SemiHow HRS75N07V 70v n-channel trench mosfetnull Datasheet

BVDSS = 70 V
RDS(on) typ = 6 Pȍ
HRS75N07V
ID = 48 A
70V N-Channel Trench MOSFET
TO-220F
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Excellent Switching Characteristics
1
2
3
1.Gate 2. Drain 3. Source
‰ Unrivalled Gate Charge : 80 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 6.0 Pȍ (Typ.) @VGS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
VDSS
TC=25୅ unless otherwise specified
Parameter
Drain-Source Voltage
Value
Units
70
V
Drain Current
– Continuous (TC = 25୅)
48 *
A
Drain Current
– Continuous (TC = 100୅)
30 *
A
IDM
Drain Current
– Pulsed
192 *
A
VGS
Gate-Source Voltage
ρ25
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
810
mJ
IAR
Avalanche Current
(Note 1)
48
A
EAR
Repetitive Avalanche Energy
(Note 1)
4.8
mJ
dv/dt
Peak Diode Recovery dv/dt
15
V/ns
PD
Power Dissipation (TC = 25୅)
- Derate above 25୅
38
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
ID
(Note 1)
0.3
W/୅
-55 to +150
୅
300
୅
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Typ.
Max.
RșJC
Symbol
Junction-to-Case
Parameter
--
3.3
RșJA
Junction-to-Ambient
--
62.5
Units
୅/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝͵ΖΔΖΞΓΖΣ͑ͣͥ͑͢͡
HRS75N07V
December 2014
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
2.0
--
4.0
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 24 A
--
6.0
7.5
mŸ
VGS = 0 V, ID = 250 Ꮃ
70
--
--
V
VDS = 70 V, VGS = 0 V
--
--
1
Ꮃ
VDS = 56 V, TJ = 125୅
--
--
100
Ꮃ
VGS = ρ20 V, VDS = 0 V
--
--
ρ100
Ꮂ
--
4000
5200
Ꮔ
--
350
455
Ꮔ
--
250
325
Ꮔ
--
75
160
Ꭸ
--
150
310
Ꭸ
--
150
310
Ꭸ
--
60
130
Ꭸ
--
80
105
nC
--
20
--
nC
--
30
--
nC
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 35 V, ID = 40 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 56 V, ID = 40 A,
VGS = 10 V
(Note 3,4)
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
48
ISM
Pulsed Source-Drain Diode Forward Current
--
--
192
VSD
Source-Drain Diode Forward Voltage
IS = 48 A, VGS = 0 V
--
--
1.2
V
trr
Reverse Recovery Time
--
80
--
Ꭸ
Qrr
Reverse Recovery Charge
IS = 48 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
180
--
nC
A
(Note 3)
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=450uH, IAS=48A, VDD=25V, RG=25:, Starting TJ =25qC
3. ISD”$di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝͵ΖΔΖΞΓΖΣ͑ͣͥ͑͢͡
HRS75N07V
Electrical Characteristics TJ=25 qC
HRS75N07V
Typical Characteristics
103
VGS
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
ID, Drain Current [A]
Top :
102
101
150
100
* Notes :
1. 300us Pulse Test
2. TC = 25oC
10-1 -2
10
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
IDR , Reverse Drain Current [A]
RDS(on) , [:]
Drain-Source On-Resistance
0.009
0.008
VGS = 10V
0.007
0.006
0.005
VGS = 20V
* Note : TJ = 25oC
0.004
0
20
40
60
80
100
102
150oC
* Note :
1. VGS = 0V
2. 300Ps Pulse Test
100
0.2
120
0.4
ID , Drain Current [A]
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
3000
* Note ;
1. VGS = 0 V
2. f = 1 MHz
2000
Coss
Crss
1000
0.8
1.0
1.2
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VGS, Gate-Source Voltage [V]
Capacitances [pF]
5000
0.6
VSD , Source-Drain Voltage [V]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
6000
25oC
101
VDS = 35V
10
VDS =56V
8
6
4
2
* Note : ID = 40.0 A
0
10-1
100
101
0
0
20
40
60
80
100
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝͵ΖΔΖΞΓΖΣ͑ͣͥ͑͢͡
HRS75N07V
Typical Characteristics
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
* Note :
1. VGS = 0 V
2. ID = 250 PA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
* Note :
1. VGS = 10 V
2. ID = 24 A
0.5
0.0
-100
200
-50
0
100 Ps
1 ms
10 ms
100 ms
DC
100
10-1
* Notes :
1. TC = 25 oC
10-2
10-1
200
40
ID, Drain Current [A]
Operation in This Area
is Limited by R DS(on)
30
20
10
2. TJ = 150 oC
3. Single Pulse
100
101
0
25
102
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
ZTJC(t), Thermal Response
ID, Drain Current [A]
101
150
50
10 Ps
10
100
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
2
50
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
100
0.2
* Notes :
1. ZTJC(t) = 3.3 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.1
0.05
10-1
0.02
PDM
0.01
t1
single pulse
-2
10
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝͵ΖΔΖΞΓΖΣ͑ͣͥ͑͢͡
HRS75N07V
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝͵ΖΔΖΞΓΖΣ͑ͣͥ͑͢͡
HRS75N07V
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
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HRS75N07V
Package Dimension
{vTYYWmG
±0.20
±0.20
2.54±0.20
0.70±0.20
6.68±0.20
0
12.42±0.20
3.30±0.20
2.76±0.20
1.47max
9.75±0.20
15.87±0.20
±
ij
.20
0.80±0.20
0.50±0.20
2.54typ
2.54typ
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝͵ΖΔΖΞΓΖΣ͑ͣͥ͑͢͡