MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Small-Signal-Transistor,100V BSL296SN DataSheet Rev.2.0 Final Industrial&Multimarket BSL296SN OptiMOS™ Small-Signal-Transistor Product Summary Features 100 V VGS=10 V 460 mΩ VGS=4.5 V 560 VDS • N-channel RDS(on),max • Enhancement mode • Logic level (4.5V rated) 1.4 ID A • Avalanche rated • Qualified according to AEC Q101 PG-TSOP6 • RoHS compliant 6 • Halogen-free according to IEC61249-2-21 5 4 1 2 3 Type Package Tape and Reel Info Marking Halogen Free Packing BSL296SN TSOP6 H6327: 3000 pcs/ reel sLZ Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 1.4 T A=70 °C 1.1 Pulsed drain current I D,pulse T A=25 °C 5.6 Avalanche energy, single pulse E AS I D=1.4 A, R GS=25 Ω 15.0 Reverse diode dv /dt dv /dt I D=1.4 A, V DS=50 V, di /dt =200 A/µs, T j,max=150 °C 6 Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature A mJ kV/µs ±20 V 2.0 W -55 ... 150 °C 0 (<250V) 260 °C IEC climatic category; DIN IEC 68-1 Rev 2.0 Unit 55/150/56 page 1 2014-10-16 BSL296SN Parameter Values Symbol Conditions Unit min. typ. max. - - 50 minimal footprint - - 230 6 cm2 cooling area1) - - 62.5 100 - - 0.8 1.4 1.8 Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance R thJS R thJA junction - ambient K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Gate threshold voltage V GS(th) V DS=Vgs V, I D=100 µA Drain-source leakage current I DSS V DS=100 V, V GS=0 V, T j=25 °C - - 0.02 V DS=100 100 V, V GS=0 0 V, T j=150 °C - - 10 V μA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=1.4 A - 357 560 mΩ V GS=10 V, I D=1.26 A - 314 460 3.04 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=1.1 A S 1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70μm thick) copper area for drain connection. PCB is vertical in still air. (t < 5 sec.) Rev 2.0 page 2 2014-10-16 BSL296SN Parameter Values Symbol Conditions Unit min. typ. max. - 114.8 152.7 - 19.7 26.3 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 9.8 14.7 Turn-on delay time t d(on) - 3.5 5.6 Rise time tr - 3.0 4.5 Turn-off delay time t d(off) - 17.1 25.65 Fall time tf - 4.5 8.1 Gate to source charge Q gs - 0.27 0.4 Gate to drain charge Q gd - 1.47 2.2 Gate charge total Qg - 2.7 4.0 Gate p plateau voltage g V plateau - 2.5 - V - - 1.4 A - - 5.6 - 0.8 1.1 V - 20 30 ns - 37 55 nC V GS=0 V, V DS=25 V, f =1 MHz V DD=50 V, V GS=10 V, I D=1.4 A, R G,ext=6 Ω pF ns Gate Charge Characteristics2) V DD=50 V, I D=1.4 A, V GS=0 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr 2) T A=25 °C V GS=0 V, I F=1.4 A, T j=25 °C V R=50 V, I F=1.4 A, di F/dt =200 A/µs Defined by design. Not subjected to production test Rev 2.0 page 3 2014-10-16 BSL296SN 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 2.5 1.6 1.4 2 1.2 1 ID [A] Ptot [W] 1.5 1 0.8 0.6 0.4 0.5 0.2 0 0 0 40 80 120 160 0 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 10 102 1 µs 10 µs 0.5 100 µs 1 ms 1 0.2 ZthJA [K/W] 10 ms 0.1 ID [A] 5s 0.1 101 0.05 0.02 0.01 0.01 single pulse 100 0.001 1 Rev 2.0 10 VDS [V] 100 1000 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2014-10-16 BSL296SN 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 5.6 5.2 1000 3.5 V 10 V 3.3 V 2.8 V 4V 3V 4.8 4.4 750 4 RDS(on) [mW] 3V 3.6 ID [A] 3.2 2.8 2.8 V 2.4 3.3 V 500 3.5 V 4V 4.5 V 2 10 V 1.6 250 1.2 0.8 0.4 0 0 0 2 4 VDS [V] 6 0 8 0.8 1.6 2.4 3.2 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 5.6 7 4.8 6 4 5 4.8 5.6 4.0 4.8 5.6 150 °C 25 °C ID [A] gfs [S] 3.2 4 2.4 3 1.6 2 0.8 1 0 0 0 1 2 3 4 VGS [V] Rev 2.0 4 0.0 0.8 1.6 2.4 3.2 ID [A] page 5 2014-10-16 BSL296SN 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=1.4 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=100 µA parameter: I D 1200 2.4 1000 2 max 1.6 typ VGS(th) [V] RDS(on) [mW] 800 600 max 1.2 min 400 0.8 typ 200 0.4 0 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -10 40 Tj [°C] 90 140 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 103 101 25 °C 150 °C Ciss 100 IF [A] C [pF] 102 Coss 101 25 °C, 98% 10-1 Crss 150 °C, 98% 100 10-2 0 10 20 30 40 50 60 70 80 90 100 VDS [V] Rev 2.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD [V] page 6 2014-10-16 BSL296SN 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=1.4 A pulsed parameter: T j(start) parameter: V DD 50 V 10 101 20 V 9 80 V 8 7 100 VGS [V] IAV [A] 6 25 °C 100 °C 125 °C 5 4 3 2 1 10-1 0 0 100 101 tAV [µs] 102 1 15 Drain-source breakdown voltage 2 3 4 5 Qgate [nC] 103 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 120 V GS 116 Qg 112 108 VBR(DSS) [V] 104 100 V g s(th) 96 92 88 Q g (th) Q sw Q gate 84 Q gs Q gd 80 -60 -20 20 60 100 140 180 Tj [°C] Rev 2.0 page 7 2014-10-16 BSL296SN TSOP6 Package Outline: Note: For symmetric types there is no defined Pin 1 orientation in the reel. Rev 2.0 page 8 2014-10-16 BSL296SN RevisionHistory BSL296SN Revision:2014-10-22,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-10-22 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 9 Rev.2.0,2014-10-22