FW297 Power MOSFET 60V, 58mΩ, 4.5A, Dual N-Channel Features • Low On-Resistance • 4.0V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance www.onsemi.com VDSS RDS(on) Max 58mΩ@ 10V ID Max 60V 84mΩ@ 4.5V 4.5A 95mΩ@ 4.0V Electrical Connection Specifications N-Channel Absolute Maximum Ratings at Ta = 25°C Parameter 8 Symbol Value VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 4.5 A IDP 18 A PD 1.8 W PT 2.2 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C PW ≤ 10μs, duty cycle ≤ 1% (2000mm2 × 0.8mm) 1 unit, PW≤10s 2 3 Packing Type : TL Total Dissipation When mounted on ceramic substrate 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 Power Dissipation When mounted on ceramic substrate 6 Unit Drain to Source Voltage Drain Current (Pulse) 7 4 Marking (2000mm2 × 0.8mm) , PW≤10s FW297 TL LOT No. Thermal Resistance Ratings Parameter Junction to Ambient 1 unit, PW≤10s Symbol 1 * *1 Junction to Ambient 2 units, PW≤10s 1 Value RθJA 69.4 RθJA 56.8 Unit °C/W Note: * When mounted on ceramic substrate (2000mm2 × 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 April 2015 - Rev. 0 1 Publication Order Number : FW297/D FW297 Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Value min typ Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0V Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA Forward Transconductance gFS VDS=10V, ID=4.5A 4.7 RDS(on)1 ID=4.5A, VGS=10V RDS(on)2 RDS(on)3 Static Drain to Source On-State Resistance Unit max 60 V 1 μA ±10 μA 2.6 V 45 58 mΩ ID=2A, VGS=4.5V 60 84 mΩ ID=2A, VGS=4.0V 68 95 mΩ 1.2 S Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf 30 ns Total Gate Charge Qg 14 nC Gate to Source Charge Qgs 2.3 nC Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD 750 VDS=20V, f=1MHz See specified Test Circuit VDS=30V, VGS=10V, ID=4.5A pF 59 pF 47 pF 7 ns 16 ns 50 ns 2.8 IS=4.5A, VGS=0V 0.81 nC 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 10V 0V VDD=30V VIN ID=4.5A RL=6.67Ω VIN VOUT D PW=10μs D.C.≤1% G FW297 P.G 50Ω S www.onsemi.com 2 FW297 www.onsemi.com 3 FW297 www.onsemi.com 4 FW297 Package Dimensions FW297-TL-2W SOIC-8 Recommended Soldering Footprint CASE 751CR ISSUE O Unit : mm 1: Source1 2: Gate1 3: Source2 4: Gate2 5: Drain2 6: Drain2 7: Drain1 8: Drain1 ORDERING INFORMATION Device FW297-TL-2W Package Shipping Note SOIC8 SC-87, SOT-96 2,500 pcs. / Tape & Reel Pb-Free and Halogen Free † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the FW297 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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