VCE = 650 V, IC = 40 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A4H, MGF65A4H, FGF65A4H Description KGF65A4H, MGF65A4H, and FGF65A4H are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction. Thus, Field Stop IGBTs can improve the efficiency of your circuit. Data Sheet Package TO247-3L TO3P-3L (4) (4) Features ● ● ● ● Low Saturation Voltage High Speed Switching With Integrated Fast Recovery Diode RoHS Compliant ● ● ● ● ● ● VCE ------------------------------------------------------ 650 V IC (TC = 100 °C) ----------------------------------------- 40 A Short Circuit Withstand Time ----------------------- 10 μs VCE(sat) ----------------------------------------------- 1.9 V typ. tf (TJ = 175 °C) ------------------------------------ 60 ns typ. VF ---------------------------------------------------- 1.8 V typ. Applications (1) (2) (3) (1) (2) (3) TO3PF-3L (1) (2) (3) ● Welding Converters ● PFC Circuit (2)(4) (1) Gate (2) Collector (3) Emitter (4) Collector (1) (3) Not to scale Selection Guide Part Number Package KGF65A4H TO247-3L MGF65A4H TO3P-3L FGF65A4H TO3PF-3L xGF65A4H-DSE Rev.1.4 SANKEN ELCTRIC CO., LTD. Oct. 12, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 1 KGF65A4H, MGF65A4H, FGF65A4H Absolute Maximum Ratings Unless otherwise specified, TA = 25 °C Parameter Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current (1) Symbol VCE VGE IC Pulsed Collector Current IC(PULSE) Diode Continuous Forward Current (1) IF Diode Pulsed Forward Current IF(PULSE) Short Circuit Withstand Time tSC Conditions TC = 25 °C TC = 100 °C PW ≤ 1 ms, duty cycle ≤ 1% TC = 25 °C TC = 100 °C PW ≤ 1 ms, duty cycle ≤ 1% VGE = 15 V, VCE = 400 V, TJ = 175 °C Rating 650 ±30 65 40 Unit V V A A 120 A (2) 40 30 A A 100 A 10 μs 288 Power Dissipation PD TC = 25 °C W 72 Operating Junction Temperature Storage Temperature Range TJ TSTG Remarks MGF65A4H KGF65A4H FGF65A4H 175 −55 to 150 °C °C Thermal Characteristics Unless otherwise specified, TA = 25 °C Parameter Symbol Thermal Resistance of IGBT (Junction to Case) RθJC (IGBT) Thermal Resistance of Diode (Junction to Case) RθJC (Di) (1) (2) Conditions Min. Typ. Max. — — 0.52 — — 2.08 — — 1.15 — — 2.28 Unit °C/W °C/W Remarks MGF65A4H KGF65A4H FGF65A4H MGF65A4H KGF65A4H FGF65A4H IC and IF are determined by the maximum junction temperature for TO3P-3L package. Determined by bonding wires capability. xGF65A4H-DSE Rev.1.4 SANKEN ELCTRIC CO., LTD. Oct. 12, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 2 KGF65A4H, MGF65A4H, FGF65A4H Electrical Characteristics Unless otherwise specified, TA = 25 °C Parameter Symbol Collector to Emitter Breakdown V(BR)CES Voltage Collector to Emitter Leakage Current ICES Min. Typ. Max. Unit IC = 100 μA, VGE = 0 V 650 — — V VCE = 650 V, VGE = 0 V — — 100 µA VGE = ±30 V — — ±500 nA VGE(TH) VCE = 10 V, IC = 1 mA 4.0 5.5 7.0 V VCE(sat) VGE = 15 V, IC = 40 A — 1.9 2.37 V — 2300 — — 250 — — 110 — — 75 — td(on) — 40 — tr — 40 — — 100 — — 40 — Eon — 0.7 — Turn-off Energy Eoff — 0.6 — Turn-on Delay Time td(on) — 40 — tr — 40 — — 130 — — 60 — Gate to Emitter Leakage Current Gate Threshold Voltage Collector to Emitter Saturation Voltage Input Capacitance IGES Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge Qg Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Energy td(off) tf (3) Rise Time Turn-off Delay Time Fall Time td(off) tf Conditions VCE = 20 V, VGE = 0 V, f = 1.0 MHz VCE = 520 V, IC = 40 A, VGE = 15 V TJ = 25 °C, see Figure 1. TJ = 175 °C, see Figure 1. Turn-on Energy (3) Eon — 1.3 — Turn-off Energy Emitter to Collector Diode Forward Voltage Emitter to Collector Diode Reverse Recovery Time Eoff — 0.9 — (3) pF nC ns mJ ns mJ VF IF = 30 A — 1.8 — V trr IF = 30 A, di/dt = 700 A/μs — 50 — ns Energy losses include the reverse recovery of diode. xGF65A4H-DSE Rev.1.4 SANKEN ELCTRIC CO., LTD. Oct. 12, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 3 KGF65A4H, MGF65A4H, FGF65A4H Test Circuits and Waveforms Conditions VCE = 400 V IC = 40 A VGE = 15 V RG = 10 Ω L= 100 μH DUT (Diode) L VCE RG IC 15V VGE DUT (IGBT) (a) Test Circuit VGE 90% 10% t VCE dv/dt t IC 90% 90% 10% 10% td(on) tr td(off) t tf (b) Waveform Figure 1. Test Circuits and Waveforms of dv/dt and Switching Time xGF65A4H-DSE Rev.1.4 SANKEN ELCTRIC CO., LTD. Oct. 12, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 4 KGF65A4H, MGF65A4H, FGF65A4H 1000 1000 100 100 Collector Current, IC (A) Collector Current, IC (A) Rating and Characteristic Curves 10 1 IGBT, Single pulse, TJ = 175 °C 0.1 1 10 100 10 μs 100 μs 10 1 IGBT, Single pulse, TJ = 25 °C 0.1 1000 1 Collector-Emitter Voltage, VCE (V) Figure 2. 100 1000 Collector-Emitter Voltage, VCE (V) IGBT Reverse Bias Safe Operating Area Figure 3. 300 IGBT Safe Operating Area 100 Collector Current, IC (A) 250 Power Dissipation, PD (W) 10 200 150 100 TO3P-3L, TO247-3L, TJ < 175 °C 50 50 60 40 TO3P-3L, TO247-3L, TJ < 175 °C 20 0 25 80 75 100 125 150 175 0 25 Case Temperature, TC (°C) Figure 4. Power Dissipation vs. TO3P-3L and TO247-3L Case Temperature 50 75 100 125 150 175 Case Temperature, TC (°C) Figure 5. Collector Current vs. TO3P-3L and TO247-3L Case Temperature xGF65A4H-DSE Rev.1.4 SANKEN ELCTRIC CO., LTD. Oct. 12, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 5 KGF65A4H, MGF65A4H, FGF65A4H 40 80 Collector Current, IC (A) Power Dissipation, PD (W) 100 60 40 TO3PF-3L, TJ < 175 °C 0 25 50 20 10 TO3PF-3L, TJ < 175 °C 20 30 75 100 125 150 0 175 25 Case Temperature, TC (°C) Figure 6. 50 75 100 125 150 175 Case Temperature, TC (°C) Power Dissipation vs. TO3PF-3L Case Temperature Figure 7. 100 Collector Current vs. TO3PF-3L Case Temperature 100 TJ = 25 °C TJ = 175 °C VGE = 15 V VGE = 15 V Collector Current, IC (A) 80 Collector Current, IC (A) VGE = 12 V VGE = 20 V 60 VGE = 10 V 40 VGE = 8 V 20 80 VGE = 12 V VGE = 20 V 60 VGE = 10 V 40 20 VGE = 8 V 0 0 0 1 2 3 4 Collector-Emitter Voltage, VCE (V) Figure 8. Output Characteristics (TJ = 25 °C) 5 0 1 2 3 4 5 Collector-Emitter Voltage, VCE (V) Figure 9. xGF65A4H-DSE Rev.1.4 SANKEN ELCTRIC CO., LTD. Oct. 12, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 Output Characteristics (TJ = 175 °C) 6 KGF65A4H, MGF65A4H, FGF65A4H 3.0 Collector-Emitter Saturation, VCE (sat) (V) 100 VCE = 5 V Collector Current. IC (A) 80 60 40 TJ = 25 °C TJ = 175 °C 20 VGE = 15 V 2.5 IC = 40 A 2.0 1.5 IC = 20 A 1.0 0 0 5 10 -50 -25 15 Gate-Emitter Voltage, VGE (V) Figure 10. 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) Transfer Characteristics Figure 11. Saturation Voltage vs. Junction Temperature 7 3.0 VGE = 15 V TJ = 175 °C 2.5 6 Gate Threshold Voltage (V) at VCE = 10 V, IC = 1mA Collector-Emitter Saturation, VCE (sat) (V) IC = 80 A TJ = 25 °C 2.0 TJ = −55 °C 1.5 5 4 3 1.0 2 0.5 0 20 40 60 80 -50 -25 Collector Current, IC (A) Figure 12. Saturation Voltage vs. Collector Current 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) Figure 13. xGF65A4H-DSE Rev.1.4 SANKEN ELCTRIC CO., LTD. Oct. 12, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 Gate Threshold Voltage vs. Junction Temperature 7 KGF65A4H, MGF65A4H, FGF65A4H 10000 Cies 1000 Capacitance (pF) Gate -Emitter Voltage, VGE (V) 20 Coes 100 IC = 40 A VCE ≈ 130 V 10 VCE ≈ 520 V Cres f = 1 MHz, VGE = 0 V 10 0 0 10 20 30 40 50 0 20 Capacitance Characteristics Figure 15. 80 Typical Gate Charge 1000 1000 Inductive load, IC = 40 A, VCE = 400 V, VGE = 15 V, RG = 10 Ω td(off) Switching Time (ns) Switching Time (ns) 60 Gate Charge, Qg (nC) Collector-Emitter Voltage, VCE (V) Figure 14. 40 td(off) 100 tr tf tf td(on) 10 tr td(on) Inductive load, VCE = 400 V, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 10 25 100 50 75 100 125 150 175 1 1 Junction Temperature, TJ (°C) Figure 16. Switching Time vs. Junction Temperature 10 100 Collector Current, IC (A) Figure 17. xGF65A4H-DSE Rev.1.4 SANKEN ELCTRIC CO., LTD. Oct. 12, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 Switching Time vs. Collector Current 8 KGF65A4H, MGF65A4H, FGF65A4H 1000 4 Inductive load, IC = 40 A, VCE = 400 V, VGE = 15 V, TJ = 175 °C Inductive load, IC = 40 A, VCE = 400 V, VGE = 15 V, RG = 10 Ω td(off) Switching Loss (mJ) Switching Time (ns) 3 tr 100 tf Eon + Eoff 2 Eon 1 td(on) Eoff 0 10 10 25 100 50 Switching Time vs. Gate Resistor Figure 19. 12 125 150 175 Switching Loss vs. Junction Temperature 10 Inductive load, IC = 40 A, VCE = 400 V, VGE = 15 V, TJ = 175 °C Eon + Eoff 8 Switching Loss (mJ) Inductive load, VCE = 400 V, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 10 Switching Loss (mJ) 100 Junction Temperature, TJ (°C) Gate Resistor, RG (Ω) Figure 18. 75 8 6 Eon 4 4 Eon 2 Eoff 2 Eon + Eoff 6 Eoff 0 0 0 20 40 60 80 100 120 10 20 Collector Current, IC (A) Figure 20. Switching Loss vs. Collector Current 30 40 50 60 70 80 90 100 Gate Resistor, RG (Ω) Figure 21. xGF65A4H-DSE Rev.1.4 SANKEN ELCTRIC CO., LTD. Oct. 12, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 Switching Loss vs. Gate Resistor 9 KGF65A4H, MGF65A4H, FGF65A4H 100 4 Eon + Eoff 80 3 Forward Current, IF (A) Switching Loss (mJ) Inductive load, IC = 40 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C Eon 2 1 Eoff 60 TJ = 175 °C 40 TJ = −55 °C 20 TJ = 25 °C 0 200 250 300 350 400 450 0 500 0.0 0.5 Switching Loss vs. Collector-Emitter Voltage Figure 23. 3 2.0 2.5 3.0 Diode Forward Characteristics 160 IF = 60 A 2 IF = 30 A 1 IF = 10 A Reverse Recovery Time, trr (ns) Forward Voltage, VF (V) 1.5 Forward Voltage, VF (V) Collector-Emitter Voltage, VCE (V) Figure 22. 1.0 Inductive load, VR = 400 V, IF = 30 A TJ = 175 °C 140 120 100 80 TJ = 25 °C 60 0 -50 -25 0 25 50 75 100 125 150 175 40 300 500 600 700 800 900 1000 di/dt (A/μs) Junction Temperature, TJ (°C) Figure 24. Diode Forward Voltage vs. Junction Temperature 400 Figure 25. xGF65A4H-DSE Rev.1.4 SANKEN ELCTRIC CO., LTD. Oct. 12, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 Diode Reverse Recovery Time vs. di/dt 10 KGF65A4H, MGF65A4H, FGF65A4H 30 Inductive load, VR = 400 V, IF = 30 A 2.5 Reverse Recovery Current, Irr (A) Reverse Recovery Charge, Qrr (μC) 3.0 TJ = 175 °C 2.0 1.5 1.0 TJ = 25 °C 0.5 TJ = 175 °C 25 20 TJ = 25 °C 15 10 Inductive load, VR = 400 V, IF = 30 A 5 0 0.0 300 400 500 600 700 800 300 900 1000 400 di/dt (A/μs) Figure 26. 500 600 700 800 900 1000 di/dt (A/µs) Diode Reverse Recovery Charge vs. di/dt Figure 27. Diode Reverse Recovery Current vs. di/dt Thermal Resistance (°C/W) 10 Diode 1 IGBT 0.1 TO3P-3L, TO247-3L, TC = 25 °C, Single pulse, VCE < 5 V 0.01 0.001 1μ 10μ 100μ 1m 10m 100m 1 10 100 Pulse Width (s) Figure 28. Transient Thermal Resistance (TO3P-3L and TO247-3L) xGF65A4H-DSE Rev.1.4 SANKEN ELCTRIC CO., LTD. Oct. 12, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 11 KGF65A4H, MGF65A4H, FGF65A4H 10 Thermal Resistance (°C/W) Diode IGBT 1 0.1 TO3PF-3L, TC = 25 °C, Single pulse, VCE < 5 V 0.01 0.001 1μ 10μ 100μ 1m 10m 100m 1 10 100 Pulse Width (s) Figure 29. Transient Thermal Resistance (TO3PF-3L) xGF65A4H-DSE Rev.1.4 SANKEN ELCTRIC CO., LTD. Oct. 12, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 12 KGF65A4H, MGF65A4H, FGF65A4H Physical Dimensions ● TO247-3L ● TO3P-3L xGF65A4H-DSE Rev.1.4 SANKEN ELCTRIC CO., LTD. Oct. 12, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 13 KGF65A4H, MGF65A4H, FGF65A4H ● TO3PF-3L NOTES: - All dimensions in millimeters - Pin treatment for TO247, TO3P and TO3PF: Pb-free (RoHS compliant) - When soldering the products, make sure to minimize the working time within the following limits: Flow: 260 ± 5 °C / 10 ± 1 s, 2 times Soldering Iron: 380 ± 10 °C / 3.5 ± 0.5 s, 1 time (Soldering should be at a distance of at least 1.5 mm from the body of the products.) - Soldering should be at a distance of at least 1.5 mm from the body of the products. - The recommended screw torque for TO247, TO3P and TO3PF: 0.686 to 0.882 N∙m (7 to 9 kgf∙cm) Marking Diagram TO247-3L TO3P-3L TO3PF-3L (a) Part Number (b) Lot Number KGF65A4H MGF65A4H YMDD XX YMDD XX (a) (b) (a) (b) FGF65A4H YMDD XX Y is the last digit of the year of manufacture (0 to 9). M is the month of the year (1 to 9, O, N or D). DD is the day of the month (01 to 31). XX is the control number. (a) (b) xGF65A4H-DSE Rev.1.4 SANKEN ELCTRIC CO., LTD. Oct. 12, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 14 KGF65A4H, MGF65A4H, FGF65A4H Important Notes ● All data, illustrations, graphs, tables and any other information included in this document as to Sanken’s products listed herein (the “Sanken Products”) are current as of the date this document is issued. All contents in this document are subject to any change without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales representative that the contents set forth in this document reflect the latest revisions before use. ● The Sanken Products are intended for use as components of general purpose electronic equipment or apparatus (such as home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the Sanken Products, please put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to Sanken. When considering use of the Sanken Products for any applications that require higher reliability (such as transportation equipment and its control systems, traffic signal control systems or equipment, disaster/crime alarm systems, various safety devices, etc.), you must contact a Sanken sales representative to discuss the suitability of such use and put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to Sanken, prior to the use of the Sanken Products. The Sanken Products are not intended for use in any applications that require extremely high reliability such as: aerospace equipment; nuclear power control systems; and medical equipment or systems, whose failure or malfunction may result in death or serious injury to people, i.e., medical devices in Class III or a higher class as defined by relevant laws of Japan (collectively, the “Specific Applications”). Sanken assumes no liability or responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, resulting from the use of the Sanken Products in the Specific Applications or in manner not in compliance with the instructions set forth herein. ● In the event of using the Sanken Products by either (i) combining other products or materials therewith or (ii) physically, chemically or otherwise processing or treating the same, you must duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. ● Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the occurrence of any failure or defect in semiconductor products at a certain rate. You must take, at your own responsibility, preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which the Sanken Products are used, upon due consideration of a failure occurrence rate or derating, etc., in order not to cause any human injury or death, fire accident or social harm which may result from any failure or malfunction of the Sanken Products. Please refer to the relevant specification documents and Sanken’s official website in relation to derating. ● No anti-radioactive ray design has been adopted for the Sanken Products. ● No contents in this document can be transcribed or copied without Sanken’s prior written consent. ● The circuit constant, operation examples, circuit examples, pattern layout examples, design examples, recommended examples, all information and evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference of use of the Sanken Products and Sanken assumes no responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, or any possible infringement of any and all property rights including intellectual property rights and any other rights of you, users or any third party, resulting from the foregoing. ● All technical information described in this document (the “Technical Information”) is presented for the sole purpose of reference of use of the Sanken Products and no license, express, implied or otherwise, is granted hereby under any intellectual property rights or any other rights of Sanken. ● Unless otherwise agreed in writing between Sanken and you, Sanken makes no warranty of any kind, whether express or implied, including, without limitation, any warranty (i) as to the quality or performance of the Sanken Products (such as implied warranty of merchantability, or implied warranty of fitness for a particular purpose or special environment), (ii) that any Sanken Product is delivered free of claims of third parties by way of infringement or the like, (iii) that may arise from course of performance, course of dealing or usage of trade, and (iv) as to any information contained in this document (including its accuracy, usefulness, or reliability). ● In the event of using the Sanken Products, you must use the same after carefully examining all applicable environmental laws and regulations that regulate the inclusion or use of any particular controlled substances, including, but not limited to, the EU RoHS Directive, so as to be in strict compliance with such applicable laws and regulations. ● You must not use the Sanken Products or the Technical Information for the purpose of any military applications or use, including but not limited to the development of weapons of mass destruction. In the event of exporting the Sanken Products or the Technical Information, or providing them for non-residents, you must comply with all applicable export control laws and regulations in each country including the U.S. Export Administration Regulations (EAR) and the Foreign Exchange and Foreign Trade Act of Japan, and follow the procedures required by such applicable laws and regulations. ● Sanken assumes no responsibility for any troubles, which may occur during the transportation of the Sanken Products including the falling thereof, out of Sanken’s distribution network. ● Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it is error free and Sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting from any possible errors or omissions in connection with the contents included herein. ● Please refer to the relevant specification documents in relation to particular precautions when using the Sanken Products, and refer to our official website in relation to general instructions and directions for using the Sanken Products. ● All rights and title in and to any specific trademark or tradename belong to Sanken or such original right holder(s). DSGN-CEZ-16002 xGF65A4H-DSE Rev.1.4 SANKEN ELCTRIC CO., LTD. Oct. 12, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 15