SemiHow HTP16A60H 3 quadrants standard triac Datasheet

HTP16A60H/HTP16A80H
3 Quadrants Standard TRIAC
Symbol
FEATURES
 Repetitive Peak Off-State Voltage : 600V/800V
 R.M.S On–State Current (IT(RMS) = 16A)
 Gate Trigger Current : 35mA
 High commutation capability.
TO-220
Applications
T1
T2
General purpose of AC switching, heating control, motor control, etc
G
General Description
Semihow’s standard TRIAC product is a glass passivated device,
has a high commutative performance, stable gate triggering level to
temperature and high off state voltage. It is generally suitable for
power and phase control in ac application
Absolute Maximum Ratings
Symbol
(TJ=25℃ unless otherwise specified )
Parameter
Ratings
Conditions
Unit
HTP16A60H HTP16A80H
VDRM
Repetitive Peak Off-State Voltage
VRRM
Repetitive Peak Reverse Voltage
IT(AV)
Average On-State Current
IT(RMS)
R.M.S. On-State Current
ITSM
Surge On-State Current
½ cycle, 50Hz/60Hz, Sine wave,
Non repetitive
Fusing Current
t = 10ms
Forward Peak Gate Power
Dissipation
Sine wave, 50/60Hz, Gate open
600
800
V
600
800
V
14.4
A
16
A
160/168
A
128
A2S
TJ = 125 °C
5
W
Forward Average Gate Power
Dissipation
TJ = 125 °C, over any 20ms
1
W
IFGM
Forward Peak Gate Current
TJ = 125 °C, pulse width ≤ 20us
2
A
VRGM
Reverse Peak Gate Voltage
TJ = 125 °C, pulse width ≤ 20us
10
V
Operating Junction Temperature
-40~+150
oC
Storage Temperature
-40~+150
oC
I2t
PGM
PG(AV)
TJ
TSTG
Full sine wave, TC = 81oC
◎ SEMIHOW REV.A1,March 2013
HTP16A60H_HTP16A80H
VDRM = 600V/800V
IT(RMS) = 16 A
ITSM = 168 A
IGT = 35mA
(TJ=25℃ unless otherwise specified )
Symbol
Parameter
IDRM
Repetitive Peak Off-State Current
IRRM
Repetitive Peak Reverse Current
IGT
Gate Trigger Current
VGT
Conditions
VD = VDRM
Min
Typ
Max
Unit
TJ=25oC
-
-
50
uA
TJ=125oC
-
-
5
mA
TJ=25oC
-
-
50
uA
TJ
=125oC
-
-
5
mA
VD = 12V, RL=330Ω
1+, 1-, 3-
-
-
35
mA
Gate Trigger Voltage
VD = 12V, RL=330Ω
1+, 1-, 3-
-
-
1.5
V
VGD
Non-Trigger Gate Voltage1
VD = 12V, RL=330Ω, TJ=125oC
0.2
-
-
V
VTM
Peak On-State Voltage
IT = 23A, IG = 50mA
-
1.1
1.4
V
dv/dt
Critical Rate of Rise of Off-State
Voltage
VD = 2/3 VDRM, TJ=125oC
200
-
-
V/us
Holding current
IT= 0.2A
-
50
-
mA
Min
Typ
Max
Unit
IH
VD = VDRM
Notes :
1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1%
Thermal Characteristics
Symbol
Parameter
Conditions
RθJC
Thermal Resistance
Junction to Case
2.1
oC/W
RθJA
Thermal Resistance
Junction to Ambient
58
oC/W
◎ SEMIHOW REV.A1,March 2013
HTP16A60H_HTP16A80H
Electrical Characteristics
HTP16A60H_HTP16A80H
Typical Characteristics
180o
20
150o
18
120o
16
Power dissipation, PD [W]
Maximum allowable case temperature, TC [oC]
22
14
12
90o
10
8
6
60o
4
2
30o
0
0
1
2
3
4
5
6
7
8
130
30o
120
60o
110
90o
100
120o
90
150o
80
180o
70
0
9 10 11 12 13 14 15 16 17 18
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18
R.M.S. on state current, IT(RMS) [A]
R.M.S. on state current, IT(RMS) [A]
Fig 1. R.M.S. current vs. Power dissipation
Fig 2. R.M.S. current vs. Case temperature
200
180
1
Surge on state current, ITSM [A]
10
Gate voltage, VG [V]
PGM(5W)
PG(AV)(1W)
100
o
25[ C]
I+GT1
I-GT1
I-GT3
101
102
140
120
60Hz
100
50Hz
80
60
40
20
VGD
10-1
100
160
103
0
100
104
101
Gate current, IG [mA]
Fig 4. Surge on state current rating
(Non-repetitive)
Fig 3. Gate power characteristics
2
IGT(toC)
X 100 (%)
IGT(25oC)
2
IGT(toC)
X 100 (%)
IGT(25oC)
102
Time [cycles]
I+GT1
I-GT1
I-GT3
1
0
-50
-25
0
25
50
75
100
125
150
o
Junction temperature, TJ [ C]
Fig 5. Gate trigger current vs.
junction temperature
V+GT1
V-GT1
V-GT3
1
0
-50
-25
0
25
50
75
100
125
150
Junction temperature, TJ [oC]
Fig 6. Gate trigger voltage vs.
junction temperature
◎ SEMIHOW REV.A1,March 2013
HTP16A60H_HTP16A80H
Typical Characteristics
101
Thermal impedance [oC/W]
1
IH(25oC)
IH(toC)
X 100(%)
2
0
-50
-25
0
25
50
75
100
125
150
100
10-1
10-2
10-1
o
100
101
Pulse Time [sec]
Junction Temperature, TJ [ C]
Fig 7. Holding current vs.
Junction temperature
Fig 8. Thermal Impedance vs. pulse time
Instantaneou on state current, IT [A]
103
102
101
150oC
25oC
0
10
10-1
RS=0.02Ω
VTO=1.15V
0
1
2
3
4
Instantaneou on state voltage, VT [V]
Fig 9. Instantaneous on state current vs.
Instantaneous on state voltage
Measurement of gate trigger current
RL
RL
RG
VG
(1) Quadrant I
VDD
RG
VG
(2) Quadrant II
RL
VDD
RG
VG
(3) Quadrant III
RL
VDD
VDD
RG
VG
(4) Quadrant IV
Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet.
◎ SEMIHOW REV.A1,March 2013
TO-220 (A)
9.90±0.20
0.
0±
.6
20
4.50±0.20
6.50±0.20
9.19±0.20
2.80±0.20
1.27±0.20
1.52±0.20
1.30±0.20
2.40±0.20
3.02±0.20
13.08±0.20
15.70±0.20
φ3
0.80±0.20
2.54typ
2.54typ
0.50±0.20
◎ SEMIHOW REV.A1,March 2013
HTP16A60H_HTP16A80H
Package Dimension
TO-220 (B)
±0.20
84
4.57±0.20
6.30±0.20
1.27±0.20
9.14±0.20
2.74±0.20
15.44±0.20
.
φ3
0
.2
±0
1.27±0.20
2.67±0.20
13.28±0.20
2.67±0.20
0.81±0.20
2.54typ
2.54typ
0.40±0.20
◎ SEMIHOW REV.A1,March 2013
HTP16A60H_HTP16A80H
Package Dimension
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