Mitsubishi MGF431XG Super low noise ingaas hemt Datasheet

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF431xG
Super Low Noise InGaAs HEMT
DESCRIPTION
The MGF431xG series super-low-noise HEMT(High Electron
Mobility Transistor) is designed for use in L to K band amplifiers.
The hermetically sealed metal-ceramic package assures
minimum parasitic losses, and has a configuration suitable for
microstrip circuits.
OUTLINE DRAWING
FEATURES
Low noise figure
@ f=12GHz
MGF4316G : NF min.=0.80dB (MAX.)
MGF4319G : NF min.=0.50dB (MAX.)
High associated gain
Gs=12.0 dB (MIN.)
@ f=12GHz
APPLICATION
L to K band low noise amplifiers.
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
Refer to Bias Procedure
GD-4
ABSOLUTE MAXIMUM RATINGS
Symbol
( Ta=25°C )
Parameter
< Keep safety first in your circuit designs! >
Ratings
Unit
Mitsubishi Electric Corporation puts the maximum effort into
VGDO
Gate to drain voltage
-4
V
VGSO
Gate to source voltage
-4
V
ID
Drain current
60
mA
PT
Total power dissipation
50
mW
Tch
Channel temperature
125
°C
Tstg
Storage temperature
-65 ~ +125
°C
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
Symbol
( Ta=25°C )
Parameter
Test conditions
Limits
Min.
Typ.
Max
Unit
V(BR)GDO
Gate to drain breakdown voltage
IG= -10µA
-3
—
—
V
IGSS
Gate to source leakage current
VGS= -2V, VDS=0V
—
—
50
µA
IDSS
Saturated drain current
VGS=0V, VDS=2V
15
—
60
mA
VGS (off)
Gate to Source cut-off voltage
VDS=2V, ID=500µA
-0.1
—
-1.5
V
gm
Transconductance
VDS=2V, ID=10mA
—
75
—
mS
Gs
Associated gain
VDS=2V, ID=10mA, f=12GHz
12
13.5
—
dB
NFmin
Minimum noise figure
VDS=2V, ID=10mA, f=12GHz MGF4316G
MGF4319G
—
—
0.8
—
—
0.5
Rth (ch-a)
Thermal resistance
∆Vf method
—
625
—
*1
dB
˚C/W
*1 : Channel to ambient
MITSUBISHI
ELECTRIC
as of Apr.'98
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF431xG
Super Low Noise InGaAs HEMT
Typical Characteristics
MITSUBISHI
ELECTRIC
as of Apr.'98
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF431xG
Super Low Noise InGaAs HEMT
Typical Characteristics
S Parameters (Ta=25˚C , VDS=2V , ID=10mA )
f
S11
S21
S12
S22
MSG/MAG
K
(GHz)
Magn.
Angle
Magn.
Angle
Magn.
Angle
Magn.
Angle
(dB)
1
0.990
-22.3
5.775
158.1
0.020
71.9
0.533
-19.2
28.8
0.10
2
0.967
-40.6
5.585
140.6
0.035
61.8
0.514
-33.4
26.5
0.19
3
0.925
-53.2
5.401
128.9
0.051
53.3
0.489
-42.9
24.3
0.27
4
0.874
-70.9
5.161
111.8
0.064
42.4
0.457
-58.2
21.6
0.35
5
0.831
-88.8
4.899
96.8
0.075
29.3
0.424
-71.6
19.8
0.43
6
0.783
-105.7
4.626
80.8
0.083
19.0
0.391
-87.5
18.1
0.50
7
0.743
-120.6
4.316
67.9
0.087
9.1
0.369
-100.6
16.8
0.57
8
0.706
-132.1
4.100
56.4
0.090
4.1
0.357
-110.8
15.9
0.64
9
0.682
-144.7
3.887
43.2
0.093
-6.4
0.357
-122.3
15.1
0.69
10
0.670
-159.1
3.765
30.1
0.094
-14.3
0.351
-133.0
14.7
0.72
11
0.639
-171.8
3.617
17.5
0.095
-24.4
0.339
-143.5
14.0
0.80
12
0.617
175.3
3.526
4.5
0.096
-33.5
0.329
-154.0
13.5
0.86
13
0.591
163.1
3.421
-8.1
0.094
-42.5
0.328
-163.9
13.0
0.91
14
0.571
152.9
3.349
-17.4
0.094
-50.9
0.328
-171.3
12.7
0.95
15
0.565
140.1
3.333
-29.6
0.096
-61.1
0.343
179.5
12.7
0.96
16
0.560
125.8
3.349
-44.4
0.098
-74.1
0.351
170.5
12.7
0.98
17
0.533
109.8
3.356
-59.9
0.101
-88.8
0.337
161.8
12.5
1.01
18
0.484
91.2
3.337
-77.0
0.104
-105.1
0.310
151.6
12.1
1.11
Noise Parameters (Ta=25˚C , VDS=2V , ID=10mA )
G opt.
NFmin.(dB)
f
(GHz)
Magn.
Angle
Rn
(Ω)
4
0.76
49
12.5
0.31
0.24
18.3
8
0.59
95
4.7
0.47
0.35
15.9
12
0.48
139
2.3
0.60
0.45
13.5
14
0.41
166
1.8
0.69
0.50
12.3
18
0.34
-142
1.5
0.88
0.61
9.9
MGF4316G MGF4319G
Gs
(dB)
MITSUBISHI
ELECTRIC
as of Apr.'98
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