SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD ESDAxxL SERIES DUAL TRANSIL TVS ARRAY Features z z z z z z z z z SOT-23 Package 2 Unidirectional Transil functions Peak Power Dissipation 300W @8 x 20 us Pulse Low Leakage Fast Response Time < 1 ns Protects RS232 I/O Port ESD Protection to IEC 61000-4-2 Level 4,15KV(Air), 8KV(Contanct) 16KV Human Body Model ESD Requirements RoHS Compliant in Lead-Free Versions Applications z Computers z Printers z Communication Systems Absolute Maximum Ratings Symbol Parameter Value Units PPP Peak Pulse Power (tp = 8/20μs) 300 W TL Maximum lead temperature for soldering during 10s 260 °C Tstg Storage Temperature Range -55 to +15 °C Top Operating Temperature Range -40 to +125 °C Tj Maximum junction temperature 150 °C Electrostatic discharge VPP MIL STD 883C -Method 3015-6 25 IEC61000-4-2 air discharge 16 IEC61000-4-2 contact discharge 9 kv ESDAxxL SERIES Electrical Characteristics Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current IPP Peak pulse current αT Voltage temperature coefficient VF Forward voltage drop C Capacitance Rd Dynamic resistance Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Part Numbers VBR VF Rd αT C Typ.(1) Max.(2) Typ. 0v bias IR VRM IRM v mA v µA v mA mΩ 10-4/°C pF 5.3 5.9 1 3 2 1.25 200 280 5 220 ESDA6V1L 6.1 7.2 1 5.25 20 1.25 200 350 6 140 ESDA14V2L 14.2 15.8 1 12 5 1.25 200 650 10 90 25 30 1 24 1 1.2 10 1000 10 50 Min. Max. v ESDA5V3L ESDA25L 1.Square pulse IPP=15A,tp=2.5µs Max. IF 2.△VBR=aT*(Tamb-25°C)*VBR(25°C) Fig1.Peak power dissipation versus Initial junction temperature Fig2. Peak pulse power versus exponential pulse duration(Tj initial=25°C) ESDAxxL SERIES Fig3. Clamping voltage versus peak pulse current(Tj initial=25°C, rectangular Fig4. Capacitance versus reverse Applied voltage Waveform,tp=2.5μs) Fig5.Relative variation of leakage current Versus junction temperature Fig6. Peak forward voltage drop versus peak forward current Package Dimensions