VMMK-3313 15 - 33 GHz Directional Detector in SMT Package Data Sheet Description Features The VMMK-3313 is a small and easy-to-use, broadband, directional detector operating in various frequency bands from 15 to 33 GHz with typical insertion loss of 0.5 dB. It is housed in the Avago Technologies’ industry-leading and revolutionary sub-miniature chip scale package (GaAsCap wafer scale leadless package) which is small and ultra thin yet can be handled and placed with standard 0402 pick and place assembly equipment. The VMMK-3313 provides a wide detecting power level from -5 to +30 dBm with excellent input and output return losses. A typical of 15 dB directivity is provided, and the detector requires only 1.5 V DC biasing with small current drawn of 0.17 mA. • 1 x 0.5 mm surface mount package WLP0402, 1 mm x 0.5 mm x 0.25 mm • Insertion Loss: 0.5 dB • Ultrathin (0.25 mm) • Wide frequency range: 15 to 33 GHz • Wide dynamic range • Low Insertion loss • Directivity: 11-18 dB typ. • In and output match: 50 ohm Specifications (24 GHz, Vb = 1.5 V, Zin = Zout = 50 Ω) • Bias Current: 0.17 mA typical • Detector output offset voltage: 62 mV typical • Detector Output voltage at +20 dBm: 1070 mV typical TY Applications • Point-to-Point Radio • Monitoring Power Amplifier Output Power Pin Connections (Top View) Input/ Vbias Input/ Vbias Note: “T” = Device Code “Y” = Month Code TY Detector • Power Control Loop Detector Output/ Vdet Output/ Vdet Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 70 V ESD Human Body Model = 350 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Electrical Specifications Table 1. Absolute Maximum Rating (1) Sym Parameters/Condition Unit Absolute Max Vbias Bias Voltage (RF Input) V 2 Ibias Bias Current mA 1 Pin, max CW RF Input Power (RF Input) (2) dBm +31 Tch Max Channel Temperature °C +150 Tstg Storage Temperature °C +150 Notes 1. Operation of this device above any one of these parameters may cause permanent damage 2. With the DC (typical bias) and RF applied to the device at board temperature, Tb = 25° C Table 2. DC and RF Specifications TA = 25° C, Freq = 24 GHz, Vb = 1.5 V, Zin = Zout = 50 Ω unless otherwise specified Symbol Parameters / Condition Unit Min Typical Max Ibias (1) Bias Current mA 0.11 0.17 0.25 I.L. (1) Insertion Loss at 15 GHz at 24 GHz at 33 GHz dB IRL (1) Input Return Loss dB 20 ORL (1) Output Return Loss dB 20 Dir (2) Directivity at 15 GHz at 24 GHz at 33 GHz dB Voffset (1,3) Detector Output Offset Voltage mV 45 61 75 Vdet (4) Detector Output Voltage at +20 dBm mV 0.90 1.07 1.22 0.3 0.5 0.7 11 18 12 Notes 1. Measured data obtained from wafer-probing, losses from measurement system de-embedded from final data, Vbias = 1.5 V applied through a broadband bias tee. 2. Measured by reversing the detector and applying RF power to the output port. Directivity is defined as the difference in dB between the power applied in the forward direction and the power required in the reverse direction to produce the same Vdet voltage. 3. Voffset is measured with RF input power turned off. 4. Vdet is measured with +20 dBm RF input power at 22 GHz. 2 Product Consistency Distribution Charts at 24 GHz, Vbias = 1.5 V LSL 0.11 USL 0.13 0.15 0.17 0.19 0.21 0.23 0.25 Ibias: Mean = 0.17 mA, LSL = 0.11 mA, USL = 0.25 mA LSL LSL USL 50 60 70 Voffset: Mean = 61 mV, LSL = 45 mV, USL = 75 mV USL Notes: Distribution data sample sized is based on at least 36 Kpcs taken from MPV lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 900 1000 1100 1200 Vdet_On @ Pin = +20 dBm: Mean = 1.07 V, LSL = 0.9 V, USL = 1.22 V 3 VMMK-3313 Typical Performance S-parameter data obtained using 300 mm G-S-G probe substrate; bias was brought in via broadband bias tees. Power vs. Vdet data obtained using CPW PCB (Fig.8). Losses calibrated out to the package reference plane. (TA = 25° C, Vbias = 1.5 V, Ibias = 0.14 mA, Zin = Zout = 50 Ω unless otherwise specified) 0.0 -0.2 1 S21 (dB) Output DC Voltage (V) 10 0.1 -0.6 15 GHz 24 GHz 33 GHz 0.01 -10 -5 0 5 10 15 Pin (dBm) 20 25 -0.4 -0.8 30 Figure 1. Vdet vs. Input Power 10 15 20 25 Frequency (GHz) 30 35 30 35 Figure 2. Insertion Loss vs. Frequency 0 0 -5 -10 S22 (dB) S11 (dB) -10 -15 -20 -20 -30 -25 -30 10 15 20 25 Frequency (GHz) 30 -40 35 Figure 3. Input Return Loss Output DC Voltage (V) Output DC Voltage (V) 20 25 Frequency (GHz) 10 1 0.1 25° C 85° C -40° C -10 -5 0 5 10 15 Pin (dBm) Figure 5. Pin vs. Vdet Over Temperature at 24 GHz 4 15 Figure 4. Output Return Loss 10 0.01 10 20 25 30 1 0.1 0.01 -10 1.5 V 1.2 V 1.8 V -5 0 5 10 15 Pin (dBm) Figure 6. Pin vs. Vdet Over Vbias at 24 GHz 20 25 30 Typical Scattering Parameters Data obtained with 300 mm G-S-G probing on 0.016 inch thick PCB substrate, broadband bias tees, losses calibrated out to the package reference plane. TA = 25° C, Zin = Zout = 50 Ω. Freq GHz S11 dB Mag Phase dB Mag Phase dB Mag Phase dB Mag Phase 2.0 -16.143 0.156 -90.494 -0.192 0.978 -0.747 -0.186 0.979 -0.679 -16.016 0.158 -93.644 3.0 -19.760 0.103 -96.650 -0.132 0.985 -8.728 -0.124 0.986 -8.670 -19.659 0.104 -105.358 4.0 -22.639 0.074 -100.139 -0.128 0.985 -15.231 -0.116 0.987 -15.156 -22.441 0.076 -116.420 5.0 -25.368 0.054 -99.264 -0.122 0.986 -21.092 -0.115 0.987 -21.017 -25.083 0.056 -130.972 6.0 -28.427 0.038 -93.825 -0.126 0.986 -26.725 -0.126 0.986 -26.669 -27.453 0.042 -151.611 7.0 -31.502 0.027 -78.538 -0.139 0.984 -32.188 -0.129 0.985 -32.126 -29.736 0.033 -178.623 8.0 -32.918 0.023 -48.363 -0.145 0.983 -37.503 -0.144 0.984 -37.516 -30.201 0.031 146.185 9.0 -31.634 0.026 -16.396 -0.169 0.981 -42.803 -0.155 0.982 -42.811 -29.020 0.035 115.496 10.0 -28.336 0.038 1.025 -0.174 0.980 -48.135 -0.171 0.981 -48.095 -26.897 0.045 90.525 11.0 -25.713 0.052 6.348 -0.191 0.978 -53.426 -0.185 0.979 -53.345 -24.672 0.058 75.623 12.0 -23.583 0.066 7.497 -0.204 0.977 -58.602 -0.208 0.976 -58.544 -23.312 0.068 62.771 13.0 -22.015 0.079 7.691 -0.225 0.974 -63.871 -0.226 0.974 -63.782 -21.841 0.081 52.793 14.0 -21.100 0.088 7.152 -0.247 0.972 -69.068 -0.240 0.973 -69.014 -21.002 0.089 44.150 15.0 -20.464 0.095 5.699 -0.261 0.970 -74.298 -0.261 0.970 -74.185 -20.612 0.093 34.963 16.0 -19.837 0.102 4.621 -0.288 0.967 -79.432 -0.279 0.968 -79.412 -20.070 0.099 26.214 17.0 -20.229 0.097 4.889 -0.302 0.966 -84.664 -0.300 0.966 -84.646 -20.473 0.095 19.684 18.0 -20.427 0.095 5.722 -0.311 0.965 -89.942 -0.308 0.965 -89.871 -21.130 0.088 12.443 19.0 -20.346 0.096 4.424 -0.331 0.963 -95.142 -0.334 0.962 -95.072 -21.190 0.087 3.542 20.0 -21.391 0.085 7.308 -0.346 0.961 -100.462 -0.345 0.961 -100.384 -22.651 0.074 -0.777 21.0 -22.441 0.076 10.427 -0.361 0.959 -105.667 -0.355 0.960 -105.641 -24.716 0.058 -5.533 22.0 -23.491 0.067 10.306 -0.377 0.958 -110.947 -0.376 0.958 -110.951 -25.900 0.051 -11.559 23.0 -25.304 0.054 23.895 -0.401 0.955 -116.285 -0.401 0.955 -116.288 -29.473 0.034 -2.535 24.0 -26.448 0.048 41.694 -0.416 0.953 -121.674 -0.419 0.953 -121.646 -34.943 0.018 31.366 25.0 -28.427 0.038 51.641 -0.453 0.949 -127.022 -0.455 0.949 -127.007 -35.189 0.017 74.893 26.0 -27.787 0.041 75.394 -0.472 0.947 -132.447 -0.476 0.947 -132.366 -29.168 0.035 83.707 27.0 -26.707 0.046 90.267 -0.505 0.944 -137.920 -0.505 0.944 -137.910 -25.547 0.053 87.920 28.0 -27.872 0.040 108.771 -0.517 0.942 -143.371 -0.519 0.942 -143.334 -25.161 0.055 86.868 29.0 -27.131 0.044 110.745 -0.550 0.939 -148.819 -0.546 0.939 -148.784 -22.722 0.073 68.734 30.0 -26.430 0.048 123.049 -0.576 0.936 -154.323 -0.582 0.935 -154.356 -21.650 0.083 61.896 31.0 -27.171 0.044 141.654 -0.614 0.932 -160.111 -0.612 0.932 -160.110 -21.300 0.086 51.421 32.0 -27.702 0.041 157.497 -0.643 0.929 -165.730 -0.640 0.929 -165.797 -20.211 0.098 37.365 33.0 -27.412 0.043 175.942 -0.665 0.926 -171.312 -0.664 0.926 -171.290 -19.404 0.107 18.402 34.0 -23.414 0.068 -159.594 -0.722 0.920 -177.364 -0.715 0.921 -177.358 -19.437 0.107 -1.031 35.0 -21.351 0.086 -142.243 -0.726 0.920 176.755 -0.724 0.920 176.769 -18.062 0.125 -17.686 36.0 -19.164 0.110 -145.966 -0.812 0.911 170.964 -0.814 0.911 171.148 -17.329 0.136 -32.214 37.0 -16.815 0.144 -142.957 -0.866 0.905 164.889 -0.887 0.903 165.274 -16.340 0.152 -48.123 38.0 -15.080 0.176 -138.352 -1.004 0.891 159.328 -0.935 0.898 159.556 -15.396 0.170 -62.771 39.0 -14.239 0.194 -142.217 -1.047 0.886 153.991 -1.022 0.889 154.016 -14.624 0.186 -72.930 40.0 -13.011 0.224 -143.357 -1.124 0.879 148.264 -1.084 0.883 148.305 -13.936 0.201 -85.368 5 S21 S12 S22 VMMK-3313 Biasing Information Biasing and Operation The VMMK-3313 is a 3 terminal device consisting of a “through” 50 ohm line connecting directly between the RF Input and RF Output ports and a directional coupler with a full wave detector that provides a DC output proportional to RF power input. As with any high frequency device, good grounding is required on the common port under the device for it to produce low loss in the “through” mode. A suggested PCB layout with appropriate grounding will be cover later in this application section. values chosen for the frequency of operation. All SMT components are recommended to be no larger than 0402 size. Nominal bias voltage of 1.5 V or 0.14 mA is required for proper operation. Biasing on the input is by a way of a large value resistor R1. Its value can be computed using the following equation: With only 3 terminals available, the DC bias and detected voltage are internally DC coupled to the input and output terminals respectively. The key to successful operation of the VMMK-3313 is the use of low loss bias decoupling networks connected to both the RF Input and the RF Output ports. Figure 7 shows a simple biasing circuit. Detected DC voltage is extracted on the output by a way of a large value resistor R2, in the range of 10 kΩ. Bypassing capacitors C3 and C4 are needed to prevent RF influence on the dc lines. Suggested value for bypass capacitors is 1 pF. The bias decoupling networks provide a low loss AC coupled RF path to the device, a means of biasing the device on the input, and a means of extracting the detected voltage on the output of the device. The detector needs 2 DC blocking caps, C1 and C2, on the input and output ports. This can be accomplished by printing coupled lines on the PCB or using SMT capacitors (ATC 600 series) with C1 C2 RFin RFout R1 where Vb is the supply voltage. At zero RF input power, and at 1.5 V supply bias, a nominal 63 mV offset voltage appears at the detected output port. The internal output source resistance for the detector is approximately 20 kΩ. Resistor R3 can be used as an external load resistor for the detector. Its value can be optimized for the desired Vout vs. RF input curve. Figure 8 shows a VMMK-3313 characterization PCB used to obtain the Vdet vs. Input Power characterization data from 15 to 33 GHz. For ease in broadband characterization, two external 45 MHz – 50 GHz Bias Networks (HP 11612B) were used. R2 Vb Vdet detector bias C3 C4 Component Description C1, C2 0.2 pF to 0.4 pF (ATC 600 or printed coupled lines) R1 (Vb -1.5) / 0.00014 Ω R2 10 kΩ C3, C4 1 pF R3 External load resistor (optional) Figure 7. Biasing the VMMK-3313 Detector Module 6 R1 = (Vb -1.5)/0.00014 R3 Figure 8. VMMK-3313 Characterization Board S Parameter Measurements ESD Precautions The S-parameters are measured on a 0.016 inch thick RO4003 printed circuit test board, using 300 mm G-S-G (ground signal ground) probes. Coplanar waveguide is used to provide a smooth transition form the probes to the device under test. The presence of the ground plane on top of the test board results in excellent grounding at the device under test. A combination of SOLT (Short – Open – Load – Thru) and TRL (Thru – Reflect – Line) calibration techniques are used to correct for the effects of the test board, resulting in accurate device S parameters. Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure that an ESD approved carrier is used when die are transported from one destination to another. Personal grounding is to be worn at all times when handling these devices. For more detail, refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. Package and Assembly Notes For detailed description of the device package and assembly notes, please refer to Application Note 5378. Ordering Information Part Number Devices Per Container Container VMMK-3313-BLKG 100 Antistatic Bag VMMK-3313-TR1G 5000 7” Reel VMMK-3313-TR2G 1000 7” Reel Package Dimension Outline D E A Dimensions Symbol Min (mm) Max (mm) E 0.500 0.585 D 1.004 1.085 A 0.225 0.275 Note: All dimensions are in mm Reel Orientation Device Orientation REEL USER FEED DIRECTION 4 mm Notes: “T” = Device Code “Y” = Month Code • TY TOP VIEW • TY 7 CARRIER TAPE • TY • TY USER FEED DIRECTION 8 mm END VIEW Tape Dimensions T Do Note: 1 Po B A A P1 Scale 5:1 Bo W Note: 2 F E 5° (Max) B D1 BB SECTION Note: 2 P2 Ao R0.1 5° (Max) Ko Ao = 0.73±0.05 mm Scale 5:1 Bo = 1.26±0.05 mm AA SECTION mm Ko = 0.35 +0.05 +0 Unit: mm Symbol Spec. K1 Po P1 P2 Do D1 E F 10Po W T – 4.0±0.10 4.0±0.10 2.0±0.05 1.55±0.05 0.5±0.05 1.75±0.10 3.50±0.05 40.0±0.10 8.0±0.20 0.20±0.02 Notice: 1. 10 Sprocket hole pitch cumulative tolerance is ±0.1 mm. 2. Pocket position relative to sprocket hole measured as true position of pocket not pocket hole. 3. Ao & Bo measured on a place 0.3 mm above the bottom of the pocket to top surface of the carrier. 4. Ko measured from a plane on the inside bottom of the pocket to the top surface of the carrier. 5. Carrier camber shall be not than 1 m per 100 mm through a length of 250 mm. For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. AV02-2916EN - December 26, 2012