G3SBA20, G3SBA60, G3SBA80 www.vishay.com Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • UL recognition file number E54214 • Ideal for printed circuit boards • High surge current capability • High case dielectric strength of 1500 VRMS ~ ~ • Solder dip 275 °C max. 10 s, per JESD 22-B106 + - ~ ~ + • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Case Style GBU Case Style GBU TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for monitor, TV, printer, switching mode power supply, adapter, audio equipment, and home appliances applications. PRIMARY CHARACTERISTICS Package GBU IF(AV) 4.0 A VRRM 200 V, 600 V, 800 V IFSM 80 A MECHANICAL DATA Case: GBU Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade IR 5 μA VF at IF = 2.0 V 1.0 V TJ max. 150 °C Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Diode variations In-Line Polarity: As marked on body per Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL G3SBA20 G3SBA60 G3SBA80 Maximum repetitive peak reverse voltage VRRM 200 600 800 V Maximum RMS voltage VRWM 140 420 560 V VDC 200 600 800 V Maximum DC blocking voltage Maximum average forward rectified output current at TC = 100 °C (1) TA = 25 °C (2) Peak forward surge current single sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range 4.0 IF(AV) A 2.3 IFSM UNIT 80 A I2t 27 A2s TJ, TSTG - 55 to + 150 °C Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode Maximum DC reverse current at rated DC blocking voltage per diode Revision: 27-Sep-13 TEST CONDITIONS 2.0 A TJ = 25 °C TJ = 125 °C SYMBOL VF IR G3SBA20 G3SBA60 1.00 5.0 400 G3SBA80 UNIT V μA Document Number: 88606 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 G3SBA20, G3SBA60, G3SBA80 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance G3SBA20 G3SBA60 RJA (2) 26 RJC (1) 5.0 G3SBA80 UNIT °C/W Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE G3SBA60-E3/45 3.404 45 20 Tube G3SBA60-E3/51 3.404 51 250 Paper tray RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Heatsink Mounting, TC Instantaneous Forward Current (A) Average Forward Output Current (A) 4 3 2 P.C.B. Mounting, TA 1 25 50 75 100 125 150 0.1 0.8 1.2 1.6 2.0 2.4 Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Derating Curve Output Rectified Current Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 100 100 Instantaneous Reverse Current (µA) Peak Forward Surge Current (A) 1 0.01 0.4 0 0 10 80 60 40 20 1.0 Cycle TA = 125 °C 10 1 0.1 TA = 25 °C 0.01 0 1 10 100 Number of Cycles at 60 Hz Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 27-Sep-13 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Document Number: 88606 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 G3SBA20, G3SBA60, G3SBA80 www.vishay.com Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 100 10 1 10 1 0.1 0.01 1 0.1 10 100 0.1 1 10 100 Reverse Voltage (V) t - Heating Time (s) Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style GBU 0.020 R (TYP.) 0.310 (7.9) 0.290 (7.4) 0.085 (2.16) 0.065 (1.65) 0.140 (3.56) 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.125 (3.2) x 45° Chamfer 0.160 (4.1) 0.140 (3.5) 0.075 (1.9) R . 9° TYP. 0.740 (18.8) 0.720 (18.3) 0.080 (2.03) 0.060 (1.52) 5° TYP. 0.100 (2.54) 0.085 (2.16) 0.080 (2.03) 0.065(1.65) 0.043 (1.10) 0.035 (0.90) 0.190 (4.83) 0.210 (5.33) 0.710 (18.0) 0.690 (17.5) 0.085 (2.16) 0.075 (1.90) 0.022 (0.56) 0.018 (0.46) Polarity shown on front side of case, positive lead by beveled corner Revision: 27-Sep-13 Document Number: 88606 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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