Diodes DMP3028LK3Q 30v p-channel enhancement mode mosfet Datasheet

DMP3028LK3Q
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
-30V
Features
RDS(ON) MAX
ID MAX
TC = +25°C

25mΩ @ VGS = -10V
-27A

38mΩ @ VGS = -4.5V
-22A

100% Unclamped Inductive Switch (UIS) Test In Production
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)




Description and Applications
Mechanical Data
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:

Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3






Backlighting
DC-DC Converters
Power Management Functions

Weight: 0.33 grams (Approximate)
D
D
TO252 (DPAK)
G
D
G
S
Top View
Pin-Out
Top View
S
Equivalent Circuit
Ordering Information (Note 5)
Product
DMP3028LK3Q-13
Notes:
Case
TO252 (DPAK)
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
= Manufacturer’s Marking
P3028L= Product Type Marking Code
.
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
P3028L
YYWW
DMP3028LK3Q
Document Number DS39156 Rev.1 - 2
1 of 7
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August 2016
© Diodes Incorporated
DMP3028LK3Q
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = -10V
VDSS
Value
-30
Unit
V
VGSS
±20
V
Steady
State
TC = +25°C
TC = +70°C
ID
-27
-22
A
t<10s
TA = +25°C
TA = +70°C
ID
-11
-8.6
A
Maximum Body Diode Continuous Current
IS
IDM
-2.5
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
-40
A
Avalanche Current (Note 8) L = 0.1mH
IAS
-22
A
Avalanche Energy (Note 8) L = 0.1mH
EAS
24
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
TA = +25°C
Total Power Dissipation (Note 6)
PD
TA = +70°C
Steady state
t<10s
TA = +25°C
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
PD
Operating and Storage Temperature Range
Electrical Characteristics
W
°C/W
W
RθJC
1.8
45
29
4.5
TJ, TSTG
-55 to +150
RθJA
Thermal Resistance, Junction to Case (Note 7)
Unit
1.0
77
34
2.8
RθJA
TA = +70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 7)
Value
1.6
°C/W
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
-30
—
—
V
VGS = 0V, ID = -250µA
IDSS
—
—
-1
µA
VDS = -30V, VGS = 0V
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
IGSS
—
—
100
nA
VGS = 20V, VDS = 0V
VGS(TH)
-1
VDS = VGS, ID = -250µA
RDS(ON)
—
-2.4
25
V
Static Drain-Source On-Resistance
—
20
29
38
mΩ
VGS = -10V, ID = -7A
VGS = -4.5V, ID = -6.2A
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
VSD
—
-0.7
-1.2
V
Ciss
—
1241
—
pF
Output Capacitance
Coss
—
147
—
pF
Reverse Transfer Capacitance
Crss
—
110
—
pF
Gate Resistance
RG
—
—
Total Gate Charge (VGS = -10V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Qg
Qg
—
—
15
22
Ω
nC
11
—
—
Qgs
—
3.5
—
nC
Qgd
—
—
—
—
—
4.7
9.7
17.1
60.5
40.4
—
—
—
—
—
nC
ns
ns
ns
ns
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
tD(ON)
tR
tD(OFF)
tF
nC
VGS = 0V, IS = -2.1A
VDS = -15V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -15V, ID = -7A
VGS = -10V, VDD = -15V,
RGEN = 6Ω
ID = -7A
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMP3028LK3Q
Document Number DS39156 Rev.1 - 2
2 of 7
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August 2016
© Diodes Incorporated
DMP3028LK3Q
20
20
VGS = -10V
VGS = -3.5V
VDS = -5.0V
VGS = -4.5V
15
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VGS = -4.0V
VGS = -5.0V
VGS = -3.0V
10
5
15
10
5
TA = 85C
TA = 150C
TA = 125C
VGS = -2.5V
TA = 25C
T A = -55C
0
1
2
3
4
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0.05
)

(
E
C
N
A
T
S
IS
E
R
-N
O
E
C
R
U
O
S
-N
IA
R
D
, )N
0.04
VGS = -4.5V
0.03
VGS = -10V
0.02
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
0.01
1
2
3
4
-V GS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
0.05
VGS = -4.5V
TA = 125
C
0.04
TA = 150C
TA = 85°C
TA = 25°C
0.03
TA = -55°C
0.02
0.01
O
(S
D
0
R
0
5
10
15
20
25
-ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
0
0
2
4
6
8 10 12 14 16 18
-ID, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
20
0.05
R DS(on), DRAIN-SOURCE ON-RESISTANCE ()
1.8
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0
VGS = -10V
ID = -10A
1.6
1.4
VGS = -5V
ID = -5A
1.2
1
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
DMP3028LK3Q
Document Number DS39156 Rev.1 - 2
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0.04
VGS = -5.0V
ID = -5.0A
0.03
VGS = -10V
ID = -10A
0.02
0.01
0
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
August 2016
© Diodes Incorporated
DMP3028LK3Q
20
VGS(TH), GATE THRESHOLD VOLTAGE (V)
3
)V
(
E
G
A
T
L
O
V
D
L
O
H
S
E
R
H
T
E
T
A
G
, )H
-IS, SOURCE CURRENT (A)
2.5
2
-ID =1mA
-ID= 250µA
1.5
1
15
10
TA= 150C
TA= 125C
5
TA= 85C
TA= 25C
0.5
T
(S
G
TA= -55C
V
0
0
-50
0
-25
0
25
50
75 100 125 150
TA , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
10
10000
TA = 150°C
9
-VGS, GATE-SOURCE VOLTAGE (V)
-I
-IDSS, LEAKAGE CURRENT (nA)
)A
n 1000
(
T
N
E
R
R 100
U
C
E
G
A
K
10
A
E
L
,S
S
D
0.2
0.4
0.6
0.8
1
1.2
-V SD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
TA = 125°C
TA = 85°C
TA = 25°C
1
8
7
6
VDS = -15V
ID = -7A
5
4
3
2
1
0.1
0
0
5
10
15
20
25
30
-VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
10000
0
5
10
15
20
Qg , TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
25
100
)A
(
T
N
E
R
R
U
C
N
IA
R
D
,D
I
-ID, DRAIN CURRENT (A)
CT, JUNCTION CAPACITANCE (pF)
R DS(ON)
Limited
Ciss
1000
100
10
DC
PW = 10s
1
PW = 1s
PW = 100ms
PW = 10ms
0.1 TJ(max) = 150°C
PW = 1ms
PW = 100µs
TA = 25°C
10
VGS = -10V
Single Pulse
0.01 DUT on 1 * MRP Board
0
5
10
15
20
25
-V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 Typical Junction Capacitance
DMP3028LK3Q
Document Number DS39156 Rev.1 - 2
30
4 of 7
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0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
August 2016
© Diodes Incorporated
DMP3028LK3Q
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RR
= r(t)*
RθJC
θJC(t)(t)
= r(t)
*R
thjc
0.001
0.000001
thjc
o
RθJC = 4 C/W
Single Pulse
Rthjc = 4°C/W
Duty
Cycle,
D =Dt1/t2
Duty
Cycle,
= t1/ t2
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
DMP3028LK3Q
Document Number DS39156 Rev.1 - 2
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© Diodes Incorporated
DMP3028LK3Q
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO252 (DPAK)
E
A
b3
7° ± 1°
c
L3
D
A2
L4
e
H
b(3x)
b2(2x)
Gauge Plane
0.508
D1
E1
Seating Plane
a
L
A1
2.74REF
TO252 (DPAK)
Dim Min Max Typ
A 2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
b 0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c
0.45 0.58 0.531
D 6.00 6.20 6.10
D1 5.21
e
2.286
E 6.45 6.70 6.58
E1 4.32
H 9.40 10.41 9.91
L 1.40 1.78 1.59
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
a
0°
10°
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO252 (DPAK)
X1
Y1
Dimensions
C
X
X1
Y
Y1
Y2
Y2
C
Value (in mm)
4.572
1.060
5.632
2.600
5.700
10.700
Y
X
DMP3028LK3Q
Document Number DS39156 Rev.1 - 2
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DMP3028LK3Q
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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