DGNJDZ NJ4N80D-LI 4.0a 800v n-channel power mosfet Datasheet

NJ4N80 POWER MOSFET
4.0A 800V N-CHANNEL POWER MOSFET
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DESCRIPTION
The NJ4N80 is a N-channel mode power MOSFET using
advanced technology to provide costomers planar stripe and DMOS
technology. This technology is specialized in allowing a
minimum on-state resistance, and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
FEATURES
„
1
TO-220
1
* VDS = 800V
* ID = 4.0A
* RDS(ON) =3Ω@VGS = 10V.
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
TO-220F
1
TO-251
SYMBOL
1
TO-252
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ORDERING INFORMATION
Ordering Number
Package
NJ4N80-LI
NJ4N80-BL
NJ4N80F-LI
NJ4N80A-LI
NJ4N80D-TR
NJ4N80D-LI
Note:
Pin Assignment: G: Gate
TO-220
TO-220
TO-220F
TO-251
TO-252
TO-252
D: Drain
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Box
Bulk
Tube
Tube
Tape Ree
Tube
NJ4N80 POWER
MOSFET
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ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Avalanche Energy
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220
TO-220F
Power Dissipation
TO-251
SYMBOL
VDSS
VGSS
ID
IDM
EAS
EAR
dv/dt
PD
RATINGS
800
±30
4.0
16
460
13
4.0
106
36
50
UNIT
V
V
A
A
mJ
mJ
V/ns
W
W
W
TO-252
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=57mH, IAS=4A, VDD= 50V, RG=25ȍ, Starting TJ=25°C
4. ISD ”4A, di/dt ”200A/ȝs, VDD ”BVDSS, Starting TJ=25°C
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THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F
TO-251
TO-252
TO-220
TO-220F
TO-251
TO-252
SYMBOL
RATINGS
UNIT
șJA
62.5
110
°C/W
°C/W
110
1.18
3.47
2.5
2.5
°C/W
°C/W
°C/W
°C/W
°C/W
șJC
NJ4N80 POWER
MOSFET
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ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
800
Breakdown Voltage Temperature Coefficient ǻBVDSS/ǻTJ ID=250ȝA,Referenced to 25°C
VDS=800V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=640V, TC=125°C
VDS=0V ,VGS=30V
Forward
Gate-Source Leakage Current
IGSS
Reverse
VDS=0V ,VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
3.0
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=2A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25V,VGS=0V,f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=640V, VGS=10V,
Gate-Source Charge
QGS
ID=4A (Note 1,2)
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=400V, ID=4A,
RG=25ȍ (Note 1,2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =4A, VGS=0V
Body Diode Reverse Recovery Time
trr
VGS=0V, IS=4A,
dIF/dt=100A/ȝs (Note 1)
Body Diode Reverse Recovery Charge
QRR
Note: 1. Pulse Test: Pulse width ” 300μs, Duty cycle ” 2%
2. Essentially independent of operating temperature
TYP
950
MAX
UNIT
V
mV/°C
10
μA
100
μA
100
nA
-100
nA
2.3
5.0
3.0
V
ȍ
680
75
8.6
880
100
12
pF
pF
pF
19
4.2
9.1
16
45
35
35
25
nC
nC
nC
ns
ns
ns
ns
40
100
80
80
4
16
1.4
575
3.65
A
A
V
ns
ȝC
NJ4N80 POWER
MOSFET
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TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
Same Type
as D.U.T.
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
NJ4N80 POWER
MOSFET
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TEST CIRCUITS AND WAVEFORMS(Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
Time
Unclamped Inductive Switching Waveforms
NJ4N80 POWER
MOSFET
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TYPICAL CHARACTERISTICS
Drain Current, ID (μA)
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (μA)
„
200
150
100
50
150
100
50
0
0
0
0
200 400 600 800 1000 1200
Drain-Source Breakdown Voltage, BVDSS (V)
Drain Current, ID (A)
200
1
2
3
4
Gate Threshold Voltage, VTH (V)
5
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