Fairchild FGA90N33ATDTU 330v, 90a pdp trench igbt Datasheet

FGA90N33ATD
330V, 90A PDP Trench IGBT
Features
General Description
• High current capability
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
• Low saturation voltage: VCE(sat) =1.1V @ IC = 20A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• PDP System
C
G
TO-3P
G C E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Units
VCES
Collector to Emitter Voltage
330
V
VGES
Gate to Emitter Voltage
± 30
V
IC
Collector Current
@ TC = 25oC
90
A
IC pulse(1)
Pulsed Collector Current
@ TC = 25oC
220
A
IC pulse(2)
Pulsed Collector Current
o
@ TC = 25 C
330
A
25oC
223
W
PD
Maximum Power Dissipation
@ TC =
Maximum Power Dissipation
@ TC = 100oC
89
W
TJ
Operating Junction Temperature
-55 to +150
o
Tstg
Storage Temperature Range
-55 to +150
oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
o
300
C
C
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction to Case
-
0.56
o
C/W
RθJC(Diode)
Thermal Resistance, Junction to Case
-
1.16
o
C/W
40
o
C/W
RθJA
Thermal Resistance, Junction to Ambient
-
Notes:
(1) Repetitive test , Pulse width=100usec , Duty=0.1
(2) Half sine wave , D<0.01, Pulse width<5usec
*IC pluse limited by max Tj
©2011 Fairchild Semiconductor Corporation
FGA90N33ATD Rev. C0
1
www.fairchildsemi.com
FGA90N33ATD 330V, 90A PDP Trench IGBT
August 2011
Device Marking
Device
Package
Packaging
Type
FGA90N33ATD
FGA90N33ATDTU
TO-3P
Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Max Qty
Qty per Tube
per Box
30ea
-
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
330
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 400μA
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
400
μA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±400
nA
IC = 250μA, VCE = VGE
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
2.5
4.0
5.5
V
IC = 20A, VGE = 15V
-
1.1
1.4
V
IC = 45A, VGE = 15V,
-
1.3
-
V
IC = 90A, VGE = 15V,
-
1.6
-
V
IC = 90A, VGE = 15V,
TC = 125oC
-
1.7
-
V
-
2200
-
pF
-
135
-
pF
-
100
-
pF
-
23
-
ns
-
40
-
ns
-
100
-
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
-
180
240
ns
td(on)
Turn-On Delay Time
-
20
-
ns
tr
Rise Time
-
40
-
ns
td(off)
Turn-Off Delay Time
-
110
-
ns
tf
Fall Time
-
250
300
ns
Qg
Total Gate Charge
-
95
-
nC
Qge
Gate to Emitter Charge
-
12
-
nC
Qgc
Gate to Collector Charge
-
40
-
nC
FGA90N33ATD Rev. C0
VCC = 200V, IC = 20A,
RG = 5Ω, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 200V, IC = 20A,
RG = 5Ω, VGE = 15V,
Resistive Load, TC = 125oC
VCE = 200V, IC = 20A,
VGE = 15V
2
www.fairchildsemi.com
FGA90N33ATD 330V, 90A PDP Trench IGBT
Package Marking and Ordering Information
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
FGA90N33ATD Rev. C0
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max
o
-
1.1
1.5
125oC
-
0.96
-
TC = 25oC
-
23
-
o
TC = 125 C
-
36
-
TC = 25oC
-
2.8
-
o
TC = 125 C
-
5.1
-
TC = 25oC
-
32
-
o
-
91
-
TC = 25 C
IF = 10A
TC =
IF =10A, dI/dt = 200A/μs
TC = 125 C
3
Units
V
ns
A
nC
www.fairchildsemi.com
FGA90N33ATD 330V, 90A PDP Trench IGBT
Electrical Characteristics of the Diode
Figure 1. Typical Output Characteristics
160
o
TC = 25 C
20V
Figure 2. Typical Output Characteristics
160
10V
o
TC = 125 C
9V
Collector Current, IC [A]
Collector Current, IC [A]
12V
8V
80
7V
40
120
7V
80
40
VGE = 6V
VGE = 6V
0
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
0
5
Figure 3. Typical Saturation Voltage
Characteristics
0
Common Emitter
VCE = 20V
o
o
TC = 25 C
120
Collector Current, IC [A]
Collector Current, IC [A]
5
160
Common Emitter
VGE = 15V
o
TC = 125 C
80
40
0
1
2
3
Collector-Emitter Voltage, VCE [V]
80
40
0
0
2
4
6
8
10
Gate-Emitter Voltage,VGE [V]
20
Common Emitter
VGE = 15V
1.8
90A
1.6
1.4
1.2
40A
1.0
IC = 20A
12
Figure 6. Saturation Voltage vs. VGE
Collector-Emitter Voltage, VCE [V]
2.0
TC = 25 C
120 T = 125oC
C
4
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector-Emitter Voltage, VCE [V]
1
2
3
4
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
160
0
8V
15V
12V
10V
15V
120
9V
20V
Common Emitter
o
TC = 25 C
16
12
8
90A
40A
4
IC = 20A
0.8
25
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
FGA90N33ATD Rev. C0
4
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGA90N33ATD 330V, 90A PDP Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Figure 8. Capacitance Characteristics
4000
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
16
Cies
3000
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
o
TC = 125 C
12
8
40A
2000
Coes
Cres
1000
4
o
TC = 25 C
90A
IC = 20A
0
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
0
0.1
20
Figure 9. Gate charge Characteristics
1
10
Collector-Emitter Voltage, VCE [V]
Figure 10. SOA Characteristics
500
15
Common Emitter
12
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
10μs
100
o
TC = 25 C
9
VCC = 100V
200V
6
3
0
30
100μs
1ms
10
10 ms
DC
1
*Notes:
0.1
o
1. TC = 25 C
o
0.01
0
20
40
60
Gate Charge, Qg [nC]
80
100
Figure 11. Turn-on Characteristics vs.
Gate Resistance
2. TJ = 150 C
3. Single Pulse
1
10
100
Collector-Emitter Voltage, VCE [V]
500
Figure 12. Turn-off Characteristics vs.
Gate Resistance
5500
200
100
1000
Switching Time [ns]
tr
Switching Time [ns]
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
o
TC = 25 C
o
TC = 125 C
td(on)
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
td(off)
tf
100
o
TC = 25 C
o
TC = 125 C
10
0
FGA90N33ATD Rev. C0
20
40
60
80
Gate Resistance, RG [Ω]
10
100
5
0
20
40
60
80
Gate Resistance, RG [Ω]
100
www.fairchildsemi.com
FGA90N33ATD 330V, 90A PDP Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
400
Figure 14. Turn-off Characteristics vs.
Collector Current
Common Emitter
VGE = 15V, RG = 5Ω
o
TC = 25 C
o
TC = 125 C
Common Emitter
V GE = 15V, R G = 15 Ω
o
T C = 25 C
tr
100
td(on)
10
0
20
40
60
tf
Switching Time [ns]
Switching Time [ns]
o
T C = 125 C
80
td(off)
100
100
100
0
20
Collector Current, IC [A]
40
60
80
Collector Current, IC [A]
100
Figure 15. Turn off Switching SOA Characteristics Figure 16. Forward Characteristics
400
200
100
Forward Current, IF [A]
Collector Current, IC [A]
100
10
o
TJ = 125 C
10
o
TJ = 25 C
1
o
TC = 25 C
Safe Operating Area
o
1
o
VGE = 15V, TC = 125 C
1
10
100
0.1
0.0
600
Collector-Emitter Voltage, VCE [V]
FGA90N33ATD Rev. C0
6
TC = 125 C
0.5
1.0
1.5
2.0
Forward Voltage, VF [V]
2.5
3.0
www.fairchildsemi.com
FGA90N33ATD 330V, 90A PDP Trench IGBT
Typical Performance Characteristics
Figure 17. Reverse Recovery Current
Figure 18. Stored Charge
60
Stored Recovery Charge, Qrr [nC]
Reverse Recovery Currnet, Irr [A]
4
200A/μs
3
2
di/dt = 100A/μs
1
0
5
10
20
30
Forward Current, IF [A]
45
200A/μs
30
di/dt = 100A/μs
15
0
40
5
10
20
30
40
Forward Current, IF [A]
Figure 19. Reverse Recovery Current
Reverse Recovery Time, trr [ns]
40
30
200A/μs
di/dt = 100A/μs
20
10
5
10
20
30
40
Forward Current, IF [A]
Figure 20.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01 single pulse
0.001
1E-5
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
FGA90N33ATD Rev. C0
7
www.fairchildsemi.com
FGA90N33ATD 330V, 90A PDP Trench IGBT
Typical Performance Characteristics
FGA90N33ATD 330V, 90A PDP Trench IGBT
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FGA90N33ATD Rev. C0
8
www.fairchildsemi.com
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I55
FGA90N33ATD Rev.C0
9
www.fairchildsemi.com
FGA90N33ATD 330V, 90A PDP Trench IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
PDP SPM™
2Cool™
FlashWriter® *
The Power Franchise®
The Right Technology for Your Success™
FPS™
Power-SPM™
AccuPower™
®
F-PFS™
PowerTrench®
Auto-SPM™
®
PowerXS™
FRFET
AX-CAP™*
Programmable Active Droop™
Global Power ResourceSM
BitSiC®
TinyBoost™
QFET®
Build it Now™
Green FPS™
TinyBuck™
QS™
CorePLUS™
Green FPS™ e-Series™
TinyCalc™
Quiet Series™
CorePOWER™
Gmax™
TinyLogic®
RapidConfigure™
CROSSVOLT™
GTO™
TINYOPTO™
CTL™
IntelliMAX™
™
TinyPower™
Current Transfer Logic™
ISOPLANAR™
TinyPWM™
Saving our world, 1mW/W/kW at a time™
DEUXPEED®
MegaBuck™
TinyWire™
Dual Cool™
SignalWise™
MICROCOUPLER™
TranSiC®
EcoSPARK®
SmartMax™
MicroFET™
TriFault Detect™
EfficentMax™
SMART START™
MicroPak™
TRUECURRENT®*
ESBC™
SPM®
MicroPak2™
μSerDes™
STEALTH™
MillerDrive™
®
SuperFET®
MotionMax™
®
SuperSOT™-3
Motion-SPM™
Fairchild
UHC®
SuperSOT™-6
mWSaver™
Fairchild Semiconductor®
Ultra FRFET™
SuperSOT™-8
OptiHiT™
FACT Quiet Series™
UniFET™
SupreMOS®
OPTOLOGIC®
FACT®
VCX™
OPTOPLANAR®
SyncFET™
FAST®
®
VisualMax™
Sync-Lock™
FastvCore™
XS™
®*
FETBench™
Similar pages