold settings 00 = 83°C 01 = 94°C 10 = 105°C 11 = 116°C IPEAK Inductor peak current settings 00 = 3.4 A 01 = 4.0 A 10 = 4.4 A 11 = 5.0 A http://onsemi.com 25 NCP6335 APPLICATION INFORMATION NCP6335 D1 AGND B4 D2 E1 E2 Core AVIN PVIN Supply Input 4.7 uF Thermal Protection Enable Control Input EN Voltage Selection VSEL DCDC 3.5 A A2 A1 Operating Mode Control D3 D4 E3 E4 Modular Driver SW 470 nH 2x22 uF Power Fail PGND PG B3 Interrupt PGND INTB B2 SDA B1 SCL A3 Processor I2C Control Interface C1 C2 C3 C4 Output Monitoring I@C A4 DCDC 3 MHz Controller PGND FB Processor Core Sense Rev 0.00 Figure 47. Typical Application Schematic Output Filter Design Considerations the FB pin to the system decoupling capacitor positive terminal. The output filter introduces a double pole in the system at a frequency of: f LC + 1 2 @ p @ ǸL @ C Components Selection Inductor Selection (eq. 1) The inductance of the inductor is determined by given peak−to−peak ripple current IL_PP of approximately 20% to 50% of the maximum output current IOUT_MAX for a trade−off between transient response and output ripple. The inductance corresponding to the given current ripple is: The NCP6335 internal compensation network is optimized for a typical output filter comprising a 470 nH inductor and 2 x 22 mF capacitor as describes in the basic application schematic is described by Figure 47. Voltage Sensing Considerations L+ In order to regulate power supply rail, NCP6335 should sense its output voltage. Thanks to the FB pin, the IC can support two sensing methods: • Normal case: the voltage sensing is achieved close to the output capacitor. In that case, FB is connected to the output capacitor positive terminal (voltage to regulate). • Remote sensing: In remote sensing, the power supply rail sense is made close to the system powered by the NCP6335. The voltage to system is more accurate, since PCB line impedance voltage drop is within the regulation loop. In that case, we recommend connecting ǒVIN * VOUTǓ @ VOUT V IN @ f SW @ I L_PP (eq. 2) The selected inductor must have high enough saturation current rating to be higher than the maximum peak current that is I L_MAX + I OUT_MAX ) I L_PP (eq. 3) 2 The inductor also needs to have high enough current rating based on temperature rise concern. Low DCR is good for efficiency improvement and temperature rise reduction. Table 20 shows recommended. http://onsemi.com 26 NCP6335 Table 20. INDUCTOR SELECTION Supplier Part# Value (mH) Size (mm) (L x l x T) DC Rated Current (A) DCR Max at 255C (mW) Cyntec PIFE20161B−R33−MS−39 0.33 2.0 x 1.6 x 1.2 4.6 33 Cyntec PIFE20161B−R47−MS−39 0.47 2.0 x 1.6 x 1.2 3.9 36 Cyntec PIFE25201T−R47−MS−39 0.47 2.5 x 2.0 x 1.0 4.5 41 TOKO DFE201610R−H−R47N 0.47 2.0 x 1.6 x 1.0 3.3 48 TOKO DFE201612R−H−R47N 0.47 2.0 x 1.6 x 1.2 3.8 40 TDK TFM252010A−R47M 0.47 2.5 x 2.0 x 1.0 4.5 30 TDK SPM6530T−R47M170 0.47 7.1 x 6.5 x 3.0 20 4 Output Capacitor Selection ripple and get better decoupling in the input power supply rail, ceramic capacitor is recommended due to low ESR and ESL. The minimum input capacitance regarding to the input ripple voltage VIN_PP is The output capacitor selection is determined by output voltage ripple and load transient response requirement. For high transient load performance high output capacitor value must be used. For a given peak−to−peak ripple current IL_PP in the inductor of the output filter, the output voltage ripple across the output capacitor is the sum of three components as below. C IN_MIN + (eq. 4) D+ Where VOUT_PP(C) is a ripple component from an equivalent total capacitance of the output capacitors, VOUT_PP(ESR) is a ripple component from an equivalent ESR of the output capacitors, and VOUT_PP(ESL) is a ripple component from an equivalent ESL of the output capacitors. In PWM operation mode, the three ripple components can be obtained by I L_PP 8 @ C @ f SW , V OUT_PP(ESL) + ESL ESL ) L @ V IN ǒVIN * VOUTǓ @ VOUT V IN @ f SW @ L I L_PP 8 @ V OUT_PP @ f SW V IN (eq. 11) (eq. 12) (eq. 6) The input capacitor also needs to be sufficient to protect the device from over voltage spike, and normally at least 4.7 mF capacitor is required. The input capacitor should be located as close as possible to the IC. All PGNDs are connected together to the ground terminal of the input cap which then connects to the ground plane. All PVIN are connected together to the Vbat terminal of the input cap which then connects to the Vbat plane. (eq. 7) Electrical Layout Considerations (eq. 5) Good electrical layout is a key to make sure proper operation, high efficiency, and noise reduction. Electrical layout guidelines are: • Use wide and short traces for power paths (such as PVIN, VOUT, SW, and PGND) to reduce parasitic inductance and high−frequency loop area. It is also good for efficiency improvement. • The device should be well decoupled by input capacitor and input loop area should be as small as possible to reduce parasitic inductance, input voltage spike, and noise emission. • SW node should be a large copper, but compact because it is also a noise source. • It would be good to have separated ground planes for PGND and AGND and connect the two planes at one point. Try best to avoid overlap of input ground loop (eq. 8) In applications with all ceramic output capacitors, the main ripple component of the output ripple is VOUT_PP(C). So that the minimum output capacitance can be calculated regarding to a given output ripple requirement VOUT_PP in PWM operation mode. C MIN + V OUT I IN_RMS + I OUT_MAX @ ǸD * D 2 and the peak−to−peak ripple current is I L_PP (eq. 10) In addition, the input capacitor needs to be able to absorb the input current, which has a RMS value of and V OUT_PP(ESR) + I L_PP @ ESR V IN_PP @ f SW where V OUT_PP [ V OUT_PP(C) ) V OUT_PP(ESR) ) V OUT_PP(ESL), V OUT_PP(C) + I OUT_MAX @ ǒD * D 2Ǔ (eq. 9) Input Capacitor Selection One of the input capacitor selection guides is the input voltage ripple requirement. To minimize the input voltage http://onsemi.com 27 NCP6335 • and output ground loop to prevent noise impact on output regulation. Arrange a “quiet” path for output voltage sense, and make it surrounded by a ground plane. Thermal Layout Considerations Good PCB layout helps high power dissipation from a small package with reduced temperature rise. Thermal layout guidelines are: • A four or more layers PCB board with solid ground planes is preferred for better heat dissipation. • More free vias are welcome to be around IC to connect the inner ground layers to reduce thermal impedance. • Use large area copper especially in top layer to help thermal conduction and radiation. • Use two layers for the high current paths (PVIN, PGND, SW) in order to split current in two different paths and limit PCB copper self heating. (See demo board example Figure 49) Figure 49. Demo Board Example 4.3 mm Input capacitor placed as close as possible to the IC. PVIN directly connected to Cin input capacitor, and then connected to the Vin plane. Local mini planes used on the top layer (green) and layer just below top layer (yellow) with laser vias. AVIN connected to the Vin plane just after the capacitor. AGND directly connected to the GND plane. PGND directly connected to Cin input capacitor, and then connected to the GND plane: Local mini planes used on the top layer (green) and layer just below top layer (yellow) with laser vias. SW connected to the Lout inductor with local mini planes used on the top layer (green) and layer just below top layer (yellow) with laser vias. Legend: In green are top layer planes and wires In yellow are layer1 plane and wires (just below top layer) Big circles gray are normal vias Small circles gray are top to layer1 vias 0603 22 uF 2.3 x 1.2 mm 0603 22 uF SW SW SCL PGND PGND PG SW SW EN PGND PGND INTB PVIN PVIN AVIN PVIN VSEL SDA PGND 5.4 mm AGND PGND 2 .0 x 1 .6 mm FB PIFE2016B 0.47 uH 2.3 x 1.2 mm 0603 4.7 uF 2.3 x 1.2 mm S < 18.00 mm@ Figure 48. Layout Recommendation http://onsemi.com 28 NCP6335 ORDERING INFORMATION Marking Configuration Package Shipping† NCP6335FFCT1G NCP6335F 3.5 A Transient Load Helper WLCSP20 2.02 x 1.62 mm (Pb–Free) 3000 / Tape & Reel NCP6335FFCT2G NCP6335F 3.5 A Transient Load Helper WLCSP20 2.02 x 1.62 mm (Pb–Free) 3000 / Tape & Reel NCP6335DFCT1G NCP6335D 2.5 A Stand−Alone WLCSP20 2.02 x 1.62 mm (Pb–Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Demo Board Available: The NCP6335FGEVB/D evaluation board that configures the device in typical application to supply constant voltage. http://onsemi.com 29 NCP6335 PACKAGE DIMENSIONS WLCSP20, 1.62x2.02 CASE 568AG ISSUE D PIN A1 REFERENCE ÈÈ ÈÈ D A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO THE SPHERICAL CROWNS OF THE SOLDER BALLS. B E DIM A A1 A2 A3 b D E e A2 DIE COAT (OPTIONAL) A3 0.10 C 2X 0.10 C 2X TOP VIEW DETAIL A MILLIMETERS MIN MAX 0.60 −−− 0.17 0.23 0.33 0.39 0.02 0.04 0.24 0.28 1.62 BSC 2.02 BSC 0.40 BSC A2 DETAIL A 0.10 C A RECOMMENDED SOLDERING FOOTPRINT* 0.05 C NOTE 3 A1 C SIDE VIEW SEATING PLANE A1 PACKAGE OUTLINE e/2 20X b e 0.05 C A B 0.03 C E e 0.40 PITCH D 20X C 0.40 PITCH B 0.25 DIMENSIONS: MILLIMETERS A 1 2 3 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 4 BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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