ON NVTR4503NT1G Power mosfet Datasheet

NTR4503N, NVTR4503N
Power MOSFET
30 V, 2.5 A, Single N−Channel, SOT−23
Features
•
•
•
•
•
Leading Planar Technology for Low Gate Charge / Fast Switching
4.5 V Rated for Low Voltage Gate Drive
SOT−23 Surface Mount for Small Footprint (3 x 3 mm)
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(on) TYP
ID MAX
85 mW @ 10 V
30 V
2.5 A
105 mW @ 4.5 V
Applications
• DC−DC Conversion
• Load/Power Switch for Portables
• Load/Power Switch for Computing
N−Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
2.0
A
Continuous Drain
Current (Note 1)
G
S
Steady
State
TA = 25°C
TA = 85°C
1.5
t ≤ 10 s
TA = 25°C
2.5
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
0.73
W
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°C
ID
1.5
A
2
SOT−23
CASE 318
STYLE 21
Power Dissipation
(Note 2)
TA = 85°C
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Peak Source Current
(Diode Forward)
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
1
TA = 25°C
Pulsed Drain Current
3
tp = 10 ms
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
1.1
PD
0.42
W
IDM
10
A
TJ,
Tstg
−55 to
150
°C
IS
2.0
A
ISM
4.0
A
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
170
°C/W
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
100
Junction−to−Ambient − Steady State (Note 2)
RqJA
300
TR3
M
G
TR3 MG
G
1
Gate
2
Source
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTR4503NT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
NVTR4503NT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Surface−mounted on FR4 board using 1 in sq pad size.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2003
October, 2016 − Rev. 8
1
Publication Order Number:
NTR4503N/D
NTR4503N, NVTR4503N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
36
IDSS
VGS = 0 V, VDS = 24 V
1.0
VGS = 0 V, VDS = 24 V, TJ = 125°C
10
IGSS
VDS = 0 V, VGS = "20 V
"100
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.75
3.0
V
Drain−to−Source On−Resistance
RDS(on)
VGS = 10 V, ID = 2.5 A
85
110
mW
VGS = 4.5 V, ID = 2.0 A
105
140
VDS = 4.5 V, ID = 2.5 A
5.3
S
135
pF
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
V
mA
nA
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
1.0
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Input Capacitance
Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = 15 V
52
15
VGS = 0 V, f = 1.0 MHz,
VDS = 24 V
130
250
42
75
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
13
25
Total Gate Charge
QG(TOT)
3.6
7.0
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
0.7
Total Gate Charge
QG(TOT)
1.9
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = 10 V, VDS = 15 V,
ID = 2.5 A
VGS = 4.5 V, VDS = 24 V,
ID = 2.5 A
pF
nC
0.3
0.6
nC
0.3
0.6
0.9
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
5.8
12
5.8
10
14
25
tf
1.6
5.0
td(on)
4.8
tr
td(off)
tr
td(off)
VGS = 10 V, VDD = 15 V,
ID = 1 A, RG = 6 W
VGS = 10 V, VDD = 24 V,
ID = 2.5 A, RG = 2.5 W
tf
ns
ns
6.7
13.6
1.8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = 2.0 A
0.85
1.2
V
Reverse Recovery Time
tRR
9.2
ns
Reverse Recovery Charge
QRR
VGS = 0 V, IS = 2.0 A,
dIS/dt = 100 A/ms
4.0
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTR4503N, NVTR4503N
TYPICAL PERFORMANCE CURVES
10 V
6V
5V
4.5 V
4.2 V
8
4V
VDS ≥ 10 V
3.8 V
TJ = 25°C
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
10
3.6 V
6
3.4 V
3.2 V
4
3V
2
2.8 V
8
4
100°C
25°C
2.6 V
0
1
2
3
4
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
2
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
0.3
ID = 2.5 A
TJ = 25°C
0.25
0.2
0.15
0.1
0.05
0
4
6
3
5
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
10
TJ = 25°C
0.11
VGS = 4.5 V
0.10
0.09
0.08
VGS = 10 V
0.07
2
3
6
5
4
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1000
1.8
VGS = 0 V
ID = 2.5 A
VGS = 10 V
IDSS, LEAKAGE (nA)
1.6
6
0.12
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = −55°C
0
1.4
1.2
1.0
TJ = 150°C
100
10
TJ = 100°C
0.8
0.6
−50
1
−25
0
25
50
75
100
125
150
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NTR4503N, NVTR4503N
VGS = 0 V
VDS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
Ciss
VDS
QG
10
200
Crss
100
Coss
0
10
15
15
5
VGS
0
VDS
5
10
15
20
30
25
VGS
5
QGS
5
QGD
ID = 2.5 A
TJ = 25°C
0
0
0
1
2
3
QG, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
100
3
IS, SOURCE CURRENT (AMPS)
VDD = 24 V
ID = 2.5 A
VGS = 10 V
t, TIME (ns)
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
300
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES
td(off)
tf
10
td(on)
tr
10
2
1
0
0.3
1
1
VGS = 0 V
TJ = 25°C
100
0.4
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (OHMS)
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
1
NTR4503N, NVTR4503N
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTR4503N/D