CYSTEKEC BSS123BKN3 N-channel enhancement mode mosfet Datasheet

CYStech Electronics Corp.
Spec. No. : C591N3
Issued Date : 2016.12.07
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode MOSFET
BSS123BKN3
BVDSS
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=100mA
RDS(ON)@VGS=4.5V, ID=100mA
100V
0.19A
2.8Ω(typ)
3.0Ω(typ)
Features
• ESD protected gate
• High speed switching
• Pb-free lead plating and halogen-free package
Symbol
• Easily designed drive circuits
• Low-voltage drive
• Easy to use in parallel
Outline
SOT-23
BSS123BKN3
D
D
G
S
G:Gate
S:Source
D:Drain
S
G
Ordering Information
Device
BSS123BKN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
BSS123BKN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C591N3
Issued Date : 2016.12.07
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VDSS
VGSS
ID
IDM
PD
Tj
Tstg
Limits
100
±20
190
152
760
300
-55~+150
-55~+150
Unit
V
mA
*1
*2
mW
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction to Ambient
Symbol
RθJA
Value
416
*2
Unit
°C/W
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch
Electrical Characteristics (Ta=25°C)
Symbol
Static
BVDSS*
VGS(th)
IGSS
IDSS
RDS(ON)*
GFS
Dynamic
Ciss
Coss
Crss
*tr
*td
*tstg
*tf
*Qg
*Qgs
*Qgd
Body Diode
*VSD
Min.
Typ.
Max.
100
1.0
100
2.8
3.0
-
2.5
±10
1
5
5.6
7.0
-
-
26
11
3.1
4.2
15.2
10.2
18.8
1.85
0.72
0.17
39
16
4.6
6.3
22.8
15.3
28.2
2.8
1.1
0.26
-
0.9
1.3
Unit
Test Conditions
mS
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=±16V, VDS=0V
VDS=80V, VGS=0V
VDS=80V, VGS=0V, Tj=55°C
ID=100mA, VGS=10V
ID=100mA, VGS=4.5V
VDS=10V, ID=100mA
pF
VDS=25V, VGS=0V, f=1MHz
ns
VDS=50V, ID=0.26A, VGS=10V, RG=6Ω
nC
VDS=80V, ID=0.26A, VGS=10V
V
IS=0.34A
V
μA
Ω
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
BSS123BKN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C591N3
Issued Date : 2016.12.07
Revised Date :
Page No. : 3/9
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
BVDSS, Normalized Drain-Source
Breakdown Voltage
0.8
ID, Drain Current (A)
0.7
0.6
VGS=3.5V
0.5
0.4
10V, 9V,8V,7V,6V,5V,4.5V,4V
0.3
0.2
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.1
0.4
0.0
0
1
2
3
4
5
6
7
8
9
-75 -50 -25
10
VDS, Drain-Source Voltage(V)
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
10
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(Ω)
1.2
VGS=4.5V
VGS=10V
1
Tj=25°C
VGS=0V
1
0.8
Tj=150°C
0.6
0.4
0.2
0.01
0.1
ID, Drain Current(A)
1
0
0.1
0.2
0.3
0.4 0.5
0.6
IDR , Reverse Drain Current(A)
0.7
0.8
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
9
R DS(on), Normalized Static DrainSource On-State Resistance
10
R DS(on), Static Drain-Source OnState Resistance(Ω)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=100mA
8
7
6
5
4
3
2
2
VGS=10V, ID=100mA
RDS(ON) @Tj=25°C:2.8Ω typ.
1.6
1.2
0.8
VGS=4.5V, ID=100mA
RDS(ON) @Tj=25°C : 3.0Ω typ.
0.4
1
0
0
0
BSS123BKN3
2
4
6
VGS, Gate-Source Voltage(V)
8
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C591N3
Issued Date : 2016.12.07
Revised Date :
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
100
Capacitance---(pF)
Ciss
C oss
10
Crss
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
1
0
5
10
15 20 25 30 35 40
VDS, Drain-Source Voltage(V)
45
-75 -50 -25
50
50
75 100 125 150 175
Gate Charge Characteristics
1
10
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
25
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
0.1
VDS=10V
Ta=25°C
Pulsed
6
4
ID=0.26A
0
0.01
0.1
ID, Drain Current(A)
10ms
0.01
TA=25°C, Tj=150°C
VGS=10V, RθJA=416°C/W
Single Pulse
1
1
1
1
1/5 2/5 3/5 4/5
Qg, Total Gate Charge(nC)
2
0.25
100μs
1ms
0.1
1
Maximum Drain Current vs Junction Temperature
ID, Maximum Drain Current(A)
RDSON
Limited
1/5 2/5 3/5 4/5
1
1
100ms
1s
DC
0.2
0.15
0.1
0.05
TA=25°C, VGS=10V, RθJA=416°C/W
0
0.001
BSS123BKN3
VDS=80V
2
Maximum Safe Operating Area
0.01
VDS=20V
8
0
0.01
0.001
ID, Drain Current(A)
0
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C591N3
Issued Date : 2016.12.07
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
0.8
50
VDS=10V
45
TJ(MAX) =150°C
TA=25°C
RθJA=416°C/W
40
0.6
35
0.5
Power (W)
ID, Drain Current(A)
0.7
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
0.4
0.3
30
25
20
15
0.2
10
0.1
5
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
0
0.0001
0.001
0.01
0.1
1
Pulse Width(s)
10
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=416°C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
BSS123BKN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C591N3
Issued Date : 2016.12.07
Revised Date :
Page No. : 6/9
Recommended Soldering Footprint
BSS123BKN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C591N3
Issued Date : 2016.12.07
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
BSS123BKN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C591N3
Issued Date : 2016.12.07
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BSS123BKN3
CYStek Product Specification
Spec. No. : C591N3
Issued Date : 2016.12.07
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
123BK
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Gate 2.Source 3.Drain
*:Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BSS123BKN3
CYStek Product Specification
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