DGNJDZ NJ7N60 7.4a 600v n-channel power mosfet Datasheet

NJ7N60 POWER MOSFET
7.4A 600V N-CHANNEL POWER MOSFET
„
DESCRIPTION
The NJ7N60 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in switching power supplies and
adaptors.
FEATURES
„
* VDS = 600V ID = 7.4A
* RDS(ON) = 1.0 ohm@VGS = 10V (7N60)
* RDS(ON) = 1.2 ohm@VGS = 10V (7N60-F/7N60-A/7N60-D /7N60-L)
* Ultra Low Gate Charge (Typical 29 nC )
* Low Reverse Transfer Capacitance ( CRSS = typical 16pF )
* Fast switching capability
* Avalanche energy specified
*Improved dv/dt Capability, High Ruggedness
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Package
NJ7N60-LI
NJ7N60-BL
NJ7N60F-LI
Note:
Pin Assignment: G: Gate
TO-220
TO-220
TO-220F
D: Drain
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape Box
Bulk
Tube
NJ7N60 POWER MOSFET
„
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Avalanche Energy
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220
Power Dissipation
TO-220F
SYMBOL
VDSS
VGSS
IAR
ID
IDM
EAS
EAR
dv/dt
PD
RATINGS
600
±30
7.4
7.4
29.6
530
14.2
4.5
142
48
UNIT
V
V
A
A
A
mJ
mJ
V/ns
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 ȍ, Starting TJ = 25°C
4. ISD”7.4A, di/dt”200A/ȝs, VDD”BVDSS, Starting TJ = 25°C
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
șJA
TO-220
TO-220F
șJC
RATINGS
62.5
0.88
2.6
UNIT
°C/W
°C/W
NJ7N60 POWER MOSFET
„
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
VGS = 0V, ID = 250ȝA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
Forward
Gate- Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
Breakdown Voltage TemperatureʳCoefficient ƸBVDSSƸTJ ID=250ȝA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250ȝA
7N60
7N60-F
VGS = 10V,
Static Drain-Source On-State Resistance
RDS(ON)
7N60-M
ID = 3.7A
7N60-Q
7N60-R
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V,
Output Capacitance
COSS
f=1.0 MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD =300V, ID =7.4A,
RG =25ȍʳ(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=480V, ID=7.4A,
Gate-Source Charge
QGS
VGS=10Vʳ(Note 1, 2)
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 7.4 A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0V, IS = 7.4 A,
dIF / dt = 100A/ȝs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width”300ȝs, Duty cycle”2%
2. Essentially independent of operating temperature
„
BVDSS
IDSS
MIN TYP MAX UNIT
600
1
100
-100
V
ȝA
nA
nA
V/°C
0.83
0.93
0.93
0.93
0.93
4.0
1.0
1.2
1.2
1.2
1.2
V
ȍ
ȍ
ȍ
ȍ
ȍ
16
1400
180
21
pF
pF
pF
70
170
140
130
ns
ns
ns
ns
38
nC
nC
nC
1.4
V
7.4
A
29.6
A
0.67
2.0
29
7
14.5
320
2.4
ns
ȝC
CLASSIFICATION OF RDS(ON)
RANK
VALUE
1.0ȍ
F
1.2ȍ
A
1.2ȍ
D
1.2ȍ
L
1.2ȍ
NJ7N60 POWER MOSFET
„
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
Same Type
as D.U.T.
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
NJ7N60 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
„
RL
VDS
VGS
RG
VDD
D.U.T.
10V
Pulse Width” 1ȝs
Duty Factor”0.1%
Switching Test Circuit
12V
0.2μF
50kŸ
0.3μF
Switching Waveforms
Same
Type as
D.U.T.
VDS
VGS
DUT
3mA
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
NJ7N60 POWER MOSFET
„
TYPICAL CHARACTERISTICS
On-State Characteristics
Transfer Characteristics
10
VGS
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
Bottorm:5.5V
10
Top:
1
1
0.1
Notes:
1. 250μs Pulse Test
2. TC=25°C
0.1
1
Notes:
1. VDS=50V
2. 250μs Pulse Test
0.1
10
4
2
6
8
10
Drain-to-Source Voltage, VDS (V)
Gate-Source Voltage, VGS (V)
On-Resistance Variation vs.
Drain Current and Gate Voltage
On State Current vs.
Allowable Case Temperature
6
Reverse Drain Current, IDR (A)
Drain-Source On-Resistance,
RDS(ON) (ƻ)
10
5
VGS=20V
4
VGS=10V
3
2
1
Notes:
1. VGS=0V
2. 250μs Test
Note: TJ=25°C
0.1
0
0
2
4
6
8
Drain Current, ID (A)
1
10
12
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Source-Drain Voltage, VSD (V)
1.6
NJ7N60 POWER MOSFET
Drain-Source On-Resistance, RDS(ON)
(Normalized)
TYPICAL CHARACTERISTICS(Cont.)
Drain-Source Breakdown Voltage, BVDSS
(Normalized)
„
Maximum Drain Current vs. Case
Temperature
Transient Thermal Response Curve
7.5
1
6.25
D=0.5
5.0
0.2
0.1
0.1
3.75
0.05
0.02
2.5
0.01
Single Pulse
0.01
Notes:
1. LJJC (t) = 1.18°C/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×LJJC (t)
10-5
10-4 10-3
10-2
10-1
100
101
Square Wave Pulse Duration, t1 (sec)
ʳʳʳʳ
Safe Operating Area ̢ 600V
Operation in This Area is Limited by RDS(on)
101
100μs
1ms
10ms
100
DC
10-1
10-2
100
ʳʳʳʳ
Notes:
1. TJ=25°C
2. TJ=150°C
3. Single Pulse
101
102
Drain-Source Voltage, VDS (V)
600
103
1.25
0
25
50
75
100
125
Case Temperature, TC (°C)
150
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