Preliminary Technical Information Linear Power MOSFET IXTK46N50L With Extended FBSOA IXTX46N50L VDSS ID25 N-Channel Enhancement Mode RDS(on) = 500 = 46 ≤ 0.16 V A Ω TO-264 (IXTK) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM 46 A 100 A IAR TC = 25°C 46 A EAR TC = 25°C 60 mJ 1.5 J 700 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C EAS PD TC = 25°C TJ TL 1.6 mm (0.063 in) from case for 10 s 300 °C TSOLD Plastic body for 10 s 260 °C Md Fc Mounting torque Mounting force Weight PLUS247 TO-264 (TO-264) (PLUS247TM) 1.13/10 Nm/lb.in. 20...120/4.5...27 N/lb. 6 10 g g G D S (TAB) PLUS247 (IXTX) TAB G = Gate S = Source D = Drain TAB = Drain Features z z Designed for linear operation International standard package z Unclamped Inductive switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions BVDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 μA IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 500 3 TJ = 25°C TJ = 125°C VGS = 20 V, ID = 0.5 ID25, Note 1 Applications z V z V z ±200 nA z 50 1 μA mA z 0.16 Ω 6 z Programmable loads Current regulators DC-DC converters Battery chargers DC choppers Temperature and lighting controls Advantages z z z Easy to mount Space savings High power density IXYS reserves the right to change limits, test conditions, and dimensions. © 2007 IXYS CORPORATION, All rights reserved DS99350A(03/07) IXTK46N50L IXTX46N50L Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 • ID25, Note 1 7 10 13 S 7000 pF 900 pF Crss 170 pF td(on) 40 ns 50 ns 80 ns 42 ns 260 nC 85 nC 125 nC Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 15 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 2 Ω (External), tf Qg(on) Qgs VGS = 15 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd TO-264 (IXTK) Outline 0.18 °C/W RthJC RthCS °C/W 0.15 Safe Operating Area Specification Symbol Test Conditions Min. SOA VDS = 400 V, ID = 0.6 A, TC = 90°C 240 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM Typ. Max. W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 46 A Repetitive; pulse width limited by TJM 100 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = IS, -di/dt = 100 A/μs, VR = 100V 600 PLUS247TM (IXTX) Outline ns Note 1: Pulse test, t < 300 μs, duty cycle, d ≤ 2 % Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK46N50L IXTX46N50L Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 50 100 VGS = 20V 18V 16V 45 40 14V 70 I D - Amperes 12V 30 25 20 15 14V 60 50 40 12V 30 10V 10 20 9V 8V 7V 5 0 0 1 2 3 4 5 6 7 10V 9V 8V 10 0 8 9 0 3 6 9 Fig. 3. Output Characteristics @ 125ºC 21 24 27 30 VGS = 20V 2.8 14V R D S (on) - Normalized I D - Amperes 18 3.1 VGS = 20V 18V 16V 40 15 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 50 45 12 V D S - Volts V D S - Volts 35 12V 30 25 20 10V 15 9V 8V 7V 5 0 2.5 2.2 I D = 46A 1.9 1.6 I D = 23A 1.3 1.0 10 0.7 0.4 0 2 4 6 8 10 12 14 16 18 -50 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID Fig. 6. Drain Current vs. Case Tem perature 3.0 50 2.8 VGS = 20V 45 2.6 40 TJ = 125ºC 2.4 35 I D - Amperes R D S (on) - Normalized 16V 80 35 I D - Amperes VGS = 20V 18V 90 2.2 2.0 1.8 1.6 30 25 20 15 1.4 10 1.2 TJ = 25ºC 1.0 5 0.8 0 0 20 40 60 80 I D - Amperes © 2007 IXYS CORPORATION, All rights reserved 100 120 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTK46N50L IXTX46N50L Fig. 8. Trans conductance Fig. 7. Input Adm ittance 20 70 18 60 16 14 g f s - Siemens I D - Amperes 50 40 30 TJ = 125ºC 25ºC -40ºC 20 10 TJ = -40ºC 25ºC 125ºC 12 10 8 6 4 2 0 0 5 6 7 8 9 10 11 12 13 14 15 0 10 20 30 V G S - Volts Fig. 9. Source Current vs . Source -To-Drain Voltage 16 60 14 VG S - Volts I S - Amperes 60 70 VDS = 250V I D = 23A I G = 10mA 12 50 40 TJ = 125ºC TJ = 25ºC 20 10 8 6 4 10 2 0 0 0.5 0.6 0.7 0.8 0.9 1 V S D - Volts 10000 C iss C oss 1000 C rss f = 1MHz 100 0 5 10 15 20 25 0 30 60 90 120 150 180 Q G - nanoCoulombs Fig. 11. Capacitance Capacitance - pF 50 Fig. 10. Gate Charge 70 30 40 I D - Amperes 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 210 240 270 IXTK46N50L IXTX46N50L Fig. 12. Forw ard-Bias Safe Fig. 13. Forw ard-Bias Safe Operating Area @ T C = 25ºC Operating Area @ T C = 90ºC 1000 1000 TJ = 150ºC TJ = 150ºC R DS(on) Limit R DS(on) Limit 100 25µs 100µs 10 1ms I D - Amperes I D - Amperes 100 25µs 100µs 10 1ms 10ms DC 1 10ms 1 DC 0.1 0.1 10 100 1000 10 100 1000 V D S - Volts V D S - Volts Fig. 14. Maxim um Transient Therm al Im pedance Z (th) J C - (ºC/W) 1.000 0.100 0.010 0.001 0.1 1 10 100 1000 Pulse Width - milliseconds © 2007 IXYS CORPORATION, All rights reserved IXYS REF: T_46N50L (8N) 4-05-07-A.xls