INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK560A65Y，ITK560A65Y ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.56Ω ·Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.24mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pulsed 28 A PD Total Dissipation @TC=25℃ 30 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 4.16 ℃/W 62.5 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK560A65Y，ITK560A65Y ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=0.24mA RDS(on) Drain-Source On-Resistance IGSS MIN TYP MAX 650 V 4 V VGS= 10V; ID=3.5A 560 mΩ Gate-Source Leakage Current VGS= ±30V;VDS= 0V ±1 μA IDSS Drain-Source Leakage Current VDS= 650V; VGS= 0V 10 μA VSDF Diode forward voltage IDR =7A, VGS = 0 V 1.7 V isc website：www.iscsemi.cn 2 3 UNIT isc & iscsemi is registered trademark