IDT IDT7132LA100FI High-speed 2k x 8 dual-port static ram with interrupt Datasheet

HIGH SPEED
2K x 8 DUAL PORT
STATIC RAM
Features
◆
◆
◆
High-speed access
– Commercial: 20/25/35/55/100ns (max.)
– Industrial: 25ns (max.)
– Military: 25/35/55/100ns (max.)
Low-power operation
– IDT7132/42SA
Active: 325mW (typ.)
Standby: 5mW (typ.)
– IDT7132/42LA
Active: 325mW (typ.)
Standby: 1mW (typ.)
◆
◆
◆
◆
◆
◆
◆
IDT7132SA/LA
IDT7142SA/LA
MASTER IDT7132 easily expands data bus width to 16-or-more
bits using SLAVE IDT7142
On-chip port arbitration logic (IDT7132 only)
BUSY output flag on IDT7132; BUSY input on IDT7142
Battery backup operation —2V data retention (LA only)
TTL-compatible, single 5V ±10% power supply
Available in 48-pin DIP, LCC and Flatpack, and 52-pin PLCC
packages
Military product compliant to MIL-PRF-38535 QML
Industrial temperature range (–40°C to +85°C) is available for
selected speeds
Functional Block Diagram
OEL
OER
CEL
R/WL
CER
R/WR
I/OOL-I/O7L
I/O
Control
I/OOR-I/O7R
I/O
Control
m
BUSYL(1,2)
A10L
A0L
BUSYR(1,2)
Address
Decoder
MEMORY
ARRAY
11
CEL
OEL
R/WL
A10R
Address
Decoder
A0R
11
ARBITRATION
LOGIC
CER
OER
R/WR
2692 drw 01
NOTES:
1. IDT7132 (MASTER): BUSY is open drain output and requires pullup resistor of 270Ω.
IDT7142 (SLAVE): BUSY is input.
2. Open drain output: requires pullup resistor of 270Ω.
JUNE 2004
1
©2004 Integrated Device Technology, Inc.
DSC-2692/16
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Description
The IDT7132/IDT7142 are high-speed 2K x 8 Dual-Port Static RAMs.
The IDT7132 is designed to be used as a stand-alone 8-bit Dual-Port RAM
or as a “MASTER” Dual-Port RAM together with the IDT7142 “SLAVE”
Dual-Port in 16-bit-or-more word width systems. Using the IDT MASTER/
SLAVE Dual-Port RAM approach in 16-or-more-bit memory system
applications results in full-speed, error-free operation without the need for
additional discrete logic.
Both devices provide two independent ports with separate control,
address, and l/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power down
feature, controlled by CE permits the on-chip circuitry of each port to enter
a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 325mW of power. Low-power (LA)
versions offer battery backup data retention capability, with each DualPort typically consuming 200µW from a 2V battery.
The IDT7132/7142 devices are packaged in a 48-pin sidebraze or
plastic DIPs, 48-pin LCCs, 52-pin PLCCs, and 48-lead flatpacks.
Military grade product is manufactured in compliance with the latest
revision of MIL-PRF-38535 QML, making it ideally suited to military
temperature applications demanding the highest level of performance
and reliability.
6 5 4
7
8
9
10
11
12
13
14
15
16
17
18
19 20 21
A1L
A2L
A3L
A4L
A5L
A6L
A7L
A8L
A9L
I/O0L
I/O1L
I/O2L
3 2
OER
R/WR
BUSYR
A10R
INDEX
VCC
CER
VCC
CER
R/WR
BUSYR
A10R
OER
A0R
A1R
A2R
A3R
A4R
A5R
A6R
A7R
A8R
A9R
I/O7R
I/O6R
I/O5R
I/O4R
I/O3R
I/O2R
I/O1R
I/O0R
BUSYL
R/WL
CEL
1
48
2
47
3
46
4
45
5
44
6
43
7 IDT7132/ 42
8 7142 41
9 P or C 40
10
39
11 P48-1(4) 38
12
37
&
13 C48-2(4) 36
14
35
15 48-Pin 34
16 DIP 33
17 Top 32
18 View(5) 31
19
30
20
29
21
28
22
27
23
26
24
25
48 47 46 45 44 43
42
41
40
39
IDT7132/42L48 or F
L48-1(4)
38
&
37
(4)
F48-1
36
48-Pin LCC/ Flatpack
(5)
35
Top View
34
33
32
31
22 23 24 25 26 27 28 29 30
1
A0R
A1R
A2R
A3R
A4R
A5R
A6R
A7R
A8R
A9R
I/O7R
I/O6R
,
I/O3L
I/O4L
I/O5L
I/O6L
I/O7L
GND
I/O0R
I/O1R
I/O2R
I/O3R
I/O4R
I/O5R
CEL
R/WL
BUSYL
A10L
OEL
A0L
A1L
A2L
A3L
A4L
A5L
A6L
A7L
A8L
A9L
I/O0L
I/O1L
I/O2L
I/O3L
I/O4L
I/O5L
I/O6L
I/O7L
GND
A0L
OEL
A10L
Pin Configurations(1,2,3)
,
2692 drw 02
NOTES:
1. All VCC pins must be connected to the power supply.
2. All GND pins must be connected to the ground supply.
3. P48-1 package body is approximately .55 in x 2.43 in x .18 in.
C48-2 package body is approximately .62 in x 2.43 in x .15 in.
L48-1 package body is approximately .57 in x .57 in x .68 in.
F48-1 package body is approximately .75 in x .75 in x .11 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
Capacitance(1)
Symbol
2692 drw 03
(TA = +25°C,f = 1.0MHz)
Parameter
CIN
Input Capacitance
COUT
Output Capacitance
Conditions(2)
Max.
Unit
VIN = 3dV
11
pF
VOUT = 3dV
11
pF
2692 tbl 00
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV represents the interpolated capacitance when the input and output signals
switch from 3V to 0V.
2
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
7 6 5 4 3 2
8
9
10
11
12
13
14
15
16
17
18
19
20
52 51 50 49 48 47
1
46
45
44
43
42
41
40
39
38
37
36
35
34
IDT7132/42J
J52-1(4)
52-Pin PLCC
Top View(5)
OER
A0R
A1R
A2R
A3R
A4R
A5R
A6R
A7R
A8R
A9R
N/C
I/O7R
21 22 23 24 25 26 27 28 29 30 31 32 33
2692 drw 04
I/O4L
I/O5L
I/O6L
I/O7L
N/C
GND
I/O0R
I/O1R
I/O2R
I/O3R
I/O4R
I/O5R
I/O6R
A1L
A2L
A3L
A4L
A5L
A6L
A7L
A8L
A9L
I/O0L
I/O1L
I/O2L
I/O3L
R/WR
BUSYR
N/C
A10R
INDEX
R/WL
CEL
VCC
CER
A0L
OEL
A10L
N/C
BUSYL
Pin Configurations(1,2,3) (con't.)
NOTES:
1. All VCC pins must be connected to the power supply.
2. All GND pins must be connected to the ground supply.
3. Package body is approximately .75 in x .75 in x .17 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
Recommended Operating
Temperature and Supply Voltage(1,2)
Absolute Maximum Ratings(1)
Symbol
VTERM(2)
Rating
Terminal Voltage
with Respect
to GND
Commercial
& Industrial
-0.5 to +7.0
Military
-0.5 to +7.0
Grade
V
Military
Temperature
Under Bias
-55 to +125
TSTG
Storage
Temperature
-65 to +150
-65 to +150
IOUT
DC Output
Current
50
50
TBIAS
Unit
-65 to +135
o
C
Vcc
-55 C to+125 C
0V
5.0V + 10%
0 C to +70 C
0V
5.0V + 10%
-40 C to +85 C
0V
5.0V + 10%
O
Industrial
o
GND
O
Commercial
C
Ambient
Temperature
O
O
O
O
2692 tbl 02
NOTES:
1. This is the parameter TA. This is the "instant on" case temperature.
2. Industrial temperature: for specific speeds, packages and powers contact your
sales office.
mA
2692 tbl 01
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of the specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%.
Recommended DC Operating
Conditions
Symbol
Parameter
V CC
Supply Voltage
GND
Ground
Min.
Typ.
Max.
Unit
4.5
5.0
5.5
V
0
0
0
V
VIH
Input High Voltage
2.2
____
VIL
Input Low Voltage
-0.5(1)
____
NOTES:
1. VIL (min.) = -1.5V for pulse width less than 10ns.
2. VTERM must not exceed Vcc + 10%.
3
6.42
(2)
6.0
0.8
V
V
2692 tbl 03
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(1,5,8) (VCC = 5.0V ± 10%)
7132X20(2)
7142X20(2)
Com'l Only
Symbol
ICC
ISB1
ISB2
ISB3
ISB4
Parameter
Dynamic Operating Current
(Both Ports Active)
Standby Current
(Both Ports - TTL
Level Inputs)
Standby Current
(One Port - TTL
Level Inputs)
Full Standby Current (Both
Ports - All
CMOS Level Inputs)
Full Standby Current
(One Port - All
CMOS Level Inputs)
Test Condition
Version
CEL = CER = VIL,
Outputs Disabled
f = fMAX(3)
CEL = CER = VIH,
f = fMAX(3)
CE"A" = VIL and CE"B" = VIH(6)
Active Port Outputs Disabled
f=fMAX(3)
CEL and CER > VCC -0.2V
VIN > VCC -0.2V or VIN < 0.2V, f = 0(4)
CE"A" < 0.2V andCE"B" > VCC -0.2V(6)
VIN > VCC - 0.2V or VIN < 0.2V
Active Port Outputs Disabled
f = fMAX(3)
7132X25(7)
7142X25(7)
Com'l, Ind
& Military
7132X35
7142X35
Com'l &
Military
Typ.
Max.
Typ.
Max.
Typ.
Max.
Unit
mA
COM'L
SA
LA
110
110
250
200
110
110
220
170
80
80
165
120
MIL &
IND
SA
LA
____
____
____
____
110
110
280
220
80
80
230
170
COM'L
SA
LA
30
30
65
45
30
30
65
45
25
25
65
45
MIL &
IND
SA
LA
____
____
____
____
30
30
80
60
25
25
80
60
COM'L
SA
LA
65
65
165
125
65
65
150
115
50
50
125
90
MIL &
IND
SA
LA
____
____
____
____
65
65
160
125
50
50
150
115
COM'L
SA
LA
1.0
0.2
15
5
1.0
0.2
15
5
1.0
0.2
15
4
MIL &
IND
SA
LA
____
____
____
____
1.0
0.2
30
10
1.0
0.2
30
10
COM'L
SA
LA
60
60
155
115
60
60
145
105
45
45
110
85
MIL &
IND
SA
LA
____
____
____
____
60
60
155
115
45
45
145
105
mA
mA
mA
mA
2692 tbl 04a
7132X55
7142X55
Com'l &
Military
Symbol
ICC
ISB1
ISB2
ISB3
ISB4
Parameter
Test Condition
Version
7132X100
7142X100
Com'l &
Military
Typ.
Max.
Typ.
Max.
Unit
Dynamic Operating
Current
(Both Ports Active)
CEL = CER = VIL,
Outputs Disabled
f = fMAX(3)
COM'L
SA
LA
65
65
155
110
65
65
155
110
mA
MIL &
IND
SA
LA
65
65
190
140
65
65
190
140
Standby Current
(Both Ports - TTL
Level Inputs)
CEL = CER = VIH,
f = fMAX(3)
COM'L
SA
LA
20
20
65
35
20
20
55
35
MIL &
IND
SA
LA
20
20
65
45
20
20
65
45
Standby Current
(One Port - TTL
Level Inputs)
CE"A" = VIL and CE"B" = VIH(6)
Active Port Outputs Disabled
f=fMAX(3)
COM'L
SA
LA
40
40
110
75
40
40
110
75
MIL &
IND
SA
LA
40
40
125
90
40
40
125
90
Full Standby Current
(Both Ports - All
CMOS Level Inputs)
CEL and CER > VCC -0.2V
VIN > VCC -0.2V or VIN < 0.2V, f = 0(4)
COM'L
SA
LA
1.0
0.2
15
4
1.0
0.2
15
4
MIL &
IND
SA
LA
1.0
0.2
30
10
1.0
0.2
30
10
Full Standby Current
(One Port - All
CMOS Level Inputs)
CE"A" < 0.2V and CE"B" > VCC -0.2V(6)
VIN > VCC - 0.2V or VIN < 0.2V
Active Port Outputs Disabled
f = fMAX(3)
COM'L
SA
LA
40
40
100
70
40
40
95
70
MIL &
IND
SA
LA
40
40
110
85
40
40
110
80
mA
mA
mA
mA
2692 tbl 04b
NOTES:
1. 'X' in part numbers indicates power rating (SA or LA).
2. PLCC Package only
3. At f = fMax, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/t RC, and using “AC TEST CONDITIONS” of input levels
of GND to 3V.
4. f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby.
5. Vcc = 5V, TA=+25°C for Typ and is not production tested. Vcc DC = 100mA (Typ)
6. Port "A" may be either left or right port. Port "B" is opposite from port "A".
7. Not available in DIP packages.
8. Industrial temperature: for specific speeds, packages and powers contact your sales office.
4
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature Supply Voltage Range (VCC = 5.0V ± 10%)
7132SA
7142SA
Symbol
Parameter
Test Conditions
(1)
7132LA
7142LA
Min.
Max.
Min.
Max.
Unit
µA
|ILI|
Input Leakage Current
VCC = 5.5V,
VIN = 0V to VCC
___
10
___
5
|ILO|
Output Leakage Current
VCC = 5.5V,
CE = VIH, VOUT = 0V to VCC
___
10
___
5
VOL
Output Low Voltage
IOL = 4mA
___
0.4
___
0.4
VOL
Open Drain Output
Low Voltage (BUSY)
IOL = 16mA
___
0.5
___
0.5
VOH
Output High Voltage
IOH = -4mA
2.4
___
2.4
___
µA
V
V
V
2692 tbl 05
NOTE:
1. At Vcc < 2.0V leakages are undefined.
Data Retention Characteristics (LA Version Only)
Symbol
Parameter
Test Condition
Min.
Typ.(1)
Max.
Unit
2.0
___
___
V
VDR
VCC for Data Retention
VCC = 2.0V
ICCDR
Data Retention Current
CE > VCC -0.2V
Mil. & Ind.
___
100
4000
µA
VIN > VCC -0.2V or
Com'l.
___
100
1500
µA
0
___
___
ns
tRC(2)
___
___
ns
tCDR(3)
Chip Deselect to Data Retention Time
tR(3)
Operation Recovery Time
VIN < 0.2V
2692 tbl 06
NOTES:
1. VCC = 2V, TA = +25°C, and is not production tested.
2. tRC = Read Cycle Time
3. This parameter is guaranteed but not production tested.
Data Retention Waveform
DATA RETENTION MODE
VCC
4.5V
VDR ≥ 2.0V
tCDR
4.5V
tR
VDR
CE
VIH
VIH
,
2692 drw 05
5
6.42
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Test Conditions
Input Pulse Levels
GND to 3.0V
Input Rise/Fall Times
3ns Max.
Input Timing Reference Levels
1.5V
Output Reference Levels
1.5V
Output Load
Figures 1, 2, and 3
2692 tbl 07
5V
5V
1250Ω
1250Ω
DATAOUT
DATAOUT
775Ω
30pF*
775Ω
5pF*
*100pF for 55 and 100ns versions
Figure 1. AC Output Test Load
Figure 2. Output Test Load
(for t HZ, tLZ , tWZ, and tOW)
* Including scope and jig
5V
270Ω
BUSY
30pF*
*100pF for 55 and 100ns versions
2692 drw 06
Figure 3. BUSY AC Output Test Load
6
,
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(3,5)
7132X20(2)
7142X20(2)
Com'l Only
Symbol
Parameter
7132X25(2)
7142X25(2)
Com'l, Ind
& Military
7132X35
7142X35
Com'l &
Military
Min.
Max.
Min.
Max.
Min.
Max.
Unit
READ CYCLE
tRC
Read Cycle Time
20
____
25
____
35
____
ns
tAA
Address Access Time
____
20
____
25
____
35
ns
tACE
Chip Enable Access Time
____
20
____
25
____
35
ns
tAOE
Output Enable Access Time
____
11
____
12
____
20
ns
tOH
Output Hold from Address Change
3
____
3
____
3
____
ns
(1,4)
0
____
0
____
0
____
ns
(1,4)
____
10
____
10
____
15
ns
0
____
0
____
0
____
ns
____
20
____
25
____
35
ns
tLZ
tHZ
tPU
tPD
Output Low-Z Time
Output High-Z Time
Chip Enable to Power Up Time
(4)
Chip Disable to Power Down Time
(4)
2692 tbl 08a
7132X55
7142X55
Com'l &
Military
Symbol
Parameter
7132X100
7142X100
Com'l &
Military
Min.
Max.
Min.
Max.
Unit
READ CYCLE
tRC
Read Cycle Time
55
____
100
____
ns
tAA
Address Access Time
____
55
____
100
ns
tACE
Chip Enable Access Time
____
55
____
100
ns
tAOE
Output Enable Access Time
____
25
____
40
ns
tOH
Output Hold from Address Change
3
____
10
____
ns
tLZ
Output Low-Z Time (1,4)
5
____
5
____
ns
tHZ
(1,4)
____
25
____
40
ns
0
____
0
____
ns
____
50
____
50
ns
Output High-Z Time
(4)
tPU
Chip Enable to Power Up Time
tPD
Chip Disable to Power Down Time(4)
NOTES:
1. Transition is measured 0mV from Low or High-Impedance Voltage Output Test Load (Figure 2).
2. PLCC package only.
3. 'X' in part numbers indicates power rating (SA or LA).
4. This parameter is guaranteed by device characterization, but is not production tested.
5. Industrial temperature: for specific speeds, packages and powers contact your sales office.
7
6.42
2692 tbl 08b
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Read Cycle No. 1, Either Side(1)
tRC
ADDRESS
tAA
tOH
tOH
DATAOUT
PREVIOUS DATA VALID
DATA VALID
BUSYOUT
2692 drw 07
tBDDH(2,3)
Timing Waveform of Read Cycle No. 2, Either Side(1)
tACE
CE
tAOE(3)
tHZ(5)
OE
tHZ(5)
tLZ(4)
VALID DATA
DATAOUT
(4)
tLZ
ICC
CURRENT
ISS
tPD(3)
tPU
50%
50%
2692 drw 08
NOTES:
1. R/W = VIH, CE = VIL, and is OE = VIL. Address is valid prior to the coincidental with CE transition LOW.
2. tBDD delay is required only in the case where the opposite port is completing a write operation to the same address location. For simultaneous read operations, BUSY has
no relationship to valid output data.
3. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD .
4. Timing depends on which signal is asserted last, OE or CE.
5. Timing depends on which signal is de-asserted first, OE or CE.
8
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature Supply Voltage Range(5,6)
7132X20(2)
7142X20(2)
Com'l Only
Symbol
Parameter
7132X25(2)
7142X25(2)
Com'l, Ind
& Military
7132X35
7142X35
Com'l &
Military
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
tWC
Write Cycle Time (3)
20
____
25
____
35
____
ns
tEW
Chip Enable to End-of-Write
15
____
20
____
30
____
ns
tAW
Address Valid to End-of-Write
15
____
20
____
30
____
ns
tAS
Address Set-up Time
0
____
0
____
0
____
ns
tWP
Write Pulse Width(4)
15
____
15
____
25
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tDW
Data Valid to End-of-Write
10
____
12
____
15
____
ns
____
10
____
10
____
15
ns
0
____
0
____
0
____
ns
____
10
____
10
____
15
ns
0
____
0
____
0
____
ns
tHZ
Output High-Z Time
tDH
Data Hold Time
tWZ
tOW
(1)
(1)
Write Enable to Output in High-Z
Output Active from End-of-Write
(1)
2692 tbl 09
7132X55
7142X55
Com'l &
Military
Symbol
Parameter
7132X100
7142X100
Com'l &
Military
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
tWC
Write Cycle Time (3)
55
____
100
____
ns
tEW
Chip Enable to End-of-Write
40
____
90
____
ns
tAW
Address Valid to End-of-Write
40
____
90
____
ns
tAS
Address Set-up Time
0
____
0
____
ns
ns
(4)
tWP
Write Pulse Width
30
____
55
____
tWR
Write Recovery Time
0
____
0
____
ns
tDW
Data Valid to End-of-Write
20
____
40
____
ns
tHZ
Output High-Z Time (1)
____
25
____
40
ns
tDH
Data Hold Time
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z(1)
____
30
____
40
ns
0
____
0
____
tOW
Output Active from End-of-Write
(1)
ns
2692 tbl 10
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2). This parameter is guaranteed by device characterization
but is not production tested.
2. PLCC package only.
3. For Master/Slave combination, tWC = tBAA + tWP , since R/W = VIL must occur after tBAA .
4. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW ) to allow the I/O drivers to turn off data to be placed on the
bus for the required tDW. If OE is High during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP .
5. 'X' in part numbers indicates power rating (SA or LA).
6. Industrial temperature: for specific speeds, packages and powers contact your sales office.
9
6.42
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Write Cycle No. 1, (R/W Controlled Timing)(1,5,8)
tWC
ADDRESS
tHZ(7)
OE
tAW
CE
tAS(6)
tWR(3)
tWP(2)
tHZ(7)
R/W
tWZ(7)
tOW
(4)
DATA OUT
(4)
tDW
tDH
DATA IN
2692 drw 09
Timing Waveform of Write Cycle No. 2, (CE Controlled Timing)(1,5)
tWC
ADDRESS
tAW
CE
tAS(6)
tEW(2)
tWR(3)
R/W
tDW
tDH
DATA IN
2692 drw 10
NOTES:
1. R/W or CE must be HIGH during all address transitions.
2. A write occurs during the overlap (tEW or t WP) of CE = VIL and R/W = VIL.
3. tWR is measured from the earlier of CE or R/W going HIGH to the end of the write cycle.
4. During this period, the l/O pins are in the output state and input signals must not be applied.
5. If the CE LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal (CE or R/W) is asserted last.
7. This parameter is determined be device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load
(Figure 2).
8. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off data to be placed on the
bus for the required tDW . If OE is HIGH during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP.
10
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(7,8)
7132X20(1)
7142X20(1)
Com'l Only
Symbol
Parameter
7132X25(2)
7142X25(2)
Com'l, Ind
& Military
7132X35
7142X35
Com'l &
Military
Min.
Max.
Min.
Max.
Min.
Max.
Unit
BUSY Timing (For Master IDT7132 Only)
tBAA
BUSY Access Time from Address
____
20
____
20
____
20
ns
tBDA
BUSY Disable Time from Address
____
20
____
20
____
20
ns
BUSY Access Time from Chip Enable
____
20
____
20
____
20
ns
tBDC
BUSY Disable Time from Chip Enable
____
20
____
20
____
20
ns
tWDD
Write Pulse to Data Delay (2)
____
50
____
50
____
60
ns
12
____
15
____
20
____
ns
____
35
____
35
____
35
ns
5
____
5
____
5
____
ns
____
25
____
35
____
35
ns
0
____
0
____
0
____
ns
ns
ns
tBAC
tWH
Write Hold After BUSY
(6)
tDDD
Write Data Valid to Read Data Delay
tAPS
Arbitration Priority Set-up Time (3)
tBDD
BUSY Disable to Valid Data
(2)
(4)
BUSY Timing (For Slave IDT7142 Only)
Write to BUSY Input(5)
tWB
(6)
tWH
Write Hold After BUSY
12
____
15
____
20
____
tWDD
Write Pulse to Data Delay (2)
____
40
____
50
____
60
tDDD
Write Data Valid to Read Data Delay (2)
____
30
____
35
____
35
ns
2692 tbl 11a
7132X55
7142X55
Com'l &
Military
Symbol
Parameter
7132X100
7142X100
Com'l &
Military
Min.
Max.
Min.
Max.
Unit
BUSY Access Time from Address
____
30
____
50
ns
BUSY Disable Time from Address
____
30
____
50
ns
BUSY Access Time from Chip Enable
____
30
____
50
ns
BUSY Disable Time from Chip Enable
____
30
____
50
ns
____
80
____
120
ns
ns
BUSY Timing (For Master IDT7132 Only)
tBAA
tBDA
tBAC
tBDC
tWDD
Write Pulse to Data Delay
(2)
(6)
tWH
Write Hold After BUSY
20
____
20
____
tDDD
Write Data Valid to Read Data Delay (2)
____
55
____
100
ns
tAPS
Arbitration Priority Set-up Time (3)
5
____
5
____
ns
____
50
____
65
ns
tBDD
BUSY Disable to Valid Data
(4)
BUSY Timing (For Slave IDT7142 Only)
tWB
Write to BUSY Input(5)
0
____
0
____
ns
tWH
Write Hold After BUSY(6)
20
____
20
____
ns
____
80
____
120
ns
____
55
____
100
tWDD
tDDD
Write Pulse to Data Delay
(2)
Write Data Valid to Read Data Delay
(2)
NOTES:
1. PLCC package only.
2. Port-to-port delay through RAM cells from the writing port to the reading port, refer to “Timing Waveform of Write with Port -to-Port Read and BUSY.”
3. To ensure that the earlier of the two ports wins.
4. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual) or tDDD – t DW (actual).
5. To ensure that a write cycle is inhibited on port "B" during contention on port "A".
6. To ensure that a write cycle is completed on port "B" after contention on port "A".
7. 'X' in part numbers indicates power rating (SA or LA).
8. Industrial temperature: for specific speeds, packages and powers contact your sales office.
11
6.42
ns
2692 tbl 11b
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Port-to-Port Read and BUSY(2,3,4)
tWC
ADDR"A"
MATCH
tWP
R/W"A"
tDW
DATAIN"A"
tDH
VALID
(1)
tAPS
MATCH
ADDR"B"
tBDD
t BDA
tBAA
BUSY"B"
tWDD
DATAOUT"B"
VALID
tDDD
2692 drw 11
NOTES:
1. To ensure that the earlier of the two ports wins. tAPS is ignored for Slave (IDT7142).
2. CEL = CER = VIL
3. OE = VIL for the reading port.
4. All timing is the same for the left and right ports. Port "A" may be either the left or right port. Port "B" is opposite from port "A".
Timing Waveform of Write with BUSY(4)
tWP
R/W"A"
tWB(3)
BUSY"B"
tWH(1)
R/W"B"
(2)
2692 drw 12
NOTES:
1. tWH must be met for both BUSY Input (IDT7142, slave) or Output (IDT7132, master).
2. BUSY is asserted on port "B" blocking R/W"B", until BUSY"B" goes HIGH.
3. tWB applies only to the slave version (IDT7142).
4. All timing is the same for the left and right ports. Port 'A' may be either the left or right port. Port "B" is opposite from port "A".
12
,
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of BUSY Arbitration Controlled by CE Timing(1)
ADDR
"A"
ADDRESSES MATCH
and "B"
CE"B"
tAPS(2)
CE"A"
tBAC
tBDC
BUSY"A"
2692 drw 13
Timing Waveform of BUSY Arbitration Controlled
by Address Match Timing(1)
tRC or tWC
ADDR"A"
ADDRESSES MATCH
ADDRESSES DO NOT MATCH
(2)
tAPS
ADDR"B"
tBAA
tBDA
BUSY"B"
2692 drw 14
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”.
2. If tAPS is not satisified, the BUSY will be asserted on one side or the other, but there is no guarantee on which side BUSY will be asserted (7132 only).
Truth Tables
Table I. Non-Contention Read/Write Control(4)
Left or Right Port(1)
R/W
CE
OE
D0-7
Function
X
H
X
Z
Port Disabled and in Power-Down Mode, ISB2 or ISB4
X
H
X
Z
CER = CEL = VIH, Power-Down Mode, ISB1 or ISB3
L
L
X
DATAIN
H
L
L
DATAOUT
X
L
H
Z
Data on Port Written into Memory (2)
Data in Memory Output on Port(3)
High Impedance Outputs
2692 tbl 12
NOTES:
1. A0L - A10L ≠ A 0R - A10R
2. If BUSY = L, data is not written.
3. If BUSY = L, data may not be valid, see tWDD and tDDD timing.
4. 'H' = VIH, 'L' = VIL, 'X' = DON’T CARE, 'Z' = HIGH IMPEDANCE
13
6.42
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Table II — Address BUSY
Arbitration
Outputs
CEL
CER
AOL-A10L
AOR-A10R
BUSYL(1)
BUSYR(1)
X
X
NO MATCH
H
H
Normal
H
X
MATCH
H
H
Normal
X
H
MATCH
H
H
Normal
L
L
MATCH
(2)
(2)
Write Inhibit(3)
Function
2692 tbl 13
NOTES:
1. Pins BUSYL and BUSYR are both outputs for IDT7132 (master). Both are inputs for
IDT7142 (slave). BUSYX outputs on the IDT7132 are open drain, not push-pull
outputs. On slaves the BUSYX input internally inhibits writes.
2. 'L' if the inputs to the opposite port were stable prior to the address and enable inputs
of this port. 'H' if the inputs to the opposite port became stable after the address and
enable inputs of this port. If tAPS is not met, either BUSYL or BUSYR = LOW will
result. BUSYL and BUSYR outputs can not be LOW simultaneously.
3. Writes to the left port are internally ignored when BUSYL outputs are driving LOW
regardless of actual logic level on the pin. Writes to the right port are internally
ignored when BUSYR outputs are driving LOW regardless of actual logic level on
the pin.
Width Expansion with Busy Logic
Master/Slave Arrays
When expanding an SRAM array in width while using BUSY logic,
one master part is used to decide which side of the SRAM array will
receive a BUSY indication, and to output that indication. Any number
of slaves to be addressed in the same address range as the master,
use the BUSY signal as a write inhibit signal. Thus on the IDT7132/
IDT7142 SRAMs the BUSY pin is an output if the part is Master (IDT7132),
and the BUSY pin is an input if the part is a Slave (IDT7142) as shown
in Figure 3.
5V
270Ω
MASTER
Dual Port
SRAM
BUSYL
Functional Description
The IDT7132/IDT7142 provides two ports with separate control,
address and I/O pins that permit independent access for reads or
writes to any location in memory. The IDT7132/IDT7142 has an
automatic power down feature controlled by CE. The CE controls onchip power down circuitry that permits the respective port to go into a
standby mode when not selected (CE = VIH). When a port is enabled,
access to the entire memory array is permitted.
Busy Logic
Busy Logic provides a hardware indication that both ports of the
RAM have accessed the same location at the same time. It also allows
one of the two accesses to proceed and signals the other side that the
RAM is “Busy”. The BUSY pin can then be used to stall the access until
the operation on the other side is completed. If a write operation has
been attempted from the side that receives a busy indication, the write
signal is gated internally to prevent the write from proceeding.
The use of BUSY Logic is not required or desirable for all applications. In some cases it may be useful to logically OR the BUSY outputs
together and use any BUSY indication as an interrupt source to flag the
event of an illegal or illogical operation.
MASTER
Dual Port
SRAM
BUSYL
BUSYL
CE
BUSYR
CE
BUSYR
SLAVE
Dual Port
SRAM
BUSYL
SLAVE
Dual Port
SRAM
BUSYL
CE
BUSYR
DECODER
Inputs
The BUSY outputs on the IDT7132 RAM master are totem-pole type
outputs and do not require pull-up resistors to operate. If these RAMs are
being expanded in depth, then the BUSY indication for the resulting array
does not require the use of an external AND gate.
5V
270Ω
CE
BUSYR
BUSYR
2692 drw 15
Figure 4. Busy and chip enable routing for both width and depth
expansion with IDT7132 (Master) and (Slave) IDT7142 SRAMs.
If two or more master parts were used when expanding in width, a
split decision could result with one master indicating BUSY on one side
of the array and another master indicating BUSY on one other side of
the array. This would inhibit the write operations from one port for part
of a word and inhibit the write operations from the other port for the
other part of the word.
The BUSY arbitration, on a Master, is based on the chip enable and
address signals only. It ignores whether an access is a read or write.
In a master/slave array, both address and chip enable must be valid
long enough for a BUSY flag to be output from the master before the
actual write pulse can be initiated with either the R/W signal or the byte
enables. Failure to observe this timing can result in a glitched internal
write inhibit signal and corrupted data in the slave.
14
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Ordering Information
IDT
A
XXXX
999
A
Device Type Power Speed Package
A
Process/
Temperature
Range
BLANK Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
I(1)
Military (-55°C to +125°C)
B
Compliant to MIL-PRF-38535 QML
P
C
J
L48
F
48-pin Plastic DIP (P48-1)
48-pin Sidebraze DIP (C48-2)
52-pin PLCC (J52-1)
48-pin LCC (L48-1)
48-pin Ceramic Flatpack (F48-1)
20
25
35
55
100
Commercial PLCC Only
Commercial, Industrial & Military
Commercial & Military
Commercial & Military
Commercial & Military
LA
SA
Low Power
Standard Power
7132
7142
16K (2K x 8-Bit) MASTER Dual-Port RAM
16K (2K x 8-Bit) SLAVE Dual-Port RAM

 Speed in nanoseconds

NOTE:
1. Industrial temperature range is available.
For specific speeds, packages and powers contact your sales office.
2692 drw 16
Datasheet Document History
03/24/99:
06/08/99:
08/26/99:
11/10/99:
01/12/00:
,
Initiated datasheet document history
Converted to new format
Cosmetic and typographical corrections
Pages 2 and 3 Added additional notes to pin configurations
Changed drawing format
Page 14 Changed Busy Logic and Width Expansion copy
Replaced IDT logo
Pages 1 and 2 Moved full "Description" to page 2 and adjusted page layouts
Page 1 Added "(LAonly)" to paragraph
Page 2 Fixed P48-1 body package description
Page 3 Increased storage temperature parameters
Clarified TA parameter
Page 4 DC Electrical parameters–changed wording from "open" to "disabled"
Page 6 Added asteriks to Figures 1 and 3 in drw 06
Page 14 Corrected part numbers
Changed ±500mV to 0mV in notes
Datasheet Document History continued on page 16
15
6.42
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Datasheet Document History (cont'd)
06/11/04: Page 6
Corrected errors in Figure 3 by changing 1250Ω to 270Ω and removing "or Int" and Int
Page 4, 7, 9, 11 & 15 Clarified Industrial temp offering for 25ns
Page 5 Removed INT from VOL parameter in DC Electrical Characteristics table
Page 6 Updated AC Test Conditions Input Rise/Fall Times from 5ns to 3ns
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16
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