LED Chip Infrared Product No: Radiation Infrared Type AlGaAs OPC9000-32 Electrodes N(Cathode)up Typ320 Unit: um N Electrode Typ160 Φ140 N AlGaAs Cladding Layer GaAs Active Layer P AlGaAs Cladding Layer Emission Area P Electrode Physical Characteristics & Structure Material: AlGaAs Bond Pad Size: 140um diameter Junction Size: 320um x 320um Anode Metalization: Gold Alloy Thickness: 160um Cathode Metalization: Gold Alloy Electrical & Optical Characteristics (Ta = 25ºC) I T EM S SYM BOL CO ND ITI ON S MI N T YP MAX UNIT Forward Voltage Reverse Voltage Radiated Power* Peak Wavelength Spectral Bandwidth at 50% Vf Vr Φe λp ∆λ If=20mA Ir=10uA If=20mA If=20mA If=20mA -5 2.5 --- ---900 60 1.6 ----- V V mW nm nm * LED chip is mounted on TO-18 gold header without resin coating. Absolute Maximum Ratings (Ta = 25ºC) Continuous Maximum Forward Current: 100mA (DC) Reverse Voltage: 5V (IR=10uA) Storage Temperature while on mylar membrane: 0 to 40 ºC after removal from mylar membrane: -30 to 100 ºC We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Global Headquarters, 3 Northway Lane North, Latham, NY 12110, USA TOLL FREE: 1-800-984-5337 • PHONE: 518-956-2980 • FAX: www.marktechopto.com 518-785-4725 • EMAIL: [email protected] 2014-04-24 1