ON MCH3477-TL-W Single n-channel power mosfet Datasheet

MCH3477
Power MOSFET
20V, 38mΩ, 4.5A, Single N-Channel
Features
 High Speed Switching
 1.8V Drive
 ESD Diode - Protected Gate
 Low On-Resistance
Pb-Free, Halogen Free and RoHS Compliance
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VDSS
RDS(on) Max
38 mΩ@4.5V
ID Max
20V
61 mΩ@2.5V
4.5A
99 mΩ@1.8V
Electrical Connection
N-Channel
Specifications
3
Absolute Maximum Ratings at Ta = 25C
Parameter
Drain to Source Voltage
Symbol
Value
Unit
VDSS
20
V
Gate to Source Voltage
VGSS
12
V
Drain Current (DC)
ID
4.5
A
IDP
18
A
Drain Current (Pulse)
PW10s, duty cycle1%
1
2
Power Dissipation
PD
1.0
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
55 to +150
C
When mounted on ceramic substrate
(900mm20.8mm)
Packing Type:TL
1 : Gate
2 : Source
3 : Drain
Marking
Parameter
Symbol
Value
Unit
FJ
LOTNo.
LOTNo.
Thermal Resistance Ratings
TL
Junction to Ambient
When mounted on ceramic substrate
RJA
125
C/W
(900mm20.8mm)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January 2015 - Rev. 2
1
Publication Order Number :
MCH3477/D
MCH3477
Electrical Characteristics at Ta  25C
Parameter
Symbol
Conditions
Value
min
typ
Unit
max
Drain to Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
A
Gate to Source Leakage Current
IGSS
VGS=±8V, VDS=0V
10
A
Gate Threshold Voltage
VGS(th)
VDS=10V, ID=1mA
0.4
1.3
V
Forward Transconductance
gFS
VDS=10V, ID=2A
2.0
RDS(on)1
ID=2A, VGS=4.5V
29
38
m
RDS(on)2
ID=1A, VGS=2.5V
43
61
m
RDS(on)3
ID=0.5A, VGS=1.8V
69
99
m
Static Drain to Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
20
V
3.4
S
410
pF
84
pF
Crss
59
pF
Turn-ON Delay Time
td(on)
7.5
ns
Rise Time
tr
26
ns
Turn-OFF Delay Time
td(off)
38
ns
Fall Time
tf
32
ns
Total Gate Charge
Qg
5.1
nC
Gate to Source Charge
Qgs
0.7
nC
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
VDS=10V, f=1MHz
See specified Test Circuit
VDS=10V, VGS=4.5V, ID=4.5A
1.7
IS=4.5A, VGS=0V
0.78
nC
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
4.5V
0V
VDD=10V
VIN
ID=2A
RL=5
VIN
VOUT
D
PW=10s
D.C.≤1%
G
P.G
50
S
MCH3477
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2
MCH3477
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3
MCH3477
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4
MCH3477
Package Dimensions
MCH3477-TL-H / MCH3477-TL-W
MCPH3
CASE 419AQ
ISSUE O
Unit : mm
1 : Gate
2 : Source
3 : Drain
Recommended
Soldering Footprint
2.1
0.6
0.4
0.65 0.65
ORDERING INFORMATION
Device
MCH3477-TL-H
MCH3477-TL-W
Package
Shipping
Note
MCPH3
SC-70,SOT-323
3,000 pcs. / reel
Pb-Free
and Halogen Free
Note on usage : Since the MCH3477 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
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nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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