ON NSS60101DMTTBG 60 v, 1 a, low vce(sat) npn transistor Datasheet

NSS60101DMT
60 V, 1 A, Low VCE(sat) NPN
Transistors
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and LED lightning,
power management…etc. In the automotive industry they can be used
in air bag deployment and in the instrument cluster. The high current
gain allows e2PowerEdge devices to be driven directly from PMU’s
control outputs, and the Linear Gain (Beta) makes them ideal
components in analog amplifiers.
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60 Volt, 1 Amp
NPN Low VCE(sat) Transistors
MARKING
DIAGRAM
WDFN6
CASE 506AN
Features
• NSV Prefix for Automotive and Other Applications Requiring
•
•
1
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
NSV60101DMTWTBG − Wettable Flanks Device
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
2 AN MG
G
3
6
5
4
AN = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Emitter Voltage
VCEO
60
Vdc
Collector−Base Voltage
VCBO
60
Vdc
Emitter−Base Voltage
VEBO
6
Vdc
IC
1
A
ICM
2
A
Collector Current − Continuous
Collector Current − Peak
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction−to−Ambient
(Notes 1 and 2)
Total Power Dissipation per Package @
TA = 25°C (Note 2)
Thermal Resistance Junction−to−Ambient
(Note 3)
Power Dissipation per Transistor @ TA = 25°C
(Note 3)
Junction and Storage Temperature Range
Symbol
Max
Unit
RqJA
55
°C/W
PD
2.27
W
RqJA
69
°C/W
Device
January, 2015 − Rev. 1
Package
Shipping†
PD
1.8
W
NSS60101DMTTBG
WDFN6
(Pb−Free)
3000/Tape &
Reel
TJ, Tstg
−55 to
+150
°C
NSV60101DMTWTBG
WDFN6
(Pb−Free)
3000/Tape &
Reel
1. Per JESD51−7 with 100 mm2 pad area and 2 oz. Cu (Dual Operation).
2. PD per Transistor when both are turned on is one half of Total PD or 1.13 Watts.
3. Per JESD51−7 with 100 mm2 pad area and 2 oz. Cu (Single−Operation).
© Semiconductor Components Industries, LLC, 2015
ORDERING INFORMATION
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS60101DMT/D
NSS60101DMT
Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Collector−Emitter Breakdown Voltage (IC = 10 mA, IB = 0)
V(BR)CEO
60
V
Collector−Base Breakdown Voltage (Ic = 0.1 mA, IE = 0)
V(BR)CBO
80
V
Emitter−Base Breakdown Voltage (IE = 0.1 mA, IC = 0)
V(BR)EBO
6
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
V
Collector Cutoff Current (VCB = 60 V, IE = 0)
ICBO
100
nA
Emitter Cutoff Current (VBE = 5.0 V)
IEBO
100
nA
ON CHARACTERISTICS
hFE
DC Current Gain (Note 4)
(IC = 100 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1 A, VCE = 2.0 V)
(IC = 2 A, VCE = 2.0 V
150
120
90
35
Collector−Emitter Saturation Voltage (Note 4)
(IC = 500 mA, IB = 50 mA)
(IC = 1 A, IB = 50 mA)
(IC = 1 A, IB = 100 mA)
VCE(sat)
Base*Emitter Saturation Voltage (Note 4)
(IC = 500 mA, IB = 50 mA)
(IC = 1 A, IB = 50 mA)
(IC = 1 A, IB = 100 mA)
VBE(sat)
Base−Emitter Turn−on Voltage (Note 4)
(IC = 500 mA, VCE = 2 V)
VBE(on)
250
240
180
55
V
0.063
0.130
0.115
0.100
0.200
0.180
V
1.0
1.0
1.1
0.9
V
DYNAMIC CHARACTERISTICS
Cobo
10
pF
fT
180
MHz
Delay Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA)
td
13
ns
Rise Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA)
tr
18
ns
Storage Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA)
ts
700
ns
Fall Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA)
tf
80
ns
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cutoff Frequency
(IC = 50 mA, VCE = 2.0 V, f = 100 MHz)
SWITCHING TIMES
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
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NSS60101DMT
TYPICAL CHARACTERISTICS
450
400
150°C
350
100°C
VCE = 2 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
450
300
25°C
250
200
−55°C
150
100
400
150°C
350
100°C
300
25°C
250
200
−55°C
150
100
50
50
0
0
0.01
0.1
0.001
10
Figure 2. DC Current Gain
10
1
IB = 20 mA
16 mA
10 mA
8.0 mA
12 mA
1.4
1
Figure 1. DC Current Gain
14 mA
1.6
0.1
IC, COLLECTOR CURRENT (A)
18 mA
1.8
0.01
IC, COLLECTOR CURRENT (A)
2.2
2.0
1
VCE(sat), COLLECTOR−EMITTER
SATURATION (V)
0.001
IC, COLLECTOR CURRENT (A)
VCE = 5 V
1.2
6.0 mA
1.0
0.8
4.0 mA
0.6
0.4
2.0 mA
0.2
0
150°C
100°C
0.1
−55°C
25°C
IC/IB = 50
0.01
0
1
2
3
4
5
6
0.001
0.01
0.1
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Figure 3. Collector Current as a Function of
Collector Emitter Voltage
Figure 4. Collector−Emitter Saturation Voltage
150°C
−55°C
0.1
VBE(sat), BASE−EMITTER
SATURATION (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION (V)
1
25°C
100°C
1.0
−55°C
25°C
0.5 100°C
150°C
IC/IB = 100
IC/IB = 20
0
0.01
0.001
0.01
0.1
0.001
1
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. Collector−Emitter Saturation Voltage
Figure 6. Base−Emitter Saturation Voltage
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3
10
NSS60101DMT
TYPICAL CHARACTERISTICS
1.0
VCE(sat), COLLECTOR−EMITTER
SATURATION (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1.2
1.0
−55°C
0.8
25°C
0.6
100°C
0.4
150°C
0.2
VCE = 2 V
0
0.001
0.01
0.1
1
10
0.7
0.6
0.5
IC = 2.0 A
0.4
IC = 1.0 A
0.3
0.2
IC = 0.5 A
0.1 I = 0.1 A
C
0
0.0001
0.001
0.01
0.1
1
IB, BASE CURRENT (A)
Figure 7. Base−Emitter “ON” Voltage
Figure 8. Collector Saturation Region
40
Cobo, OUTPUT CAPACITANCE (pF)
Cibo, INPUT CAPACITANCE (pF)
0.8
IC, COLLECTOR CURRENT (A)
240
TA = 25°C
f = 1 MHz
200
160
120
80
TA = 25°C
f = 1 MHz
35
30
25
20
15
10
5
0
40
0
1
2
3
4
5
6
0
7
5
10
15
20
25
VEB, BASE−EMITTER VOLTAGE (A)
VCB, COLLECTOR−BASE REVERSE VOLTAGE (V)
Figure 9. Input Capacitance
Figure 10. Output Capacitance
30
2.5
1000
TJ = 25°C
VCE = 2 V
ftest = 100 MHz
PD, POWER DISSIPATION (W)
fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
TA = 25°C
0.9
100
2.0
1.5
1.0
0.5
0
10
1
10
100
1000
0
25
50
75
100
IC, COLLECTOR CURRENT (mA)
TEMPERATURE (°C)
Figure 11. fT, Current Gain Bandwidth Product
Figure 12. Power Derating
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125
150
NSS60101DMT
TYPICAL CHARACTERISTICS
R(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (°C/W)
100
Duty Cycle = 0.5
0.20
10 0.10
0.05
0.02
1 0.01
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
10
100
1000
t, PULSE TIME (sec)
Figure 13. Thermal Resistance by Transistor
R(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (°C/W)
100
Duty Cycle = 0.5
0.20
10
0.10
0.05
0.02
1 0.01
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (sec)
Figure 14. Thermal Resistance for Both Transistors
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NSS60101DMT
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 506AN
ISSUE F
D
PIN ONE
REFERENCE
0.10 C
0.10 C
PLATING
ÍÍ
ÍÍ
ÍÍ
ÇÇÇ
ÇÇÇ
ÉÉÉ
ÉÉÉ
EXPOSED Cu
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
MOLD CMPD
DETAIL B
OPTIONAL
CONSTRUCTIONS
E
L
TOP VIEW
DIM
A
A1
A3
b
D
D2
E
E2
e
F
K
L
L1
L
L1
DETAIL A
A3
DETAIL B
0.10 C
ÇÇ
ÉÉ
A
B
OPTIONAL
CONSTRUCTIONS
A
0.08 C
NOTE 4
A1
C
SIDE VIEW
0.10 C A
SEATING
PLANE
MILLIMETERS
MIN
MAX
0.70
0.80
0.00
0.05
0.20 REF
0.25
0.35
2.00 BSC
0.57
0.77
2.00 BSC
0.90
1.10
0.65 BSC
0.15 BSC
0.25 REF
0.30
0.20
--0.10
SOLDERMASK DEFINED
MOUNTING FOOTPRINT
B
1.74
2X
D2
F
D2
L
1
0.77
3
1.10
6X
DETAIL A
0.47
E2
0.10 C A
2.30
B
PACKAGE
OUTLINE
6
K
4
6X
b
0.10 C A
e
0.05 C
B
1
NOTE 3
6X
BOTTOM VIEW
0.35
0.65
PITCH
DIMENSIONS: MILLIMETERS
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