CYSTEKEC BTD2498N3 High voltage npn epitaxial planar transistor Datasheet

Spec. No. : C899N3
Issued Date : 2009.12.23
Revised Date :
Page No. : 1/6
CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
Built-in Base Resistor
BTD2498N3
Description
• High breakdown voltage. (BVCEO=400V)
• Low saturation voltage, typical VCE(sat) =0.13V at Ic/IB =20mA/1mA.
• Complementary to BTB1498N3
• Pb-free package
Equivalent Circuit
Outline
BTD2498N3
SOT-23
B : Base
C : Collector
E : Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
400
400
7
300
225
556
150
-55~+150
V
V
V
mA
mW
°C/W
°C
°C
BTD2498N3
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C899N3
Issued Date : 2009.12.23
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICER
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE
*hFE
R
fT
Cob
Min.
400
400
7
50
50
0.7
-
Typ.
0.13
0.11
0.16
100
13
Max.
100
10
100
0.18
0.18
0.3
3.7
270
1.3
-
Unit
V
V
V
nA
nA
nA
V
V
V
V
kΩ
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=400V
VCE=300V, REB=4kΩ
VEB=6V
IC=20mA, IB=1mA
IC=50mA, IB=5mA
IC=100mA, IB=10mA
IC=20mA, IB=2mA
VCE=10V, IC=10mA
VCE=10V, IC=100mA
VCE=10V, IC=10mA, f=5MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTD2498N3
Package
SOT-23
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Recommended Soldering Footprint
BTD2498N3
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C899N3
Issued Date : 2009.12.23
Revised Date :
Page No. : 3/6
Typical Characteristics
Current Gian vs Collector Current
Saturation Voltage vs Collector Current
100000
Saturation Voltage---(mV)
Current Gain---HFE
100
VCE = 10V
VCE = 5V
10000
VCE(SAT) @ IC = 20IB
1000
100
VCE(SAT) @ IC =10IB
10
10
1
10
100
Collector Current---IC(mA)
1
1000
1000
Power Derating Curve
Saturation Voltage vs Collector Current
0.25
Power Dissipation---PD(W)
10000
Saturation Voltage---(mV)
10
100
Collector Current---IC(mA)
IC=10IB
IC=20IB
1000
0.2
0.15
0.1
0.05
VBE(SAT)
0
100
1
BTD2498N3
10
100
Collector Current---IC(mA)
1000
0
Preliminary
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C899N3
Issued Date : 2009.12.23
Revised Date :
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
BTD2498N3
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C899N3
Issued Date : 2009.12.23
Revised Date :
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTD2498N3
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C899N3
Issued Date : 2009.12.23
Revised Date :
Page No. : 6/6
SOT-23 Dimension
Marking:
A
L
DH
TE
3
B
S
2
1
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
D
K
H
Style: Pin 1.Base 2.Emitter 3.Collector
J
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.85
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2498N3
Preliminary
CYStek Product Specification
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