MAGX-011086 GaN Wideband Transistor 28 V, 4 W DC - 6 GHz Rev. V1 Features GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 6 GHz 28 V Operation 9 dB Gain at 5.8 GHz 45% Drain Efficiency at 5.8 GHz 100% RF Tested Thermally-Enhanced 4 mm 24-Lead QFN RoHS* Compliant Description The MAGX-011086 GaN HEMT is a wideband transistor optimized for DC - 6 GHz operation in a user friendly package ideal for high bandwidth applications. The device has been designed for saturated and linear operation with output power levels of 4 W (36 dBm) in an industry standard, low inductance, surface mount QFN package. The pads of the package form a coplanar launch that naturally absorbs lead parasitics and features a small PCB outline for space constrained applications. The MAGX-011086 is ideally suited for Wireless LAN, High Dynamic Range LNA’s, broadband general purpose, land mobile radio, defense communications, wireless infrastructure, and ISM applications. Functional Schematic N/C N/C N/C N/C N/C N/C 24 23 22 21 20 19 N/C 1 18 N/C N/C 2 17 N/C RFIN / VG 3 RFIN / VG 4 N/C 5 N/C 6 16 RFOUT / VD Input Match 15 RFOUT / VD 14 N/C 25 Paddle 13 N/C 7 8 9 10 11 12 N/C N/C N/C N/C N/C N/C Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology. Pin Configuration1 Ordering Information Part Number Package MAGX-011086 Bulk Quantity MAGX-011086-SMBPPR Sample Board Pin No. Pin Name Function 1-2 3-4 5 -14 15 - 16 17 - 24 25 N/C RFIN / VG N/C RFOUT / VD N/C Paddle2 No Connection RF Input / Gate No Connection RF Output / Drain No Connection Ground / Source 1. All no connection pins may be left floating or grounded. 2. The exposed pad centered on the package bottom must be connected to RF and DC ground and provide a low thermal resistance heat path. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-011086 GaN Wideband Transistor 28 V, 4 W DC - 6 GHz Rev. V1 RF Electrical Specifications: TA = 25C, VDS = 28 V, IDQ = 50 mA Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 5.8 GHz GSS - 11 - dB Saturated Output Power CW, 5.8 GHz PSAT - 37 - dBm Drain Efficiency at Saturation CW, 5.8 GHz hSAT - 50 - % Power Gain 5.8 GHz, POUT = 4 W GP 8 9 - dB Drain Efficiency 5.8 GHz, POUT = 4 W h 40 45 - % Ruggedness: Output Mismatch All phase angles Y VSWR = 10:1, No Device Damage DC Electrical Characteristics: TA = 25C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 100 V IDLK - - 2 mA Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - - 1 mA Gate Threshold Voltage VDS = +28 V, ID = 2 mA VT -2.5 -1.5 -0.5 V Gate Quiescent Voltage VDS = +28 V, ID = 50 mA VGSQ -2.1 -1.2 -0.3 V On Resistance VDS = +2 V, ID = 15 mA RON - 2.0 - W Saturated Drain Current VDS = 7 V, Pulse Width 300 µs ID(SAT) - 1.4 - A 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-011086 GaN Wideband Transistor 28 V, 4 W DC - 6 GHz Rev. V1 Absolute Maximum Ratings3,4, 5 Parameter Absolute Max. Drain-Source Voltage, VDS 100 V Gate-Source Voltage, VGS -10 V to 3 V Gate Current, IG 4 mA Junction Temperature, TJ +200°C Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 5. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours. Thermal Characteristics6, 7 Parameter Test Conditions Symbol Typ. Units Thermal Resistance VDS = 28 V, TJ = 200°C ӨJC 12.5 °C/W 6. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple embedded in heat-sink. 7. The thermal resistance of the mounting configuration must be added to the device ӨJC, for proper TJ calculation during operation. The recommended via pattern, shown on page 6, on a 20 mil thick, 1oz plated copper, PCB contributes an additional 6.6 °C/W to the typical value. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these class 1A devices. 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-011086 GaN Wideband Transistor 28 V, 4 W DC - 6 GHz Rev. V1 Load-Pull Performance: VDS = 28 V, IDQ = 50 mA, TA = 25°C Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance Frequency ZS (W) ZL (W) PSAT (W) GSS (dB) Drain Efficiency (MHz) 900 4.0 + j8.4 31.9 + j41.2 5.8 24.6 65 2500 4.0 - j13.1 12.5 + j18.0 5.1 19.5 63 3500 6.8 - j26.8 10.1 + j9.3 5.0 16.0 57 4000 13.4 - j37.8 9.5 + j4.7 5.0 15.3 56 5000 67.4 - j33.2 8.2 + j1.2 5.0 13.8 55 5800 19.4 + j0.5 7.7 - j8.4 5.0 12.0 55 Impedance Reference ZS @ PSAT (%) ZS and ZL vs. Frequency ZL 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-011086 GaN Wideband Transistor 28 V, 4 W DC - 6 GHz Rev. V1 Load-Pull Performance: VDS = 28 V, IDQ = 50 mA, TA = 25°C Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance Drain Efficiency vs. Output Power Gain vs. Output Power 70 30 Drain Efficiency (%) Gain (dB) 25 20 15 900 MHz 2500 MHz 60 900 MHz 50 3500 MHz 2500 MHz 40 30 20 10 3500 MHz 10 20 25 30 35 0 20 40 25 Gain vs. Output Power 35 40 35 40 Drain Efficiency vs. Output Power 20 Drain Efficiency (%) 70 15 Gain (dB) 30 Output Power (dBm) Output Power (dBm) 10 4000 MHz 5000 MHz 60 4000 MHz 5000 MHz 50 5800 MHz 40 30 20 10 5800 MHz 5 20 25 30 Output Power (dBm) 35 40 0 20 25 30 Output Power (dBm) 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-011086 GaN Wideband Transistor 28 V, 4 W DC - 6 GHz Rev. V1 Evaluation Board and Recommended Tuning Solution 5.8 GHz Narrowband Circuit VGS C1 1.0 mF C2 0.1 mF C3 0.01 mF VDS C4 1000 pF C8 1000pF R1 200 W C7 0.01 mF C6 0.1 mF C5 1.0 mF C10 3.3 pF C11 3.3 pF C9 4.7 pF C12 3.3 pF MAGX-011086 RF In C13 0.2 pF C14 0.5 pF C16 3.3 pF C17 0.3 pF RF Out C15 1.2 pF Description Bias Sequencing Parts measured on evaluation board (20-mil thick RO4350). The PCB’s electrical and thermal ground is provided using a standard-plated densely packed via hole array (see recommended via pattern). Turning the device ON Matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. Recommended tuning solution component placement, transmission lines, and details are shown on the next page. 1. Set VGS beyond pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (28 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. Recommended Via Pattern (All dimensions shown as inches) 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-011086 GaN Wideband Transistor 28 V, 4 W DC - 6 GHz Rev. V1 Evaluation Board and Recommended Tuning Solution 5.8 GHz Narrowband Circuit Parts list Reference Value Tolerance Manufacturer Part Number C1, C5 1.0 µF 10 % AVX 12101C105KAT2A C2, C6 0.1 µF 10 % Kemet C1206C104K1RACTU C3, C7 0.01 µF 10 % AVX 12061C103KAT2A C4, C8 1000 pF 10 % Kemet C0805C102K1RACTU C9 4.7 pF 0.1 pF ATC ATC800A4R7B250 C10, C11, C12, C16 3.3 pF 0.1 pF ATC ATC800A3R3B250 C13 0.2 pF 0.1 pF ATC ATC800A0R2B250 C14 0.5 pF 0.1 pF ATC ATC800A0R5B250 C15 1.2 pF 0.1 pF ATC ATC800A1R2B250 C17 0.3 pF 0.1 pF ATC ATC800A0R3B250 R1 200 Ω 1% Panasonic ERJ-6ENF2000V RF Connector SMA Amphenol-Connex 132150 DC Connector D-Subminiature ERNI 284525 PCB RO4350 Rogers Corp 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-011086 GaN Wideband Transistor 28 V, 4 W DC - 6 GHz Rev. V1 Typical Performance as measured in the 5.8 GHz evaluation board: CW, VDS = 28 V, IDQ = 50 mA (unless noted) Gain vs. Output Power over Temperature Drain Efficiency vs. Output Power over Temperature 14 50 Drain Efficiency (%) 12 Gain (dB) 10 8 6 +25°C -40°C +85°C 4 2 15 20 +25°C -40°C +85°C 40 30 20 10 25 30 35 0 15 40 20 25 30 35 Output Power (dBm) Output Power (dBm) Quiescent VGS vs. Temperature -1.0 -1.1 VGSQ (V) -1.2 -1.3 25 mA 50 mA 75 mA -1.4 -1.5 -1.6 -50 -25 0 25 50 75 100 Temperature (°C) 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 40 MAGX-011086 GaN Wideband Transistor 28 V, 4 W DC - 6 GHz Rev. V1 Typical 2-Tone Performance as measured in the 5.8 GHz evaluation board: 1 MHz Tone Spacing, VDS = 28 V, IDQ = 50 mA, TA = 25°C (unless noted) 2-Tone IMD3 vs. Output Power vs. Quiescent Current 2-Tone Gain vs. Output Power vs. Quiescent Current -10 12 13mA 25mA 38mA 50mA 75mA -15 11 -25 Gain (dB) IMD (dBc) -20 -30 10 9 -35 8 -40 -45 0.1 1 7 0.1 10 13mA 25mA 38mA 50mA 75mA 1 POUT (W-PEP) POUT (W-PEP) 2-Tone IMD vs. Output Power -10 IMD (dBc) -20 -30 -IMD3 +IMD3 -IMD5 +IMD5 -IMD7 +IMD7 -40 -50 -60 0.1 1 10 POUT (W-PEP) 9 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 10 MAGX-011086 GaN Wideband Transistor 28 V, 4 W DC - 6 GHz Lead Free 4 mm 24 Lead QFN Plastic Package† All dimensions shown as inches [millimeters] † Meets JEDEC moisture sensitivity level 3 requirements. Plating is Matte Sn 10 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Rev. V1